KR101968592B1 - 통합된 컬러 ｌｅｄ 마이크로 디스플레이 - Google Patents

통합된 컬러 ｌｅｄ 마이크로 디스플레이 Download PDF

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KR101968592B1
KR101968592B1 KR1020177015032A KR20177015032A KR101968592B1 KR 101968592 B1 KR101968592 B1 KR 101968592B1 KR 1020177015032 A KR1020177015032 A KR 1020177015032A KR 20177015032 A KR20177015032 A KR 20177015032A KR 101968592 B1 KR101968592 B1 KR 101968592B1
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KR20170084139A (ko
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제임스 로날드 보나
가레쓰 존 발렌타인
스테픈 워렌 고튼
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페이스북 테크놀로지스, 엘엘씨
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    • H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
    • H10H29/142—Two-dimensional arrangements, e.g. asymmetric LED layout
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    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
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  • Condensed Matter Physics & Semiconductors (AREA)
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  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
KR1020177015032A 2014-11-18 2015-11-18 통합된 컬러 ｌｅｄ 마이크로 디스플레이 Expired - Fee Related KR101968592B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
GBGB1420452.3A GB201420452D0 (en) 2014-11-18 2014-11-18 Integrated colour led micro-display
GB1420452.3 2014-11-18
PCT/GB2015/053496 WO2016079505A1 (en) 2014-11-18 2015-11-18 Integrated colour led micro-display

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KR20170084139A KR20170084139A (ko) 2017-07-19
KR101968592B1 true KR101968592B1 (ko) 2019-04-12

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US (3) US10008645B2 (enExample)
EP (2) EP3955304B1 (enExample)
JP (1) JP6505226B2 (enExample)
KR (1) KR101968592B1 (enExample)
CN (2) CN112234076A (enExample)
GB (1) GB201420452D0 (enExample)
WO (1) WO2016079505A1 (enExample)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11127343B2 (en) 2019-02-25 2021-09-21 Samsung Display Co., Ltd. Display device and method of fabricating the same
US11538973B2 (en) 2019-06-21 2022-12-27 Samsung Display Co. Ltd. Display device and method of fabricating the same
US11552063B2 (en) 2019-11-12 2023-01-10 Samsung Display Co., Ltd. Display device with different electrodes and light emitting elements
US11600756B2 (en) 2019-08-22 2023-03-07 Samsung Display Co., Ltd. Display device with bank pattern
US11784177B2 (en) 2021-10-13 2023-10-10 Samsung Display Co., Ltd. Display device and method for fabricating the same
US12261254B2 (en) 2019-06-19 2025-03-25 Samsung Display Co., Ltd. Display device having a pixel circuit layer including a lens pattern
US12336350B2 (en) 2021-04-30 2025-06-17 Samsung Display Co., Ltd. High resolution display device with reduced current consumption and load
