JP6505226B2 - 集積型カラーｌｅｄマイクロディスプレイ - Google Patents

集積型カラーｌｅｄマイクロディスプレイ Download PDF

Info

Publication number
JP6505226B2
JP6505226B2 JP2017526124A JP2017526124A JP6505226B2 JP 6505226 B2 JP6505226 B2 JP 6505226B2 JP 2017526124 A JP2017526124 A JP 2017526124A JP 2017526124 A JP2017526124 A JP 2017526124A JP 6505226 B2 JP6505226 B2 JP 6505226B2
Authority
JP
Japan
Prior art keywords
layer
light
color
color converter
color conversion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2017526124A
Other languages
English (en)
Japanese (ja)
Other versions
JP2017538290A (ja
JP2017538290A5 (enExample
Inventor
ロナルド ボナー、ジェームズ
ロナルド ボナー、ジェームズ
ジョン バレンタイン、ガレス
ジョン バレンタイン、ガレス
ウォーレン ゴートン、スティーブン
ウォーレン ゴートン、スティーブン
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Meta Platforms Technologies LLC
Original Assignee
Facebook Technologies LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Facebook Technologies LLC filed Critical Facebook Technologies LLC
Publication of JP2017538290A publication Critical patent/JP2017538290A/ja
Publication of JP2017538290A5 publication Critical patent/JP2017538290A5/ja
Application granted granted Critical
Publication of JP6505226B2 publication Critical patent/JP6505226B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
    • H10H29/142—Two-dimensional arrangements, e.g. asymmetric LED layout
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/16—Assemblies consisting of a plurality of semiconductor or other solid state devices the devices being of types provided for in two or more different subclasses of H10B, H10D, H10F, H10H, H10K or H10N, e.g. forming hybrid circuits
    • H01L25/167—Assemblies consisting of a plurality of semiconductor or other solid state devices the devices being of types provided for in two or more different subclasses of H10B, H10D, H10F, H10H, H10K or H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/82—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8514—Wavelength conversion means characterised by their shape, e.g. plate or foil
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8515—Wavelength conversion means not being in contact with the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H10H20/856—Reflecting means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0361—Manufacture or treatment of packages of wavelength conversion means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0363—Manufacture or treatment of packages of optical field-shaping means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0364—Manufacture or treatment of packages of interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/882—Scattering means

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
JP2017526124A 2014-11-18 2015-11-18 集積型カラーｌｅｄマイクロディスプレイ Expired - Fee Related JP6505226B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
GBGB1420452.3A GB201420452D0 (en) 2014-11-18 2014-11-18 Integrated colour led micro-display
GB1420452.3 2014-11-18
PCT/GB2015/053496 WO2016079505A1 (en) 2014-11-18 2015-11-18 Integrated colour led micro-display

Publications (3)

Publication Number Publication Date
JP2017538290A JP2017538290A (ja) 2017-12-21
JP2017538290A5 JP2017538290A5 (enExample) 2018-07-19
JP6505226B2 true JP6505226B2 (ja) 2019-04-24

Family

ID=52248509

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2017526124A Expired - Fee Related JP6505226B2 (ja) 2014-11-18 2015-11-18 集積型カラーｌｅｄマイクロディスプレイ

Country Status (7)

Country Link
US (3) US10008645B2 (enExample)
EP (2) EP3955304B1 (enExample)
JP (1) JP6505226B2 (enExample)
KR (1) KR101968592B1 (enExample)
CN (2) CN112234076A (enExample)
GB (1) GB201420452D0 (enExample)
WO (1) WO2016079505A1 (enExample)

