KR102013152B9 - 신규 수지 및 이를 포함하는 포토레지스트 조성물 - Google Patents

신규 수지 및 이를 포함하는 포토레지스트 조성물

Info

Publication number
KR102013152B9
KR102013152B9 KR1020180139621A KR20180139621A KR102013152B9 KR 102013152 B9 KR102013152 B9 KR 102013152B9 KR 1020180139621 A KR1020180139621 A KR 1020180139621A KR 20180139621 A KR20180139621 A KR 20180139621A KR 102013152 B9 KR102013152 B9 KR 102013152B9
Authority
KR
South Korea
Prior art keywords
same
photoresist compositions
novel resins
resins
novel
Prior art date
Application number
KR1020180139621A
Other languages
English (en)
Other versions
KR20180124007A (ko
KR102013152B1 (ko
Inventor
콩 류
쳉-바이 수
스즈키 야스히로
Original Assignee
롬 앤드 하스 일렉트로닉 머트어리얼즈 엘엘씨
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 롬 앤드 하스 일렉트로닉 머트어리얼즈 엘엘씨 filed Critical 롬 앤드 하스 일렉트로닉 머트어리얼즈 엘엘씨
Publication of KR20180124007A publication Critical patent/KR20180124007A/ko
Application granted granted Critical
Publication of KR102013152B1 publication Critical patent/KR102013152B1/ko
Publication of KR102013152B9 publication Critical patent/KR102013152B9/ko

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0047—Photosensitive materials characterised by additives for obtaining a metallic or ceramic pattern, e.g. by firing

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Materials For Photolithography (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
KR1020180139621A 2009-05-20 2018-11-14 신규 수지 및 이를 포함하는 포토레지스트 조성물 KR102013152B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US21666009P 2009-05-20 2009-05-20
US61/216,660 2009-05-20
KR1020100047562A KR20100125198A (ko) 2009-05-20 2010-05-20 신규 수지 및 이를 포함하는 포토레지스트 조성물

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
KR1020100047562A Division KR20100125198A (ko) 2009-05-20 2010-05-20 신규 수지 및 이를 포함하는 포토레지스트 조성물

Publications (3)

Publication Number Publication Date
KR20180124007A KR20180124007A (ko) 2018-11-20
KR102013152B1 KR102013152B1 (ko) 2019-08-22
KR102013152B9 true KR102013152B9 (ko) 2023-08-16

Family

ID=42711661

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1020100047562A KR20100125198A (ko) 2009-05-20 2010-05-20 신규 수지 및 이를 포함하는 포토레지스트 조성물
KR1020180139621A KR102013152B1 (ko) 2009-05-20 2018-11-14 신규 수지 및 이를 포함하는 포토레지스트 조성물

Family Applications Before (1)

Application Number Title Priority Date Filing Date
KR1020100047562A KR20100125198A (ko) 2009-05-20 2010-05-20 신규 수지 및 이를 포함하는 포토레지스트 조성물

Country Status (6)

Country Link
US (1) US20110039206A1 (ko)
EP (1) EP2293143B1 (ko)
JP (3) JP5735220B2 (ko)
KR (2) KR20100125198A (ko)
CN (1) CN101950127B (ko)
TW (2) TWI516863B (ko)

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JP2011060655A (ja) * 2009-09-11 2011-03-24 Panasonic Corp リチウム電池
WO2013133230A1 (ja) * 2012-03-06 2013-09-12 Jsr株式会社 フォトレジスト組成物、レジストパターン形成方法、重合体及び化合物
JP6149656B2 (ja) * 2012-09-28 2017-06-21 Jsr株式会社 フォトレジスト組成物、レジストパターン形成方法、重合体及び化合物
JP6323460B2 (ja) 2013-09-26 2018-05-16 Jsr株式会社 感放射線性樹脂組成物及びレジストパターン形成方法
JP6342683B2 (ja) * 2014-03-20 2018-06-13 東京応化工業株式会社 化学増幅型ポジ型感光性樹脂組成物
TWI646397B (zh) * 2015-10-31 2019-01-01 南韓商羅門哈斯電子材料韓國公司 與外塗佈光致抗蝕劑一起使用的塗料組合物
JP6999351B2 (ja) * 2017-10-05 2022-01-18 東京応化工業株式会社 レジスト組成物、レジストパターン形成方法、高分子化合物及び化合物
KR20200031257A (ko) * 2018-09-14 2020-03-24 도오꾜오까고오교 가부시끼가이샤 레지스트 조성물 및 레지스트 패턴 형성 방법
US11829068B2 (en) 2020-10-19 2023-11-28 Tokyo Ohka Kogyo Co., Ltd. Resist composition, method of forming resist pattern, compound, and resin

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JP3800318B2 (ja) * 2000-04-20 2006-07-26 信越化学工業株式会社 新規なエステル化合物、高分子化合物、レジスト材料、及びパターン形成方法
TW520357B (en) 2000-04-20 2003-02-11 Shinetsu Chemical Co Novel ester compounds, polymers, resist compositions and patterning process
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US6306554B1 (en) 2000-05-09 2001-10-23 Shipley Company, L.L.C. Polymers containing oxygen and sulfur alicyclic units and photoresist compositions comprising same
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JP2008083385A (ja) * 2006-09-27 2008-04-10 Fujifilm Corp 感光性組成物及びそれを用いたパターン形成方法
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KR101606010B1 (ko) * 2008-04-21 2016-03-24 스미또모 가가꾸 가부시키가이샤 중합체 및 이를 포함하는 화학 증폭형 레지스트 조성물
JP5136792B2 (ja) * 2008-11-21 2013-02-06 信越化学工業株式会社 ポジ型レジスト材料及びパターン形成方法
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Also Published As

Publication number Publication date
TW201341953A (zh) 2013-10-16
JP2011043794A (ja) 2011-03-03
EP2293143A2 (en) 2011-03-09
TW201107881A (en) 2011-03-01
CN101950127B (zh) 2013-07-24
JP2017223958A (ja) 2017-12-21
KR20100125198A (ko) 2010-11-30
EP2293143A3 (en) 2011-03-23
KR20180124007A (ko) 2018-11-20
KR102013152B1 (ko) 2019-08-22
US20110039206A1 (en) 2011-02-17
JP2015096620A (ja) 2015-05-21
CN101950127A (zh) 2011-01-19
TWI468857B (zh) 2015-01-11
JP6225126B2 (ja) 2017-11-01
JP5735220B2 (ja) 2015-06-17
TWI516863B (zh) 2016-01-11
EP2293143B1 (en) 2015-09-02

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A201 Request for examination
E902 Notification of reason for refusal
E701 Decision to grant or registration of patent right
G170 Re-publication after modification of scope of protection [patent]