KR102169060B1 - 193nm 레이저 및 검사 시스템 - Google Patents

193nm 레이저 및 검사 시스템 Download PDF

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KR102169060B1
KR102169060B1 KR1020157022954A KR20157022954A KR102169060B1 KR 102169060 B1 KR102169060 B1 KR 102169060B1 KR 1020157022954 A KR1020157022954 A KR 1020157022954A KR 20157022954 A KR20157022954 A KR 20157022954A KR 102169060 B1 KR102169060 B1 KR 102169060B1
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laser
frequency
wavelength
harmonic
fundamental wave
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KR20150109472A (ko
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영호 알렉스 추앙
제이 조셉 암스트롱
블라디미르 드리빈스키
유준 뎅
존 피엘덴
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케이엘에이 코포레이션
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/005—Optical devices external to the laser cavity, specially adapted for lasers, e.g. for homogenisation of the beam or for manipulating laser pulses, e.g. pulse shaping
    • H01S3/0092—Nonlinear frequency conversion, e.g. second harmonic generation [SHG] or sum- or difference-frequency generation outside the laser cavity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/106—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity
    • H01S3/108—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity using non-linear optical devices, e.g. exhibiting Brillouin or Raman scattering
    • H01S3/1083—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity using non-linear optical devices, e.g. exhibiting Brillouin or Raman scattering using parametric generation
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956—Inspecting patterns on the surface of objects
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/35—Non-linear optics
    • G02F1/353—Frequency conversion, i.e. wherein a light beam is generated with frequency components different from those of the incident light beams
    • G02F1/3534—Three-wave interaction, e.g. sum-difference frequency generation
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/35—Non-linear optics
    • G02F1/353—Frequency conversion, i.e. wherein a light beam is generated with frequency components different from those of the incident light beams
    • G02F1/3536—Four-wave interaction
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/35—Non-linear optics
    • G02F1/39—Non-linear optics for parametric generation or amplification of light, infrared or ultraviolet waves
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/06—Construction or shape of active medium
    • H01S3/0602—Crystal lasers or glass lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/06—Construction or shape of active medium
    • H01S3/063—Waveguide lasers, i.e. whereby the dimensions of the waveguide are of the order of the light wavelength
    • H01S3/067—Fibre lasers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956—Inspecting patterns on the surface of objects
    • G01N2021/95676—Masks, reticles, shadow masks
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/35—Non-linear optics
    • G02F1/3501—Constructional details or arrangements of non-linear optical devices, e.g. shape of non-linear crystals
    • G02F1/3507—Arrangements comprising two or more nonlinear optical devices
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
    • G02F2201/16—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 series; tandem