Families Citing this family (140)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB201420452D0 (en) * 2014-11-18 2014-12-31 Mled Ltd Integrated colour led micro-display
US10304811B2 (en) * 2015-09-04 2019-05-28 Hong Kong Beida Jade Bird Display Limited Light-emitting diode display panel with micro lens array
KR102416470B1 (ko) * 2015-12-21 2022-07-04 엘지디스플레이 주식회사 광효율 향상을 위한 표시패널, 표시장치 및 표시패널을 제조하는 방법
CN112289821A (zh) * 2016-04-14 2021-01-29 群创光电股份有限公司 显示装置
US10134802B2 (en) * 2016-05-12 2018-11-20 Ostendo Technologies, Inc. Nanophosphors-converted quantum photonic imagers and methods for making the same
KR102617466B1 (ko) * 2016-07-18 2023-12-26 주식회사 루멘스 마이크로 led 어레이 디스플레이 장치
DE102016113763A1 (de) * 2016-07-26 2018-02-01 Endress+Hauser Conducta Gmbh+Co. Kg Sensoranordnung zum Einsatz in der Prozessautomatisierung
US10606121B2 (en) * 2016-09-12 2020-03-31 Seoul Semiconductor Co., Ltd. Display apparatus
CN106444250A (zh) * 2016-10-28 2017-02-22 江苏新广联半导体有限公司 3led微显示投影模块
US10353204B2 (en) 2016-10-31 2019-07-16 Tectus Corporation Femtoprojector optical systems
WO2018084919A1 (en) * 2016-11-04 2018-05-11 VerLASE TECHNOLOGIES LLC Color-converting structures and light-emitting structures and visual displays made therewith
US10790330B2 (en) 2016-11-24 2020-09-29 Lg Innotek Co., Ltd. Semiconductor device and display device comprising same
FR3061358B1 (fr) * 2016-12-27 2021-06-11 Aledia Procede de fabrication d’un dispositif optoelectronique comportant des plots photoluminescents de photoresine
JP7079940B2 (ja) 2017-01-13 2022-06-03 マサチューセッツ インスティテュート オブ テクノロジー ピクセル化ディスプレイ用多層構造体を形成する方法およびピクセル化ディスプレイ用多層構造体
DE102017100798A1 (de) 2017-01-17 2018-07-19 Osram Opto Semiconductors Gmbh Anzeigevorrichtung
CN109564963B (zh) * 2017-01-26 2021-04-16 株式会社Lg化学 微led和包括其的显示装置
US10903194B2 (en) 2017-04-24 2021-01-26 Hewlett-Packard Development Company, L.P. Micro light-emitting diode display with 3D orifice plating and light filtering
CN112510060B (zh) * 2017-06-02 2023-06-30 南京昀光科技有限公司 一种全彩半导体发光微显示器及其制造工艺
CN107230685A (zh) * 2017-06-02 2017-10-03 南京迈智芯微光电科技有限公司 一种全彩化的半导体发光微显示器及其制造工艺
KR102395993B1 (ko) * 2017-06-05 2022-05-11 삼성전자주식회사 디스플레이 장치
CN108987423B (zh) * 2017-06-05 2023-09-12 三星电子株式会社 显示装置
KR102399464B1 (ko) * 2017-06-27 2022-05-19 주식회사 루멘스 엘이디 패널
KR102455483B1 (ko) * 2017-06-30 2022-10-19 삼성전자주식회사 Led 장치 및 그 제조 방법
CN111247369A (zh) * 2017-08-24 2020-06-05 康宁公司 用于高动态范围微led背光的系统和方法
CN111108613B (zh) * 2017-09-13 2024-01-16 夏普株式会社 Led单元、图像显示元件及其制造方法
CN108323215B (zh) 2017-09-28 2020-10-30 歌尔股份有限公司 微发光二极管转移方法、制造方法和显示装置
US10768515B2 (en) 2017-12-12 2020-09-08 Tectus Corporation Method for manufacturing ultra-dense LED projector using thinned gallium nitride
US10388641B2 (en) 2017-10-19 2019-08-20 Tectus Corporation Ultra-dense LED projector
