KR102035584B1 - 정전 척 및 반도체 제조 장치 - Google Patents
정전 척 및 반도체 제조 장치 Download PDFInfo
- Publication number
- KR102035584B1 KR102035584B1 KR1020140048657A KR20140048657A KR102035584B1 KR 102035584 B1 KR102035584 B1 KR 102035584B1 KR 1020140048657 A KR1020140048657 A KR 1020140048657A KR 20140048657 A KR20140048657 A KR 20140048657A KR 102035584 B1 KR102035584 B1 KR 102035584B1
- Authority
- KR
- South Korea
- Prior art keywords
- electrostatic chuck
- wafer
- electrostatic
- oxide
- mounting table
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000004065 semiconductor Substances 0.000 title claims description 22
- 238000004519 manufacturing process Methods 0.000 title claims description 11
- 239000000919 ceramic Substances 0.000 claims abstract description 43
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 claims abstract description 32
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims abstract description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 12
- 238000000034 method Methods 0.000 claims description 8
- 239000000395 magnesium oxide Substances 0.000 claims description 7
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims description 7
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 claims description 7
- 235000012239 silicon dioxide Nutrition 0.000 claims description 7
- ODINCKMPIJJUCX-UHFFFAOYSA-N calcium oxide Inorganic materials [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 claims description 6
- BRPQOXSCLDDYGP-UHFFFAOYSA-N calcium oxide Chemical compound [O-2].[Ca+2] BRPQOXSCLDDYGP-UHFFFAOYSA-N 0.000 claims description 5
- 239000000292 calcium oxide Substances 0.000 claims description 5
- 239000000377 silicon dioxide Substances 0.000 claims description 5
- 238000010438 heat treatment Methods 0.000 abstract description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 14
- 229910052710 silicon Inorganic materials 0.000 description 14
- 239000010703 silicon Substances 0.000 description 14
- 229910052782 aluminium Inorganic materials 0.000 description 12
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 12
- 238000001312 dry etching Methods 0.000 description 9
- 239000007789 gas Substances 0.000 description 7
- 238000005530 etching Methods 0.000 description 6
- 230000007423 decrease Effects 0.000 description 5
- 239000010410 layer Substances 0.000 description 5
- 238000012986 modification Methods 0.000 description 5
- 230000004048 modification Effects 0.000 description 5
- 238000001179 sorption measurement Methods 0.000 description 4
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 3
- 239000011261 inert gas Substances 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 229910010293 ceramic material Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- ORTQZVOHEJQUHG-UHFFFAOYSA-L copper(II) chloride Chemical compound Cl[Cu]Cl ORTQZVOHEJQUHG-UHFFFAOYSA-L 0.000 description 1
- 238000003795 desorption Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000009191 jumping Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013099269A JP6088346B2 (ja) | 2013-05-09 | 2013-05-09 | 静電チャック及び半導体製造装置 |
| JPJP-P-2013-099269 | 2013-05-09 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20140133436A KR20140133436A (ko) | 2014-11-19 |
| KR102035584B1 true KR102035584B1 (ko) | 2019-10-24 |
Family
ID=51864613
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020140048657A Active KR102035584B1 (ko) | 2013-05-09 | 2014-04-23 | 정전 척 및 반도체 제조 장치 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US9418884B2 (enExample) |
| JP (1) | JP6088346B2 (enExample) |
| KR (1) | KR102035584B1 (enExample) |
| TW (1) | TWI623056B (enExample) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9853579B2 (en) * | 2013-12-18 | 2017-12-26 | Applied Materials, Inc. | Rotatable heated electrostatic chuck |
| JP2017103389A (ja) * | 2015-12-03 | 2017-06-08 | 新光電気工業株式会社 | 静電チャック及び半導体製造装置 |
| JP6531693B2 (ja) * | 2016-03-30 | 2019-06-19 | 住友大阪セメント株式会社 | 静電チャック装置、静電チャック装置の製造方法 |
| JP6858035B2 (ja) * | 2017-02-27 | 2021-04-14 | 新光電気工業株式会社 | 基板固定具及び基板固定装置 |
| JP6830030B2 (ja) * | 2017-04-27 | 2021-02-17 | 新光電気工業株式会社 | 静電チャック及び基板固定装置 |
| US11289355B2 (en) | 2017-06-02 | 2022-03-29 | Lam Research Corporation | Electrostatic chuck for use in semiconductor processing |
| JP7378210B2 (ja) * | 2019-01-17 | 2023-11-13 | 新光電気工業株式会社 | セラミック部材の製造方法 |
| KR20230096465A (ko) | 2021-12-23 | 2023-06-30 | 주식회사 미코세라믹스 | 세라믹 서셉터의 제조 방법 |
| JP7194306B1 (ja) | 2022-07-27 | 2022-12-21 | 黒崎播磨株式会社 | アルミナ焼結体及び静電チャック |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002231796A (ja) | 2001-01-30 | 2002-08-16 | Kyocera Corp | 静電チャック |
| JP2005104746A (ja) | 2003-09-29 | 2005-04-21 | Shinko Electric Ind Co Ltd | アルミナ質セラミック板及びその製造方法 |
| JP2011222793A (ja) | 2010-04-12 | 2011-11-04 | Sumitomo Electric Ind Ltd | 静電チャック |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4248833B2 (ja) * | 2002-09-12 | 2009-04-02 | 株式会社ソディック | セラミックス及びその製造方法 |
| US6982125B2 (en) * | 2002-12-23 | 2006-01-03 | Saint-Gobain Ceramics & Plastics, Inc. | ALN material and electrostatic chuck incorporating same |
| KR100918190B1 (ko) * | 2005-04-22 | 2009-09-22 | 주식회사 코미코 | 치밀질 질화알루미늄 소결체, 그 제조 방법 및 상기소결체를 이용한 반도체 제조용 부재 |
| JP5042886B2 (ja) | 2008-03-06 | 2012-10-03 | 太平洋セメント株式会社 | 静電チャック |
| JP5593299B2 (ja) * | 2011-11-25 | 2014-09-17 | 東京エレクトロン株式会社 | 接合装置、接合システム、接合方法、プログラム及びコンピュータ記憶媒体 |
-
2013
- 2013-05-09 JP JP2013099269A patent/JP6088346B2/ja active Active
-
2014
- 2014-04-08 US US14/247,603 patent/US9418884B2/en active Active
- 2014-04-09 TW TW103113016A patent/TWI623056B/zh active
- 2014-04-23 KR KR1020140048657A patent/KR102035584B1/ko active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002231796A (ja) | 2001-01-30 | 2002-08-16 | Kyocera Corp | 静電チャック |
| JP2005104746A (ja) | 2003-09-29 | 2005-04-21 | Shinko Electric Ind Co Ltd | アルミナ質セラミック板及びその製造方法 |
| JP2011222793A (ja) | 2010-04-12 | 2011-11-04 | Sumitomo Electric Ind Ltd | 静電チャック |
Also Published As
| Publication number | Publication date |
|---|---|
| US9418884B2 (en) | 2016-08-16 |
| TWI623056B (zh) | 2018-05-01 |
| JP2014220408A (ja) | 2014-11-20 |
| KR20140133436A (ko) | 2014-11-19 |
| US20140334059A1 (en) | 2014-11-13 |
| JP6088346B2 (ja) | 2017-03-01 |
| TW201501234A (zh) | 2015-01-01 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PA0109 | Patent application |
Patent event code: PA01091R01D Comment text: Patent Application Patent event date: 20140423 |
|
| PG1501 | Laying open of application | ||
| PA0201 | Request for examination |
Patent event code: PA02012R01D Patent event date: 20180412 Comment text: Request for Examination of Application Patent event code: PA02011R01I Patent event date: 20140423 Comment text: Patent Application |
|
| E902 | Notification of reason for refusal | ||
| PE0902 | Notice of grounds for rejection |
Comment text: Notification of reason for refusal Patent event date: 20190701 Patent event code: PE09021S01D |
|
| E701 | Decision to grant or registration of patent right | ||
| PE0701 | Decision of registration |
Patent event code: PE07011S01D Comment text: Decision to Grant Registration Patent event date: 20190903 |
|
| PR0701 | Registration of establishment |
Comment text: Registration of Establishment Patent event date: 20191017 Patent event code: PR07011E01D |
|
| PR1002 | Payment of registration fee |
Payment date: 20191018 End annual number: 3 Start annual number: 1 |
|
| PG1601 | Publication of registration | ||
| PR1001 | Payment of annual fee |
Payment date: 20220915 Start annual number: 4 End annual number: 4 |
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| PR1001 | Payment of annual fee |
Payment date: 20230918 Start annual number: 5 End annual number: 5 |
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| PR1001 | Payment of annual fee |
Payment date: 20240919 Start annual number: 6 End annual number: 6 |