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/005—Optical devices external to the laser cavity, specially adapted for lasers, e.g. for homogenisation of the beam or for manipulating laser pulses, e.g. pulse shaping
    • H01S3/0078—Frequency filtering

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Optics & Photonics (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Pathology (AREA)
  • Immunology (AREA)
  • General Health & Medical Sciences (AREA)
  • Biochemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
  • Lasers (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
KR1020157022954A 2013-01-24 2014-01-24 193nm 레이저 및 검사 시스템 Active KR102169060B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201361756209P 2013-01-24 2013-01-24
US61/756,209 2013-01-24
US14/158,615 US8929406B2 (en) 2013-01-24 2014-01-17 193NM laser and inspection system
US14/158,615 2014-01-17
PCT/US2014/012902 WO2014116922A1 (en) 2013-01-24 2014-01-24 193nm laser and inspection system

Publications (2)

Publication Number Publication Date
KR20150109472A KR20150109472A (ko) 2015-10-01
KR102169060B1 true KR102169060B1 (ko) 2020-10-22

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US (2) US8929406B2 (enExample)
EP (1) EP2949015B1 (enExample)
JP (2) JP6479683B2 (enExample)
KR (1) KR102169060B1 (enExample)
CN (1) CN105191026B (enExample)
IL (1) IL240009B (enExample)
TW (1) TWI590549B (enExample)
WO (1) WO2014116922A1 (enExample)

Families Citing this family (59)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8164818B2 (en) 2010-11-08 2012-04-24 Soladigm, Inc. Electrochromic window fabrication methods
US9793673B2 (en) 2011-06-13 2017-10-17 Kla-Tencor Corporation Semiconductor inspection and metrology system using laser pulse multiplier
US8873596B2 (en) 2011-07-22 2014-10-28 Kla-Tencor Corporation Laser with high quality, stable output beam, and long life high conversion efficiency non-linear crystal
US9885934B2 (en) * 2011-09-14 2018-02-06 View, Inc. Portable defect mitigators for electrochromic windows
US9507232B2 (en) 2011-09-14 2016-11-29 View, Inc. Portable defect mitigator for electrochromic windows
US10197501B2 (en) 2011-12-12 2019-02-05 Kla-Tencor Corporation Electron-bombarded charge-coupled device and inspection systems using EBCCD detectors
US9341912B2 (en) 2012-03-13 2016-05-17 View, Inc. Multi-zone EC windows
ES2683188T3 (es) 2012-03-13 2018-09-25 View, Inc. Mitigación estenopeica para dispositivos ópticos
US9496425B2 (en) 2012-04-10 2016-11-15 Kla-Tencor Corporation Back-illuminated sensor with boron layer
HK1208403A1 (en) 2012-05-18 2016-03-04 View, Inc. Circumscribing defects in optical devices
US9601299B2 (en) 2012-08-03 2017-03-21 Kla-Tencor Corporation Photocathode including silicon substrate with boron layer
US9042006B2 (en) 2012-09-11 2015-05-26 Kla-Tencor Corporation Solid state illumination source and inspection system
US9151940B2 (en) 2012-12-05 2015-10-06 Kla-Tencor Corporation Semiconductor inspection and metrology system using laser pulse multiplier
US9426400B2 (en) 2012-12-10 2016-08-23 Kla-Tencor Corporation Method and apparatus for high speed acquisition of moving images using pulsed illumination
US8929406B2 (en) * 2013-01-24 2015-01-06 Kla-Tencor Corporation 193NM laser and inspection system
US9529182B2 (en) 2013-02-13 2016-12-27 KLA—Tencor Corporation 193nm laser and inspection system
