TWI568870B - 包含保護裝置的管狀靶 - Google Patents
包含保護裝置的管狀靶 Download PDFInfo
- Publication number
- TWI568870B TWI568870B TW101106684A TW101106684A TWI568870B TW I568870 B TWI568870 B TW I568870B TW 101106684 A TW101106684 A TW 101106684A TW 101106684 A TW101106684 A TW 101106684A TW I568870 B TWI568870 B TW I568870B
- Authority
- TW
- Taiwan
- Prior art keywords
- tubular target
- protective device
- target
- tubular
- molybdenum
- Prior art date
Links
- 230000001681 protective effect Effects 0.000 title claims description 23
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 23
- 229910052750 molybdenum Inorganic materials 0.000 claims description 23
- 239000011733 molybdenum Substances 0.000 claims description 23
- 239000000463 material Substances 0.000 claims description 22
- 239000002826 coolant Substances 0.000 claims description 19
- 229920000642 polymer Polymers 0.000 claims description 15
- 238000000576 coating method Methods 0.000 claims description 13
- 239000010410 layer Substances 0.000 claims description 13
- 239000011248 coating agent Substances 0.000 claims description 12
- 229910001182 Mo alloy Inorganic materials 0.000 claims description 10
- 238000004519 manufacturing process Methods 0.000 claims description 9
- 239000000919 ceramic Substances 0.000 claims description 6
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 5
- 238000000034 method Methods 0.000 claims description 5
- -1 polyethylene Polymers 0.000 claims description 5
- 238000000889 atomisation Methods 0.000 claims description 4
- 239000000945 filler Substances 0.000 claims description 4
- 239000011521 glass Substances 0.000 claims description 4
- 150000002739 metals Chemical class 0.000 claims description 4
- 239000003822 epoxy resin Substances 0.000 claims description 3
- 229910002804 graphite Inorganic materials 0.000 claims description 3
- 239000010439 graphite Substances 0.000 claims description 3
- 229920000647 polyepoxide Polymers 0.000 claims description 3
- 229920000728 polyester Polymers 0.000 claims description 3
- 229920002635 polyurethane Polymers 0.000 claims description 3
- 239000004814 polyurethane Substances 0.000 claims description 3
- 239000004698 Polyethylene Substances 0.000 claims description 2
- 239000004743 Polypropylene Substances 0.000 claims description 2
- 229920001973 fluoroelastomer Polymers 0.000 claims description 2
- 239000012528 membrane Substances 0.000 claims description 2
- 229920000573 polyethylene Polymers 0.000 claims description 2
- 229920001155 polypropylene Polymers 0.000 claims description 2
- 229920000915 polyvinyl chloride Polymers 0.000 claims description 2
- 239000004800 polyvinyl chloride Substances 0.000 claims description 2
- 238000005507 spraying Methods 0.000 claims description 2
- 229920001567 vinyl ester resin Polymers 0.000 claims description 2
- 239000002356 single layer Substances 0.000 claims 1
- 239000010959 steel Substances 0.000 description 10
- 229910000831 Steel Inorganic materials 0.000 description 9
- 238000001816 cooling Methods 0.000 description 6
- 238000005260 corrosion Methods 0.000 description 6
- 230000007797 corrosion Effects 0.000 description 6
- 238000005488 sandblasting Methods 0.000 description 6
- 239000010949 copper Substances 0.000 description 5
- 238000005477 sputtering target Methods 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 239000000523 sample Substances 0.000 description 4
- 229910000851 Alloy steel Inorganic materials 0.000 description 3
- 230000001680 brushing effect Effects 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 230000017525 heat dissipation Effects 0.000 description 3
- 229910000679 solder Inorganic materials 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000002848 electrochemical method Methods 0.000 description 2
- 239000004519 grease Substances 0.000 description 2
- 239000003112 inhibitor Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- MEFBJEMVZONFCJ-UHFFFAOYSA-N molybdate Chemical compound [O-][Mo]([O-])(=O)=O MEFBJEMVZONFCJ-UHFFFAOYSA-N 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 238000005121 nitriding Methods 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000005554 pickling Methods 0.000 description 2