KR102486391B1 (ko) 2017-11-09 2023-01-09 삼성전자주식회사 고해상도 디스플레이 장치
KR102509639B1 (ko) 2017-12-12 2023-03-15 삼성전자주식회사 발광소자 패키지 제조방법
US11961875B2 (en) 2017-12-20 2024-04-16 Lumileds Llc Monolithic segmented LED array architecture with islanded epitaxial growth
US10854794B2 (en) * 2017-12-20 2020-12-01 Lumileds Llc Monolithic LED array structure
US20190198564A1 (en) * 2017-12-20 2019-06-27 Lumileds Llc Monolithic segmented led array architecture with islanded epitaxial growth
US10957820B2 (en) 2017-12-21 2021-03-23 Lumileds Llc Monolithic, segmented light emitting diode array
US20190198720A1 (en) * 2017-12-22 2019-06-27 Lumileds Llc Particle systems and patterning for monolithic led arrays
KR102521100B1 (ko) 2018-01-08 2023-04-14 삼성디스플레이 주식회사 표시 장치
US11404400B2 (en) 2018-01-24 2022-08-02 Apple Inc. Micro LED based display panel
TWI658446B (zh) * 2018-02-01 2019-05-01 鴻海精密工業股份有限公司 微型led觸控顯示面板
US10673414B2 (en) 2018-02-05 2020-06-02 Tectus Corporation Adaptive tuning of a contact lens
KR102493479B1 (ko) 2018-02-06 2023-02-01 삼성디스플레이 주식회사 표시 장치의 제조 방법
KR102136921B1 (ko) * 2018-03-02 2020-07-28 주식회사 루멘스 차량 외판 부착형 플렉시블 디스플레이 장치
US10503007B1 (en) 2018-02-27 2019-12-10 Facebook Technologies, Llc Directional color conversion using photonic crystals with quantum dots
US10529290B1 (en) * 2018-02-27 2020-01-07 Facebook Technologies, Llc Non-uniformly patterned photonic crystal structures with quantum dots for pixelated color conversion
CN110212064B (zh) 2018-02-28 2020-10-09 华为技术有限公司 一种发光二极管芯片及其制备方法
KR102521582B1 (ko) 2018-04-03 2023-04-12 삼성전자주식회사 발광 다이오드 디스플레이 장치
KR102022310B1 (ko) * 2018-04-04 2019-09-18 한국광기술원 능동소자 집적형 미세 led 칩 및 이에 대한 제조방법
KR102551354B1 (ko) * 2018-04-20 2023-07-04 삼성전자 주식회사 반도체 발광 소자 및 그 제조 방법
DE102018111417A1 (de) * 2018-05-14 2019-11-14 Osram Opto Semiconductors Gmbh Konversionselement, optoelektronisches bauteil, verfahren zur herstellung einer vielzahl von konversionselementen, verfahren zur herstellung einer vielzahl von optoelektronischen bauteilen und verfahren zur herstellung eines optoelektronischen bauteils
US10649239B2 (en) 2018-05-30 2020-05-12 Tectus Corporation Eyeglasses with embedded femtoprojectors
KR20190137458A (ko) 2018-06-01 2019-12-11 삼성전자주식회사 Led를 이용한 디스플레이 모듈 제조방법
CN108987446A (zh) * 2018-07-17 2018-12-11 南方科技大学 一种Micro-LED显示面板及其制造方法
KR102591768B1 (ko) 2018-07-17 2023-10-20 삼성디스플레이 주식회사 표시 장치
EP3608959B1 (en) * 2018-08-06 2023-11-15 Nichia Corporation Light emitting device and method for manufacturing same
TWI720339B (zh) * 2018-08-31 2021-03-01 東貝光電科技股份有限公司 應用於微型led顯示器之led發光模組及應用該led發光模組所製成之顯示器
WO2020049392A1 (ja) * 2018-09-05 2020-03-12 株式会社半導体エネルギー研究所 表示装置、表示モジュール、電子機器、及び表示装置の作製方法
KR102650659B1 (ko) 2018-09-13 2024-03-25 삼성전자주식회사 디스플레이 장치
CN109216590B (zh) * 2018-09-21 2020-11-03 福州大学 一种柔性彩色micro-LED显示器件制备方法