US9608399B2 (en) 2013-03-18 2017-03-28 Kla-Tencor Corporation 193 nm laser and an inspection system using a 193 nm laser
US9478402B2 (en) 2013-04-01 2016-10-25 Kla-Tencor Corporation Photomultiplier tube, image sensor, and an inspection system using a PMT or image sensor
US9347890B2 (en) 2013-12-19 2016-05-24 Kla-Tencor Corporation Low-noise sensor and an inspection system using a low-noise sensor
US9748294B2 (en) 2014-01-10 2017-08-29 Hamamatsu Photonics K.K. Anti-reflection layer for back-illuminated sensor
US9410901B2 (en) 2014-03-17 2016-08-09 Kla-Tencor Corporation Image sensor, an inspection system and a method of inspecting an article
US9804101B2 (en) 2014-03-20 2017-10-31 Kla-Tencor Corporation System and method for reducing the bandwidth of a laser and an inspection system and method using a laser
US10228607B2 (en) 2014-05-22 2019-03-12 Lumentum Operations Llc Second harmonic generation
US9568803B2 (en) * 2014-05-22 2017-02-14 Lumentum Operations Llc Cascaded optical harmonic generation
US9525265B2 (en) 2014-06-20 2016-12-20 Kla-Tencor Corporation Laser repetition rate multiplier and flat-top beam profile generators using mirrors and/or prisms
US9767986B2 (en) 2014-08-29 2017-09-19 Kla-Tencor Corporation Scanning electron microscope and methods of inspecting and reviewing samples
US9419407B2 (en) 2014-09-25 2016-08-16 Kla-Tencor Corporation Laser assembly and inspection system using monolithic bandwidth narrowing apparatus
US9748729B2 (en) * 2014-10-03 2017-08-29 Kla-Tencor Corporation 183NM laser and inspection system
CN104759753B (zh) * 2015-03-30 2016-08-31 江苏大学 多系统自动化协调工作提高激光诱导空化强化的方法
US9860466B2 (en) 2015-05-14 2018-01-02 Kla-Tencor Corporation Sensor with electrically controllable aperture for inspection and metrology systems
US10748730B2 (en) 2015-05-21 2020-08-18 Kla-Tencor Corporation Photocathode including field emitter array on a silicon substrate with boron layer
US10462391B2 (en) 2015-08-14 2019-10-29 Kla-Tencor Corporation Dark-field inspection using a low-noise sensor
US10313622B2 (en) 2016-04-06 2019-06-04 Kla-Tencor Corporation Dual-column-parallel CCD sensor and inspection systems using a sensor
US10778925B2 (en) 2016-04-06 2020-09-15 Kla-Tencor Corporation Multiple column per channel CCD sensor architecture for inspection and metrology
US10048596B2 (en) 2016-05-04 2018-08-14 Asml Netherlands B.V. Method and apparatus for generating illuminating radiation
JP6286089B2 (ja) * 2016-06-08 2018-02-28 ルーメンタム オペレーションズ エルエルシーＬｕｍｅｎｔｕｍ Ｏｐｅｒａｔｉｏｎｓ ＬＬＣ カスケード光高調波発生
JP6306659B1 (ja) * 2016-10-19 2018-04-04 ファナック株式会社 ビーム分配器
US10175555B2 (en) 2017-01-03 2019-01-08 KLA—Tencor Corporation 183 nm CW laser and inspection system
US10756505B2 (en) 2017-09-21 2020-08-25 Qioptiq Photonics Gmbh & Co. Kg Tunable light source with broadband output
US10409139B2 (en) 2017-09-21 2019-09-10 Qioptiq Photonics Gmbh & Co. Kg Light source with multi-longitudinal mode continuous wave output based on multi-mode resonant OPO technology
CN107611759A (zh) * 2017-10-13 2018-01-19 中国科学院上海应用物理研究所 一种激光锁相装置及方法
US11114489B2 (en) 2018-06-18 2021-09-07 Kla-Tencor Corporation Back-illuminated sensor and a method of manufacturing a sensor
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US11114491B2 (en) 2018-12-12 2021-09-07 Kla Corporation Back-illuminated sensor and a method of manufacturing a sensor
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US11378863B1 (en) * 2021-04-15 2022-07-05 Coherent Kaiserslautern GmbH Nonlinear frequency conversion with variable average power and stable heat load
