TWI623056B - 靜電夾頭及半導體製造裝置 - Google Patents
靜電夾頭及半導體製造裝置 Download PDFInfo
- Publication number
- TWI623056B TWI623056B TW103113016A TW103113016A TWI623056B TW I623056 B TWI623056 B TW I623056B TW 103113016 A TW103113016 A TW 103113016A TW 103113016 A TW103113016 A TW 103113016A TW I623056 B TWI623056 B TW I623056B
- Authority
- TW
- Taiwan
- Prior art keywords
- electrostatic chuck
- ceramic
- content
- wafer
- electrostatic
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims description 19
- 238000004519 manufacturing process Methods 0.000 title claims description 10
- 239000000919 ceramic Substances 0.000 claims abstract description 48
- 229910000420 cerium oxide Inorganic materials 0.000 claims abstract description 31
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 claims abstract description 31
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims abstract description 7
- 229910052782 aluminium Inorganic materials 0.000 claims description 15
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 15
- 239000000395 magnesium oxide Substances 0.000 claims description 7
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims description 7
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 claims description 7
- ODINCKMPIJJUCX-UHFFFAOYSA-N calcium oxide Inorganic materials [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 claims description 6
- BRPQOXSCLDDYGP-UHFFFAOYSA-N calcium oxide Chemical compound [O-2].[Ca+2] BRPQOXSCLDDYGP-UHFFFAOYSA-N 0.000 claims description 5
- 239000000292 calcium oxide Substances 0.000 claims description 5
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 3
- 230000003647 oxidation Effects 0.000 claims 1
- 238000007254 oxidation reaction Methods 0.000 claims 1
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 11
- 238000001312 dry etching Methods 0.000 description 9
- 238000010438 heat treatment Methods 0.000 description 8
- 238000005530 etching Methods 0.000 description 6
- 239000010410 layer Substances 0.000 description 5
- 238000001179 sorption measurement Methods 0.000 description 5
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 229910052715 tantalum Inorganic materials 0.000 description 4
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 4
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 229910010293 ceramic material Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- ORTQZVOHEJQUHG-UHFFFAOYSA-L copper(II) chloride Chemical compound Cl[Cu]Cl ORTQZVOHEJQUHG-UHFFFAOYSA-L 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000008520 organization Effects 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013099269A JP6088346B2 (ja) | 2013-05-09 | 2013-05-09 | 静電チャック及び半導体製造装置 |
| JP2013-099269 | 2013-05-09 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201501234A TW201501234A (zh) | 2015-01-01 |
| TWI623056B true TWI623056B (zh) | 2018-05-01 |
Family
ID=51864613
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW103113016A TWI623056B (zh) | 2013-05-09 | 2014-04-09 | 靜電夾頭及半導體製造裝置 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US9418884B2 (enExample) |
| JP (1) | JP6088346B2 (enExample) |
| KR (1) | KR102035584B1 (enExample) |
| TW (1) | TWI623056B (enExample) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9853579B2 (en) * | 2013-12-18 | 2017-12-26 | Applied Materials, Inc. | Rotatable heated electrostatic chuck |
| JP2017103389A (ja) * | 2015-12-03 | 2017-06-08 | 新光電気工業株式会社 | 静電チャック及び半導体製造装置 |
| JP6531693B2 (ja) * | 2016-03-30 | 2019-06-19 | 住友大阪セメント株式会社 | 静電チャック装置、静電チャック装置の製造方法 |
| JP6858035B2 (ja) * | 2017-02-27 | 2021-04-14 | 新光電気工業株式会社 | 基板固定具及び基板固定装置 |
| JP6830030B2 (ja) * | 2017-04-27 | 2021-02-17 | 新光電気工業株式会社 | 静電チャック及び基板固定装置 |
| US11289355B2 (en) | 2017-06-02 | 2022-03-29 | Lam Research Corporation | Electrostatic chuck for use in semiconductor processing |
| JP7378210B2 (ja) * | 2019-01-17 | 2023-11-13 | 新光電気工業株式会社 | セラミック部材の製造方法 |
| KR20230096465A (ko) | 2021-12-23 | 2023-06-30 | 주식회사 미코세라믹스 | 세라믹 서셉터의 제조 방법 |
| JP7194306B1 (ja) * | 2022-07-27 | 2022-12-21 | 黒崎播磨株式会社 | アルミナ焼結体及び静電チャック |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002231796A (ja) * | 2001-01-30 | 2002-08-16 | Kyocera Corp | 静電チャック |
| US20040121192A1 (en) * | 2002-12-23 | 2004-06-24 | Lacourse Brian C | ALN material and electrostatic chuck incorporating same |
| US20040266606A1 (en) * | 2002-09-12 | 2004-12-30 | Sodick Co., Ltd. | Enhanced ceramic material for precision alignment mechanism |
| JP2005104746A (ja) * | 2003-09-29 | 2005-04-21 | Shinko Electric Ind Co Ltd | アルミナ質セラミック板及びその製造方法 |
| JP2011222793A (ja) * | 2010-04-12 | 2011-11-04 | Sumitomo Electric Ind Ltd | 静電チャック |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100918190B1 (ko) * | 2005-04-22 | 2009-09-22 | 주식회사 코미코 | 치밀질 질화알루미늄 소결체, 그 제조 방법 및 상기소결체를 이용한 반도체 제조용 부재 |
| JP5042886B2 (ja) | 2008-03-06 | 2012-10-03 | 太平洋セメント株式会社 | 静電チャック |
| JP5593299B2 (ja) * | 2011-11-25 | 2014-09-17 | 東京エレクトロン株式会社 | 接合装置、接合システム、接合方法、プログラム及びコンピュータ記憶媒体 |
-
2013
- 2013-05-09 JP JP2013099269A patent/JP6088346B2/ja active Active
-
2014
- 2014-04-08 US US14/247,603 patent/US9418884B2/en active Active
- 2014-04-09 TW TW103113016A patent/TWI623056B/zh active
- 2014-04-23 KR KR1020140048657A patent/KR102035584B1/ko active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002231796A (ja) * | 2001-01-30 | 2002-08-16 | Kyocera Corp | 静電チャック |
| US20040266606A1 (en) * | 2002-09-12 | 2004-12-30 | Sodick Co., Ltd. | Enhanced ceramic material for precision alignment mechanism |
| US20040121192A1 (en) * | 2002-12-23 | 2004-06-24 | Lacourse Brian C | ALN material and electrostatic chuck incorporating same |
| JP2005104746A (ja) * | 2003-09-29 | 2005-04-21 | Shinko Electric Ind Co Ltd | アルミナ質セラミック板及びその製造方法 |
| JP2011222793A (ja) * | 2010-04-12 | 2011-11-04 | Sumitomo Electric Ind Ltd | 静電チャック |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201501234A (zh) | 2015-01-01 |
| KR20140133436A (ko) | 2014-11-19 |
| JP2014220408A (ja) | 2014-11-20 |
| US20140334059A1 (en) | 2014-11-13 |
| KR102035584B1 (ko) | 2019-10-24 |
| US9418884B2 (en) | 2016-08-16 |
| JP6088346B2 (ja) | 2017-03-01 |
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