KR101966991B1 - 촬상 장치 및 촬상 표시 시스템 - Google Patents

촬상 장치 및 촬상 표시 시스템 Download PDF

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Publication number
KR101966991B1
KR101966991B1 KR1020120086099A KR20120086099A KR101966991B1 KR 101966991 B1 KR101966991 B1 KR 101966991B1 KR 1020120086099 A KR1020120086099 A KR 1020120086099A KR 20120086099 A KR20120086099 A KR 20120086099A KR 101966991 B1 KR101966991 B1 KR 101966991B1
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Korean (ko)
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KR20130020566A (ko
Inventor
미치루 센다
신지 후지모토
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소니 세미컨덕터 솔루션즈 가부시키가이샤
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    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/62Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels
    • H04N25/626Reduction of noise due to residual charges remaining after image readout, e.g. to remove ghost images or afterimages
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/30Circuitry of solid-state image sensors [SSIS]; Control thereof for transforming X-rays into image signals
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70SSIS architectures; Circuits associated therewith
    • H04N25/76Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/767Horizontal readout lines, multiplexers or registers
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70SSIS architectures; Circuits associated therewith
    • H04N25/76Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/7795Circuitry for generating timing or clock signals
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70SSIS architectures; Circuits associated therewith
    • H04N25/76Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/78Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70SSIS architectures; Circuits associated therewith
    • H04N25/79Arrangements of circuitry being divided between different or multiple substrates, chips or circuit boards, e.g. stacked image sensors

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  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
KR1020120086099A 2011-08-18 2012-08-07 촬상 장치 및 촬상 표시 시스템 Expired - Fee Related KR101966991B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2011-178682 2011-08-18
JP2011178682A JP5853486B2 (ja) 2011-08-18 2011-08-18 撮像装置および撮像表示システム

Publications (2)

Publication Number Publication Date
KR20130020566A KR20130020566A (ko) 2013-02-27
KR101966991B1 true KR101966991B1 (ko) 2019-04-08

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KR1020120086099A Expired - Fee Related KR101966991B1 (ko) 2011-08-18 2012-08-07 촬상 장치 및 촬상 표시 시스템

Country Status (5)

Country Link
US (1) US8901504B2 (https=)
EP (1) EP2560373B1 (https=)
JP (1) JP5853486B2 (https=)
KR (1) KR101966991B1 (https=)
CN (1) CN102957881B (https=)

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* Cited by examiner, † Cited by third party
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US10700141B2 (en) 2006-09-29 2020-06-30 University Of Florida Research Foundation, Incorporated Method and apparatus for infrared detection and display
KR101820772B1 (ko) 2010-05-24 2018-01-22 유니버시티 오브 플로리다 리서치 파운데이션, 인크. 적외선 업-컨버젼 장치 상에 전하 차단층을 제공하기 위한 방법 및 장치
MX2013015214A (es) 2011-06-30 2014-03-21 Nanoholdings Llc Metodo y aparato para detectar radiacion infrarroja con ganancia.
DE102013110695A1 (de) * 2012-10-02 2014-04-03 Samsung Electronics Co., Ltd. Bildsensor, Verfahren zum Betreiben desselben und Bildverarbeitungssystem mit demselben
US20150372046A1 (en) * 2013-01-25 2015-12-24 University Of Florida Research Foundation, Inc. A NOVEL IR IMAGE SENSOR USING A SOLUTION-PROCESSED PbS PHOTODETECTOR
JP6195728B2 (ja) * 2013-04-30 2017-09-13 富士フイルム株式会社 固体撮像素子および撮像装置
WO2016121352A1 (ja) * 2015-01-28 2016-08-04 パナソニックIpマネジメント株式会社 固体撮像装置およびカメラ
CN107534745B (zh) * 2015-04-28 2020-12-18 卡普索影像公司 具有集成功率节约控制的图像传感器
WO2017039774A2 (en) 2015-06-11 2017-03-09 University Of Florida Research Foundation, Incorporated Monodisperse, ir-absorbing nanoparticles and related methods and devices
CN108680587B (zh) 2018-05-09 2020-12-15 京东方科技集团股份有限公司 一种检测电路、信号处理方法和平板探测器
JP2023124986A (ja) * 2022-02-28 2023-09-07 キヤノン株式会社 光電変換装置及びその駆動方法

Citations (2)

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JP2009017218A (ja) * 2007-07-04 2009-01-22 Canon Inc 撮像装置及びその処理方法
JP2010183435A (ja) * 2009-02-06 2010-08-19 Toshiba Corp 固体撮像装置

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DE4118154A1 (de) * 1991-06-03 1992-12-10 Philips Patentverwaltung Anordnung mit einer sensormatrix und einer ruecksetzanordnung
US5668375A (en) * 1996-08-26 1997-09-16 General Electric Company Fast scan reset for a large area x-ray detector
JP4019250B2 (ja) * 2001-11-14 2007-12-12 カシオ計算機株式会社 フォトセンサシステム及びフォトセンサシステムにおけるフォトセンサの駆動制御方法
JP4242258B2 (ja) * 2003-11-21 2009-03-25 シャープ株式会社 固体撮像素子
JP4316478B2 (ja) * 2004-11-18 2009-08-19 シャープ株式会社 画像センサおよびその駆動方法、並びに走査駆動器
JP4847202B2 (ja) * 2006-04-27 2011-12-28 キヤノン株式会社 撮像装置及び放射線撮像システム
TWI357262B (en) * 2007-11-14 2012-01-21 Novatek Microelectronics Corp Method for resetting image sensing operation and i
JP5439984B2 (ja) * 2009-07-03 2014-03-12 ソニー株式会社 光電変換装置および放射線撮像装置
JP5218309B2 (ja) * 2009-07-14 2013-06-26 ソニー株式会社 固体撮像素子およびその制御方法、並びにカメラシステム
JP2011030060A (ja) * 2009-07-28 2011-02-10 Olympus Corp 固体撮像装置および撮像方法
JP5721994B2 (ja) 2009-11-27 2015-05-20 株式会社ジャパンディスプレイ 放射線撮像装置
JP2011178682A (ja) 2010-02-26 2011-09-15 Mitsui Chemicals Inc 遷移金属錯体化合物、該化合物を含むオレフィン多量化用触媒および該触媒存在下で行うオレフィン多量体の製造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009017218A (ja) * 2007-07-04 2009-01-22 Canon Inc 撮像装置及びその処理方法
JP2010183435A (ja) * 2009-02-06 2010-08-19 Toshiba Corp 固体撮像装置

Also Published As

Publication number Publication date
EP2560373B1 (en) 2018-02-28
JP2013042403A (ja) 2013-02-28
CN102957881B (zh) 2017-07-28
JP5853486B2 (ja) 2016-02-09
EP2560373A2 (en) 2013-02-20
US8901504B2 (en) 2014-12-02
CN102957881A (zh) 2013-03-06
EP2560373A3 (en) 2014-06-11
KR20130020566A (ko) 2013-02-27
US20130044250A1 (en) 2013-02-21

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