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US20240255829A1 (en) * 2023-01-31 2024-08-01 Cornell University Third-harmonic frequency generator and generation method
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Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001274081A (ja) * 1999-11-17 2001-10-05 Applied Materials Inc スペックルを減少する物体検査用の装置及び方法
JP2007086108A (ja) * 2005-09-20 2007-04-05 Megaopto Co Ltd 深紫外レーザー光の発生方法および深紫外レーザー装置
JP2008532044A (ja) * 2005-03-02 2008-08-14 ケーエルエー−テンカー テクノロジィース コーポレイション 拡張型同時多スポット撮像検査
WO2011158927A1 (ja) * 2010-06-17 2011-12-22 株式会社ニコン 紫外レーザ装置
JP2012220388A (ja) * 2011-04-12 2012-11-12 Lasertec Corp 検査装置及び欠陥検査方法
WO2012173943A2 (en) * 2011-06-13 2012-12-20 Kla-Tencor Corporation Semiconductor inspection and metrology system using laser pulse multiplier

Family Cites Families (134)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4178561A (en) 1978-10-02 1979-12-11 Hughes Aircraft Company Scanning arrangements for optical frequency converters
US5144630A (en) 1991-07-29 1992-09-01 Jtt International, Inc. Multiwavelength solid state laser using frequency conversion techniques
DE69208413T2 (de) * 1991-08-22 1996-11-14 Kla Instr Corp Gerät zur automatischen Prüfung von Photomaske
EP0532927B1 (en) 1991-08-22 1996-02-21 Kla Instruments Corporation Automated photomask inspection apparatus
US5563702A (en) 1991-08-22 1996-10-08 Kla Instruments Corporation Automated photomask inspection apparatus and method
JP3269231B2 (ja) * 1993-12-15 2002-03-25 株式会社ニコン 露光方法、光源装置、及び露光装置
US6271916B1 (en) 1994-03-24 2001-08-07 Kla-Tencor Corporation Process and assembly for non-destructive surface inspections
US6512631B2 (en) 1996-07-22 2003-01-28 Kla-Tencor Corporation Broad-band deep ultraviolet/vacuum ultraviolet catadioptric imaging system
IL118872A (en) * 1996-07-16 2000-06-01 Orbot Instr Ltd Optical inspection method and apparatus
US5999310A (en) 1996-07-22 1999-12-07 Shafer; David Ross Ultra-broadband UV microscope imaging system with wide range zoom capability
US5742626A (en) 1996-08-14 1998-04-21 Aculight Corporation Ultraviolet solid state laser, method of using same and laser surgery apparatus
US5760899A (en) 1996-09-04 1998-06-02 Erim International, Inc. High-sensitivity multispectral sensor
JPH1097053A (ja) * 1996-09-20 1998-04-14 Toshiba Corp パターン欠陥検査装置
US6212310B1 (en) 1996-10-22 2001-04-03 Sdl, Inc. High power fiber gain media system achieved through power scaling via multiplexing
US20050041702A1 (en) * 1997-03-21 2005-02-24 Imra America, Inc. High energy optical fiber amplifier for picosecond-nanosecond pulses for advanced material processing applications
US6608676B1 (en) 1997-08-01 2003-08-19 Kla-Tencor Corporation System for detecting anomalies and/or features of a surface
US5825562A (en) 1997-08-18 1998-10-20 Novatec Corporation Method of continuous motion for prolong usage of optical elements under the irradiation of intensive laser beams
KR20000069013A (ko) * 1997-09-17 2000-11-25 다나카 아키히로 광원장치
US6201601B1 (en) 1997-09-19 2001-03-13 Kla-Tencor Corporation Sample inspection system
JPH11121854A (ja) * 1997-10-16 1999-04-30 Ushio Sogo Gijutsu Kenkyusho:Kk 光源装置
KR100819239B1 (ko) 1998-03-11 2008-04-03 가부시키가이샤 니콘 자외 레이저 장치, 레이저 장치, 노광 장치와 노광 방법, 디바이스 제조 방법, 자외광 조사 장치, 물체 패턴 검출 장치, 자외광 조사 방법 및 물체 패턴 검출 방법
