KR102079149B1 - Euv 마이크로리소그래피용 투영 렌즈, 필름 요소 및 필름 요소를 포함하는 투영 렌즈를 생산하는 방법 - Google Patents

Euv 마이크로리소그래피용 투영 렌즈, 필름 요소 및 필름 요소를 포함하는 투영 렌즈를 생산하는 방법 Download PDF

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KR102079149B1
KR102079149B1 KR1020147022045A KR20147022045A KR102079149B1 KR 102079149 B1 KR102079149 B1 KR 102079149B1 KR 1020147022045 A KR1020147022045 A KR 1020147022045A KR 20147022045 A KR20147022045 A KR 20147022045A KR 102079149 B1 KR102079149 B1 KR 102079149B1
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layer
film
projection lens
film element
projection
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KR20140130117A (ko
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보리스 빗트너
노르베르트 바브라
쏘냐 슈나이더
리카르다 슈나이더
헨드릭 바그너
크리스티앙 발트
루멘 일리에프
토마스 식케탄츠
토랄프 그루너
발터 파울스
홀거 슈밋트
마티아스 뢰쉬
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칼 짜이스 에스엠테 게엠베하
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70191—Optical correction elements, filters or phase plates for controlling intensity, wavelength, polarisation, phase or the like
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B17/00—Systems with reflecting surfaces, with or without refracting elements
    • G02B17/08—Catadioptric systems
    • G02B17/0892—Catadioptric systems specially adapted for the UV
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B17/00—Systems with reflecting surfaces, with or without refracting elements
    • G02B17/08—Catadioptric systems
    • G02B17/0896—Catadioptric systems with variable magnification or multiple imaging planes, including multispectral systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70233—Optical aspects of catoptric systems, i.e. comprising only reflective elements, e.g. extreme ultraviolet [EUV] projection systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70316—Details of optical elements, e.g. of Bragg reflectors, extreme ultraviolet [EUV] multilayer or bilayer mirrors or diffractive optical elements
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—HANDLING OF PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K1/00—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
    • G21K1/06—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating using diffraction, refraction or reflection, e.g. monochromators
    • G21K1/062—Devices having a multilayer structure
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49826—Assembling or joining

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Optics & Photonics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Lenses (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
KR1020147022045A 2012-02-10 2013-02-08 Euv 마이크로리소그래피용 투영 렌즈, 필름 요소 및 필름 요소를 포함하는 투영 렌즈를 생산하는 방법 Active KR102079149B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201261597510P 2012-02-10 2012-02-10
DE102012202057.8A DE102012202057B4 (de) 2012-02-10 2012-02-10 Projektionsobjektiv für EUV-Mikrolithographie, Folienelement und Verfahren zur Herstellung eines Projektionsobjektivs mit Folienelement
DE102012202057.8 2012-02-10
US61/597,510 2012-02-10
PCT/EP2013/000382 WO2013117343A1 (en) 2012-02-10 2013-02-08 Projection lens for euv microlithography, film element and method for producing a projection lens comprising a film element

Publications (2)

Publication Number Publication Date
KR20140130117A KR20140130117A (ko) 2014-11-07
KR102079149B1 true KR102079149B1 (ko) 2020-02-19

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KR1020147022045A Active KR102079149B1 (ko) 2012-02-10 2013-02-08 Euv 마이크로리소그래피용 투영 렌즈, 필름 요소 및 필름 요소를 포함하는 투영 렌즈를 생산하는 방법

Country Status (7)

Country Link
US (1) US10001631B2 (https=)
JP (1) JP6294835B2 (https=)
KR (1) KR102079149B1 (https=)
CN (1) CN104136999B (https=)
DE (1) DE102012202057B4 (https=)
TW (1) TWI606261B (https=)
WO (1) WO2013117343A1 (https=)

