KR102068366B1 - 보호 구조체를 포함하는 관형 타깃 - Google Patents

보호 구조체를 포함하는 관형 타깃 Download PDF

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Publication number
KR102068366B1
KR102068366B1 KR1020137026436A KR20137026436A KR102068366B1 KR 102068366 B1 KR102068366 B1 KR 102068366B1 KR 1020137026436 A KR1020137026436 A KR 1020137026436A KR 20137026436 A KR20137026436 A KR 20137026436A KR 102068366 B1 KR102068366 B1 KR 102068366B1
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South Korea
Prior art keywords
protective structure
tubular target
molybdenum
target
tubular
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Korean (ko)
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KR20140018274A (ko
Inventor
크리스티안 린케
만프레드 술릭
마르틴 카트라인
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플란제 에스이
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/342—Hollow targets
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3426—Material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3488—Constructional details of particle beam apparatus not otherwise provided for, e.g. arrangement, mounting, housing, environment; special provisions for cleaning or maintenance of the apparatus
    • H01J37/3491—Manufacturing of targets
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3488—Constructional details of particle beam apparatus not otherwise provided for, e.g. arrangement, mounting, housing, environment; special provisions for cleaning or maintenance of the apparatus
    • H01J37/3497—Temperature of target

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
KR1020137026436A 2011-04-08 2012-04-05 보호 구조체를 포함하는 관형 타깃 Active KR102068366B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
ATGM203/2011U AT12695U1 (de) 2011-04-08 2011-04-08 Rohrtarget mit schutzvorrichtung
ATGM203/2011 2011-04-08
PCT/AT2012/000094 WO2012135883A1 (de) 2011-04-08 2012-04-05 Rohrtarget mit schutzvorrichtung

Publications (2)

Publication Number Publication Date
KR20140018274A KR20140018274A (ko) 2014-02-12
KR102068366B1 true KR102068366B1 (ko) 2020-01-20

Family

ID=46968455

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020137026436A Active KR102068366B1 (ko) 2011-04-08 2012-04-05 보호 구조체를 포함하는 관형 타깃

Country Status (8)

Country Link
US (1) US10978279B2 (enExample)
EP (1) EP2694697B1 (enExample)
JP (1) JP6328550B2 (enExample)
KR (1) KR102068366B1 (enExample)
CN (2) CN103518002A (enExample)
AT (1) AT12695U1 (enExample)
TW (1) TWI568870B (enExample)
WO (1) WO2012135883A1 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9992917B2 (en) 2014-03-10 2018-06-05 Vulcan GMS 3-D printing method for producing tungsten-based shielding parts
CN105296944A (zh) * 2015-10-27 2016-02-03 有研亿金新材料有限公司 一种具有抗氧化镀层的靶材组件
TW201911853A (zh) * 2017-08-10 2019-03-16 聚晶半導體股份有限公司 雙攝像頭影像擷取裝置及其攝像方法
CN108517498B (zh) * 2018-04-17 2020-04-21 洛阳科威钨钼有限公司 一种用于磁控溅射的一体式管状钼靶材的制备方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000239839A (ja) * 1999-02-19 2000-09-05 Tadahiro Omi スパッタリング装置
JP2005520935A (ja) * 2002-03-22 2005-07-14 ヴルチンガー・ディーター 回転可能な管状カソード
WO2007049765A1 (ja) * 2005-10-27 2007-05-03 Mitsubishi Plastics, Inc. 燃料電池用セパレータ、該セパレータを用いた燃料電池及び該セパレータ調製用塗料組成物

