JP6830030B2 - 静電チャック及び基板固定装置 - Google Patents
静電チャック及び基板固定装置 Download PDFInfo
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- JP6830030B2 JP6830030B2 JP2017087910A JP2017087910A JP6830030B2 JP 6830030 B2 JP6830030 B2 JP 6830030B2 JP 2017087910 A JP2017087910 A JP 2017087910A JP 2017087910 A JP2017087910 A JP 2017087910A JP 6830030 B2 JP6830030 B2 JP 6830030B2
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- Prior art keywords
- insulating plate
- substrate
- cerium
- electrostatic chuck
- concentration
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
- H01J37/32724—Temperature
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
- H02N13/00—Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/332—Coating
- H01J2237/3321—CVD [Chemical Vapor Deposition]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Description
本願発明者は、絶縁板10にどのような結晶相が含まれるのかをXRD(X-ray diffraction)により調査した。
本願発明者は、絶縁板10における各元素の分布をSEM/EDX(Scanning Electron Microscope/Energy Dispersive X-ray Spectroscopy)法により調査した。
本願発明者は絶縁板10の体積抵抗率が温度によってどのように変化するのかを調査した。
基板Sに対してプラズマエッチングやCVD等のプロセスを終えた後は、各電極11、12(図2参照)への電圧の印加を停止することにより絶縁板10から基板Sを取り外すことになる。このとき、基板Sに対して速やかに次のプロセスを行うことができるようにするために、絶縁板10から基板Sを容易に取り外せるのが好ましい。
図7に示したように、セリウムは、温度上昇に伴う絶縁板10の体積抵抗率の低下を抑制するのに有効である。また、図9に示したように、絶縁板10から基板Sを外し易くするのにもセリウムは有効である。
上記した本実施形態では、図2に示したように、基板Sを加熱するためのヒータ13を絶縁板10に埋め込んだ。ヒータ13を設ける部位はこれに限定されず、以下のようにヒータ13を設けてよい。
Claims (5)
- アルミナ、及びセリウムが添加されたYAG(Yttrium Aluminum Garnet)のみからなり、かつ基板が載せられる絶縁板と、
前記絶縁板に埋め込まれ、前記基板を吸着する静電力を発生させる電極と、
を有し、
前記絶縁板の温度が150℃のとき、前記絶縁板の体積抵抗率は1×10 16 Ω・cmよりも大きいことを特徴とする静電チャック。 - 前記絶縁板は、前記アルミナの結晶と前記YAGの結晶のみからなることを特徴とする請求項1に記載の静電チャック。
- 前記セリウムの濃度は、0.4mol%以上0.8mol%以下であることを特徴とする請求項1又は2に記載の静電チャック。
- 前記アルミナの濃度は65wt%であり、前記YAGの濃度は35wt%であることを特徴とする請求項1乃至3のいずれか1項に記載の静電チャック。
- 導電性のベースプレートと、
前記ベースプレートの上に固定された請求項1乃至4のいずれか1項に記載の静電チャックとを備える基板固定装置。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017087910A JP6830030B2 (ja) | 2017-04-27 | 2017-04-27 | 静電チャック及び基板固定装置 |
US15/957,240 US10861732B2 (en) | 2017-04-27 | 2018-04-19 | Electrostatic chuck and substrate fixing device |
TW107113558A TWI762623B (zh) | 2017-04-27 | 2018-04-20 | 靜電夾盤及基板固定裝置 |
KR1020180046572A KR102453117B1 (ko) | 2017-04-27 | 2018-04-23 | 정전척 및 기판 고정 장치 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017087910A JP6830030B2 (ja) | 2017-04-27 | 2017-04-27 | 静電チャック及び基板固定装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2018186209A JP2018186209A (ja) | 2018-11-22 |
JP6830030B2 true JP6830030B2 (ja) | 2021-02-17 |
Family
ID=63917472
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2017087910A Active JP6830030B2 (ja) | 2017-04-27 | 2017-04-27 | 静電チャック及び基板固定装置 |
Country Status (4)
Country | Link |
---|---|
US (1) | US10861732B2 (ja) |
JP (1) | JP6830030B2 (ja) |
KR (1) | KR102453117B1 (ja) |
