KR102003077B1 - 도전성 산화물 및 그 제조 방법과 산화물 반도체막 - Google Patents

도전성 산화물 및 그 제조 방법과 산화물 반도체막 Download PDF

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KR102003077B1
KR102003077B1 KR1020137029873A KR20137029873A KR102003077B1 KR 102003077 B1 KR102003077 B1 KR 102003077B1 KR 1020137029873 A KR1020137029873 A KR 1020137029873A KR 20137029873 A KR20137029873 A KR 20137029873A KR 102003077 B1 KR102003077 B1 KR 102003077B1
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crystalline
powder
conductive oxide
mgo
semiconductor film
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KR1020137029873A
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Korean (ko)
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KR20140036176A (ko
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미키 미야나가
고이치 소가베
히데아키 아와타
히로시 오카다
마사시 요시무라
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스미토모덴키고교가부시키가이샤
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DE102013103679A1 (de) * 2013-04-11 2014-10-30 Heraeus Materials Technology Gmbh & Co. Kg Licht absorbierende Schicht und die Schicht enthaltendes Schichtsystem, Verfahren zur dessen Herstellung und dafür geeignetes Sputtertarget
CN108910936B (zh) * 2014-03-14 2021-01-12 大日精化工业株式会社 导热性复合氧化物、其制造方法、含导热性复合氧化物的组合物和其使用
EP2933825B1 (en) * 2014-03-31 2017-07-05 Flosfia Inc. Crystalline multilayer structure and semiconductor device
CN105063559A (zh) * 2015-08-17 2015-11-18 基迈克材料科技（苏州）有限公司 增强光电性能Zr元素掺杂AZO靶材
WO2018096992A1 (ja) * 2016-11-25 2018-05-31 宇部マテリアルズ株式会社 物理蒸着用ターゲット部材及びスパッタリングターゲット部材並びに物理蒸着膜及び層構造の製造方法
JP7387475B2 (ja) 2020-02-07 2023-11-28 キオクシア株式会社 半導体装置及び半導体記憶装置
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