KR102076885B1 - 검출 디바이스, 노광 디바이스 및 물품의 제조 방법 - Google Patents

검출 디바이스, 노광 디바이스 및 물품의 제조 방법 Download PDF

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Publication number
KR102076885B1
KR102076885B1 KR1020160172285A KR20160172285A KR102076885B1 KR 102076885 B1 KR102076885 B1 KR 102076885B1 KR 1020160172285 A KR1020160172285 A KR 1020160172285A KR 20160172285 A KR20160172285 A KR 20160172285A KR 102076885 B1 KR102076885 B1 KR 102076885B1
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KR
South Korea
Prior art keywords
light
polarization component
reflected light
detection
reflected
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KR1020160172285A
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English (en)
Korean (ko)
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KR20170077039A (ko
Inventor
고헤이 마에다
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캐논 가부시끼가이샤
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Publication of KR20170077039A publication Critical patent/KR20170077039A/ko
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Publication of KR102076885B1 publication Critical patent/KR102076885B1/ko

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70591—Testing optical components
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70191—Optical correction elements, filters or phase plates for controlling intensity, wavelength, polarisation, phase or the like
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70233—Optical aspects of catoptric systems, i.e. comprising only reflective elements, e.g. extreme ultraviolet [EUV] projection systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70275—Multiple projection paths, e.g. array of projection systems, microlens projection systems or tandem projection systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70308—Optical correction elements, filters or phase plates for manipulating imaging light, e.g. intensity, wavelength, polarisation, phase or image shift
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70316—Details of optical elements, e.g. of Bragg reflectors, extreme ultraviolet [EUV] multilayer or bilayer mirrors or diffractive optical elements
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/70508—Data handling in all parts of the microlithographic apparatus, e.g. handling pattern data for addressable masks or data transfer to or from different components within the exposure apparatus
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7088—Alignment mark detection, e.g. TTR, TTL, off-axis detection, array detector, video detection

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Length Measuring Devices By Optical Means (AREA)
KR1020160172285A 2015-12-25 2016-12-16 검출 디바이스, 노광 디바이스 및 물품의 제조 방법 KR102076885B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2015-253117 2015-12-25
JP2015253117A JP6682263B2 (ja) 2015-12-25 2015-12-25 検出装置、露光装置および物品の製造方法

Publications (2)

Publication Number Publication Date
KR20170077039A KR20170077039A (ko) 2017-07-05
KR102076885B1 true KR102076885B1 (ko) 2020-02-12

Family

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KR1020160172285A KR102076885B1 (ko) 2015-12-25 2016-12-16 검출 디바이스, 노광 디바이스 및 물품의 제조 방법

Country Status (4)

Country Link
JP (1) JP6682263B2 (zh)
KR (1) KR102076885B1 (zh)
CN (1) CN106919005B (zh)
TW (1) TWI624735B (zh)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6891066B2 (ja) * 2017-07-19 2021-06-18 株式会社ミツトヨ 光学式測定装置
JP2019032378A (ja) * 2017-08-04 2019-02-28 株式会社オーク製作所 基板位置検出装置、露光装置および基板位置検出方法
US11309202B2 (en) * 2020-01-30 2022-04-19 Kla Corporation Overlay metrology on bonded wafers

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004273828A (ja) 2003-03-10 2004-09-30 Nikon Corp 面位置検出方法、面位置検出装置、合焦装置、露光装置及びデバイスの製造方法
JP2009204512A (ja) 2008-02-28 2009-09-10 Canon Inc 表面形状計測装置、露光装置、露光方法及びデバイス製造方法
JP2011226939A (ja) 2010-04-21 2011-11-10 Hitachi High-Technologies Corp 基板検査方法及び装置

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JPH0922868A (ja) * 1995-07-06 1997-01-21 Canon Inc 投影露光装置及びそれを用いた半導体デバイスの製造方法
KR100242983B1 (ko) * 1996-10-28 2000-02-01 김영환 2중 반사를 이용한 오토포커싱시스템
JP4440688B2 (ja) * 2004-03-31 2010-03-24 Ｈｏｙａ株式会社 レーザ描画装置、レーザ描画方法及びフォトマスクの製造方法
US8149382B2 (en) * 2005-07-08 2012-04-03 Nikon Corporation Surface position detection apparatus, exposure apparatus, and exposure method
JP2009206373A (ja) * 2008-02-28 2009-09-10 Canon Inc 露光装置及びデバイス製造方法
EP2128701A1 (en) * 2008-05-30 2009-12-02 ASML Netherlands BV Method of determining defects in a substrate and apparatus for exposing a substrate in a lithographic process
JP5198980B2 (ja) * 2008-09-02 2013-05-15 株式会社モリテックス 光学異方性パラメータ測定方法及び測定装置
JP5905729B2 (ja) * 2011-10-26 2016-04-20 Dmg森精機株式会社 変位検出装置
JP6025346B2 (ja) * 2012-03-05 2016-11-16 キヤノン株式会社 検出装置、露光装置及びデバイスを製造する方法
CN103529650B (zh) * 2012-07-02 2016-01-20 上海微电子装备有限公司 一种高度测量装置及其测量方法
CN104635428B (zh) * 2013-11-14 2017-06-27 上海微电子装备有限公司 一种基于图像处理的调焦调平测量装置和方法
WO2015101461A2 (en) * 2013-12-30 2015-07-09 Asml Netherlands B.V. Method and apparatus for design of a metrology target
CN104849964B (zh) * 2014-02-14 2017-08-25 上海微电子装备（集团）股份有限公司 一种焦面测量装置及其测量方法
NL2013293A (en) * 2014-06-02 2016-03-31 Asml Netherlands Bv Method of designing metrology targets, substrates having metrology targets, method of measuring overlay, and device manufacturing method.

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004273828A (ja) 2003-03-10 2004-09-30 Nikon Corp 面位置検出方法、面位置検出装置、合焦装置、露光装置及びデバイスの製造方法
JP2009204512A (ja) 2008-02-28 2009-09-10 Canon Inc 表面形状計測装置、露光装置、露光方法及びデバイス製造方法
JP2011226939A (ja) 2010-04-21 2011-11-10 Hitachi High-Technologies Corp 基板検査方法及び装置

Also Published As

Publication number Publication date
JP6682263B2 (ja) 2020-04-15
JP2017116769A (ja) 2017-06-29
CN106919005B (zh) 2020-04-07
TWI624735B (zh) 2018-05-21
TW201734653A (zh) 2017-10-01
CN106919005A (zh) 2017-07-04
KR20170077039A (ko) 2017-07-05

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