JP3997450B2 (ja) 1998-03-13 2007-10-24 ソニー株式会社 波長変換装置
US6373869B1 (en) 1998-07-30 2002-04-16 Actinix System and method for generating coherent radiation at ultraviolet wavelengths
JP2000171843A (ja) * 1998-12-07 2000-06-23 Ushio Sogo Gijutsu Kenkyusho:Kk 光源装置
JP2000223408A (ja) * 1999-02-03 2000-08-11 Hitachi Ltd 半導体製造装置および半導体装置の製造方法
EP1194804B1 (en) 1999-06-11 2003-07-30 Daniel Dr. Kopf LASER generating system
US6888855B1 (en) * 1999-06-11 2005-05-03 Daniel Kopf Optical system for lasers
US6498801B1 (en) 1999-08-05 2002-12-24 Alexander E. Dudelzak Solid state laser for microlithography
JP4531163B2 (ja) * 1999-08-06 2010-08-25 浜松ホトニクス株式会社 光パラメトリック発振器
WO2001020397A1 (en) 1999-09-10 2001-03-22 Nikon Corporation Laser device and exposure method
WO2001020733A1 (en) 1999-09-10 2001-03-22 Nikon Corporation Light source and wavelength stabilization control method, exposure apparatus and exposure method, method for producing exposure apparatus, and device manufacturing method and device
US7838794B2 (en) 1999-12-28 2010-11-23 Gsi Group Corporation Laser-based method and system for removing one or more target link structures
US6549647B1 (en) 2000-01-07 2003-04-15 Cyberoptics Corporation Inspection system with vibration resistant video capture
US6879390B1 (en) 2000-08-10 2005-04-12 Kla-Tencor Technologies Corporation Multiple beam inspection apparatus and method
US7184616B2 (en) 2000-11-20 2007-02-27 Aculight Corporation Method and apparatus for fiber Bragg grating production
US8208505B2 (en) 2001-01-30 2012-06-26 Board Of Trustees Of Michigan State University Laser system employing harmonic generation
US6791099B2 (en) 2001-02-14 2004-09-14 Applied Materials, Inc. Laser scanning wafer inspection using nonlinear optical phenomena
JP3939928B2 (ja) 2001-02-28 2007-07-04 サイバーレーザー株式会社 波長変換装置
US6667828B2 (en) * 2001-07-13 2003-12-23 Zygo Corporation Apparatus and method using a nonlinear optical crystal
US20030161374A1 (en) 2001-11-21 2003-08-28 Lambda Physik Ag High-resolution confocal Fabry-Perot interferometer for absolute spectral parameter detection of excimer laser used in lithography applications
US6816520B1 (en) 2001-11-30 2004-11-09 Positive Light Solid state system and method for generating ultraviolet light
US7088443B2 (en) * 2002-02-11 2006-08-08 Kla-Tencor Technologies Corporation System for detecting anomalies and/or features of a surface
US6859335B1 (en) 2002-11-20 2005-02-22 Ming Lai Method of programmed displacement for prolong usage of optical elements under the irradiation of intensive laser beams
US7957066B2 (en) 2003-02-21 2011-06-07 Kla-Tencor Corporation Split field inspection system using small catadioptric objectives
US7365834B2 (en) * 2003-06-24 2008-04-29 Kla-Tencor Technologies Corporation Optical system for detecting anomalies and/or features of surfaces
EP1666520B1 (en) 2003-09-11 2013-11-13 Nikon Corporation A macromolecular crystral working apparatus ; A macromolecular crystal evaluating device with such apparatus
US7463657B2 (en) 2003-10-09 2008-12-09 Coherent, Inc. Intracavity frequency-tripled CW laser
US7813406B1 (en) 2003-10-15 2010-10-12 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Temporal laser pulse manipulation using multiple optical ring-cavities
JP2005156516A (ja) 2003-11-05 2005-06-16 Hitachi Ltd パターン欠陥検査方法及びその装置
US20050157382A1 (en) 2004-01-07 2005-07-21 Kafka James D. Industrial directly diode-pumped ultrafast amplifier system