US12336338B2 (en) 2021-04-30 2025-06-17 Samsung Display Co., Ltd. Display device and method of manufacturing the same
US12446387B2 (en) 2021-04-30 2025-10-14 Samsung Display Co., Ltd. Display device and manufacturing method thereof
US12457837B2 (en) 2021-04-30 2025-10-28 Samsung Display Co., Ltd. Display device and manufacturing method thereof

Families Citing this family (130)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB201420452D0 (en) * 2014-11-18 2014-12-31 Mled Ltd Integrated colour led micro-display
US10304811B2 (en) * 2015-09-04 2019-05-28 Hong Kong Beida Jade Bird Display Limited Light-emitting diode display panel with micro lens array
KR102416470B1 (ko) * 2015-12-21 2022-07-04 엘지디스플레이 주식회사 광효율 향상을 위한 표시패널, 표시장치 및 표시패널을 제조하는 방법
CN112289821A (zh) * 2016-04-14 2021-01-29 群创光电股份有限公司 显示装置
US10134802B2 (en) * 2016-05-12 2018-11-20 Ostendo Technologies, Inc. Nanophosphors-converted quantum photonic imagers and methods for making the same
KR102617466B1 (ko) * 2016-07-18 2023-12-26 주식회사 루멘스 마이크로 led 어레이 디스플레이 장치
DE102016113763A1 (de) * 2016-07-26 2018-02-01 Endress+Hauser Conducta Gmbh+Co. Kg Sensoranordnung zum Einsatz in der Prozessautomatisierung
US10606121B2 (en) * 2016-09-12 2020-03-31 Seoul Semiconductor Co., Ltd. Display apparatus
CN106444250A (zh) * 2016-10-28 2017-02-22 江苏新广联半导体有限公司 3led微显示投影模块
US10353204B2 (en) 2016-10-31 2019-07-16 Tectus Corporation Femtoprojector optical systems
WO2018084919A1 (en) * 2016-11-04 2018-05-11 VerLASE TECHNOLOGIES LLC Color-converting structures and light-emitting structures and visual displays made therewith
US10790330B2 (en) 2016-11-24 2020-09-29 Lg Innotek Co., Ltd. Semiconductor device and display device comprising same
FR3061358B1 (fr) * 2016-12-27 2021-06-11 Aledia Procede de fabrication d’un dispositif optoelectronique comportant des plots photoluminescents de photoresine
JP7079940B2 (ja) 2017-01-13 2022-06-03 マサチューセッツ インスティテュート オブ テクノロジー ピクセル化ディスプレイ用多層構造体を形成する方法およびピクセル化ディスプレイ用多層構造体
DE102017100798A1 (de) 2017-01-17 2018-07-19 Osram Opto Semiconductors Gmbh Anzeigevorrichtung
CN109564963B (zh) * 2017-01-26 2021-04-16 株式会社Lg化学 微led和包括其的显示装置
US10903194B2 (en) 2017-04-24 2021-01-26 Hewlett-Packard Development Company, L.P. Micro light-emitting diode display with 3D orifice plating and light filtering
CN112510060B (zh) * 2017-06-02 2023-06-30 南京昀光科技有限公司 一种全彩半导体发光微显示器及其制造工艺
CN107230685A (zh) * 2017-06-02 2017-10-03 南京迈智芯微光电科技有限公司 一种全彩化的半导体发光微显示器及其制造工艺
KR102395993B1 (ko) * 2017-06-05 2022-05-11 삼성전자주식회사 디스플레이 장치
CN108987423B (zh) * 2017-06-05 2023-09-12 三星电子株式会社 显示装置
KR102399464B1 (ko) * 2017-06-27 2022-05-19 주식회사 루멘스 엘이디 패널
KR102455483B1 (ko) * 2017-06-30 2022-10-19 삼성전자주식회사 Led 장치 및 그 제조 방법
CN111247369A (zh) * 2017-08-24 2020-06-05 康宁公司 用于高动态范围微led背光的系统和方法
CN111108613B (zh) * 2017-09-13 2024-01-16 夏普株式会社 Led单元、图像显示元件及其制造方法
CN108323215B (zh) 2017-09-28 2020-10-30 歌尔股份有限公司 微发光二极管转移方法、制造方法和显示装置