US20200135988A1 (en) 2018-10-26 2020-04-30 Tectus Corporation Methods of modifying the composition of material layers
CN109449259B (zh) * 2018-10-31 2020-07-10 海信视像科技股份有限公司 微型发光二极管灯板、其制作方法、背光模组及显示装置
KR102698293B1 (ko) 2018-11-27 2024-08-23 삼성전자주식회사 디스플레이 장치 및 제조 방법
KR102733562B1 (ko) 2018-12-03 2024-11-25 삼성전자주식회사 디스플레이 장치
US10991865B2 (en) 2018-12-20 2021-04-27 Samsung Display Co., Ltd. Display device
CN109860241B (zh) * 2018-12-29 2021-07-27 苏州清越光电科技股份有限公司 高分辨率Micro-OLED显示模组及其制备方法
JPWO2020157811A1 (ja) * 2019-01-28 2021-11-25 堺ディスプレイプロダクト株式会社 マイクロｌｅｄデバイスおよびその製造方法
KR102704782B1 (ko) 2019-02-08 2024-09-10 삼성디스플레이 주식회사 표시 장치
KR102690987B1 (ko) 2019-02-25 2024-08-01 삼성디스플레이 주식회사 표시 장치 및 이의 제조 방법
US11637219B2 (en) 2019-04-12 2023-04-25 Google Llc Monolithic integration of different light emitting structures on a same substrate
FR3095550B1 (fr) * 2019-04-26 2021-05-21 Commissariat Energie Atomique Procede de realisation d’un dispositif photo-emetteur et/ou photo-recepteur a grille de separation optique metallique
KR20200142685A (ko) * 2019-06-13 2020-12-23 삼성전자주식회사 마이크로 led 전사 방법 및 이에 의해 제조된 디스플레이 모듈
KR102730932B1 (ko) 2019-06-19 2024-11-19 삼성디스플레이 주식회사 표시 장치
US11271032B2 (en) 2019-06-20 2022-03-08 Samsung Display Co., Ltd. Display device
KR102827322B1 (ko) 2019-06-21 2025-07-02 삼성디스플레이 주식회사 표시 장치 및 그의 제조 방법
KR102746084B1 (ko) 2019-07-08 2024-12-26 삼성전자주식회사 발광소자 패키지 및 이를 이용한 디스플레이 패널
KR102684757B1 (ko) 2019-08-22 2024-07-16 삼성디스플레이 주식회사 표시 장치
WO2021051100A1 (en) 2019-09-13 2021-03-18 Avicenatech Corp. Optical interconnects using microleds
KR102739953B1 (ko) 2019-10-22 2024-12-06 삼성전자주식회사 마이크로 led 소자 및 그 제조 방법
KR102787185B1 (ko) 2019-11-12 2025-03-28 삼성디스플레이 주식회사 표시 장치 및 그의 제조 방법
US11121289B2 (en) 2019-11-20 2021-09-14 Tectus Corporation Ultra-dense quantum dot color converters
KR102877707B1 (ko) 2019-11-26 2025-10-29 삼성디스플레이 주식회사 표시패널 및 이의 제조 방법
US11674795B2 (en) 2019-12-18 2023-06-13 Lumileds Llc Miniature pattern projector using microLEDs and micro-optics
KR102856221B1 (ko) * 2019-12-19 2025-09-05 엘지디스플레이 주식회사 마이크로 엘이디 표시 장치 및 이의 제조방법
TWI725757B (zh) 2020-03-05 2021-04-21 財團法人工業技術研究院 子畫素結構、畫素結構以及應用於其的發光二極體晶粒
US11942507B2 (en) 2020-03-11 2024-03-26 Lumileds Llc Light emitting diode devices
US11569415B2 (en) 2020-03-11 2023-01-31 Lumileds Llc Light emitting diode devices with defined hard mask opening
US11735695B2 (en) 2020-03-11 2023-08-22 Lumileds Llc Light emitting diode devices with current spreading layer
US11848402B2 (en) 2020-03-11 2023-12-19 Lumileds Llc Light emitting diode devices with multilayer composite film including current spreading layer
KR20210137810A (ko) * 2020-05-11 2021-11-18 삼성전자주식회사 전자 소자, 이의 제조 방법, 및 이를 포함하는 표시 장치
WO2021231772A1 (en) 2020-05-15 2021-11-18 Lumileds Llc Light-emitting device with configurable spatial distribution of emission intensity
