CN102957881B - 图像拾取单元以及图像拾取和显示系统 - Google Patents
图像拾取单元以及图像拾取和显示系统 Download PDFInfo
- Publication number
- CN102957881B CN102957881B CN201210285271.7A CN201210285271A CN102957881B CN 102957881 B CN102957881 B CN 102957881B CN 201210285271 A CN201210285271 A CN 201210285271A CN 102957881 B CN102957881 B CN 102957881B
- Authority
- CN
- China
- Prior art keywords
- row
- reset
- sequential
- image pickup
- driving
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000006243 chemical reaction Methods 0.000 claims abstract description 102
- 230000005855 radiation Effects 0.000 claims description 15
- 230000035945 sensitivity Effects 0.000 claims 1
- 230000004048 modification Effects 0.000 description 31
- 238000012986 modification Methods 0.000 description 31
- 238000010586 diagram Methods 0.000 description 27
- 239000004065 semiconductor Substances 0.000 description 19
- 239000003990 capacitor Substances 0.000 description 9
- 230000007246 mechanism Effects 0.000 description 8
- 238000012545 processing Methods 0.000 description 7
- 239000010408 film Substances 0.000 description 6
- 230000003071 parasitic effect Effects 0.000 description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 5
- 229920006395 saturated elastomer Polymers 0.000 description 5
- 101150105133 RRAD gene Proteins 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 206010047571 Visual impairment Diseases 0.000 description 3
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- 230000004044 response Effects 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 230000007704 transition Effects 0.000 description 3
- 230000001133 acceleration Effects 0.000 description 2
- RPPBZEBXAAZZJH-UHFFFAOYSA-N cadmium telluride Chemical compound [Te]=[Cd] RPPBZEBXAAZZJH-UHFFFAOYSA-N 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 230000004907 flux Effects 0.000 description 2
- 229910021424 microcrystalline silicon Inorganic materials 0.000 description 2
- 239000011669 selenium Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 102100040862 Dual specificity protein kinase CLK1 Human genes 0.000 description 1
- 102100040844 Dual specificity protein kinase CLK2 Human genes 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 101000749294 Homo sapiens Dual specificity protein kinase CLK1 Proteins 0.000 description 1
- 101000749291 Homo sapiens Dual specificity protein kinase CLK2 Proteins 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 206010034960 Photophobia Diseases 0.000 description 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 101100313728 Vitis vinifera VINST1 gene Proteins 0.000 description 1
- 230000005260 alpha ray Effects 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000003542 behavioural effect Effects 0.000 description 1
- 230000005250 beta ray Effects 0.000 description 1
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 description 1
- 229910001634 calcium fluoride Inorganic materials 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 230000005251 gamma ray Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 208000013469 light sensitivity Diseases 0.000 description 1
- 239000003550 marker Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000002601 radiography Methods 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
- H04N25/62—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels
- H04N25/626—Reduction of noise due to residual charges remaining after image readout, e.g. to remove ghost images or afterimages
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/30—Circuitry of solid-state image sensors [SSIS]; Control thereof for transforming X-rays into image signals
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
- H04N25/767—Horizontal readout lines, multiplexers or registers
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
- H04N25/7795—Circuitry for generating timing or clock signals
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
- H04N25/78—Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/79—Arrangements of circuitry being divided between different or multiple substrates, chips or circuit boards, e.g. stacked image sensors
Landscapes
- Engineering & Computer Science (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011-178682 | 2011-08-18 | ||
| JP2011178682A JP5853486B2 (ja) | 2011-08-18 | 2011-08-18 | 撮像装置および撮像表示システム |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102957881A CN102957881A (zh) | 2013-03-06 |
| CN102957881B true CN102957881B (zh) | 2017-07-28 |
Family
ID=46682702
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210285271.7A Expired - Fee Related CN102957881B (zh) | 2011-08-18 | 2012-08-10 | 图像拾取单元以及图像拾取和显示系统 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US8901504B2 (https=) |
| EP (1) | EP2560373B1 (https=) |
| JP (1) | JP5853486B2 (https=) |
| KR (1) | KR101966991B1 (https=) |
| CN (1) | CN102957881B (https=) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10700141B2 (en) | 2006-09-29 | 2020-06-30 | University Of Florida Research Foundation, Incorporated | Method and apparatus for infrared detection and display |
| KR101820772B1 (ko) | 2010-05-24 | 2018-01-22 | 유니버시티 오브 플로리다 리서치 파운데이션, 인크. | 적외선 업-컨버젼 장치 상에 전하 차단층을 제공하기 위한 방법 및 장치 |
| MX2013015214A (es) | 2011-06-30 | 2014-03-21 | Nanoholdings Llc | Metodo y aparato para detectar radiacion infrarroja con ganancia. |
| DE102013110695A1 (de) * | 2012-10-02 | 2014-04-03 | Samsung Electronics Co., Ltd. | Bildsensor, Verfahren zum Betreiben desselben und Bildverarbeitungssystem mit demselben |
| US20150372046A1 (en) * | 2013-01-25 | 2015-12-24 | University Of Florida Research Foundation, Inc. | A NOVEL IR IMAGE SENSOR USING A SOLUTION-PROCESSED PbS PHOTODETECTOR |
| JP6195728B2 (ja) * | 2013-04-30 | 2017-09-13 | 富士フイルム株式会社 | 固体撮像素子および撮像装置 |
| WO2016121352A1 (ja) * | 2015-01-28 | 2016-08-04 | パナソニックIpマネジメント株式会社 | 固体撮像装置およびカメラ |
| CN107534745B (zh) * | 2015-04-28 | 2020-12-18 | 卡普索影像公司 | 具有集成功率节约控制的图像传感器 |
| WO2017039774A2 (en) | 2015-06-11 | 2017-03-09 | University Of Florida Research Foundation, Incorporated | Monodisperse, ir-absorbing nanoparticles and related methods and devices |
| CN108680587B (zh) | 2018-05-09 | 2020-12-15 | 京东方科技集团股份有限公司 | 一种检测电路、信号处理方法和平板探测器 |
| JP2023124986A (ja) * | 2022-02-28 | 2023-09-07 | キヤノン株式会社 | 光電変換装置及びその駆動方法 |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5572257A (en) * | 1991-06-03 | 1996-11-05 | U.S. Philips Corporation | Arrangement comprising a sensor matrix |
| US5668375A (en) * | 1996-08-26 | 1997-09-16 | General Electric Company | Fast scan reset for a large area x-ray detector |
| JP4242258B2 (ja) * | 2003-11-21 | 2009-03-25 | シャープ株式会社 | 固体撮像素子 |
| JP4316478B2 (ja) * | 2004-11-18 | 2009-08-19 | シャープ株式会社 | 画像センサおよびその駆動方法、並びに走査駆動器 |