US7313155B1 (en) 2004-02-12 2007-12-25 Liyue Mu High power Q-switched laser for soft tissue ablation
EP1724633B1 (en) 2004-03-08 2017-01-04 Nikon Corporation Laser light source device, exposure apparatus using this laser light source device, and mask examining device
US20050254065A1 (en) 2004-05-12 2005-11-17 Stokowski Stanley E Method and apparatus for detecting surface characteristics on a mask blank
US7349079B2 (en) 2004-05-14 2008-03-25 Kla-Tencor Technologies Corp. Methods for measurement or analysis of a nitrogen concentration of a specimen
JP4636020B2 (ja) 2004-05-26 2011-02-23 株式会社ニコン 波長変換光学系、レーザ光源、露光装置、マスク検査装置、及び高分子結晶の加工装置
JP2006060162A (ja) 2004-08-24 2006-03-02 Nikon Corp レーザ光源装置の励起光の制御方法及びレーザ光源装置
US7627007B1 (en) 2004-08-25 2009-12-01 Kla-Tencor Technologies Corporation Non-critical phase matching in CLBO to generate sub-213nm wavelengths
US7609309B2 (en) 2004-11-18 2009-10-27 Kla-Tencor Technologies Corporation Continuous clocking of TDI sensors
US7952633B2 (en) 2004-11-18 2011-05-31 Kla-Tencor Technologies Corporation Apparatus for continuous clocking of TDI sensors
JP2006220644A (ja) * 2005-01-14 2006-08-24 Hitachi High-Technologies Corp パターン検査方法及びその装置
JP2006250845A (ja) 2005-03-14 2006-09-21 Topcon Corp パターン欠陥検査方法とその装置
US7593440B2 (en) 2005-03-29 2009-09-22 Coherent, Inc. MOPA laser apparatus with two master oscillators for generating ultraviolet radiation
DE602006004913D1 (de) 2005-04-28 2009-03-12 Semiconductor Energy Lab Verfahren und Vorrichtung zur Herstellung von Halbleitern mittels Laserstrahlung
US7345825B2 (en) 2005-06-30 2008-03-18 Kla-Tencor Technologies Corporation Beam delivery system for laser dark-field illumination in a catadioptric optical system
JP4640029B2 (ja) 2005-08-08 2011-03-02 株式会社ニコン 波長変換光学系、レーザ光源、露光装置、被検物検査装置、及び高分子結晶の加工装置
WO2007032217A1 (ja) 2005-09-16 2007-03-22 Matsushita Electric Industrial Co., Ltd. コンポジット材料、及びこれを用いた光学部品
US7715459B2 (en) 2005-11-01 2010-05-11 Cymer, Inc. Laser system
US20090296755A1 (en) 2005-11-01 2009-12-03 Cymer, Inc. Laser system
EP1952493A4 (en) 2005-11-01 2017-05-10 Cymer, LLC Laser system
US7920616B2 (en) 2005-11-01 2011-04-05 Cymer, Inc. Laser system
US7643529B2 (en) 2005-11-01 2010-01-05 Cymer, Inc. Laser system
JP2007133102A (ja) 2005-11-09 2007-05-31 Canon Inc 反射防止膜を有する光学素子及びそれを有する露光装置
US7471705B2 (en) 2005-11-09 2008-12-30 Lockheed Martin Corporation Ultraviolet laser system and method having wavelength in the 200-nm range
US7519253B2 (en) 2005-11-18 2009-04-14 Omni Sciences, Inc. Broadband or mid-infrared fiber light sources
US7528943B2 (en) 2005-12-27 2009-05-05 Kla-Tencor Technologies Corporation Method and apparatus for simultaneous high-speed acquisition of multiple images
JP2007206452A (ja) 2006-02-02 2007-08-16 Lasertec Corp 深紫外光源及び、その深紫外光源を用いたマスク検査装置及び露光装置
EP2013951A4 (en) 2006-04-28 2011-08-03 Corning Inc PULSED RAMAN LASER SYSTEMS IN ULTRAVIOLET AND VISIBLE LIGHT
US7593437B2 (en) 2006-05-15 2009-09-22 Coherent, Inc. MOPA laser apparatus with two master oscillators for generating ultraviolet radiation
US20070263680A1 (en) 2006-05-15 2007-11-15 Andrei Starodoumov MOPA laser apparatus with two master oscillators for generating ultraviolet radiation
WO2007142988A2 (en) 2006-06-02 2007-12-13 Corning Incorporated Uv and visible laser systems
US7457330B2 (en) 2006-06-15 2008-11-25 Pavilion Integration Corporation Low speckle noise monolithic microchip RGB lasers