KR102787637B1 (ko) 2020-05-19 2025-03-27 삼성디스플레이 주식회사 표시 장치
GB2599065B (en) * 2020-05-22 2023-05-10 Plessey Semiconductors Ltd Light emitting device array
GB2595715B (en) * 2020-06-04 2022-08-17 Plessey Semiconductors Ltd Enhanced colour conversion and collimation of micro-LED devices
US11764095B2 (en) 2020-07-10 2023-09-19 Samsung Electronics Co., Ltd. Wet alignment method for micro-semiconductor chip and display transfer structure
KR102885870B1 (ko) 2020-09-08 2025-11-12 삼성전자주식회사 마이크로 발광 소자 및 이를 포함한 디스플레이 장치
US11901491B2 (en) 2020-10-29 2024-02-13 Lumileds Llc Light emitting diode devices
US11626538B2 (en) 2020-10-29 2023-04-11 Lumileds Llc Light emitting diode device with tunable emission
US12040432B2 (en) 2020-10-30 2024-07-16 Lumileds Llc Light emitting diode devices with patterned TCO layer including different thicknesses
KR20220062213A (ko) * 2020-11-06 2022-05-16 삼성디스플레이 주식회사 반도체 나노입자, 이를 포함한 전자 장치 및 상기 반도체 나노입자의 제조 방법
JP2023549801A (ja) * 2020-11-11 2023-11-29 アプライド マテリアルズ インコーポレイテッド ディスプレイフロントパネルデバイス
US11955583B2 (en) 2020-12-01 2024-04-09 Lumileds Llc Flip chip micro light emitting diodes
US11705534B2 (en) 2020-12-01 2023-07-18 Lumileds Llc Methods of making flip chip micro light emitting diodes
US11600656B2 (en) 2020-12-14 2023-03-07 Lumileds Llc Light emitting diode device
TW202226609A (zh) * 2020-12-21 2022-07-01 美商菲絲博克科技有限公司 用於微發光二極體的光束整形二次光學組件
DE102021101657B4 (de) 2021-01-26 2024-12-12 Infineon Technologies Ag Verfahren zur Herstellung eines hybriden Bauelements
CN112908196B (zh) * 2021-01-29 2023-12-19 厦门天马微电子有限公司 一种显示面板以及显示装置
DE102021106332A1 (de) 2021-03-16 2022-09-22 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronische baugruppe, displayanordnung und verfahren
US11721796B2 (en) 2021-03-29 2023-08-08 Tectus Corporation LED displays fabricated using hybrid bonding
US12453228B2 (en) 2021-04-30 2025-10-21 Samsung Display Co., Ltd. Display device and method of manufacturing the same
US12446387B2 (en) 2021-04-30 2025-10-14 Samsung Display Co., Ltd. Display device and manufacturing method thereof
US12336350B2 (en) 2021-04-30 2025-06-17 Samsung Display Co., Ltd. High resolution display device with reduced current consumption and load
US12191340B2 (en) 2021-04-30 2025-01-07 Samsung Display Co., Ltd. Display device
US20220352247A1 (en) * 2021-04-30 2022-11-03 Samsung Display Co., Ltd. Display device and method of manufacturing the same
KR102877038B1 (ko) 2021-04-30 2025-10-28 삼성디스플레이 주식회사 표시 장치 및 그의 제조 방법
KR102788201B1 (ko) 2021-04-30 2025-03-28 삼성디스플레이 주식회사 표시 장치 및 그 제조 방법
KR102866873B1 (ko) 2021-04-30 2025-10-01 삼성디스플레이 주식회사 표시 장치 및 표시 장치의 제조 방법
KR20220149880A (ko) 2021-04-30 2022-11-09 삼성디스플레이 주식회사 표시 장치 및 그 제조 방법
US20220406764A1 (en) * 2021-05-14 2022-12-22 Seoul Viosys Co., Ltd. Light emiting module and display apparatus having the same
