KR102139218B1 - 선형 검사 시스템 - Google Patents

선형 검사 시스템 Download PDF

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Publication number
KR102139218B1
KR102139218B1 KR1020177034162A KR20177034162A KR102139218B1 KR 102139218 B1 KR102139218 B1 KR 102139218B1 KR 1020177034162 A KR1020177034162 A KR 1020177034162A KR 20177034162 A KR20177034162 A KR 20177034162A KR 102139218 B1 KR102139218 B1 KR 102139218B1
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KR
South Korea
Prior art keywords
inspection
unit
substrate
substrates
inspection system
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KR1020177034162A
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English (en)
Korean (ko)
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KR20170132912A (ko
Inventor
아사프 슈레진저
성데 총
Original Assignee
어플라이드 머티어리얼스, 인코포레이티드
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Publication of KR20170132912A publication Critical patent/KR20170132912A/ko
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    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84Systems specially adapted for particular applications
    • G01N21/88Investigating the presence of flaws or contamination
    • G01N21/95Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501Semiconductor wafers
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/62Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
    • G01N21/63Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
    • G01N21/64Fluorescence; Phosphorescence
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/62Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
    • G01N21/63Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
    • G01N21/64Fluorescence; Phosphorescence
    • G01N21/6489Photoluminescence of semiconductors
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26Testing of individual semiconductor devices
    • G01R31/2601Apparatus or methods therefor
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26Testing of individual semiconductor devices
    • G01R31/2648Characterising semiconductor materials
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67155Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67161Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
    • H01L21/67173Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers in-line arrangement
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67242Apparatus for monitoring, sorting or marking
    • H01L21/67253Process monitoring, e.g. flow or thickness monitoring
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67242Apparatus for monitoring, sorting or marking
    • H01L21/67271Sorting devices
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67242Apparatus for monitoring, sorting or marking
    • H01L21/67288Monitoring of warpage, curvature, damage, defects or the like
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02SGENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
    • H02S50/00Monitoring or testing of PV systems, e.g. load balancing or fault identification
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02SGENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
    • H02S50/00Monitoring or testing of PV systems, e.g. load balancing or fault identification
    • H02S50/10Testing of PV devices, e.g. of PV modules or single PV cells
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02SGENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
    • H02S50/00Monitoring or testing of PV systems, e.g. load balancing or fault identification
    • H02S50/10Testing of PV devices, e.g. of PV modules or single PV cells
    • H02S50/15Testing of PV devices, e.g. of PV modules or single PV cells using optical means, e.g. using electroluminescence
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2201/00Features of devices classified in G01N21/00
    • G01N2201/06Illumination; Optics
    • G01N2201/061Sources
    • G01N2201/06113Coherent sources; lasers
    • G01N2201/0612Laser diodes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10Measuring as part of the manufacturing process
    • H01L22/12Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy

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  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Analytical Chemistry (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • General Health & Medical Sciences (AREA)
  • Biochemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
  • Electromagnetism (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
KR1020177034162A 2014-06-27 2015-06-03 선형 검사 시스템 KR102139218B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201462018300P 2014-06-27 2014-06-27
US62/018,300 2014-06-27
US14/493,824 US9341580B2 (en) 2014-06-27 2014-09-23 Linear inspection system
US14/493,824 2014-09-23
PCT/US2015/034045 WO2015199930A1 (fr) 2014-06-27 2015-06-03 Système d'inspection linéaire

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
KR1020177021822A Division KR101804331B1 (ko) 2014-06-27 2015-06-03 선형 검사 시스템

Publications (2)

Publication Number Publication Date
KR20170132912A KR20170132912A (ko) 2017-12-04
KR102139218B1 true KR102139218B1 (ko) 2020-07-29

Family

ID=54930190

Family Applications (3)

Application Number Title Priority Date Filing Date
KR1020177034162A KR102139218B1 (ko) 2014-06-27 2015-06-03 선형 검사 시스템
KR1020177021822A KR101804331B1 (ko) 2014-06-27 2015-06-03 선형 검사 시스템
KR1020177002452A KR101767891B1 (ko) 2014-06-27 2015-06-03 선형 검사 시스템

Family Applications After (2)

Application Number Title Priority Date Filing Date
KR1020177021822A KR101804331B1 (ko) 2014-06-27 2015-06-03 선형 검사 시스템
KR1020177002452A KR101767891B1 (ko) 2014-06-27 2015-06-03 선형 검사 시스템

Country Status (6)

