JP6294835B2 - Ｅｕｖマイクロリソグラフィ用投影レンズ、フィルム素子及びフィルム素子を備える投影レンズの製造方法 - Google Patents

Ｅｕｖマイクロリソグラフィ用投影レンズ、フィルム素子及びフィルム素子を備える投影レンズの製造方法 Download PDF

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JP6294835B2
JP6294835B2 JP2014555979A JP2014555979A JP6294835B2 JP 6294835 B2 JP6294835 B2 JP 6294835B2 JP 2014555979 A JP2014555979 A JP 2014555979A JP 2014555979 A JP2014555979 A JP 2014555979A JP 6294835 B2 JP6294835 B2 JP 6294835B2
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Prior art keywords
layer
film
projection lens
film element
projection
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JP2015508231A (ja
JP2015508231A5 (https=
Inventor
ビトナー ボリス
ビトナー ボリス
ワブラ ノルベルト
ワブラ ノルベルト
シュナイダー ソニヤ
シュナイダー ソニヤ
シュナイダー リカルダ
シュナイダー リカルダ
ワーグナー ヘンドリク
ワーグナー ヘンドリク
ヴァルト クリスティアン
ヴァルト クリスティアン
イリエフ ルーメン
イリエフ ルーメン
シッケタンツ トーマス
シッケタンツ トーマス
グルーナー トラルフ
グルーナー トラルフ
パウルス ヴァルター
パウルス ヴァルター
ホルガー　シュミット
シュミット ホルガー
ロシェ マティアス
ロシェ マティアス
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カール・ツァイス・エスエムティー・ゲーエムベーハー
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70191—Optical correction elements, filters or phase plates for controlling intensity, wavelength, polarisation, phase or the like
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B17/00—Systems with reflecting surfaces, with or without refracting elements
    • G02B17/08—Catadioptric systems
    • G02B17/0892—Catadioptric systems specially adapted for the UV
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B17/00—Systems with reflecting surfaces, with or without refracting elements
    • G02B17/08—Catadioptric systems
    • G02B17/0896—Catadioptric systems with variable magnification or multiple imaging planes, including multispectral systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70233—Optical aspects of catoptric systems, i.e. comprising only reflective elements, e.g. extreme ultraviolet [EUV] projection systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70316—Details of optical elements, e.g. of Bragg reflectors, extreme ultraviolet [EUV] multilayer or bilayer mirrors or diffractive optical elements
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—HANDLING OF PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K1/00—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
    • G21K1/06—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating using diffraction, refraction or reflection, e.g. monochromators
    • G21K1/062—Devices having a multilayer structure
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49826—Assembling or joining

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Optics & Photonics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Lenses (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2014555979A 2012-02-10 2013-02-08 Ｅｕｖマイクロリソグラフィ用投影レンズ、フィルム素子及びフィルム素子を備える投影レンズの製造方法 Active JP6294835B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201261597510P 2012-02-10 2012-02-10
DE102012202057.8A DE102012202057B4 (de) 2012-02-10 2012-02-10 Projektionsobjektiv für EUV-Mikrolithographie, Folienelement und Verfahren zur Herstellung eines Projektionsobjektivs mit Folienelement
DE102012202057.8 2012-02-10
US61/597,510 2012-02-10
PCT/EP2013/000382 WO2013117343A1 (en) 2012-02-10 2013-02-08 Projection lens for euv microlithography, film element and method for producing a projection lens comprising a film element

Publications (3)

Publication Number Publication Date
JP2015508231A JP2015508231A (ja) 2015-03-16
JP2015508231A5 JP2015508231A5 (https=) 2016-03-24
JP6294835B2 true JP6294835B2 (ja) 2018-03-14

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JP2014555979A Active JP6294835B2 (ja) 2012-02-10 2013-02-08 Ｅｕｖマイクロリソグラフィ用投影レンズ、フィルム素子及びフィルム素子を備える投影レンズの製造方法

Country Status (7)

Country Link
US (1) US10001631B2 (https=)
JP (1) JP6294835B2 (https=)
KR (1) KR102079149B1 (https=)
CN (1) CN104136999B (https=)
DE (1) DE102012202057B4 (https=)
TW (1) TWI606261B (https=)
WO (1) WO2013117343A1 (https=)

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Also Published As

Publication number Publication date
US20170261730A9 (en) 2017-09-14
TWI606261B (zh) 2017-11-21
WO2013117343A1 (en) 2013-08-15
DE102012202057B4 (de) 2021-07-08
DE102012202057A1 (de) 2013-08-14
US10001631B2 (en) 2018-06-19
KR102079149B1 (ko) 2020-02-19
JP2015508231A (ja) 2015-03-16
CN104136999B (zh) 2017-07-28
KR20140130117A (ko) 2014-11-07
CN104136999A (zh) 2014-11-05
US20140347721A1 (en) 2014-11-27
TW201337324A (zh) 2013-09-16

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