JP2016211894A - 検出装置、計測装置、露光装置、物品の製造方法、および検出方法 - Google Patents
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- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/8806—Specially adapted optical and illumination features
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- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
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- G03F7/70—Microphotolithographic exposure; Apparatus therefor
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- G—PHYSICS
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- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
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- G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
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- G—PHYSICS
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- G01B11/00—Measuring arrangements characterised by the use of optical techniques
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- G—PHYSICS
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- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
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- G01N21/21—Polarisation-affecting properties
- G01N21/211—Ellipsometry
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- G02B13/00—Optical objectives specially designed for the purposes specified below
- G02B13/0095—Relay lenses or rod lenses
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/30—Polarising elements
- G02B5/3025—Polarisers, i.e. arrangements capable of producing a definite output polarisation state from an unpolarised input state
- G02B5/3066—Polarisers, i.e. arrangements capable of producing a definite output polarisation state from an unpolarised input state involving the reflection of light at a particular angle of incidence, e.g. Brewster's angle
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
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- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/7085—Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
- G03F9/7023—Aligning or positioning in direction perpendicular to substrate surface
- G03F9/7026—Focusing
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7073—Alignment marks and their environment
- G03F9/7084—Position of mark on substrate, i.e. position in (x, y, z) of mark, e.g. buried or resist covered mark, mark on rearside, at the substrate edge, in the circuit area, latent image mark, marks in plural levels
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- H—ELECTRICITY
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- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/22—Gases
- H01S3/223—Gases the active gas being polyatomic, i.e. containing two or more atoms
- H01S3/225—Gases the active gas being polyatomic, i.e. containing two or more atoms comprising an excimer or exciplex
- H01S3/2251—ArF, i.e. argon fluoride is comprised for lasing around 193 nm
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/22—Gases
- H01S3/223—Gases the active gas being polyatomic, i.e. containing two or more atoms
- H01S3/225—Gases the active gas being polyatomic, i.e. containing two or more atoms comprising an excimer or exciplex
- H01S3/2258—F2, i.e. molecular fluoride is comprised for lasing around 157 nm
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/21—Polarisation-affecting properties
- G01N21/211—Ellipsometry
- G01N2021/215—Brewster incidence arrangement
Abstract
【解決手段】屈折率が互いに異なる複数の層を有する基板に光を斜入射させ、前記基板で反射された光を用いて前記基板の高さを検出する検出装置であって、P偏光およびS偏光を含む光のうちS偏光を低減するための偏光子を有し、前記偏光子によりS偏光が低減された光を40度から55度の範囲内にある入射角度で前記基板に斜入射させる光学系を含む。
【選択図】図2
Description
本発明に係る第1実施形態の露光装置100について、図1を参照しながら説明する。図1は、第1実施形態の露光装置100を示す概略図である。露光装置100は、例えば、スリット光を用いて基板3を走査露光する露光装置であり、照明光学系5と、マスクステージ2と、投影光学系6と、基板ステージ4と、計測部14(計測装置)と、制御部17とを含みうる。制御部17は、例えばCPUやメモリなどを含み、露光装置100の各部を制御する(基板3の走査露光を制御する)。
本発明の実施形態に係る物品の製造方法は、例えば、半導体デバイス等の電子デバイスや微細構造を有する素子等の物品を製造するのに好適である。本実施形態の物品の製造方法は、基板に塗布された感光剤に上記の露光装置を用いて潜像パターンを形成する工程(基板を露光する工程)と、かかる工程で潜像パターンが形成された基板を現像する工程とを含む。更に、かかる製造方法は、他の周知の工程(酸化、成膜、蒸着、ドーピング、平坦化、エッチング、レジスト剥離、ダイシング、ボンディング、パッケージング等)を含む。本実施形態の物品の製造方法は、従来の方法に比べて、物品の性能・品質・生産性・生産コストの少なくとも1つにおいて有利である。
Claims (9)