US10768515B2 (en) 2017-12-12 2020-09-08 Tectus Corporation Method for manufacturing ultra-dense LED projector using thinned gallium nitride
US10388641B2 (en) 2017-10-19 2019-08-20 Tectus Corporation Ultra-dense LED projector
KR102486391B1 (ko) 2017-11-09 2023-01-09 삼성전자주식회사 고해상도 디스플레이 장치
KR102509639B1 (ko) 2017-12-12 2023-03-15 삼성전자주식회사 발광소자 패키지 제조방법
US11961875B2 (en) 2017-12-20 2024-04-16 Lumileds Llc Monolithic segmented LED array architecture with islanded epitaxial growth
US10854794B2 (en) * 2017-12-20 2020-12-01 Lumileds Llc Monolithic LED array structure
US20190198564A1 (en) * 2017-12-20 2019-06-27 Lumileds Llc Monolithic segmented led array architecture with islanded epitaxial growth
US10957820B2 (en) 2017-12-21 2021-03-23 Lumileds Llc Monolithic, segmented light emitting diode array
US20190198720A1 (en) * 2017-12-22 2019-06-27 Lumileds Llc Particle systems and patterning for monolithic led arrays
KR102521100B1 (ko) 2018-01-08 2023-04-14 삼성디스플레이 주식회사 표시 장치
US11404400B2 (en) 2018-01-24 2022-08-02 Apple Inc. Micro LED based display panel
TWI658446B (zh) * 2018-02-01 2019-05-01 鴻海精密工業股份有限公司 微型led觸控顯示面板
US10673414B2 (en) 2018-02-05 2020-06-02 Tectus Corporation Adaptive tuning of a contact lens
KR102493479B1 (ko) 2018-02-06 2023-02-01 삼성디스플레이 주식회사 표시 장치의 제조 방법
KR102136921B1 (ko) * 2018-03-02 2020-07-28 주식회사 루멘스 차량 외판 부착형 플렉시블 디스플레이 장치
US10503007B1 (en) 2018-02-27 2019-12-10 Facebook Technologies, Llc Directional color conversion using photonic crystals with quantum dots
US10529290B1 (en) * 2018-02-27 2020-01-07 Facebook Technologies, Llc Non-uniformly patterned photonic crystal structures with quantum dots for pixelated color conversion
CN110212064B (zh) 2018-02-28 2020-10-09 华为技术有限公司 一种发光二极管芯片及其制备方法
KR102521582B1 (ko) 2018-04-03 2023-04-12 삼성전자주식회사 발광 다이오드 디스플레이 장치
KR102022310B1 (ko) * 2018-04-04 2019-09-18 한국광기술원 능동소자 집적형 미세 led 칩 및 이에 대한 제조방법
KR102551354B1 (ko) * 2018-04-20 2023-07-04 삼성전자 주식회사 반도체 발광 소자 및 그 제조 방법
DE102018111417A1 (de) * 2018-05-14 2019-11-14 Osram Opto Semiconductors Gmbh Konversionselement, optoelektronisches bauteil, verfahren zur herstellung einer vielzahl von konversionselementen, verfahren zur herstellung einer vielzahl von optoelektronischen bauteilen und verfahren zur herstellung eines optoelektronischen bauteils
US10649239B2 (en) 2018-05-30 2020-05-12 Tectus Corporation Eyeglasses with embedded femtoprojectors
KR20190137458A (ko) 2018-06-01 2019-12-11 삼성전자주식회사 Led를 이용한 디스플레이 모듈 제조방법
CN108987446A (zh) * 2018-07-17 2018-12-11 南方科技大学 一种Micro-LED显示面板及其制造方法
KR102591768B1 (ko) 2018-07-17 2023-10-20 삼성디스플레이 주식회사 표시 장치
EP3608959B1 (en) * 2018-08-06 2023-11-15 Nichia Corporation Light emitting device and method for manufacturing same
TWI720339B (zh) * 2018-08-31 2021-03-01 東貝光電科技股份有限公司 應用於微型led顯示器之led發光模組及應用該led發光模組所製成之顯示器
WO2020049392A1 (ja) * 2018-09-05 2020-03-12 株式会社半導体エネルギー研究所 表示装置、表示モジュール、電子機器、及び表示装置の作製方法