Country Link
US (1) US9341580B2 (fr)
KR (3) KR102139218B1 (fr)
CN (2) CN112530822A (fr)
SG (1) SG11201609657YA (fr)
TW (2) TWI586963B (fr)
WO (1) WO2015199930A1 (fr)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9754365B2 (en) * 2014-02-21 2017-09-05 Applied Materials, Inc. Wafer inspection method and software
FR3045156B1 (fr) * 2015-12-11 2017-12-22 Soitec Silicon On Insulator Procede de detection de defauts et dispositif associe
JP6752638B2 (ja) * 2016-06-27 2020-09-09 株式会社ディスコ 内部クラック検出方法、および内部クラック検出装置
JP6697984B2 (ja) * 2016-08-31 2020-05-27 東京エレクトロン株式会社 基板処理方法及び基板処理システム
JP6765926B2 (ja) * 2016-10-07 2020-10-07 株式会社ディスコ 加工装置
CN110178075B (zh) * 2017-01-27 2022-05-03 默克专利股份有限公司 用于检测可切换光学元件的基板破裂的方法和可切换光学器件
US11143697B2 (en) * 2017-04-28 2021-10-12 Advantest Corporation Automated handling of different form factor devices under test in test cell
US10406562B2 (en) * 2017-07-21 2019-09-10 Applied Materials, Inc. Automation for rotary sorters
US10818562B2 (en) * 2017-11-30 2020-10-27 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor structure and testing method thereof
JP7051445B2 (ja) * 2018-01-10 2022-04-11 日東電工株式会社 光学表示パネルの連続検査方法および連続検査装置、並びに、光学表示パネルの連続製造方法および連続製造システム
CN108465648A (zh) * 2018-04-23 2018-08-31 苏州香农智能科技有限公司 一种基于机器视觉的磁芯自动分拣系统
CN112005356A (zh) * 2018-05-03 2020-11-27 应用材料公司 高速旋转分类器中的基板倾斜控制
CN109245722B (zh) * 2018-07-19 2019-12-10 武汉爱疆科技有限公司 一种全自动小组件测试仪
US11488848B2 (en) * 2018-07-31 2022-11-01 Taiwan Semiconductor Manufacturing Co., Ltd. Integrated semiconductor die vessel processing workstations
DE102018119171A1 (de) * 2018-08-07 2020-02-13 Wavelabs Solar Metrology Systems Gmbh Optoelektronisches Solarzellen-Testsystem für eine inline-Solarzellen-Produktionsanlage und Verfahren zum Optimieren der inline-Produktion von Solarzellen unter Einsatz eines solchen optoelektronischen Solarzellen-Testsystems
DE102018130595A1 (de) 2018-11-30 2020-06-04 Hennecke Systems Gmbh Sensorstation sowie Verfahren zum Vermessen von Wafern
CN109975411B (zh) * 2019-04-17 2021-09-24 江苏至上检测科技有限公司 轴零件批量相控阵超声检测流水线
US11221300B2 (en) * 2020-03-20 2022-01-11 KLA Corp. Determining metrology-like information for a specimen using an inspection tool
US11688618B2 (en) 2020-12-10 2023-06-27 Applied Materials, Inc. Method and apparatus for continuous substrate cassette loading
CN113155193B (zh) * 2021-04-19 2022-12-13 上海磐盟电子材料有限公司 一种基于云计算的晶圆片智能检测分类方法、装置和系统
DE102021111837A1 (de) * 2021-05-06 2022-11-10 LAW-NDT Meß- und Prüfsysteme GmbH Prüfanlage für eine Mehrzahl von vereinzelbaren Prüfobjekten
KR102399076B1 (ko) * 2021-09-16 2022-05-17 주식회사 엠아이티 초음파 프로브를 이용한 불량 소자 자동 검사 장치 및 이를 이용한 검사방법
US20230349838A1 (en) * 2022-04-29 2023-11-02 Applied Materials, Inc. Edge inspection of silicon wafers by image stacking
CN117969418A (zh) * 2024-03-30 2024-05-03 江苏格林保尔光伏有限公司 一种Top-Con单晶硅电池片的色差识别设备及方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009536448A (ja) 2006-05-05 2009-10-08 ビーティー イメージング ピーティーワイ リミテッド ルミネセンス像形成を用いた間接バンドギャップ半導体の試験方法およびシステム
KR101138041B1 (ko) 2009-09-30 2012-04-23 가부시키가이샤 히다치 하이테크놀로지즈 인라인 기판 검사 장치의 광학 시스템 교정 방법 및 인라인 기판 검사 장치
JP2012182273A (ja) 2011-03-01 2012-09-20 Hitachi High-Technologies Corp ガラス基板インライン検査方法及びその装置