- 239000013077 target material Substances 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 239000002699 waste material Substances 0.000 description 2
- 229910001369 Brass Inorganic materials 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- 229910000846 In alloy Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 229920000180 alkyd Polymers 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000010951 brass Substances 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000010288 cold spraying Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000011231 conductive filler Substances 0.000 description 1
- 229910000365 copper sulfate Inorganic materials 0.000 description 1
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 238000005246 galvanizing Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000004922 lacquer Substances 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 150000001247 metal acetylides Chemical class 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000013021 overheating Methods 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 239000013074 reference sample Substances 0.000 description 1
- 229910001925 ruthenium oxide Inorganic materials 0.000 description 1
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000002893 slag Substances 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910000601 superalloy Inorganic materials 0.000 description 1
- 238000007751 thermal spraying Methods 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 1
- 238000005493 welding type Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3414—Targets
- H01J37/342—Hollow targets
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3414—Targets
- H01J37/3426—Material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3488—Constructional details of particle beam apparatus not otherwise provided for, e.g. arrangement, mounting, housing, environment; special provisions for cleaning or maintenance of the apparatus
- H01J37/3491—Manufacturing of targets
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3488—Constructional details of particle beam apparatus not otherwise provided for, e.g. arrangement, mounting, housing, environment; special provisions for cleaning or maintenance of the apparatus
- H01J37/3497—Temperature of target
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| ATGM203/2011U AT12695U1 (de) | 2011-04-08 | 2011-04-08 | Rohrtarget mit schutzvorrichtung |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201245482A TW201245482A (en) | 2012-11-16 |
| TWI568870B true TWI568870B (zh) | 2017-02-01 |
Family
ID=46968455
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW101106684A TWI568870B (zh) | 2011-04-08 | 2012-03-01 | 包含保護裝置的管狀靶 |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US10978279B2 (enExample) |
| EP (1) | EP2694697B1 (enExample) |
| JP (1) | JP6328550B2 (enExample) |
| KR (1) | KR102068366B1 (enExample) |
| CN (2) | CN103518002A (enExample) |
| AT (1) | AT12695U1 (enExample) |
| TW (1) | TWI568870B (enExample) |
| WO (1) | WO2012135883A1 (enExample) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9992917B2 (en) | 2014-03-10 | 2018-06-05 | Vulcan GMS | 3-D printing method for producing tungsten-based shielding parts |
| CN105296944A (zh) * | 2015-10-27 | 2016-02-03 | 有研亿金新材料有限公司 | 一种具有抗氧化镀层的靶材组件 |
| TW201911853A (zh) * | 2017-08-10 | 2019-03-16 | 聚晶半導體股份有限公司 | 雙攝像頭影像擷取裝置及其攝像方法 |
| CN108517498B (zh) * | 2018-04-17 | 2020-04-21 | 洛阳科威钨钼有限公司 | 一种用于磁控溅射的一体式管状钼靶材的制备方法 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2001077402A2 (en) * | 2000-04-07 | 2001-10-18 | Surface Engineered Products Corporation | Method and apparatus for magnetron sputtering |
Family Cites Families (29)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2301559A (en) * | 1938-10-21 | 1942-11-10 | Hancock Mfg Company | Door latch |
| US4719035A (en) | 1984-01-27 | 1988-01-12 | The United States Of America As Represented By The Secretary Of The Air Force | Corrosion inhibitor formulation for molybdenum tungsten and other metals |
| JPH02301559A (ja) * | 1989-05-15 | 1990-12-13 | Kojundo Chem Lab Co Ltd | 一体構造型スパッタリングターゲット |