KR102650659B1 (ko) 2018-09-13 2024-03-25 삼성전자주식회사 디스플레이 장치
CN109216590B (zh) * 2018-09-21 2020-11-03 福州大学 一种柔性彩色micro-LED显示器件制备方法
US20200135988A1 (en) 2018-10-26 2020-04-30 Tectus Corporation Methods of modifying the composition of material layers
CN109449259B (zh) * 2018-10-31 2020-07-10 海信视像科技股份有限公司 微型发光二极管灯板、其制作方法、背光模组及显示装置
KR102698293B1 (ko) 2018-11-27 2024-08-23 삼성전자주식회사 디스플레이 장치 및 제조 방법
KR102733562B1 (ko) 2018-12-03 2024-11-25 삼성전자주식회사 디스플레이 장치
US10991865B2 (en) 2018-12-20 2021-04-27 Samsung Display Co., Ltd. Display device
CN109860241B (zh) * 2018-12-29 2021-07-27 苏州清越光电科技股份有限公司 高分辨率Micro-OLED显示模组及其制备方法
JPWO2020157811A1 (ja) * 2019-01-28 2021-11-25 堺ディスプレイプロダクト株式会社 マイクロｌｅｄデバイスおよびその製造方法
KR102704782B1 (ko) 2019-02-08 2024-09-10 삼성디스플레이 주식회사 표시 장치
US11637219B2 (en) 2019-04-12 2023-04-25 Google Llc Monolithic integration of different light emitting structures on a same substrate
FR3095550B1 (fr) * 2019-04-26 2021-05-21 Commissariat Energie Atomique Procede de realisation d’un dispositif photo-emetteur et/ou photo-recepteur a grille de separation optique metallique
KR20200142685A (ko) * 2019-06-13 2020-12-23 삼성전자주식회사 마이크로 led 전사 방법 및 이에 의해 제조된 디스플레이 모듈
US11271032B2 (en) 2019-06-20 2022-03-08 Samsung Display Co., Ltd. Display device
KR102746084B1 (ko) 2019-07-08 2024-12-26 삼성전자주식회사 발광소자 패키지 및 이를 이용한 디스플레이 패널
WO2021051100A1 (en) 2019-09-13 2021-03-18 Avicenatech Corp. Optical interconnects using microleds
KR102739953B1 (ko) 2019-10-22 2024-12-06 삼성전자주식회사 마이크로 led 소자 및 그 제조 방법
US11121289B2 (en) 2019-11-20 2021-09-14 Tectus Corporation Ultra-dense quantum dot color converters
KR102877707B1 (ko) 2019-11-26 2025-10-29 삼성디스플레이 주식회사 표시패널 및 이의 제조 방법
US11674795B2 (en) 2019-12-18 2023-06-13 Lumileds Llc Miniature pattern projector using microLEDs and micro-optics
KR102856221B1 (ko) * 2019-12-19 2025-09-05 엘지디스플레이 주식회사 마이크로 엘이디 표시 장치 및 이의 제조방법
TWI725757B (zh) 2020-03-05 2021-04-21 財團法人工業技術研究院 子畫素結構、畫素結構以及應用於其的發光二極體晶粒
US11942507B2 (en) 2020-03-11 2024-03-26 Lumileds Llc Light emitting diode devices
US11569415B2 (en) 2020-03-11 2023-01-31 Lumileds Llc Light emitting diode devices with defined hard mask opening
US11735695B2 (en) 2020-03-11 2023-08-22 Lumileds Llc Light emitting diode devices with current spreading layer
US11848402B2 (en) 2020-03-11 2023-12-19 Lumileds Llc Light emitting diode devices with multilayer composite film including current spreading layer
KR20210137810A (ko) * 2020-05-11 2021-11-18 삼성전자주식회사 전자 소자, 이의 제조 방법, 및 이를 포함하는 표시 장치
WO2021231772A1 (en) 2020-05-15 2021-11-18 Lumileds Llc Light-emitting device with configurable spatial distribution of emission intensity
KR102787637B1 (ko) 2020-05-19 2025-03-27 삼성디스플레이 주식회사 표시 장치
GB2599065B (en) * 2020-05-22 2023-05-10 Plessey Semiconductors Ltd Light emitting device array
GB2595715B (en) * 2020-06-04 2022-08-17 Plessey Semiconductors Ltd Enhanced colour conversion and collimation of micro-LED devices
US11764095B2 (en) 2020-07-10 2023-09-19 Samsung Electronics Co., Ltd. Wet alignment method for micro-semiconductor chip and display transfer structure
KR102885870B1 (ko) 2020-09-08 2025-11-12 삼성전자주식회사 마이크로 발광 소자 및 이를 포함한 디스플레이 장치
US11901491B2 (en) 2020-10-29 2024-02-13 Lumileds Llc Light emitting diode devices
US11626538B2 (en) 2020-10-29 2023-04-11 Lumileds Llc Light emitting diode device with tunable emission
US12040432B2 (en) 2020-10-30 2024-07-16 Lumileds Llc Light emitting diode devices with patterned TCO layer including different thicknesses
KR20220062213A (ko) * 2020-11-06 2022-05-16 삼성디스플레이 주식회사 반도체 나노입자, 이를 포함한 전자 장치 및 상기 반도체 나노입자의 제조 방법
JP2023549801A (ja) * 2020-11-11 2023-11-29 アプライド マテリアルズ インコーポレイテッド ディスプレイフロントパネルデバイス
US11955583B2 (en) 2020-12-01 2024-04-09 Lumileds Llc Flip chip micro light emitting diodes
US11705534B2 (en) 2020-12-01 2023-07-18 Lumileds Llc Methods of making flip chip micro light emitting diodes
US11600656B2 (en) 2020-12-14 2023-03-07 Lumileds Llc Light emitting diode device
TW202226609A (zh) * 2020-12-21 2022-07-01 美商菲絲博克科技有限公司 用於微發光二極體的光束整形二次光學組件
DE102021101657B4 (de) 2021-01-26 2024-12-12 Infineon Technologies Ag Verfahren zur Herstellung eines hybriden Bauelements
CN112908196B (zh) * 2021-01-29 2023-12-19 厦门天马微电子有限公司 一种显示面板以及显示装置
DE102021106332A1 (de) 2021-03-16 2022-09-22 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronische baugruppe, displayanordnung und verfahren
US11721796B2 (en) 2021-03-29 2023-08-08 Tectus Corporation LED displays fabricated using hybrid bonding
US12453228B2 (en) 2021-04-30 2025-10-21 Samsung Display Co., Ltd. Display device and method of manufacturing the same
US12191340B2 (en) 2021-04-30 2025-01-07 Samsung Display Co., Ltd. Display device
US20220352247A1 (en) * 2021-04-30 2022-11-03 Samsung Display Co., Ltd. Display device and method of manufacturing the same
KR102788201B1 (ko) 2021-04-30 2025-03-28 삼성디스플레이 주식회사 표시 장치 및 그 제조 방법
KR102866873B1 (ko) 2021-04-30 2025-10-01 삼성디스플레이 주식회사 표시 장치 및 표시 장치의 제조 방법
US20220406764A1 (en) * 2021-05-14 2022-12-22 Seoul Viosys Co., Ltd. Light emiting module and display apparatus having the same
TWI799929B (zh) * 2021-07-29 2023-04-21 錼創顯示科技股份有限公司 微型發光二極體顯示裝置及其製造方法
KR102881169B1 (ko) 2021-08-10 2025-11-05 삼성디스플레이 주식회사 표시 장치와 그의 제조 방법
US20240355965A1 (en) * 2021-08-30 2024-10-24 Sony Group Corporation Light emitting device and image display apparatus
US12402440B2 (en) 2021-09-03 2025-08-26 Lumileds Llc Light emitting diode devices with bonding and/or ohmic contact-reflective material
US12484346B2 (en) 2021-09-03 2025-11-25 Lumileds Singapore Pte. Ltd. Light emitting diode devices with bonding and/or ohmic contact-reflective material
US12419137B2 (en) 2021-09-10 2025-09-16 Lumileds Llc Light emitting diodes with segmented anodes by pixel
US12433080B2 (en) 2021-09-29 2025-09-30 Lumileds Singapore Pte. Ltd. Hybrid CMOS micro-LED display layout
US12431478B2 (en) 2021-09-29 2025-09-30 Lumileds Singapore Pte. Ltd. Hybrid CMOS micro-LED display layout
US11935987B2 (en) 2021-11-03 2024-03-19 Lumileds Llc Light emitting diode arrays with a light-emitting pixel area
US12490570B2 (en) 2021-11-12 2025-12-02 Lumileds Singapore Pte. Ltd. Thin-film LED array with low refractive index patterned structures
KR102871988B1 (ko) 2021-12-23 2025-10-16 삼성전자주식회사 적층형 디스플레이 구동 집적 회로 및 이를 포함하는 디스플레이 장치
CN114361145A (zh) * 2021-12-31 2022-04-15 湖北长江新型显示产业创新中心有限公司 一种显示面板及其制造方法、一种显示装置
US12424599B2 (en) 2022-02-28 2025-09-23 The Hong Kong University Of Science And Technology Full-color light-emitting diode micro-display and the fabrication method thereof
EP4250379A1 (en) * 2022-03-24 2023-09-27 Micledi Microdisplays BV An optoelectronic device with color conversion and with conformal dbr and an associated fabrication method
WO2023180015A1 (en) * 2022-03-24 2023-09-28 Micledi Microdisplays Bv An optoelectronic device with color conversion and with conformal dbr and an associated fabrication method
EP4293734A4 (en) * 2022-04-29 2024-10-23 Fujian Prima Optoelectronics Co., Ltd Micro led light projection chip and method for manufacturing same
US20240413274A1 (en) * 2022-05-31 2024-12-12 Boe Technology Group Co., Ltd. Chip structure and manufacturing method therefor, display substrate and display device
JP2024070035A (ja) * 2022-11-10 2024-05-22 国立研究開発法人情報通信研究機構 半導体発光素子、半導体発光素子の製造方法、発光モジュール及び発光モジュールの製造方法
JP2024070034A (ja) * 2022-11-10 2024-05-22 国立研究開発法人情報通信研究機構 半導体発光素子及び発光モジュール
WO2024156371A1 (en) 2023-01-27 2024-08-02 Ams-Osram International Gmbh Optoelectronic device and method for manufacturing the same
FR3153690B1 (fr) * 2023-09-29 2025-08-29 Aledia Dispositif optoélectronique et procédé de fabrication
CN117525254A (zh) * 2023-12-20 2024-02-06 西安赛富乐斯半导体科技有限公司 Led发光构件及其构造方法
WO2025145254A1 (en) * 2024-01-04 2025-07-10 Vuereal Inc. Microdisplays

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120223875A1 (en) * 2009-12-09 2012-09-06 Nano And Advanced Materials Institute Limited Monolithic full-color led micro-display on an active matrix panel manufactured using flip-chip technology
JP2013011803A (ja) * 2011-06-30 2013-01-17 Oki Data Corp ディスプレイモジュール及びその製造方法と表示装置

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5661371A (en) * 1990-12-31 1997-08-26 Kopin Corporation Color filter system for light emitting display panels
US20050146258A1 (en) * 1999-06-02 2005-07-07 Shimon Weiss Electronic displays using optically pumped luminescent semiconductor nanocrystals
US6410942B1 (en) * 1999-12-03 2002-06-25 Cree Lighting Company Enhanced light extraction through the use of micro-LED arrays
CN1742391A (zh) * 2003-01-27 2006-03-01 3M创新有限公司 具有聚合物长通反射器的基于荧光粉的光源
ES2356606T3 (es) * 2003-08-08 2011-04-11 Kang, Sang-Kyu Microdiodo emisor de luz de nitruro con alto brillo y procedimiento de fabricación del mismo.