- 屈折率が互いに異なる複数の層を有する基板に光を斜入射させ、前記基板で反射された光を用いて前記基板の高さを検出する検出装置であって、
P偏光およびS偏光を含む光のうちS偏光を低減するための偏光子を有し、前記偏光子によりS偏光が低減された光を40度から55度の範囲内にある入射角度で前記基板に斜入射させる光学系を含む、ことを特徴とする検出装置。 - 前記光学系は、前記複数の層のうち最上層とその下の層との界面で反射された光の強度に対する、当該最上層の表面で反射された光の強度の比率が17%以下になる入射角度で前記基板に光を斜入射させる、ことを特徴とする請求項1に記載の検出装置。
- 前記光学系は、44.5度から50.5度の範囲にある入射角度で前記基板に光を斜入射させる、ことを特徴とする請求項1又は2に記載の検出装置。
- 入射角度を変えるために前記光学系を駆動する駆動部と、
前記複数の層のうち最上層の屈折率と入射角度との関係を示す情報に基づいて、前記駆動部を制御する制御部と、
を更に含むことを特徴とする請求項1乃至3のうちいずれか1項に記載の検出装置。 - 基板に設けられたマークの位置を計測する計測装置であって、
前記マークを撮像する撮像部と、
前記基板を保持して移動可能なステージと、
請求項1乃至4のうちいずれか1項に記載の検出装置と、
前記撮像部により得られた画像に基づいて前記マークの位置を求める処理部と、
を含み、
前記処理部は、前記撮像部により前記マークを撮像する前に、前記検出装置による検出結果に基づいて、前記基板の高さが前記撮像部のフォーカス位置の許容範囲に収まるように前記ステージを制御する、ことを特徴とする計測装置。 - 基板を露光する露光装置であって、
前記基板にマスクのパターンを投影する投影光学系と、
請求項5に記載の計測装置と、
を含み、
前記計測装置の前記撮像部は、前記投影光学系を介さずに前記マークを撮像する、ことを特徴とする露光装置。 - 請求項6に記載の露光装置を用いて基板を露光する工程と、
前記工程で露光された前記基板を現像する工程と、
を含むことを特徴とする物品の製造方法。 - 屈折率が互いに異なる複数の層を有する基板に光を斜入射させ、前記基板で反射された光を用いて前記基板の高さを検出する検出方法であって、
P偏光およびS偏光を含む光のうちS偏光を低減するための偏光子によりS偏光が低減された光を40度から55度の範囲内にある入射角度で前記基板に斜入射させる、ことを特徴とする検出方法。 - 屈折率が互いに異なる複数の層を有する基板に光を斜入射させ、前記基板で反射された光を用いて前記基板の高さを検出する検出装置であって、
P偏光およびS偏光を含む光のうちS偏光を低減するための偏光子によりS偏光が低減された光を、ブリュースタ角度より10度±3度だけ小さい入射角度で前記基板に斜入射させる、ことを特徴とする検出方法。
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JP2015093518A JP6562699B2 (ja) | 2015-04-30 | 2015-04-30 | 検出装置、計測装置、リソグラフィ装置、物品の製造方法、および検出方法 |
EP16000707.6A EP3088957B1 (en) | 2015-04-30 | 2016-03-24 | Detection apparatus, measurement apparatus, lithography apparatus, and method of manufacturing article |
TW105110583A TWI610060B (zh) | 2015-04-30 | 2016-04-01 | 檢測設備、測量設備、微影設備及製造物品的方法 |
US15/099,774 US9869936B2 (en) | 2015-04-30 | 2016-04-15 | Detection apparatus, measurement apparatus, lithography apparatus, and method of manufacturing article |
KR1020160049077A KR102048741B1 (ko) | 2015-04-30 | 2016-04-22 | 검출 장치, 계측 장치, 노광 장치, 및 물품의 제조 방법 |
CN201610262881.3A CN106094442B (zh) | 2015-04-30 | 2016-04-26 | 检测装置、测量装置、光刻装置和制造物品的方法 |
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JP6864096B2 (ja) | 2016-12-19 | 2021-04-21 | エーエスエムエル ネザーランズ ビー.ブイ. | 計測センサ、リソグラフィ装置および内でのデバイス製造方法 |
JP6981170B2 (ja) * | 2017-10-20 | 2021-12-15 | 株式会社ニューフレアテクノロジー | 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法 |
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JPS63275912A (ja) * | 1987-05-08 | 1988-11-14 | Nikon Corp | 表面変位検出装置 |
JPH06235624A (ja) * | 1992-12-15 | 1994-08-23 | Hitachi Ltd | 透明シートの検査方法とその装置 |
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US4864123A (en) * | 1987-05-08 | 1989-09-05 | Nikon Corporation | Apparatus for detecting the level of an object surface |
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JP3139023B2 (ja) | 1991-01-30 | 2001-02-26 | 株式会社日立製作所 | 電子線装置及び電子線装置の焦点調整方法 |
JPH05182896A (ja) * | 1992-01-06 | 1993-07-23 | Canon Inc | 物体位置検出装置 |
US6594012B2 (en) * | 1996-07-05 | 2003-07-15 | Canon Kabushiki Kaisha | Exposure apparatus |
CN105549341A (zh) * | 2012-02-21 | 2016-05-04 | Asml荷兰有限公司 | 检查设备和方法 |
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Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
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JPS63275912A (ja) * | 1987-05-08 | 1988-11-14 | Nikon Corp | 表面変位検出装置 |
JPH06235624A (ja) * | 1992-12-15 | 1994-08-23 | Hitachi Ltd | 透明シートの検査方法とその装置 |
JPH0936030A (ja) * | 1995-07-20 | 1997-02-07 | Canon Inc | 位置検出装置及びそれを用いた半導体デバイスの製造方法 |
US20040000627A1 (en) * | 2002-06-28 | 2004-01-01 | Carl Zeiss Semiconductor Manufacturing Technologies Ag | Method for focus detection and an imaging system with a focus-detection system |
JP2009010196A (ja) * | 2007-06-28 | 2009-01-15 | Advanced Lcd Technologies Development Center Co Ltd | レーザー結晶化方法及び結晶化装置 |
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KR102048741B1 (ko) | 2019-11-26 |
CN106094442B (zh) | 2019-06-11 |
TWI610060B (zh) | 2018-01-01 |
US20160320710A1 (en) | 2016-11-03 |
JP6562699B2 (ja) | 2019-08-21 |
CN106094442A (zh) | 2016-11-09 |
TW201638553A (zh) | 2016-11-01 |
KR20160129728A (ko) | 2016-11-09 |
US9869936B2 (en) | 2018-01-16 |
EP3088957A3 (en) | 2017-02-22 |
EP3088957B1 (en) | 2020-11-25 |
EP3088957A2 (en) | 2016-11-02 |
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