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WO2015185374A1 (de) 2014-06-06 2015-12-10 Carl Zeiss Smt Gmbh Optisches system einer mikrolithographischen projektionsbelichtungsanlage
DE102015207153A1 (de) 2015-04-20 2016-10-20 Carl Zeiss Smt Gmbh Wellenfrontkorrekturelement zur Verwendung in einem optischen System
TWI575299B (zh) 2015-05-08 2017-03-21 中強光電股份有限公司 照明系統以及投影裝置
DE102015209051B4 (de) * 2015-05-18 2018-08-30 Carl Zeiss Smt Gmbh Projektionsobjektiv mit Wellenfrontmanipulator sowie Projektionsbelichtungsverfahren und Projektionsbelichtungsanlage
DE102015209173B4 (de) * 2015-05-20 2018-11-08 Carl Zeiss Smt Gmbh Verfahren zum herstellen eines objektivs für eine lithographieanlage
JP6783801B2 (ja) 2015-05-20 2020-11-11 カール・ツァイス・エスエムティー・ゲーエムベーハー 結像光学系の測定方法及び測定配列
DE102015220588A1 (de) * 2015-10-22 2017-04-27 Carl Zeiss Smt Gmbh Messverfahren und Messanordnung für ein abbildendes optisches System
CN105022235B (zh) * 2015-07-15 2017-04-05 中国科学院长春光学精密机械与物理研究所 具有半波带结构的极紫外光源收集镜的制作方法
DE102015219671A1 (de) * 2015-10-12 2017-04-27 Carl Zeiss Smt Gmbh Optische Baugruppe, Projektionssystem, Metrologiesystem und EUV-Lithographieanlage
DE102015221209A1 (de) 2015-10-29 2017-05-04 Carl Zeiss Smt Gmbh Optische Baugruppe mit einem Schutzelement und optische Anordnung damit
DE102015221983A1 (de) * 2015-11-09 2017-05-11 Carl Zeiss Smt Gmbh Abbildende Optik zur Abbildung eines Objektfeldes in ein Bildfeld sowie Projektionsbelichtungsanlage mit einer derartigen abbildenden Optik
US10254640B2 (en) * 2016-02-16 2019-04-09 AGC Inc. Reflective element for mask blank and process for producing reflective element for mask blank
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DE102017202861A1 (de) 2017-02-22 2017-04-13 Carl Zeiss Smt Gmbh Projektionsbelichtungsanlage mit multifunktionalem Pellikel und Verfahren zur Herstellung der Projektionsbelichtungsanlage
DE102017203246A1 (de) 2017-02-28 2018-08-30 Carl Zeiss Smt Gmbh Verfahren zur Korrektur eines Spiegels für den Wellenlängenbereich von 5 nm bis 20 nm
DE102017211443A1 (de) 2017-07-05 2019-01-10 Carl Zeiss Smt Gmbh Metrologiesystem mit einer EUV-Optik
CN111095041B (zh) * 2017-09-20 2022-06-28 Asml荷兰有限公司 用于光刻设备的控制系统
DE102018201495A1 (de) * 2018-01-31 2019-01-10 Carl Zeiss Smt Gmbh Abbildendes optisches System für die Mikrolithographie
NL2021357A (en) * 2018-01-31 2018-08-16 Asml Netherlands Bv Two-dimensional diffraction grating
DE102019209575A1 (de) 2018-07-04 2020-01-09 Carl Zeiss Smt Gmbh Verfahren zum Verändern einer Oberflächenform mittels Teilchenbestrahlung
DE102018213690A1 (de) 2018-08-14 2019-08-01 Carl Zeiss Smt Gmbh Projektionsbelichtungsanlage und Projektionsbelichtungsverfahren für die EUV-Mikrolithographie
EP3629085A1 (en) * 2018-09-25 2020-04-01 ASML Netherlands B.V. Method and apparatus for measuring pupil shape
WO2020212019A1 (en) * 2019-04-17 2020-10-22 Asml Netherlands B.V. Contamination trap
DE102019212736A1 (de) * 2019-08-26 2021-03-04 Carl Zeiss Smt Gmbh Optisches Element zur Reflexion von EUV-Strahlung und EUV-Lithographiesystem
DE102020207566B4 (de) 2020-06-18 2023-02-16 Carl Zeiss Smt Gmbh Vorrichtung und Verfahren zur Charakterisierung einer Maske für die Mikrolithographie
DE102021204179A1 (de) 2021-04-27 2022-04-21 Carl Zeiss Smt Gmbh Verfahren zur Optimierung eines Metrologiesystems zur Vermessung einer Lithografiemaske sowie Metrologiesystem
DE102021211975A1 (de) * 2021-10-25 2023-04-27 Carl Zeiss Smt Gmbh Verfahren zur Nachbildung einer Ziel-Wellenfront eines abbildenden optischen Produktions-Systems sowie Metrologiesystem zur Durchführung des Verfahrens
DE102022100591B9 (de) 2022-01-12 2023-10-26 Carl Zeiss Smt Gmbh Optisches System, insbesondere zur Charakterisierung einer Maske für die Mikrolithographie, und Strahlteiler zur Verwendung in einem solchen optischen System
DE102022210352A1 (de) 2022-09-29 2024-04-04 Carl Zeiss Smt Gmbh EUV-Reflektometer und Messverfahren
DE102023115801A1 (de) 2023-06-16 2024-12-19 Carl Zeiss Smt Gmbh Verfahren zur Herstellung eines Projektionsobjektivs, Projektionsobjektiv, Projektionsbelichtungsanlage und Projektionsbelichtungsverfahren
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Publication number Publication date
US20170261730A9 (en) 2017-09-14
TWI606261B (zh) 2017-11-21
WO2013117343A1 (en) 2013-08-15
DE102012202057B4 (de) 2021-07-08
DE102012202057A1 (de) 2013-08-14
US10001631B2 (en) 2018-06-19
JP2015508231A (ja) 2015-03-16
CN104136999B (zh) 2017-07-28
KR20140130117A (ko) 2014-11-07
CN104136999A (zh) 2014-11-05
JP6294835B2 (ja) 2018-03-14
US20140347721A1 (en) 2014-11-27
TW201337324A (zh) 2013-09-16

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