JP2008010298A (ja) * 2006-06-29 2008-01-17 Idemitsu Kosan Co Ltd 色変換基板及びカラー表示装置
TWI367465B (en) * 2008-02-15 2012-07-01 Foxsemicon Integrated Tech Inc Led display
JP2010040976A (ja) * 2008-08-08 2010-02-18 Sony Corp 発光素子及びこれを用いた照明装置並びに表示装置
JP2010087224A (ja) * 2008-09-30 2010-04-15 Toyoda Gosei Co Ltd Ｌｅｄ表示装置およびｌｅｄ表示装置用隔壁の製造方法
WO2010056596A2 (en) 2008-11-13 2010-05-20 3M Innovative Properties Company Electrically pixelated luminescent device incorporating optical elements
WO2010149027A1 (en) * 2009-06-22 2010-12-29 Industrial Technology Research Institute Light-emitting unit array, method for fabricating the same and projection apparatus
JP2011216668A (ja) * 2010-03-31 2011-10-27 Sony Corp 発光装置
CN102959708B (zh) * 2010-06-29 2016-05-04 柯立芝照明有限公司 具有易弯曲基板的电子装置
JPWO2014006987A1 (ja) * 2012-07-04 2016-06-02 シャープ株式会社 蛍光材料、蛍光塗料、蛍光体基板、電子機器およびｌｅｄパッケージ
KR101452768B1 (ko) 2012-08-21 2014-10-21 엘지전자 주식회사 반도체 발광 소자를 이용한 디스플레이 장치 및 이의 제조방법
KR101422037B1 (ko) * 2012-09-04 2014-07-23 엘지전자 주식회사 반도체 발광 소자를 이용한 디스플레이 장치
US9424775B2 (en) * 2012-10-15 2016-08-23 The Hong Kong University Of Science And Technology LEDoS projection system
US9153171B2 (en) * 2012-12-17 2015-10-06 LuxVue Technology Corporation Smart pixel lighting and display microcontroller
CN107155373B (zh) * 2014-06-18 2019-01-15 艾克斯瑟乐普林特有限公司 微组装led显示器
GB201420452D0 (en) * 2014-11-18 2014-12-31 Mled Ltd Integrated colour led micro-display
US10177127B2 (en) * 2015-09-04 2019-01-08 Hong Kong Beida Jade Bird Display Limited Semiconductor apparatus and method of manufacturing the same
US10700121B2 (en) * 2017-02-13 2020-06-30 Sct Ltd. Integrated multilayer monolithic assembly LED displays and method of making thereof
WO2019147738A1 (en) * 2018-01-23 2019-08-01 Light Share, LLC Full-color monolithic micro-led pixels

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120223875A1 (en) * 2009-12-09 2012-09-06 Nano And Advanced Materials Institute Limited Monolithic full-color led micro-display on an active matrix panel manufactured using flip-chip technology
JP2013011803A (ja) * 2011-06-30 2013-01-17 Oki Data Corp ディスプレイモジュール及びその製造方法と表示装置

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11514846B2 (en) 2019-02-25 2022-11-29 Samsung Display Co., Ltd. Display device and method of fabricating the same
US11817046B2 (en) 2019-02-25 2023-11-14 Samsung Display Co., Ltd. Display device and method of fabricating the same
US11127343B2 (en) 2019-02-25 2021-09-21 Samsung Display Co., Ltd. Display device and method of fabricating the same
US12223888B2 (en) 2019-02-25 2025-02-11 Samsung Display Co., Ltd. Display device and method of fabricating the same
US12261254B2 (en) 2019-06-19 2025-03-25 Samsung Display Co., Ltd. Display device having a pixel circuit layer including a lens pattern
US11538973B2 (en) 2019-06-21 2022-12-27 Samsung Display Co. Ltd. Display device and method of fabricating the same
US11990579B2 (en) 2019-06-21 2024-05-21 Samsung Display Co., Ltd. Display device and method of fabricating the same
US11600756B2 (en) 2019-08-22 2023-03-07 Samsung Display Co., Ltd. Display device with bank pattern
US12349526B2 (en) 2019-08-22 2025-07-01 Samsung Display Co., Ltd. Display device including bank pattern
US11552063B2 (en) 2019-11-12 2023-01-10 Samsung Display Co., Ltd. Display device with different electrodes and light emitting elements
US12336338B2 (en) 2021-04-30 2025-06-17 Samsung Display Co., Ltd. Display device and method of manufacturing the same
US12336350B2 (en) 2021-04-30 2025-06-17 Samsung Display Co., Ltd. High resolution display device with reduced current consumption and load
US12446387B2 (en) 2021-04-30 2025-10-14 Samsung Display Co., Ltd. Display device and manufacturing method thereof
US12457837B2 (en) 2021-04-30 2025-10-28 Samsung Display Co., Ltd. Display device and manufacturing method thereof
US12125838B2 (en) 2021-10-13 2024-10-22 Samsung Display Co., Ltd. Display device and method for fabricating the same
US11784177B2 (en) 2021-10-13 2023-10-10 Samsung Display Co., Ltd. Display device and method for fabricating the same

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