KR102087933B1 - 발광 소자 및 이를 포함하는 발광 소자 어레이 - Google Patents

발광 소자 및 이를 포함하는 발광 소자 어레이 Download PDF

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KR102087933B1
KR102087933B1 KR1020120124381A KR20120124381A KR102087933B1 KR 102087933 B1 KR102087933 B1 KR 102087933B1 KR 1020120124381 A KR1020120124381 A KR 1020120124381A KR 20120124381 A KR20120124381 A KR 20120124381A KR 102087933 B1 KR102087933 B1 KR 102087933B1
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layer
light emitting
disposed
electrode
layers
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KR20140057968A (ko
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최병연
이용경
홍기석
이지환
범희영
주현승
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엘지이노텍 주식회사
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Priority to KR1020120124381A priority Critical patent/KR102087933B1/ko
Priority to US14/062,131 priority patent/US9236526B2/en
Priority to CN201310534465.0A priority patent/CN103811597B/zh
Priority to EP13191337.8A priority patent/EP2728632B1/en
Priority to JP2013229122A priority patent/JP2014093532A/ja
Publication of KR20140057968A publication Critical patent/KR20140057968A/ko
Priority to US14/962,083 priority patent/US9640583B2/en
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
    • H10H29/142—Two-dimensional arrangements, e.g. asymmetric LED layout
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/814—Bodies having reflecting means, e.g. semiconductor Bragg reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/816—Bodies having carrier transport control structures, e.g. highly-doped semiconductor layers or current-blocking structures
    • H10H20/8162—Current-blocking structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H10H20/841—Reflective coatings, e.g. dielectric Bragg reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN

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KR1020120124381A 2012-11-05 2012-11-05 발광 소자 및 이를 포함하는 발광 소자 어레이 Active KR102087933B1 (ko)

Priority Applications (6)

Application Number Priority Date Filing Date Title
KR1020120124381A KR102087933B1 (ko) 2012-11-05 2012-11-05 발광 소자 및 이를 포함하는 발광 소자 어레이
US14/062,131 US9236526B2 (en) 2012-11-05 2013-10-24 Light emitting device and light emitting device array
CN201310534465.0A CN103811597B (zh) 2012-11-05 2013-11-01 发光器件和发光器件阵列
EP13191337.8A EP2728632B1 (en) 2012-11-05 2013-11-04 Light emitting device
JP2013229122A JP2014093532A (ja) 2012-11-05 2013-11-05 発光素子
US14/962,083 US9640583B2 (en) 2012-11-05 2015-12-08 Light emitting device and light emitting device array

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020120124381A KR102087933B1 (ko) 2012-11-05 2012-11-05 발광 소자 및 이를 포함하는 발광 소자 어레이

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KR20140057968A KR20140057968A (ko) 2014-05-14
KR102087933B1 true KR102087933B1 (ko) 2020-04-14

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US (2) US9236526B2 (enExample)
EP (1) EP2728632B1 (enExample)
JP (1) JP2014093532A (enExample)
KR (1) KR102087933B1 (enExample)
CN (1) CN103811597B (enExample)

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CN103811597A (zh) 2014-05-21
US20160093667A1 (en) 2016-03-31
JP2014093532A (ja) 2014-05-19
US20140124730A1 (en) 2014-05-08
EP2728632A3 (en) 2014-07-09
EP2728632B1 (en) 2021-12-15
KR20140057968A (ko) 2014-05-14
CN103811597B (zh) 2018-12-21
US9640583B2 (en) 2017-05-02
EP2728632A2 (en) 2014-05-07
US9236526B2 (en) 2016-01-12

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