KR101971827B1 - 진공 장치, 진공 시스템, 디바이스 제조 장치, 디바이스 제조 시스템 및 디바이스 제조 방법 - Google Patents

진공 장치, 진공 시스템, 디바이스 제조 장치, 디바이스 제조 시스템 및 디바이스 제조 방법 Download PDF

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Publication number
KR101971827B1
KR101971827B1 KR1020180044505A KR20180044505A KR101971827B1 KR 101971827 B1 KR101971827 B1 KR 101971827B1 KR 1020180044505 A KR1020180044505 A KR 1020180044505A KR 20180044505 A KR20180044505 A KR 20180044505A KR 101971827 B1 KR101971827 B1 KR 101971827B1
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KR
South Korea
Prior art keywords
pump
chamber
operating
pump operating
pumps
Prior art date
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KR1020180044505A
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English (en)
Korean (ko)
Inventor
야스노부 고바야시
Original Assignee
캐논 톡키 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
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Application filed by 캐논 톡키 가부시키가이샤 filed Critical 캐논 톡키 가부시키가이샤
Priority to KR1020180044505A priority Critical patent/KR101971827B1/ko
Priority to JP2018222234A priority patent/JP7012002B2/ja
Priority to CN201811571926.0A priority patent/CN110391151B/zh
Application granted granted Critical
Publication of KR101971827B1 publication Critical patent/KR101971827B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/042—Coating on selected surface areas, e.g. using masks using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L51/56—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Compressors, Vaccum Pumps And Other Relevant Systems (AREA)
  • Physical Vapour Deposition (AREA)
KR1020180044505A 2018-04-17 2018-04-17 진공 장치, 진공 시스템, 디바이스 제조 장치, 디바이스 제조 시스템 및 디바이스 제조 방법 KR101971827B1 (ko)

Priority Applications (3)

Application Number Priority Date Filing Date Title
KR1020180044505A KR101971827B1 (ko) 2018-04-17 2018-04-17 진공 장치, 진공 시스템, 디바이스 제조 장치, 디바이스 제조 시스템 및 디바이스 제조 방법
JP2018222234A JP7012002B2 (ja) 2018-04-17 2018-11-28 デバイス製造装置、及びデバイス製造システム
CN201811571926.0A CN110391151B (zh) 2018-04-17 2018-12-21 真空装置、真空系统、设备制造装置、设备制造系统以及设备的制造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020180044505A KR101971827B1 (ko) 2018-04-17 2018-04-17 진공 장치, 진공 시스템, 디바이스 제조 장치, 디바이스 제조 시스템 및 디바이스 제조 방법

Publications (1)

Publication Number Publication Date
KR101971827B1 true KR101971827B1 (ko) 2019-04-23

Family

ID=66285312

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020180044505A KR101971827B1 (ko) 2018-04-17 2018-04-17 진공 장치, 진공 시스템, 디바이스 제조 장치, 디바이스 제조 시스템 및 디바이스 제조 방법

Country Status (3)

Country Link
JP (1) JP7012002B2 (ja)
KR (1) KR101971827B1 (ja)
CN (1) CN110391151B (ja)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114561626B (zh) * 2022-02-18 2024-03-15 华虹半导体(无锡)有限公司 物理气相沉积装置及装置的降压方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000009036A (ja) * 1998-06-26 2000-01-11 Daikin Ind Ltd 真空ポンプの制御装置
JP2011043164A (ja) * 2008-09-30 2011-03-03 Canon Anelva Corp 真空排気システム
KR20120030945A (ko) * 2010-09-21 2012-03-29 스미도모쥬기가이고교 가부시키가이샤 크라이오펌프 시스템 및 그 제어방법
KR20170013326A (ko) * 2014-05-30 2017-02-06 가부시키가이샤 에바라 세이사꾸쇼 진공 배기 시스템

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7278831B2 (en) * 2003-12-31 2007-10-09 The Boc Group, Inc. Apparatus and method for control, pumping and abatement for vacuum process chambers
WO2010038416A1 (ja) * 2008-09-30 2010-04-08 キヤノンアネルバ株式会社 真空排気システム、基板処理装置、電子デバイスの製造方法、真空排気システムの運転方法
JP2010174779A (ja) * 2009-01-30 2010-08-12 Hitachi High-Technologies Corp 真空処理装置
JP5084794B2 (ja) * 2009-07-22 2012-11-28 住友重機械工業株式会社 クライオポンプ、及びクライオポンプの監視方法
JP5679910B2 (ja) * 2011-06-03 2015-03-04 住友重機械工業株式会社 クライオポンプ制御装置、クライオポンプシステム、及びクライオポンプの真空度保持判定方法
JP2013060853A (ja) * 2011-09-13 2013-04-04 Hitachi High-Technologies Corp 真空処理装置及び真空処理方法
JP5956754B2 (ja) * 2012-01-06 2016-07-27 株式会社荏原製作所 真空排気システム
JP5669893B2 (ja) * 2013-07-09 2015-02-18 住友重機械工業株式会社 クライオポンプ及びその製造方法
JP6522892B2 (ja) * 2014-05-30 2019-05-29 株式会社荏原製作所 真空排気システム
JP6363408B2 (ja) * 2014-06-23 2018-07-25 東京エレクトロン株式会社 成膜装置および成膜方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000009036A (ja) * 1998-06-26 2000-01-11 Daikin Ind Ltd 真空ポンプの制御装置
JP2011043164A (ja) * 2008-09-30 2011-03-03 Canon Anelva Corp 真空排気システム
KR20120030945A (ko) * 2010-09-21 2012-03-29 스미도모쥬기가이고교 가부시키가이샤 크라이오펌프 시스템 및 그 제어방법
KR20170013326A (ko) * 2014-05-30 2017-02-06 가부시키가이샤 에바라 세이사꾸쇼 진공 배기 시스템

Also Published As

Publication number Publication date
JP7012002B2 (ja) 2022-01-27
JP2019183828A (ja) 2019-10-24
CN110391151A (zh) 2019-10-29
CN110391151B (zh) 2023-09-12

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