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4454472A (en) 1982-02-19 1984-06-12 Rca Corporation Method and apparatus for determining minority carrier diffusion length in semiconductors
JPS59501649A (ja) 1982-09-20 1984-09-13 コントレツクス インコ−ポレイテツド 自動的半導体表面検査方法および装置
EP0416787B1 (fr) 1989-09-01 1995-05-10 AT&T Corp. Traitement par plasma de semi-conducteurs III-V, contrôlé par spectroscopie de photoluminescence
US5396332A (en) 1993-02-08 1995-03-07 Ciszek; Theodoer F. Apparatus and method for measuring the thickness of a semiconductor wafer
US5386119A (en) 1993-03-25 1995-01-31 Hughes Aircraft Company Apparatus and method for thick wafer measurement
JP2943673B2 (ja) 1995-10-31 1999-08-30 日本電気株式会社 半導体基板の製造装置及び製造方法
WO1997045698A1 (fr) 1996-05-31 1997-12-04 Tropel Corporation Interferometre destine a la mesure des variations d'epaisseur de plaquettes de semi-conducteurs
JP2002224982A (ja) 2000-12-01 2002-08-13 Yaskawa Electric Corp 薄型基板搬送用ロボットおよび薄型基板検出方法
US6903446B2 (en) 2001-10-23 2005-06-07 Cree, Inc. Pattern for improved visual inspection of semiconductor devices
US7171035B2 (en) 2002-11-06 2007-01-30 Texas Instruments Incorporated Alignment mark for e-beam inspection of a semiconductor wafer
JP4464113B2 (ja) * 2003-11-27 2010-05-19 株式会社ディスコ ウエーハの加工装置
US8098926B2 (en) * 2007-01-10 2012-01-17 Applied Materials Israel, Ltd. Method and system for evaluating an evaluated pattern of a mask
KR100782424B1 (ko) 2007-07-27 2007-12-05 (주)쎄미시스코 유리기판의 품질 검사장치
KR101347065B1 (ko) 2007-12-20 2014-01-10 주성엔지니어링(주) 기판 검사 시스템 및 방법, 및 그를 이용한 태양전지제조방법
TWI512865B (zh) * 2008-09-08 2015-12-11 Rudolph Technologies Inc 晶圓邊緣檢查技術
SG162631A1 (en) * 2008-12-17 2010-07-29 Rokko Ventures Pte Ltd System and processing of a substrate
US8629411B2 (en) 2010-07-13 2014-01-14 First Solar, Inc. Photoluminescence spectroscopy
KR101291111B1 (ko) 2011-03-23 2013-08-01 한국기계전기전자시험연구원 광 측정 시스템
CN103874918A (zh) 2011-08-12 2014-06-18 Bt成像股份有限公司 半导体晶片中掺杂变化的光致发光成像
KR101313680B1 (ko) * 2011-10-12 2013-10-02 위드로봇 주식회사 외관 측정 시스템 및 그 방법
EP2600140A1 (fr) 2011-11-29 2013-06-05 Hennecke Systems GmbH Système d'inspection
KR20130073074A (ko) 2011-12-23 2013-07-03 주식회사 포틱스 웨이퍼 이송장치
TWI574136B (zh) * 2012-02-03 2017-03-11 應用材料以色列公司 基於設計之缺陷分類之方法及系統
HUE056308T2 (hu) 2013-03-19 2022-02-28 Hennecke Systems Gmbh Eljárás és rendszer sík félvezetõ tárgyak ellenõrzéséhez

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009536448A (ja) 2006-05-05 2009-10-08 ビーティー イメージング ピーティーワイ リミテッド ルミネセンス像形成を用いた間接バンドギャップ半導体の試験方法およびシステム
KR101138041B1 (ko) 2009-09-30 2012-04-23 가부시키가이샤 히다치 하이테크놀로지즈 인라인 기판 검사 장치의 광학 시스템 교정 방법 및 인라인 기판 검사 장치
JP2012182273A (ja) 2011-03-01 2012-09-20 Hitachi High-Technologies Corp ガラス基板インライン検査方法及びその装置

Also Published As

Publication number Publication date
SG11201609657YA (en) 2017-01-27
WO2015199930A1 (fr) 2015-12-30
US20150377796A1 (en) 2015-12-31
KR20170093265A (ko) 2017-08-14
CN106463432A (zh) 2017-02-22
TW201734460A (zh) 2017-10-01
KR20170018080A (ko) 2017-02-15
US9341580B2 (en) 2016-05-17
KR20170132912A (ko) 2017-12-04
KR101767891B1 (ko) 2017-08-14
CN112530822A (zh) 2021-03-19
TWI586963B (zh) 2017-06-11
KR101804331B1 (ko) 2017-12-04
TWI653450B (zh) 2019-03-11
TW201602580A (zh) 2016-01-16

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