TW (1) | TWI762623B (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11380573B2 (en) * | 2020-06-04 | 2022-07-05 | Tokyo Electron Limited | Structure for automatic in-situ replacement of a part of an electrostatic chuck |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001148370A (ja) * | 1999-11-19 | 2001-05-29 | Kyocera Corp | 耐食・耐プラズマ性セラミック部材 |
JP3706488B2 (ja) * | 1998-11-27 | 2005-10-12 | 京セラ株式会社 | 耐食性セラミック部材 |
JP3046288B1 (ja) | 1998-12-28 | 2000-05-29 | 京セラ株式会社 | 半導体・液晶製造装置用部材 |
US6383964B1 (en) * | 1998-11-27 | 2002-05-07 | Kyocera Corporation | Ceramic member resistant to halogen-plasma corrosion |
JP4349952B2 (ja) * | 2004-03-24 | 2009-10-21 | 京セラ株式会社 | ウェハ支持部材とその製造方法 |
US7211216B2 (en) * | 2004-06-18 | 2007-05-01 | Ngk Insulators, Ltd. | Aluminum nitride ceramic, semiconductor manufacturing member, and manufacturing method for aluminum nitride ceramic |
JP5154871B2 (ja) * | 2006-09-13 | 2013-02-27 | 日本碍子株式会社 | 静電チャック及びその製造方法 |
US7968439B2 (en) * | 2008-02-06 | 2011-06-28 | Applied Materials, Inc. | Plasma immersion ion implantation method using a pure or nearly pure silicon seasoning layer on the chamber interior surfaces |
US9036326B2 (en) | 2008-04-30 | 2015-05-19 | Axcelis Technologies, Inc. | Gas bearing electrostatic chuck |
US9558980B2 (en) | 2008-04-30 | 2017-01-31 | Axcelis Technologies, Inc. | Vapor compression refrigeration chuck for ion implanters |
JP2010080951A (ja) * | 2008-08-29 | 2010-04-08 | Toto Ltd | 静電チャックおよびその製造方法 |
JP6034402B2 (ja) | 2012-11-29 | 2016-11-30 | 京セラ株式会社 | 静電チャック |
US8941969B2 (en) | 2012-12-21 | 2015-01-27 | Applied Materials, Inc. | Single-body electrostatic chuck |
JP2014138164A (ja) * | 2013-01-18 | 2014-07-28 | Sumitomo Osaka Cement Co Ltd | 静電チャック装置 |
JP6088346B2 (ja) * | 2013-05-09 | 2017-03-01 | 新光電気工業株式会社 | 静電チャック及び半導体製造装置 |
JP6155922B2 (ja) * | 2013-07-12 | 2017-07-05 | 住友大阪セメント株式会社 | 静電チャック装置 |
JP6394396B2 (ja) * | 2013-10-15 | 2018-09-26 | 住友大阪セメント株式会社 | 耐食性部材、静電チャック装置 |
CN104715994B (zh) * | 2013-12-13 | 2017-08-25 | 中微半导体设备(上海)有限公司 | 电感耦合型等离子体处理腔室及其抗腐蚀绝缘窗口及制造方法 |
CN105980331B (zh) * | 2014-03-10 | 2020-06-19 | 住友大阪水泥股份有限公司 | 电介质材料及静电卡盘装置 |
-
2017
- 2017-04-27 JP JP2017087910A patent/JP6830030B2/ja active Active
-
2018
- 2018-04-19 US US15/957,240 patent/US10861732B2/en active Active
- 2018-04-20 TW TW107113558A patent/TWI762623B/zh active
- 2018-04-23 KR KR1020180046572A patent/KR102453117B1/ko active IP Right Grant
Also Published As
Publication number | Publication date |
---|---|
US20180315634A1 (en) | 2018-11-01 |
KR20180120588A (ko) | 2018-11-06 |
JP2018186209A (ja) | 2018-11-22 |
US10861732B2 (en) | 2020-12-08 |
TWI762623B (zh) | 2022-05-01 |
KR102453117B1 (ko) | 2022-10-12 |
TW201843766A (zh) | 2018-12-16 |
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