DE102015207193A1 - Einkristallsubstrat-Bearbeitungsverfahren - Google Patents
Einkristallsubstrat-Bearbeitungsverfahren Download PDFInfo
- Publication number
- DE102015207193A1 DE102015207193A1 DE102015207193.6A DE102015207193A DE102015207193A1 DE 102015207193 A1 DE102015207193 A1 DE 102015207193A1 DE 102015207193 A DE102015207193 A DE 102015207193A DE 102015207193 A1 DE102015207193 A1 DE 102015207193A1
- Authority
- DE
- Germany
- Prior art keywords
- crystal substrate
- single crystal
- shielding
- substrate
- laser beam
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 239
- 239000013078 crystal Substances 0.000 title claims abstract description 124
- 238000003672 processing method Methods 0.000 title claims abstract description 22
- 238000005498 polishing Methods 0.000 claims abstract description 29
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 28
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 23
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 20
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 16
- 239000006061 abrasive grain Substances 0.000 claims description 14
- 230000002093 peripheral effect Effects 0.000 claims description 11
- 239000000377 silicon dioxide Substances 0.000 claims description 7
- 239000000463 material Substances 0.000 claims description 5
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 claims description 4
- 230000003287 optical effect Effects 0.000 description 84
- 235000012431 wafers Nutrition 0.000 description 84
- 229910052594 sapphire Inorganic materials 0.000 description 43
- 239000010980 sapphire Substances 0.000 description 43
- 230000005641 tunneling Effects 0.000 description 13
- 238000003384 imaging method Methods 0.000 description 8
- 238000003754 machining Methods 0.000 description 8
- 239000003795 chemical substances by application Substances 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 230000005855 radiation Effects 0.000 description 6
- 238000002679 ablation Methods 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 5
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 description 4
- 239000012216 imaging agent Substances 0.000 description 4
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 3
- 230000003247 decreasing effect Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 2
- 230000010355 oscillation Effects 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- BUHVIAUBTBOHAG-FOYDDCNASA-N (2r,3r,4s,5r)-2-[6-[[2-(3,5-dimethoxyphenyl)-2-(2-methylphenyl)ethyl]amino]purin-9-yl]-5-(hydroxymethyl)oxolane-3,4-diol Chemical compound COC1=CC(OC)=CC(C(CNC=2C=3N=CN(C=3N=CN=2)[C@H]2[C@@H]([C@H](O)[C@@H](CO)O2)O)C=2C(=CC=CC=2)C)=C1 BUHVIAUBTBOHAG-FOYDDCNASA-N 0.000 description 1
- HMUNWXXNJPVALC-UHFFFAOYSA-N 1-[4-[2-(2,3-dihydro-1H-inden-2-ylamino)pyrimidin-5-yl]piperazin-1-yl]-2-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)ethanone Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)N1CCN(CC1)C(CN1CC2=C(CC1)NN=N2)=O HMUNWXXNJPVALC-UHFFFAOYSA-N 0.000 description 1
- VZSRBBMJRBPUNF-UHFFFAOYSA-N 2-(2,3-dihydro-1H-inden-2-ylamino)-N-[3-oxo-3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propyl]pyrimidine-5-carboxamide Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)C(=O)NCCC(N1CC2=C(CC1)NN=N2)=O VZSRBBMJRBPUNF-UHFFFAOYSA-N 0.000 description 1
- LDXJRKWFNNFDSA-UHFFFAOYSA-N 2-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)-1-[4-[2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidin-5-yl]piperazin-1-yl]ethanone Chemical compound C1CN(CC2=NNN=C21)CC(=O)N3CCN(CC3)C4=CN=C(N=C4)NCC5=CC(=CC=C5)OC(F)(F)F LDXJRKWFNNFDSA-UHFFFAOYSA-N 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- NIPNSKYNPDTRPC-UHFFFAOYSA-N N-[2-oxo-2-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)ethyl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C(CNC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)N1CC2=C(CC1)NN=N2 NIPNSKYNPDTRPC-UHFFFAOYSA-N 0.000 description 1
- AFCARXCZXQIEQB-UHFFFAOYSA-N N-[3-oxo-3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propyl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C(CCNC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)N1CC2=C(CC1)NN=N2 AFCARXCZXQIEQB-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000011295 pitch Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/50—Working by transmitting the laser beam through or within the workpiece