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US2301559A (en) * 1938-10-21 1942-11-10 Hancock Mfg Company Door latch
US4719035A (en) 1984-01-27 1988-01-12 The United States Of America As Represented By The Secretary Of The Air Force Corrosion inhibitor formulation for molybdenum tungsten and other metals
JPH02301559A (ja) * 1989-05-15 1990-12-13 Kojundo Chem Lab Co Ltd 一体構造型スパッタリングターゲット
JPH0499270A (ja) * 1990-08-11 1992-03-31 Fujitsu Ltd スパッターターゲット及びスパッター成膜方法
JPH0539566A (ja) * 1991-02-19 1993-02-19 Mitsubishi Materials Corp スパツタリング用ターゲツト及びその製造方法
KR0163981B1 (ko) 1993-06-29 1999-01-15 사또오 아키오 필름제 액정셀 봉지용 수지조성물
JPH0817763A (ja) * 1994-06-28 1996-01-19 Riyouka Massey Kk スパッタリングターゲット
US6436252B1 (en) * 2000-04-07 2002-08-20 Surface Engineered Products Corp. Method and apparatus for magnetron sputtering
CN1281780C (zh) 2000-09-08 2006-10-25 旭硝子株式会社 圆筒状靶及其制造方法
JP2004123874A (ja) * 2002-10-01 2004-04-22 Nippon Steel Chem Co Ltd フィルム形成用樹脂組成物及びフィルム状接着剤
CN1538545A (zh) 2003-04-16 2004-10-20 刘奥宇 可控金属燃料电池
EP1766721B1 (en) * 2004-06-04 2011-08-17 Radiall USA, Inc. Circuit component and circuit component assembly for antenna circuit
US20050279630A1 (en) * 2004-06-16 2005-12-22 Dynamic Machine Works, Inc. Tubular sputtering targets and methods of flowforming the same
DE102005030484B4 (de) 2005-06-28 2007-11-15 Carl Freudenberg Kg Elastischer Vliesstoff, Verfahren zu dessen Herstellung und dessen Verwendung
EP1752556B1 (de) * 2005-08-02 2007-10-31 Applied Materials GmbH & Co. KG Rohrkathode für die Verwendung bei einem Sputterprozess
AT8697U1 (de) * 2005-10-14 2006-11-15 Plansee Se Rohrtarget
CN100511524C (zh) * 2005-12-29 2009-07-08 华晶科技股份有限公司 控制开关连接结构
DE102006003279B4 (de) 2006-01-23 2010-03-25 W.C. Heraeus Gmbh Sputtertarget mit hochschmelzender Phase
JP2007302981A (ja) * 2006-05-15 2007-11-22 Hitachi Metals Ltd 円筒型Ｍｏ合金スパッタリングターゲット材の製造方法
US20080127887A1 (en) * 2006-12-01 2008-06-05 Applied Materials, Inc. Vertically mounted rotary cathodes in sputtering system on elevated rails
US20080296352A1 (en) 2007-05-30 2008-12-04 Akihiro Hosokawa Bonding method for cylindrical target
CN101434818A (zh) * 2007-11-15 2009-05-20 郭东明 异氰酸酯改性水性聚合物防水涂料
CN101386719B (zh) * 2008-08-28 2010-12-08 冯守中 多功能涂料及其制备方法
US7785921B1 (en) * 2009-04-13 2010-08-31 Miasole Barrier for doped molybdenum targets
US20110014469A1 (en) * 2009-07-14 2011-01-20 Sakai Chemical Industry Co., Ltd. Magnesium oxide particle, method for producing it, exoergic filler, resin composition, exoergic grease and exoergic coating composition
US8449818B2 (en) * 2010-06-30 2013-05-28 H. C. Starck, Inc. Molybdenum containing targets
JP2012162759A (ja) * 2011-02-04 2012-08-30 Sumitomo Metal Mining Co Ltd 円筒形スパッタリングターゲット

Patent Citations (3)

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Publication number Priority date Publication date Assignee Title
JP2000239839A (ja) * 1999-02-19 2000-09-05 Tadahiro Omi スパッタリング装置
JP2005520935A (ja) * 2002-03-22 2005-07-14 ヴルチンガー・ディーター 回転可能な管状カソード
WO2007049765A1 (ja) * 2005-10-27 2007-05-03 Mitsubishi Plastics, Inc. 燃料電池用セパレータ、該セパレータを用いた燃料電池及び該セパレータ調製用塗料組成物

Also Published As

Publication number Publication date
EP2694697B1 (de) 2018-08-01
CN103518002A (zh) 2014-01-15
TW201245482A (en) 2012-11-16
TWI568870B (zh) 2017-02-01
US10978279B2 (en) 2021-04-13
EP2694697A1 (de) 2014-02-12
WO2012135883A1 (de) 2012-10-11
AT12695U1 (de) 2012-10-15
KR20140018274A (ko) 2014-02-12
JP2014514449A (ja) 2014-06-19
CN109609917A (zh) 2019-04-12
US20140027276A1 (en) 2014-01-30
JP6328550B2 (ja) 2018-05-23

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