US7970201B2 (en) 2006-07-31 2011-06-28 Applied Materials Israel, Ltd. Method and system for defect detection
DE102007004235B3 (de) 2006-12-21 2008-01-03 Coherent Gmbh Verfahren zur Frequenzkonversion eines Lichtstrahls mittels eines CLBO-Kristalls
WO2008088838A1 (en) 2007-01-17 2008-07-24 Crystal Is, Inc. Defect reduction in seeded aluminum nitride crystal growth
US9771666B2 (en) 2007-01-17 2017-09-26 Crystal Is, Inc. Defect reduction in seeded aluminum nitride crystal growth
JP4224863B2 (ja) 2007-02-02 2009-02-18 レーザーテック株式会社 検査装置及び検査方法、並びにパターン基板の製造方法
JP2008209664A (ja) 2007-02-27 2008-09-11 Advanced Mask Inspection Technology Kk パターン検査装置
JP2008261790A (ja) 2007-04-13 2008-10-30 Hitachi High-Technologies Corp 欠陥検査装置
US8755417B1 (en) 2007-04-16 2014-06-17 Kla-Tencor Corporation Coherent light generation below about two-hundred nanometers
US20110073982A1 (en) 2007-05-25 2011-03-31 Armstrong J Joseph Inspection system using back side illuminated linear sensor
US7999342B2 (en) 2007-09-24 2011-08-16 Taiwan Semiconductor Manufacturing Company, Ltd Image sensor element for backside-illuminated sensor
JP4634427B2 (ja) 2007-09-27 2011-02-16 株式会社東芝 照明装置及びパターン検査装置
US7525649B1 (en) 2007-10-19 2009-04-28 Kla-Tencor Technologies Corporation Surface inspection system using laser line illumination with two dimensional imaging
JP2009145791A (ja) 2007-12-18 2009-07-02 Lasertec Corp 波長変換装置、検査装置及び波長変換方法
US8298335B2 (en) 2007-12-18 2012-10-30 Kla-Tencor Technologies Corporation Enclosure for controlling the environment of optical crystals
US7885298B2 (en) 2008-01-16 2011-02-08 Deep Photonics Corporation Method and apparatus for producing arbitrary pulsetrains from a harmonic fiber laser
JP2010054547A (ja) 2008-08-26 2010-03-11 Lasertec Corp 紫外レーザ装置
WO2010037106A2 (en) 2008-09-29 2010-04-01 Kla-Tencor Corporation Illumination subsystems of a metrology system, metrology systems, and methods for illuminating a specimen for metrology measurements
US9080991B2 (en) * 2008-09-29 2015-07-14 Kla-Tencor Corp. Illuminating a specimen for metrology or inspection
FR2938935B1 (fr) 2008-11-21 2011-05-06 Eolite Systems Dispositif d'allongement de la duree de vie d'un systeme optique non lineaire soumis au rayonnement d'un faisceau laser intense et source optique non lineaire comprenant ce dispositif
US8146498B2 (en) 2008-12-03 2012-04-03 Eastman Kodak Company Printing plate registration
US8624971B2 (en) 2009-01-23 2014-01-07 Kla-Tencor Corporation TDI sensor modules with localized driving and signal processing circuitry for high speed inspection
JP5237874B2 (ja) 2009-04-24 2013-07-17 株式会社日立ハイテクノロジーズ 欠陥検査方法および欠陥検査装置
JP4565207B1 (ja) 2009-04-28 2010-10-20 レーザーテック株式会社 波長変換装置及び波長変換方法並びに半導体装置の製造方法
US20100301437A1 (en) 2009-06-01 2010-12-02 Kla-Tencor Corporation Anti-Reflective Coating For Sensors Suitable For High Throughput Inspection Systems
JP2011023532A (ja) 2009-07-15 2011-02-03 Nikon Corp 光増幅器、レーザ装置及び光源装置
WO2011046780A1 (en) 2009-10-13 2011-04-21 Nanda Nathan Pulsed high-power laser apparatus and methods
CN101702490B (zh) 2009-10-29 2011-02-09 长春理工大学 一种采用阱中量子点(dwell)的中红外锑化物激光器结构
US20110134944A1 (en) 2009-12-08 2011-06-09 The Arizona Board Of Regents On Behalf Of The University Of Arizona Efficient pulse laser light generation and devices using the same
JP2011128330A (ja) 2009-12-17 2011-06-30 Nikon Corp レーザ装置
JP4590578B1 (ja) 2010-04-01 2010-12-01 レーザーテック株式会社 光源装置、マスク検査装置、及びコヒーレント光発生方法
JP5914329B2 (ja) 2010-05-24 2016-05-11 ギガフォトン株式会社 固体レーザ装置およびレーザシステム
US8482846B2 (en) 2010-08-09 2013-07-09 Coherent Gmbh Advanced shifting algorithm for prolonging the life of an optically nonlinear crystal
US8824514B2 (en) 2010-11-09 2014-09-02 Kla-Tencor Corporation Measuring crystal site lifetime in a non-linear optical crystal
US8711470B2 (en) 2010-11-14 2014-04-29 Kla-Tencor Corporation High damage threshold frequency conversion system
WO2012154468A2 (en) 2011-05-06 2012-11-15 Kla-Tencor Corporation Deep ultra-violet light sources for wafer and reticle inspection systems
US9279774B2 (en) 2011-07-12 2016-03-08 Kla-Tencor Corp. Wafer inspection
US8873596B2 (en) * 2011-07-22 2014-10-28 Kla-Tencor Corporation Laser with high quality, stable output beam, and long life high conversion efficiency non-linear crystal
US8748828B2 (en) 2011-09-21 2014-06-10 Kla-Tencor Corporation Interposer based imaging sensor for high-speed image acquisition and inspection systems
US20130077086A1 (en) 2011-09-23 2013-03-28 Kla-Tencor Corporation Solid-State Laser And Inspection System Using 193nm Laser
US9250178B2 (en) 2011-10-07 2016-02-02 Kla-Tencor Corporation Passivation of nonlinear optical crystals
US8754972B2 (en) 2012-02-01 2014-06-17 Kla-Tencor Corporation Integrated multi-channel analog front end and digitizer for high speed imaging applications
US9496425B2 (en) 2012-04-10 2016-11-15 Kla-Tencor Corporation Back-illuminated sensor with boron layer
US20130313440A1 (en) * 2012-05-22 2013-11-28 Kla-Tencor Corporation Solid-State Laser And Inspection System Using 193nm Laser
US9042006B2 (en) 2012-09-11 2015-05-26 Kla-Tencor Corporation Solid state illumination source and inspection system
NL2011568A (en) 2012-10-31 2014-05-06 Asml Netherlands Bv Sensor and lithographic apparatus.
US9151940B2 (en) 2012-12-05 2015-10-06 Kla-Tencor Corporation Semiconductor inspection and metrology system using laser pulse multiplier
US9426400B2 (en) 2012-12-10 2016-08-23 Kla-Tencor Corporation Method and apparatus for high speed acquisition of moving images using pulsed illumination
US8929406B2 (en) * 2013-01-24 2015-01-06 Kla-Tencor Corporation 193NM laser and inspection system
US9529182B2 (en) 2013-02-13 2016-12-27 KLA—Tencor Corporation 193nm laser and inspection system
US9478402B2 (en) 2013-04-01 2016-10-25 Kla-Tencor Corporation Photomultiplier tube, image sensor, and an inspection system using a PMT or image sensor
US11180866B2 (en) 2013-04-10 2021-11-23 Kla Corporation Passivation of nonlinear optical crystals
US9347890B2 (en) 2013-12-19 2016-05-24 Kla-Tencor Corporation Low-noise sensor and an inspection system using a low-noise sensor
US9748294B2 (en) 2014-01-10 2017-08-29 Hamamatsu Photonics K.K. Anti-reflection layer for back-illuminated sensor

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001274081A (ja) * 1999-11-17 2001-10-05 Applied Materials Inc スペックルを減少する物体検査用の装置及び方法
JP2008532044A (ja) * 2005-03-02 2008-08-14 ケーエルエー−テンカー テクノロジィース コーポレイション 拡張型同時多スポット撮像検査
JP2007086108A (ja) * 2005-09-20 2007-04-05 Megaopto Co Ltd 深紫外レーザー光の発生方法および深紫外レーザー装置
WO2011158927A1 (ja) * 2010-06-17 2011-12-22 株式会社ニコン 紫外レーザ装置
JP2012220388A (ja) * 2011-04-12 2012-11-12 Lasertec Corp 検査装置及び欠陥検査方法
WO2012173943A2 (en) * 2011-06-13 2012-12-20 Kla-Tencor Corporation Semiconductor inspection and metrology system using laser pulse multiplier

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