- B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
- H01L21/3043—Making grooves, e.g. cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2014-087439 | 2014-04-21 | ||
| JP2014087439A JP6324796B2 (ja) | 2014-04-21 | 2014-04-21 | 単結晶基板の加工方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE102015207193A1 true DE102015207193A1 (de) | 2015-10-22 |
Family
ID=54250137
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE102015207193.6A Pending DE102015207193A1 (de) | 2014-04-21 | 2015-04-21 | Einkristallsubstrat-Bearbeitungsverfahren |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JP6324796B2 (ja) |
| KR (1) | KR102163442B1 (ja) |
| CN (1) | CN105006431B (ja) |
| DE (1) | DE102015207193A1 (ja) |
| TW (1) | TWI630968B (ja) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6466692B2 (ja) * | 2014-11-05 | 2019-02-06 | 株式会社ディスコ | ウエーハの加工方法 |
| DE102017201151B4 (de) * | 2016-02-01 | 2024-05-08 | Disco Corporation | Verfahren zum Bearbeiten eines Substrats |
| JP6755707B2 (ja) * | 2016-05-12 | 2020-09-16 | 株式会社ディスコ | レーザー加工装置 |
| JP6906845B2 (ja) * | 2017-06-22 | 2021-07-21 | 株式会社ディスコ | 被加工物の加工方法 |
| JP7098284B2 (ja) * | 2017-07-06 | 2022-07-11 | 株式会社ディスコ | レーザー加工装置およびレーザー加工方法 |
| JP2019029941A (ja) * | 2017-08-02 | 2019-02-21 | 株式会社ディスコ | 弾性波デバイス用基板の製造方法 |
| JP6985060B2 (ja) * | 2017-08-17 | 2021-12-22 | 株式会社ディスコ | ウエーハの加工方法 |
| CN113370056A (zh) * | 2021-05-31 | 2021-09-10 | 贵州航天电子科技有限公司 | 一种辐射器的抛光方法 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10305420A (ja) | 1997-03-04 | 1998-11-17 | Ngk Insulators Ltd | 酸化物単結晶からなる母材の加工方法、機能性デバイスの製造方法 |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3408805B2 (ja) | 2000-09-13 | 2003-05-19 | 浜松ホトニクス株式会社 | 切断起点領域形成方法及び加工対象物切断方法 |
| ATE534142T1 (de) * | 2002-03-12 | 2011-12-15 | Hamamatsu Photonics Kk | Verfahren zum auftrennen eines substrats |
| JP2004168622A (ja) * | 2002-11-22 | 2004-06-17 | Kyocera Corp | 単結晶サファイア基板およびその製造方法 |
| JP2005129851A (ja) * | 2003-10-27 | 2005-05-19 | Disco Abrasive Syst Ltd | レーザ光線を利用した加工方法 |
| JP2005203541A (ja) * | 2004-01-15 | 2005-07-28 | Disco Abrasive Syst Ltd | ウエーハのレーザー加工方法 |
| JP2005268752A (ja) * | 2004-02-19 | 2005-09-29 | Canon Inc | レーザ割断方法、被割断部材および半導体素子チップ |
| JP4418282B2 (ja) * | 2004-03-31 | 2010-02-17 | 株式会社レーザーシステム | レーザ加工方法 |
| JP4607537B2 (ja) * | 2004-10-15 | 2011-01-05 | 株式会社レーザーシステム | レーザ加工方法 |
| JP4035735B2 (ja) * | 2005-06-29 | 2008-01-23 | コニカミノルタビジネステクノロジーズ株式会社 | 画像通信装置および画像通信プログラム |
| JP2007134454A (ja) * | 2005-11-09 | 2007-05-31 | Toshiba Corp | 半導体装置の製造方法 |
| JP2007142001A (ja) * | 2005-11-16 | 2007-06-07 | Denso Corp | レーザ加工装置およびレーザ加工方法 |
| JP2007137736A (ja) * | 2005-11-21 | 2007-06-07 | Shin Etsu Chem Co Ltd | サファイア基板の製造方法 |
| JP4478184B2 (ja) * | 2008-01-17 | 2010-06-09 | 株式会社レーザーシステム | レーザ割断方法およびレーザ加工装置 |
| JP2013000748A (ja) * | 2011-06-10 | 2013-01-07 | Showa Denko Kk | 半導体ウエーハのレーザ加工方法、半導体発光チップの製造方法およびレーザ加工装置 |
| JP2014041927A (ja) * | 2012-08-22 | 2014-03-06 | Hamamatsu Photonics Kk | 加工対象物切断方法 |
| JP5360278B2 (ja) * | 2012-09-27 | 2013-12-04 | 三星ダイヤモンド工業株式会社 | レーザー加工装置、被加工物の加工方法および被加工物の分割方法 |
-
2014
- 2014-04-21 JP JP2014087439A patent/JP6324796B2/ja active Active
-
2015
- 2015-03-11 TW TW104107783A patent/TWI630968B/zh active
- 2015-04-08 KR KR1020150049536A patent/KR102163442B1/ko active IP Right Grant
- 2015-04-20 CN CN201510188618.XA patent/CN105006431B/zh active Active
- 2015-04-21 DE DE102015207193.6A patent/DE102015207193A1/de active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10305420A (ja) | 1997-03-04 | 1998-11-17 | Ngk Insulators Ltd | 酸化物単結晶からなる母材の加工方法、機能性デバイスの製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| CN105006431B (zh) | 2019-04-26 |
| CN105006431A (zh) | 2015-10-28 |
| JP2015207664A (ja) | 2015-11-19 |
| TW201601866A (zh) | 2016-01-16 |
| TWI630968B (zh) | 2018-08-01 |
| JP6324796B2 (ja) | 2018-05-16 |
| KR20150121659A (ko) | 2015-10-29 |
| KR102163442B1 (ko) | 2020-10-08 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| R082 | Change of representative |
Representative=s name: HOFFMANN - EITLE PATENT- UND RECHTSANWAELTE PA, DE |
|
| R083 | Amendment of/additions to inventor(s) | ||
| R012 | Request for examination validly filed | ||
| R016 | Response to examination communication |