| JPH0499270A (ja) * | 1990-08-11 | 1992-03-31 | Fujitsu Ltd | スパッターターゲット及びスパッター成膜方法 |
| JPH0539566A (ja) * | 1991-02-19 | 1993-02-19 | Mitsubishi Materials Corp | スパツタリング用ターゲツト及びその製造方法 |
| KR0163981B1 (ko) | 1993-06-29 | 1999-01-15 | 사또오 아키오 | 필름제 액정셀 봉지용 수지조성물 |
| JPH0817763A (ja) * | 1994-06-28 | 1996-01-19 | Riyouka Massey Kk | スパッタリングターゲット |
| JP3712553B2 (ja) * | 1999-02-19 | 2005-11-02 | 忠弘 大見 | スパッタリング装置 |
| CN1281780C (zh) | 2000-09-08 | 2006-10-25 | 旭硝子株式会社 | 圆筒状靶及其制造方法 |
| DE10213049A1 (de) * | 2002-03-22 | 2003-10-02 | Dieter Wurczinger | Drehbare Rohrkatode |
| JP2004123874A (ja) * | 2002-10-01 | 2004-04-22 | Nippon Steel Chem Co Ltd | フィルム形成用樹脂組成物及びフィルム状接着剤 |
| CN1538545A (zh) | 2003-04-16 | 2004-10-20 | 刘奥宇 | 可控金属燃料电池 |
| EP1766721B1 (en) * | 2004-06-04 | 2011-08-17 | Radiall USA, Inc. | Circuit component and circuit component assembly for antenna circuit |
| US20050279630A1 (en) * | 2004-06-16 | 2005-12-22 | Dynamic Machine Works, Inc. | Tubular sputtering targets and methods of flowforming the same |
| DE102005030484B4 (de) | 2005-06-28 | 2007-11-15 | Carl Freudenberg Kg | Elastischer Vliesstoff, Verfahren zu dessen Herstellung und dessen Verwendung |
| EP1752556B1 (de) * | 2005-08-02 | 2007-10-31 | Applied Materials GmbH & Co. KG | Rohrkathode für die Verwendung bei einem Sputterprozess |
| AT8697U1 (de) * | 2005-10-14 | 2006-11-15 | Plansee Se | Rohrtarget |
| WO2007049765A1 (ja) * | 2005-10-27 | 2007-05-03 | Mitsubishi Plastics, Inc. | 燃料電池用セパレータ、該セパレータを用いた燃料電池及び該セパレータ調製用塗料組成物 |
| CN100511524C (zh) * | 2005-12-29 | 2009-07-08 | 华晶科技股份有限公司 | 控制开关连接结构 |
| DE102006003279B4 (de) | 2006-01-23 | 2010-03-25 | W.C. Heraeus Gmbh | Sputtertarget mit hochschmelzender Phase |
| JP2007302981A (ja) * | 2006-05-15 | 2007-11-22 | Hitachi Metals Ltd | 円筒型Ｍｏ合金スパッタリングターゲット材の製造方法 |
| US20080127887A1 (en) * | 2006-12-01 | 2008-06-05 | Applied Materials, Inc. | Vertically mounted rotary cathodes in sputtering system on elevated rails |
| US20080296352A1 (en) | 2007-05-30 | 2008-12-04 | Akihiro Hosokawa | Bonding method for cylindrical target |
| CN101434818A (zh) * | 2007-11-15 | 2009-05-20 | 郭东明 | 异氰酸酯改性水性聚合物防水涂料 |
| CN101386719B (zh) * | 2008-08-28 | 2010-12-08 | 冯守中 | 多功能涂料及其制备方法 |
| US7785921B1 (en) * | 2009-04-13 | 2010-08-31 | Miasole | Barrier for doped molybdenum targets |
| US20110014469A1 (en) * | 2009-07-14 | 2011-01-20 | Sakai Chemical Industry Co., Ltd. | Magnesium oxide particle, method for producing it, exoergic filler, resin composition, exoergic grease and exoergic coating composition |
| US8449818B2 (en) * | 2010-06-30 | 2013-05-28 | H. C. Starck, Inc. | Molybdenum containing targets |
| JP2012162759A (ja) * | 2011-02-04 | 2012-08-30 | Sumitomo Metal Mining Co Ltd | 円筒形スパッタリングターゲット |
-
2011
- 2011-04-08 AT ATGM203/2011U patent/AT12695U1/de not_active IP Right Cessation
-
2012
- 2012-03-01 TW TW101106684A patent/TWI568870B/zh active
- 2012-04-05 KR KR1020137026436A patent/KR102068366B1/ko active Active
- 2012-04-05 WO PCT/AT2012/000094 patent/WO2012135883A1/de not_active Ceased
- 2012-04-05 JP JP2014502951A patent/JP6328550B2/ja active Active
- 2012-04-05 CN CN201280017348.0A patent/CN103518002A/zh active Pending
- 2012-04-05 EP EP12725603.0A patent/EP2694697B1/de active Active
- 2012-04-05 US US14/110,527 patent/US10978279B2/en active Active
- 2012-04-05 CN CN201811191898.XA patent/CN109609917A/zh active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2001077402A2 (en) * | 2000-04-07 | 2001-10-18 | Surface Engineered Products Corporation | Method and apparatus for magnetron sputtering |
Also Published As
| Publication number | Publication date |
|---|---|
| EP2694697B1 (de) | 2018-08-01 |
| CN103518002A (zh) | 2014-01-15 |
| TW201245482A (en) | 2012-11-16 |
| US10978279B2 (en) | 2021-04-13 |
| EP2694697A1 (de) | 2014-02-12 |
| WO2012135883A1 (de) | 2012-10-11 |
| AT12695U1 (de) | 2012-10-15 |
| KR20140018274A (ko) | 2014-02-12 |
| JP2014514449A (ja) | 2014-06-19 |
| CN109609917A (zh) | 2019-04-12 |
| KR102068366B1 (ko) | 2020-01-20 |
| US20140027276A1 (en) | 2014-01-30 |
| JP6328550B2 (ja) | 2018-05-23 |
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