| CN101959026A (zh) * | 2009-07-14 | 2011-01-26 | 索尼公司 | 固态成像装置、其控制方法、及照相机系统 |
| JP2011030060A (ja) * | 2009-07-28 | 2011-02-10 | Olympus Corp | 固体撮像装置および撮像方法 |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4019250B2 (ja) * | 2001-11-14 | 2007-12-12 | カシオ計算機株式会社 | フォトセンサシステム及びフォトセンサシステムにおけるフォトセンサの駆動制御方法 |
| JP4847202B2 (ja) * | 2006-04-27 | 2011-12-28 | キヤノン株式会社 | 撮像装置及び放射線撮像システム |
| JP4931232B2 (ja) * | 2007-07-04 | 2012-05-16 | キヤノン株式会社 | 撮像装置及びその処理方法 |
| TWI357262B (en) * | 2007-11-14 | 2012-01-21 | Novatek Microelectronics Corp | Method for resetting image sensing operation and i |
| JP2010183435A (ja) * | 2009-02-06 | 2010-08-19 | Toshiba Corp | 固体撮像装置 |
| JP5439984B2 (ja) * | 2009-07-03 | 2014-03-12 | ソニー株式会社 | 光電変換装置および放射線撮像装置 |
| JP5721994B2 (ja) | 2009-11-27 | 2015-05-20 | 株式会社ジャパンディスプレイ | 放射線撮像装置 |
| JP2011178682A (ja) | 2010-02-26 | 2011-09-15 | Mitsui Chemicals Inc | 遷移金属錯体化合物、該化合物を含むオレフィン多量化用触媒および該触媒存在下で行うオレフィン多量体の製造方法 |
-
2011
- 2011-08-18 JP JP2011178682A patent/JP5853486B2/ja not_active Expired - Fee Related
-
2012
- 2012-08-07 KR KR1020120086099A patent/KR101966991B1/ko not_active Expired - Fee Related
- 2012-08-09 EP EP12179817.7A patent/EP2560373B1/en not_active Not-in-force
- 2012-08-10 US US13/571,620 patent/US8901504B2/en active Active
- 2012-08-10 CN CN201210285271.7A patent/CN102957881B/zh not_active Expired - Fee Related
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5572257A (en) * | 1991-06-03 | 1996-11-05 | U.S. Philips Corporation | Arrangement comprising a sensor matrix |
| US5668375A (en) * | 1996-08-26 | 1997-09-16 | General Electric Company | Fast scan reset for a large area x-ray detector |
| JP4242258B2 (ja) * | 2003-11-21 | 2009-03-25 | シャープ株式会社 | 固体撮像素子 |
| JP4316478B2 (ja) * | 2004-11-18 | 2009-08-19 | シャープ株式会社 | 画像センサおよびその駆動方法、並びに走査駆動器 |
| CN101959026A (zh) * | 2009-07-14 | 2011-01-26 | 索尼公司 | 固态成像装置、其控制方法、及照相机系统 |
| JP2011030060A (ja) * | 2009-07-28 | 2011-02-10 | Olympus Corp | 固体撮像装置および撮像方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| EP2560373B1 (en) | 2018-02-28 |
| JP2013042403A (ja) | 2013-02-28 |
| JP5853486B2 (ja) | 2016-02-09 |
| EP2560373A2 (en) | 2013-02-20 |
| US8901504B2 (en) | 2014-12-02 |
| CN102957881A (zh) | 2013-03-06 |
| KR101966991B1 (ko) | 2019-04-08 |
| EP2560373A3 (en) | 2014-06-11 |
| KR20130020566A (ko) | 2013-02-27 |
| US20130044250A1 (en) | 2013-02-21 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102957881B (zh) | 图像拾取单元以及图像拾取和显示系统 | |
| CN103067670B (zh) | 图像拍摄单元和图像拍摄显示系统 | |
| CN103067666B (zh) | 图像拍摄装置和图像拍摄显示系统 | |
| CN103581517B (zh) | 摄像单元、摄像单元的驱动方法和摄像显示系统 | |
| CN103095998B (zh) | 图像拍摄单元和图像拍摄显示系统 | |
| US8928773B2 (en) | Image pickup unit and image pickup display system | |
| CN104079847B (zh) | 摄像装置和图像拍摄显示系统 | |
| JP5999921B2 (ja) | 撮像装置および撮像表示システム | |
| CN103067668B (zh) | 图像拍摄单元和图像拍摄显示系统 | |
| CN103124323B (zh) | 图像拍摄单元和图像拍摄显示系统 | |
| CN102801902A (zh) | 信号传输装置和摄像显示系统 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C41 | Transfer of patent application or patent right or utility model | ||
| TA01 | Transfer of patent application right |
Effective date of registration: 20160913 Address after: Kanagawa Applicant after: SONY semiconductor solutions Address before: Tokyo, Japan, Japan Applicant before: Sony Corp |
|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20170728 Termination date: 20200810 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |