KR102163442B1 - 단결정 기판의 가공 방법 - Google Patents

단결정 기판의 가공 방법 Download PDF

Info

Publication number
KR102163442B1
KR102163442B1 KR1020150049536A KR20150049536A KR102163442B1 KR 102163442 B1 KR102163442 B1 KR 102163442B1 KR 1020150049536 A KR1020150049536 A KR 1020150049536A KR 20150049536 A KR20150049536 A KR 20150049536A KR 102163442 B1 KR102163442 B1 KR 102163442B1
Authority
KR
South Korea
Prior art keywords
single crystal
crystal substrate
substrate
shielding tunnel
laser beam
Prior art date
Application number
KR1020150049536A
Other languages
English (en)
Korean (ko)
Other versions
KR20150121659A (ko
Inventor
히로시 모리카즈
노보루 다케다
Original Assignee
가부시기가이샤 디스코
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가부시기가이샤 디스코 filed Critical 가부시기가이샤 디스코
Publication of KR20150121659A publication Critical patent/KR20150121659A/ko
Application granted granted Critical
Publication of KR102163442B1 publication Critical patent/KR102163442B1/ko

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02587—Structure
    • H01L21/0259—Microstructure
    • H01L21/02598—Microstructure monocrystalline
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/50—Working by transmitting the laser beam through or within the workpiece
    • B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H01L21/3043—Making grooves, e.g. cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Mechanical Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Plasma & Fusion (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Laser Beam Processing (AREA)
  • Dicing (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Grinding Of Cylindrical And Plane Surfaces (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Electromagnetism (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
KR1020150049536A 2014-04-21 2015-04-08 단결정 기판의 가공 방법 KR102163442B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2014-087439 2014-04-21
JP2014087439A JP6324796B2 (ja) 2014-04-21 2014-04-21 単結晶基板の加工方法

Publications (2)

Publication Number Publication Date
KR20150121659A KR20150121659A (ko) 2015-10-29
KR102163442B1 true KR102163442B1 (ko) 2020-10-08

Family

ID=54250137

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020150049536A KR102163442B1 (ko) 2014-04-21 2015-04-08 단결정 기판의 가공 방법

Country Status (5)

Country Link
JP (1) JP6324796B2 (ja)
KR (1) KR102163442B1 (ja)
CN (1) CN105006431B (ja)
DE (1) DE102015207193A1 (ja)
TW (1) TWI630968B (ja)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6466692B2 (ja) * 2014-11-05 2019-02-06 株式会社ディスコ ウエーハの加工方法
DE102017201151B4 (de) * 2016-02-01 2024-05-08 Disco Corporation Verfahren zum Bearbeiten eines Substrats
JP6755707B2 (ja) * 2016-05-12 2020-09-16 株式会社ディスコ レーザー加工装置
JP6906845B2 (ja) * 2017-06-22 2021-07-21 株式会社ディスコ 被加工物の加工方法
JP7098284B2 (ja) * 2017-07-06 2022-07-11 株式会社ディスコ レーザー加工装置およびレーザー加工方法
JP2019029941A (ja) * 2017-08-02 2019-02-21 株式会社ディスコ 弾性波デバイス用基板の製造方法
JP6985060B2 (ja) * 2017-08-17 2021-12-22 株式会社ディスコ ウエーハの加工方法
CN113370056A (zh) * 2021-05-31 2021-09-10 贵州航天电子科技有限公司 一种辐射器的抛光方法

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004168622A (ja) 2002-11-22 2004-06-17 Kyocera Corp 単結晶サファイア基板およびその製造方法
JP2005288503A (ja) 2004-03-31 2005-10-20 Laser System:Kk レーザ加工方法
JP2006114786A (ja) 2004-10-15 2006-04-27 Laser System:Kk レーザ加工方法
JP2007134454A (ja) 2005-11-09 2007-05-31 Toshiba Corp 半導体装置の製造方法
JP2007137736A (ja) 2005-11-21 2007-06-07 Shin Etsu Chem Co Ltd サファイア基板の製造方法
JP2013027929A (ja) 2012-09-27 2013-02-07 Mitsuboshi Diamond Industrial Co Ltd レーザー加工装置、被加工物の加工方法および被加工物の分割方法
JP2014041927A (ja) 2012-08-22 2014-03-06 Hamamatsu Photonics Kk 加工対象物切断方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10305420A (ja) 1997-03-04 1998-11-17 Ngk Insulators Ltd 酸化物単結晶からなる母材の加工方法、機能性デバイスの製造方法
JP3408805B2 (ja) 2000-09-13 2003-05-19 浜松ホトニクス株式会社 切断起点領域形成方法及び加工対象物切断方法
ATE534142T1 (de) * 2002-03-12 2011-12-15 Hamamatsu Photonics Kk Verfahren zum auftrennen eines substrats
JP2005129851A (ja) * 2003-10-27 2005-05-19 Disco Abrasive Syst Ltd レーザ光線を利用した加工方法
JP2005203541A (ja) * 2004-01-15 2005-07-28 Disco Abrasive Syst Ltd ウエーハのレーザー加工方法
JP2005268752A (ja) * 2004-02-19 2005-09-29 Canon Inc レーザ割断方法、被割断部材および半導体素子チップ
JP4035735B2 (ja) * 2005-06-29 2008-01-23 コニカミノルタビジネステクノロジーズ株式会社 画像通信装置および画像通信プログラム
JP2007142001A (ja) * 2005-11-16 2007-06-07 Denso Corp レーザ加工装置およびレーザ加工方法
JP4478184B2 (ja) * 2008-01-17 2010-06-09 株式会社レーザーシステム レーザ割断方法およびレーザ加工装置
JP2013000748A (ja) * 2011-06-10 2013-01-07 Showa Denko Kk 半導体ウエーハのレーザ加工方法、半導体発光チップの製造方法およびレーザ加工装置

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004168622A (ja) 2002-11-22 2004-06-17 Kyocera Corp 単結晶サファイア基板およびその製造方法
JP2005288503A (ja) 2004-03-31 2005-10-20 Laser System:Kk レーザ加工方法
JP2006114786A (ja) 2004-10-15 2006-04-27 Laser System:Kk レーザ加工方法
JP2007134454A (ja) 2005-11-09 2007-05-31 Toshiba Corp 半導体装置の製造方法
JP2007137736A (ja) 2005-11-21 2007-06-07 Shin Etsu Chem Co Ltd サファイア基板の製造方法
JP2014041927A (ja) 2012-08-22 2014-03-06 Hamamatsu Photonics Kk 加工対象物切断方法
JP2013027929A (ja) 2012-09-27 2013-02-07 Mitsuboshi Diamond Industrial Co Ltd レーザー加工装置、被加工物の加工方法および被加工物の分割方法

Also Published As

Publication number Publication date
CN105006431B (zh) 2019-04-26
CN105006431A (zh) 2015-10-28
JP2015207664A (ja) 2015-11-19
TW201601866A (zh) 2016-01-16
TWI630968B (zh) 2018-08-01
DE102015207193A1 (de) 2015-10-22
JP6324796B2 (ja) 2018-05-16
KR20150121659A (ko) 2015-10-29

Similar Documents

Publication Publication Date Title
KR102163442B1 (ko) 단결정 기판의 가공 방법
JP6121281B2 (ja) ウエーハの加工方法
JP6151557B2 (ja) レーザー加工方法
KR102196934B1 (ko) 웨이퍼 가공 방법
KR101121495B1 (ko) 판상부재의 분할방법 및 분할장치
JP6495056B2 (ja) 単結晶基板の加工方法
JP2005203541A (ja) ウエーハのレーザー加工方法
JP6501273B2 (ja) 基板処理の方法
KR101661776B1 (ko) 광디바이스 웨이퍼의 가공 방법
KR20180119481A (ko) SiC 웨이퍼의 생성 방법
TWI692017B (zh) 單晶基板之加工方法
CN107039563B (zh) 光器件晶片的加工方法
TW201719736A (zh) 光元件晶圓的加工方法
KR20170066250A (ko) 웨이퍼의 가공 방법
KR20160094859A (ko) 단결정 부재의 가공 방법
TWI693633B (zh) 單晶基板之加工方法
KR102524259B1 (ko) 가공 방법
KR102518004B1 (ko) 피가공물의 가공 방법
JP2017041604A (ja) 光デバイスウエーハの加工方法
JP6576782B2 (ja) ウエーハの加工方法
JP2013219076A (ja) 光デバイスウエーハの加工方法
JP2017076713A (ja) ウエーハの加工方法
JP2007214417A (ja) ウエーハの分割方法

Legal Events

Date Code Title Description
E902 Notification of reason for refusal
E701 Decision to grant or registration of patent right