CN103811597B - 发光器件和发光器件阵列 - Google Patents

发光器件和发光器件阵列 Download PDF

Info

Publication number
CN103811597B
CN103811597B CN201310534465.0A CN201310534465A CN103811597B CN 103811597 B CN103811597 B CN 103811597B CN 201310534465 A CN201310534465 A CN 201310534465A CN 103811597 B CN103811597 B CN 103811597B
Authority
CN
China
Prior art keywords
layer
light
electrode
adhesion
luminescent device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201310534465.0A
Other languages
English (en)
Chinese (zh)
Other versions
CN103811597A (zh
Inventor
崔炳然
范熙荣
李容京
李知桓
朱炫承
洪奇锡
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Suzhou Liyu Semiconductor Co ltd
Original Assignee
LG Innotek Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by LG Innotek Co Ltd filed Critical LG Innotek Co Ltd
Publication of CN103811597A publication Critical patent/CN103811597A/zh
Application granted granted Critical
Publication of CN103811597B publication Critical patent/CN103811597B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
    • H10H29/142—Two-dimensional arrangements, e.g. asymmetric LED layout
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/814—Bodies having reflecting means, e.g. semiconductor Bragg reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/816—Bodies having carrier transport control structures, e.g. highly-doped semiconductor layers or current-blocking structures
    • H10H20/8162—Current-blocking structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H10H20/841—Reflective coatings, e.g. dielectric Bragg reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN

Landscapes

  • Led Devices (AREA)
  • Led Device Packages (AREA)
CN201310534465.0A 2012-11-05 2013-11-01 发光器件和发光器件阵列 Active CN103811597B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2012-0124381 2012-11-05
KR1020120124381A KR102087933B1 (ko) 2012-11-05 2012-11-05 발광 소자 및 이를 포함하는 발광 소자 어레이

Publications (2)

Publication Number Publication Date
CN103811597A CN103811597A (zh) 2014-05-21
CN103811597B true CN103811597B (zh) 2018-12-21

Family

ID=49513856

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201310534465.0A Active CN103811597B (zh) 2012-11-05 2013-11-01 发光器件和发光器件阵列

Country Status (5)

Country Link
US (2) US9236526B2 (enExample)
EP (1) EP2728632B1 (enExample)
JP (1) JP2014093532A (enExample)
KR (1) KR102087933B1 (enExample)
CN (1) CN103811597B (enExample)