TWI799929B (zh) * 2021-07-29 2023-04-21 錼創顯示科技股份有限公司 微型發光二極體顯示裝置及其製造方法
KR102881169B1 (ko) 2021-08-10 2025-11-05 삼성디스플레이 주식회사 표시 장치와 그의 제조 방법
US20240355965A1 (en) * 2021-08-30 2024-10-24 Sony Group Corporation Light emitting device and image display apparatus
US12402440B2 (en) 2021-09-03 2025-08-26 Lumileds Llc Light emitting diode devices with bonding and/or ohmic contact-reflective material
US12484346B2 (en) 2021-09-03 2025-11-25 Lumileds Singapore Pte. Ltd. Light emitting diode devices with bonding and/or ohmic contact-reflective material
US12419137B2 (en) 2021-09-10 2025-09-16 Lumileds Llc Light emitting diodes with segmented anodes by pixel
US12433080B2 (en) 2021-09-29 2025-09-30 Lumileds Singapore Pte. Ltd. Hybrid CMOS micro-LED display layout
US12431478B2 (en) 2021-09-29 2025-09-30 Lumileds Singapore Pte. Ltd. Hybrid CMOS micro-LED display layout
KR20230053028A (ko) 2021-10-13 2023-04-21 삼성디스플레이 주식회사 표시 장치와 그의 제조 방법
US11935987B2 (en) 2021-11-03 2024-03-19 Lumileds Llc Light emitting diode arrays with a light-emitting pixel area
US12490570B2 (en) 2021-11-12 2025-12-02 Lumileds Singapore Pte. Ltd. Thin-film LED array with low refractive index patterned structures
KR102871988B1 (ko) 2021-12-23 2025-10-16 삼성전자주식회사 적층형 디스플레이 구동 집적 회로 및 이를 포함하는 디스플레이 장치
CN114361145A (zh) * 2021-12-31 2022-04-15 湖北长江新型显示产业创新中心有限公司 一种显示面板及其制造方法、一种显示装置
US12424599B2 (en) 2022-02-28 2025-09-23 The Hong Kong University Of Science And Technology Full-color light-emitting diode micro-display and the fabrication method thereof
EP4250379A1 (en) * 2022-03-24 2023-09-27 Micledi Microdisplays BV An optoelectronic device with color conversion and with conformal dbr and an associated fabrication method
WO2023180015A1 (en) * 2022-03-24 2023-09-28 Micledi Microdisplays Bv An optoelectronic device with color conversion and with conformal dbr and an associated fabrication method
EP4293734A4 (en) * 2022-04-29 2024-10-23 Fujian Prima Optoelectronics Co., Ltd Micro led light projection chip and method for manufacturing same
US20240413274A1 (en) * 2022-05-31 2024-12-12 Boe Technology Group Co., Ltd. Chip structure and manufacturing method therefor, display substrate and display device
JP2024070035A (ja) * 2022-11-10 2024-05-22 国立研究開発法人情報通信研究機構 半導体発光素子、半導体発光素子の製造方法、発光モジュール及び発光モジュールの製造方法
JP2024070034A (ja) * 2022-11-10 2024-05-22 国立研究開発法人情報通信研究機構 半導体発光素子及び発光モジュール
WO2024156371A1 (en) 2023-01-27 2024-08-02 Ams-Osram International Gmbh Optoelectronic device and method for manufacturing the same
FR3153690B1 (fr) * 2023-09-29 2025-08-29 Aledia Dispositif optoélectronique et procédé de fabrication
CN117525254A (zh) * 2023-12-20 2024-02-06 西安赛富乐斯半导体科技有限公司 Led发光构件及其构造方法
WO2025145254A1 (en) * 2024-01-04 2025-07-10 Vuereal Inc. Microdisplays

