KR101968592B1 - 통합된 컬러 led 마이크로 디스플레이 - Google Patents
통합된 컬러 led 마이크로 디스플레이 Download PDFInfo
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- KR101968592B1 KR101968592B1 KR1020177015032A KR20177015032A KR101968592B1 KR 101968592 B1 KR101968592 B1 KR 101968592B1 KR 1020177015032 A KR1020177015032 A KR 1020177015032A KR 20177015032 A KR20177015032 A KR 20177015032A KR 101968592 B1 KR101968592 B1 KR 101968592B1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
- H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
- H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
- H10H29/142—Two-dimensional arrangements, e.g. asymmetric LED layout
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- H01L27/156—
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- H01L33/0079—
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- H01L33/505—
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
- H10H20/018—Bonding of wafers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
- H10H20/82—Roughened surfaces, e.g. at the interface between epitaxial layers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/822—Materials of the light-emitting regions
- H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
- H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/851—Wavelength conversion means
- H10H20/8514—Wavelength conversion means characterised by their shape, e.g. plate or foil
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/851—Wavelength conversion means
- H10H20/8515—Wavelength conversion means not being in contact with the bodies
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/855—Optical field-shaping means, e.g. lenses
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/855—Optical field-shaping means, e.g. lenses
- H10H20/856—Reflecting means
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/036—Manufacture or treatment of packages
- H10H20/0361—Manufacture or treatment of packages of wavelength conversion means
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/036—Manufacture or treatment of packages
- H10H20/0363—Manufacture or treatment of packages of optical field-shaping means
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/036—Manufacture or treatment of packages
- H10H20/0364—Manufacture or treatment of packages of interconnections
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/882—Scattering means
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Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB1420452.3 | 2014-11-18 | ||
| GBGB1420452.3A GB201420452D0 (en) | 2014-11-18 | 2014-11-18 | Integrated colour led micro-display |
| PCT/GB2015/053496 WO2016079505A1 (en) | 2014-11-18 | 2015-11-18 | Integrated colour led micro-display |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20170084139A KR20170084139A (ko) | 2017-07-19 |
| KR101968592B1 true KR101968592B1 (ko) | 2019-04-12 |
Family
ID=52248509
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020177015032A Expired - Fee Related KR101968592B1 (ko) | 2014-11-18 | 2015-11-18 | 통합된 컬러 led 마이크로 디스플레이 |
Country Status (7)
| Country | Link |
|---|---|
| US (3) | US10008645B2 (enExample) |
| EP (2) | EP3955304B1 (enExample) |
| JP (1) | JP6505226B2 (enExample) |
| KR (1) | KR101968592B1 (enExample) |
| CN (2) | CN107210315B (enExample) |
| GB (1) | GB201420452D0 (enExample) |
| WO (1) | WO2016079505A1 (enExample) |
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| US11127343B2 (en) | 2019-02-25 | 2021-09-21 | Samsung Display Co., Ltd. | Display device and method of fabricating the same |
| US11538973B2 (en) | 2019-06-21 | 2022-12-27 | Samsung Display Co. Ltd. | Display device and method of fabricating the same |
| US11552063B2 (en) | 2019-11-12 | 2023-01-10 | Samsung Display Co., Ltd. | Display device with different electrodes and light emitting elements |
| US11600756B2 (en) | 2019-08-22 | 2023-03-07 | Samsung Display Co., Ltd. | Display device with bank pattern |
| US11784177B2 (en) | 2021-10-13 | 2023-10-10 | Samsung Display Co., Ltd. | Display device and method for fabricating the same |
| US12261254B2 (en) | 2019-06-19 | 2025-03-25 | Samsung Display Co., Ltd. | Display device having a pixel circuit layer including a lens pattern |
| US12336338B2 (en) | 2021-04-30 | 2025-06-17 | Samsung Display Co., Ltd. | Display device and method of manufacturing the same |
| US12336350B2 (en) | 2021-04-30 | 2025-06-17 | Samsung Display Co., Ltd. | High resolution display device with reduced current consumption and load |
| US12446387B2 (en) | 2021-04-30 | 2025-10-14 | Samsung Display Co., Ltd. | Display device and manufacturing method thereof |
| US12457837B2 (en) | 2021-04-30 | 2025-10-28 | Samsung Display Co., Ltd. | Display device and manufacturing method thereof |
| US12532591B2 (en) | 2021-04-30 | 2026-01-20 | Samsung Display Co., Ltd. | Display device having partition wall structure that finely divides wavelength conversion portions |
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| GB201420452D0 (en) * | 2014-11-18 | 2014-12-31 | Mled Ltd | Integrated colour led micro-display |
| US10304811B2 (en) * | 2015-09-04 | 2019-05-28 | Hong Kong Beida Jade Bird Display Limited | Light-emitting diode display panel with micro lens array |
| KR102416470B1 (ko) * | 2015-12-21 | 2022-07-04 | 엘지디스플레이 주식회사 | 광효율 향상을 위한 표시패널, 표시장치 및 표시패널을 제조하는 방법 |
| CN112289821A (zh) * | 2016-04-14 | 2021-01-29 | 群创光电股份有限公司 | 显示装置 |
| US10134802B2 (en) * | 2016-05-12 | 2018-11-20 | Ostendo Technologies, Inc. | Nanophosphors-converted quantum photonic imagers and methods for making the same |
| KR102617466B1 (ko) * | 2016-07-18 | 2023-12-26 | 주식회사 루멘스 | 마이크로 led 어레이 디스플레이 장치 |
| DE102016113763A1 (de) * | 2016-07-26 | 2018-02-01 | Endress+Hauser Conducta Gmbh+Co. Kg | Sensoranordnung zum Einsatz in der Prozessautomatisierung |
| US10606121B2 (en) * | 2016-09-12 | 2020-03-31 | Seoul Semiconductor Co., Ltd. | Display apparatus |
| CN106444250A (zh) * | 2016-10-28 | 2017-02-22 | 江苏新广联半导体有限公司 | 3led微显示投影模块 |
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| WO2018084919A1 (en) * | 2016-11-04 | 2018-05-11 | VerLASE TECHNOLOGIES LLC | Color-converting structures and light-emitting structures and visual displays made therewith |
| EP3547376B1 (en) | 2016-11-24 | 2023-05-17 | Lg Innotek Co., Ltd. | Semiconductor device and display device comprising same |
| FR3061358B1 (fr) * | 2016-12-27 | 2021-06-11 | Aledia | Procede de fabrication d’un dispositif optoelectronique comportant des plots photoluminescents de photoresine |
| US10847553B2 (en) | 2017-01-13 | 2020-11-24 | Massachusetts Institute Of Technology | Method of forming a multilayer structure for a pixelated display and a multilayer structure for a pixelated display |
| DE102017100798A1 (de) * | 2017-01-17 | 2018-07-19 | Osram Opto Semiconductors Gmbh | Anzeigevorrichtung |
| KR101992342B1 (ko) * | 2017-01-26 | 2019-06-24 | 주식회사 엘지화학 | 마이크로 led 및 이를 포함하는 디스플레이 장치 |
| US10903194B2 (en) | 2017-04-24 | 2021-01-26 | Hewlett-Packard Development Company, L.P. | Micro light-emitting diode display with 3D orifice plating and light filtering |
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| KR102395993B1 (ko) * | 2017-06-05 | 2022-05-11 | 삼성전자주식회사 | 디스플레이 장치 |
| KR102399464B1 (ko) * | 2017-06-27 | 2022-05-19 | 주식회사 루멘스 | 엘이디 패널 |
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| WO2019040688A1 (en) * | 2017-08-24 | 2019-02-28 | Corning Incorporated | HIGH DYNAMIC RANGE MICRO-LED BACKLIGHT SYSTEMS AND METHODS |
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| KR102698293B1 (ko) | 2018-11-27 | 2024-08-23 | 삼성전자주식회사 | 디스플레이 장치 및 제조 방법 |
| KR102733562B1 (ko) | 2018-12-03 | 2024-11-25 | 삼성전자주식회사 | 디스플레이 장치 |
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| KR102704782B1 (ko) * | 2019-02-08 | 2024-09-10 | 삼성디스플레이 주식회사 | 표시 장치 |
| US11637219B2 (en) | 2019-04-12 | 2023-04-25 | Google Llc | Monolithic integration of different light emitting structures on a same substrate |
| FR3095550B1 (fr) * | 2019-04-26 | 2021-05-21 | Commissariat Energie Atomique | Procede de realisation d’un dispositif photo-emetteur et/ou photo-recepteur a grille de separation optique metallique |
| KR20200142685A (ko) | 2019-06-13 | 2020-12-23 | 삼성전자주식회사 | 마이크로 led 전사 방법 및 이에 의해 제조된 디스플레이 모듈 |
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Also Published As
| Publication number | Publication date |
|---|---|
| US10862010B2 (en) | 2020-12-08 |
| US20170309798A1 (en) | 2017-10-26 |
| US20200028036A1 (en) | 2020-01-23 |
| US20180261736A1 (en) | 2018-09-13 |
| WO2016079505A1 (en) | 2016-05-26 |
| CN107210315B (zh) | 2020-11-03 |
| JP2017538290A (ja) | 2017-12-21 |
| EP3955304B1 (en) | 2024-01-03 |
| EP3955304A1 (en) | 2022-02-16 |
| KR20170084139A (ko) | 2017-07-19 |
| EP3221890B1 (en) | 2022-01-12 |
| EP3221890A1 (en) | 2017-09-27 |
| JP6505226B2 (ja) | 2019-04-24 |
| US10367122B2 (en) | 2019-07-30 |
| CN107210315A (zh) | 2017-09-26 |
| GB201420452D0 (en) | 2014-12-31 |
| US10008645B2 (en) | 2018-06-26 |
| CN112234076A (zh) | 2021-01-15 |
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