Families Citing this family (42)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7067849B2 (en) 2001-07-17 2006-06-27 Lg Electronics Inc. Diode having high brightness and method thereof
US6949395B2 (en) * 2001-10-22 2005-09-27 Oriol, Inc. Method of making diode having reflective layer
US7148520B2 (en) 2001-10-26 2006-12-12 Lg Electronics Inc. Diode having vertical structure and method of manufacturing the same
CN102683376A (zh) 2007-01-22 2012-09-19 科锐公司 高压发光体、发光体及照明装置
US9490409B2 (en) * 2011-10-24 2016-11-08 Formosa Epitaxy Incorporation Light emmiting diode chip
US11792898B2 (en) 2012-07-01 2023-10-17 Ideal Industries Lighting Llc Enhanced fixtures for area lighting
US11160148B2 (en) 2017-06-13 2021-10-26 Ideal Industries Lighting Llc Adaptive area lamp
TWI527263B (zh) * 2013-07-17 2016-03-21 新世紀光電股份有限公司 發光二極體結構
US9502614B2 (en) * 2014-06-04 2016-11-22 Formosa Epitaxy Incorporation Light emitting diode chip, light emitting device, and wafer-level structure of light emitting diode
JP6269362B2 (ja) * 2014-07-15 2018-01-31 豊田合成株式会社 Ｉｉｉ族窒化物半導体発光素子とその製造方法
KR101888608B1 (ko) 2014-10-17 2018-09-20 엘지이노텍 주식회사 발광 소자 패키지 및 조명 장치
DE102014115740A1 (de) 2014-10-29 2016-05-04 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip
JP6327564B2 (ja) * 2014-11-12 2018-05-23 パナソニックＩｐマネジメント株式会社 半導体デバイス
KR102322841B1 (ko) * 2014-12-24 2021-11-08 엘지이노텍 주식회사 발광소자 및 이를 포함하는 발광소자 어레이
CN105870280B (zh) * 2015-01-21 2019-07-09 展晶科技(深圳)有限公司 发光二极管晶粒
KR102256632B1 (ko) * 2015-01-21 2021-05-26 엘지이노텍 주식회사 발광 소자 및 이를 제조하는 전자 빔 증착 장치
US10050081B2 (en) * 2015-04-22 2018-08-14 Genesis Photonics Inc. Light-emitting device and method for manufacturing the same
WO2016177333A1 (zh) * 2015-05-05 2016-11-10 湘能华磊光电股份有限公司 Iii族半导体发光器件倒装结构的制作方法
KR102641239B1 (ko) * 2015-07-10 2024-02-29 서울바이오시스 주식회사 발광 다이오드, 그것을 제조하는 방법 및 그것을 갖는 발광 소자 모듈
JP6651843B2 (ja) 2015-12-25 2020-02-19 日亜化学工業株式会社 発光素子
WO2017160119A1 (ko) * 2016-03-18 2017-09-21 엘지이노텍 주식회사 반도체 소자 및 이를 포함하는 표시장치
US10529696B2 (en) 2016-04-12 2020-01-07 Cree, Inc. High density pixelated LED and devices and methods thereof
US10636939B2 (en) * 2016-06-10 2020-04-28 Lg Innotek Co., Ltd. Semiconductor device
US10964862B2 (en) * 2016-09-30 2021-03-30 Sensor Electronic Technology, Inc. Semiconductor heterostructure with multiple active regions
TWI780195B (zh) 2017-08-03 2022-10-11 美商克里公司 高密度像素化發光二極體晶片和晶片陣列裝置以及製造方法
US10734363B2 (en) 2017-08-03 2020-08-04 Cree, Inc. High density pixelated-LED chips and chip array devices
KR102370621B1 (ko) * 2017-08-24 2022-03-04 삼성전자주식회사 발광 패키지 및 이를 포함하는 발광 모듈
US11393963B2 (en) * 2017-09-13 2022-07-19 Sharp Kabushiki Kaisha LED unit, image display element, and method of manufacturing the same
US10529773B2 (en) 2018-02-14 2020-01-07 Cree, Inc. Solid state lighting devices with opposing emission directions
JP6822429B2 (ja) * 2018-02-19 2021-01-27 日亜化学工業株式会社 発光素子
CN108447955B (zh) 2018-03-16 2019-07-23 厦门市三安光电科技有限公司 发光二极管芯片结构及其制作方法
JP7206628B2 (ja) * 2018-04-27 2023-01-18 セイコーエプソン株式会社 発光装置およびプロジェクター
US10903265B2 (en) 2018-12-21 2021-01-26 Cree, Inc. Pixelated-LED chips and chip array devices, and fabrication methods
CN109713103B (zh) * 2018-12-28 2021-03-02 映瑞光电科技(上海)有限公司 一种led芯片
FI128613B (en) * 2019-06-19 2020-08-31 Comptek Solutions Oy Optoelectronic device
CN110429166B (zh) * 2019-08-23 2020-12-04 厦门乾照光电股份有限公司 一种led芯片
WO2021087109A1 (en) 2019-10-29 2021-05-06 Cree, Inc. Texturing for high density pixelated-led chips
US11145789B2 (en) * 2019-11-04 2021-10-12 Epistar Corporation Light-emitting device
KR102742687B1 (ko) 2019-12-03 2024-12-16 삼성전자주식회사 반도체 발광 소자
US12027501B2 (en) * 2020-04-02 2024-07-02 Nichia Corporation Surface light source and method of manufacturing surface light source
US11437548B2 (en) 2020-10-23 2022-09-06 Creeled, Inc. Pixelated-LED chips with inter-pixel underfill materials, and fabrication methods
US20230395732A1 (en) * 2022-06-01 2023-12-07 Tamura Corporation Schottky barrier diode

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5744828A (en) * 1995-07-13 1998-04-28 Kabushiki Kaisha Toshiba Semiconductor light emitting device with blocking layer
TW201104922A (en) * 2009-05-14 2011-02-01 Showa Denko Kk Semiconductor light emitting element, manufacturing method thereof, lamp, lighting equipment, electronic equipment, mechanical equipment and electrode
CN102169934A (zh) * 2010-02-26 2011-08-31 三星Led株式会社 具有多单元阵列的半导体发光装置及其制造方法
WO2012067311A1 (en) * 2010-11-18 2012-05-24 Seoul Opto Device Co., Ltd. Light emitting diode chip having electrode pad

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10294531A (ja) * 1997-02-21 1998-11-04 Toshiba Corp 窒化物化合物半導体発光素子
JPH114020A (ja) * 1997-04-15 1999-01-06 Toshiba Corp 半導体発光素子及びその製造方法、並びに半導体発光装置
JP2002164575A (ja) * 2000-11-27 2002-06-07 Nichia Chem Ind Ltd 窒化物半導体発光素子
US6864571B2 (en) * 2003-07-07 2005-03-08 Gelcore Llc Electronic devices and methods for making same using nanotube regions to assist in thermal heat-sinking
JP2005079152A (ja) * 2003-08-28 2005-03-24 Toshiba Corp 半導体発光素子及びその製造方法
JP3802910B2 (ja) * 2004-09-13 2006-08-02 ローム株式会社 半導体発光装置
EP2750194A1 (en) 2005-06-22 2014-07-02 Seoul Viosys Co., Ltd. Light emitting device comprising a plurality of light emitting diode cells
JP2007281037A (ja) * 2006-04-03 2007-10-25 Dowa Holdings Co Ltd 半導体発光素子及びその製造方法
JP4929924B2 (ja) 2006-08-25 2012-05-09 サンケン電気株式会社 半導体発光素子、その製造方法、及び複合半導体装置
JP5130730B2 (ja) * 2007-02-01 2013-01-30 日亜化学工業株式会社 半導体発光素子
CN102779918B (zh) 2007-02-01 2015-09-02 日亚化学工业株式会社 半导体发光元件
US8085825B2 (en) * 2007-03-06 2011-12-27 Sanyo Electric Co., Ltd. Method of fabricating semiconductor laser diode apparatus and semiconductor laser diode apparatus
US8299501B2 (en) * 2007-05-30 2012-10-30 Nichia Corporation Nitride semiconductor device
JP5123269B2 (ja) * 2008-09-30 2013-01-23 ソウル オプト デバイス カンパニー リミテッド 発光素子及びその製造方法
JP5196160B2 (ja) * 2008-10-17 2013-05-15 日亜化学工業株式会社 半導体発光素子
JP2010238802A (ja) * 2009-03-30 2010-10-21 Showa Denko Kk 半導体発光素子、電極構造、半導体発光素子の製造方法、電極構造の製造方法
US8829555B2 (en) * 2008-12-15 2014-09-09 Toyoda Gosei Co., Ltd. Semiconductor light emission element
KR101072034B1 (ko) * 2009-10-15 2011-10-10 엘지이노텍 주식회사 반도체 발광소자 및 그 제조방법
CN103003966B (zh) * 2010-05-18 2016-08-10 首尔半导体株式会社 具有波长变换层的发光二级管芯片及其制造方法，以及包括其的封装件及其制造方法
JP2012028749A (ja) * 2010-07-22 2012-02-09 Seoul Opto Devices Co Ltd 発光ダイオード
KR101746004B1 (ko) * 2010-10-29 2017-06-27 엘지이노텍 주식회사 발광소자
KR20120053571A (ko) * 2010-11-18 2012-05-29 서울옵토디바이스주식회사 복수의 메사 구조체를 갖는 발광 다이오드 칩
JP2012151441A (ja) * 2010-12-28 2012-08-09 Ricoh Co Ltd 光デバイス、光走査装置及び画像形成装置
TWM409542U (en) 2011-02-01 2011-08-11 Epistar Corp A light-emitting device
JP2012227383A (ja) * 2011-04-20 2012-11-15 Showa Denko Kk 半導体発光素子、電極構造および発光装置
TWI555226B (zh) * 2011-07-12 2016-10-21 晶元光電股份有限公司 具有多層發光疊層的發光元件

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5744828A (en) * 1995-07-13 1998-04-28 Kabushiki Kaisha Toshiba Semiconductor light emitting device with blocking layer
TW201104922A (en) * 2009-05-14 2011-02-01 Showa Denko Kk Semiconductor light emitting element, manufacturing method thereof, lamp, lighting equipment, electronic equipment, mechanical equipment and electrode
CN102169934A (zh) * 2010-02-26 2011-08-31 三星Led株式会社 具有多单元阵列的半导体发光装置及其制造方法
WO2012067311A1 (en) * 2010-11-18 2012-05-24 Seoul Opto Device Co., Ltd. Light emitting diode chip having electrode pad

Also Published As

Publication number Publication date
KR20140057968A (ko) 2014-05-14
JP2014093532A (ja) 2014-05-19
EP2728632A3 (en) 2014-07-09
EP2728632A2 (en) 2014-05-07
KR102087933B1 (ko) 2020-04-14
CN103811597A (zh) 2014-05-21
US20160093667A1 (en) 2016-03-31
US20140124730A1 (en) 2014-05-08
US9640583B2 (en) 2017-05-02
US9236526B2 (en) 2016-01-12
EP2728632B1 (en) 2021-12-15

Similar Documents

Publication Publication Date Title
CN103811597B (zh) 发光器件和发光器件阵列
US9735199B2 (en) Light emitting device
CN103094435B (zh) 发光器件及发光器件封装
US9240433B2 (en) Light emitting device
US9153622B2 (en) Series of light emitting regions with an intermediate pad
KR101799451B1 (ko) 발광 소자
US9837577B2 (en) Light emitting device
CN102194974B (zh) 发光器件及其制造方法、发光器件封装以及照明系统
CN103178185B (zh) 发光器件

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant
TR01 Transfer of patent right

Effective date of registration: 20210818

Address after: 168 Changsheng North Road, Taicang City, Suzhou City, Jiangsu Province

Patentee after: Suzhou Leyu Semiconductor Co.,Ltd.

Address before: Seoul, South Kerean

Patentee before: LG INNOTEK Co.,Ltd.

TR01 Transfer of patent right
CP03 Change of name, title or address

Address after: 215499 No. 168, Changsheng North Road, Taicang City, Suzhou City, Jiangsu Province

Patentee after: Suzhou Liyu Semiconductor Co.,Ltd.

Country or region after: China

Address before: 168 Changsheng North Road, Taicang City, Suzhou City, Jiangsu Province

Patentee before: Suzhou Leyu Semiconductor Co.,Ltd.

Country or region before: China

CP03 Change of name, title or address