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5661371A (en) * 1990-12-31 1997-08-26 Kopin Corporation Color filter system for light emitting display panels
US20050146258A1 (en) * 1999-06-02 2005-07-07 Shimon Weiss Electronic displays using optically pumped luminescent semiconductor nanocrystals
US6410942B1 (en) * 1999-12-03 2002-06-25 Cree Lighting Company Enhanced light extraction through the use of micro-LED arrays
CN1742391A (zh) * 2003-01-27 2006-03-01 3M创新有限公司 具有聚合物长通反射器的基于荧光粉的光源
ES2356606T3 (es) * 2003-08-08 2011-04-11 Kang, Sang-Kyu Microdiodo emisor de luz de nitruro con alto brillo y procedimiento de fabricación del mismo.
JP2008010298A (ja) * 2006-06-29 2008-01-17 Idemitsu Kosan Co Ltd 色変換基板及びカラー表示装置
TWI367465B (en) * 2008-02-15 2012-07-01 Foxsemicon Integrated Tech Inc Led display
JP2010040976A (ja) * 2008-08-08 2010-02-18 Sony Corp 発光素子及びこれを用いた照明装置並びに表示装置
JP2010087224A (ja) * 2008-09-30 2010-04-15 Toyoda Gosei Co Ltd Ｌｅｄ表示装置およびｌｅｄ表示装置用隔壁の製造方法
WO2010056596A2 (en) 2008-11-13 2010-05-20 3M Innovative Properties Company Electrically pixelated luminescent device incorporating optical elements
WO2010149027A1 (en) * 2009-06-22 2010-12-29 Industrial Technology Research Institute Light-emitting unit array, method for fabricating the same and projection apparatus
US8642363B2 (en) * 2009-12-09 2014-02-04 Nano And Advanced Materials Institute Limited Monolithic full-color LED micro-display on an active matrix panel manufactured using flip-chip technology
JP2011216668A (ja) * 2010-03-31 2011-10-27 Sony Corp 発光装置
CN102959708B (zh) * 2010-06-29 2016-05-04 柯立芝照明有限公司 具有易弯曲基板的电子装置
JP5643720B2 (ja) * 2011-06-30 2014-12-17 株式会社沖データ ディスプレイモジュール及びその製造方法と表示装置
JPWO2014006987A1 (ja) * 2012-07-04 2016-06-02 シャープ株式会社 蛍光材料、蛍光塗料、蛍光体基板、電子機器およびｌｅｄパッケージ
KR101452768B1 (ko) 2012-08-21 2014-10-21 엘지전자 주식회사 반도체 발광 소자를 이용한 디스플레이 장치 및 이의 제조방법
KR101422037B1 (ko) * 2012-09-04 2014-07-23 엘지전자 주식회사 반도체 발광 소자를 이용한 디스플레이 장치
US9424775B2 (en) * 2012-10-15 2016-08-23 The Hong Kong University Of Science And Technology LEDoS projection system
US9153171B2 (en) * 2012-12-17 2015-10-06 LuxVue Technology Corporation Smart pixel lighting and display microcontroller
CN107155373B (zh) * 2014-06-18 2019-01-15 艾克斯瑟乐普林特有限公司 微组装led显示器
GB201420452D0 (en) * 2014-11-18 2014-12-31 Mled Ltd Integrated colour led micro-display
US10177127B2 (en) * 2015-09-04 2019-01-08 Hong Kong Beida Jade Bird Display Limited Semiconductor apparatus and method of manufacturing the same
US10700121B2 (en) * 2017-02-13 2020-06-30 Sct Ltd. Integrated multilayer monolithic assembly LED displays and method of making thereof
WO2019147738A1 (en) * 2018-01-23 2019-08-01 Light Share, LLC Full-color monolithic micro-led pixels

Also Published As

Publication number Publication date
CN107210315A (zh) 2017-09-26
US10367122B2 (en) 2019-07-30
CN107210315B (zh) 2020-11-03
WO2016079505A1 (en) 2016-05-26
US20180261736A1 (en) 2018-09-13
KR20170084139A (ko) 2017-07-19
US20200028036A1 (en) 2020-01-23
CN112234076A (zh) 2021-01-15
US10008645B2 (en) 2018-06-26
EP3221890A1 (en) 2017-09-27
US10862010B2 (en) 2020-12-08
EP3221890B1 (en) 2022-01-12
KR101968592B1 (ko) 2019-04-12
US20170309798A1 (en) 2017-10-26
JP2017538290A (ja) 2017-12-21
EP3955304A1 (en) 2022-02-16
GB201420452D0 (en) 2014-12-31
EP3955304B1 (en) 2024-01-03

Similar Documents

Publication Publication Date Title
JP6505226B2 (ja) 集積型カラーｌｅｄマイクロディスプレイ
CN110224000B (zh) 图像显示元件
JP7613811B2 (ja) 光電子デバイスのための統合された構造および該統合された構造を製造する方法
CN114649322B (zh) Micro LED显示器件及制备方法
KR20250134175A (ko) 마이크로 led 마이크로디스플레이 칩 및 이의 제조 방법
CN111615749A (zh) 基于微型led的显示面板
EP4002469A1 (en) Display device using micro led, and manufacturing method therefor
CN111525006A (zh) 发光堆叠件和具有该发光堆叠件的显示装置
CN111052412A (zh) 微型led元件、图像显示元件以及制造方法
CN102386200A (zh) 发光单元阵列与投影系统
CN102576783A (zh) 像素化led
TWI884839B (zh) 顯示器、像素與半導體處理方法
US11482566B2 (en) Light emitting device for display and display apparatus having the same
CN110504280A (zh) 显示阵列
US20250056952A1 (en) Light emitting device for display and display apparatus having the same
CN113851502A (zh) 显示面板、显示装置及显示面板的制备方法
CN112310142B (zh) 一种显示装置、显示面板及其制作方法
CN110504281A (zh) 显示阵列的制造方法
CN116825927A (zh) Micro-LED芯片及其制作方法、显示面板和电子设备
KR20230019832A (ko) 고효율 마이크로 led 디스플레이를 위한 스페이서 led 아키텍처
TWI708104B (zh) 顯示陣列
TW202203449A (zh) 用於微型顯示應用的間隙子的微型發光二極體結構

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20180608

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20180608

A871 Explanation of circumstances concerning accelerated examination

Free format text: JAPANESE INTERMEDIATE CODE: A871

Effective date: 20180608

RD03 Notification of appointment of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7423

Effective date: 20180709

RD04 Notification of resignation of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7424

Effective date: 20180709

A975 Report on accelerated examination

Free format text: JAPANESE INTERMEDIATE CODE: A971005

Effective date: 20180815

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20180821

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20181121

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20181226

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20190226

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20190326

R150 Certificate of patent or registration of utility model

Ref document number: 6505226

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

RD02 Notification of acceptance of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: R3D02

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

S533 Written request for registration of change of name

Free format text: JAPANESE INTERMEDIATE CODE: R313533

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees