KR101917882B1 - 반도체 장치 - Google Patents

반도체 장치 Download PDF

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Publication number
KR101917882B1
KR101917882B1 KR1020110106381A KR20110106381A KR101917882B1 KR 101917882 B1 KR101917882 B1 KR 101917882B1 KR 1020110106381 A KR1020110106381 A KR 1020110106381A KR 20110106381 A KR20110106381 A KR 20110106381A KR 101917882 B1 KR101917882 B1 KR 101917882B1
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South Korea
Prior art keywords
layer
buffer layer
electrode layer
oxide semiconductor
buffer
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Expired - Fee Related
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KR1020110106381A
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English (en)
Korean (ko)
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KR20120047770A (ko
Inventor
？뻬이 야마자끼
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가부시키가이샤 한도오따이 에네루기 켄큐쇼
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
    • H10D30/6715—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes characterised by the doping profiles, e.g. having lightly-doped source or drain extensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/62—Electrodes ohmically coupled to a semiconductor

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  • Thin Film Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
KR1020110106381A 2010-10-20 2011-10-18 반도체 장치 Expired - Fee Related KR101917882B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2010-235986 2010-10-20
JP2010235986 2010-10-20

Publications (2)

Publication Number Publication Date
KR20120047770A KR20120047770A (ko) 2012-05-14
KR101917882B1 true KR101917882B1 (ko) 2018-11-12

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Family Applications (1)

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KR1020110106381A Expired - Fee Related KR101917882B1 (ko) 2010-10-20 2011-10-18 반도체 장치

Country Status (4)

Country Link
US (2) US8803143B2 (https=)
JP (3) JP5848089B2 (https=)
KR (1) KR101917882B1 (https=)
TW (1) TWI556451B (https=)

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US8569754B2 (en) 2010-11-05 2013-10-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
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TWI709244B (zh) 2012-09-24 2020-11-01 日商半導體能源研究所股份有限公司 半導體裝置
DE102013111501B4 (de) 2013-10-18 2024-02-08 Universität Stuttgart Dünnschichttransistor und Verfahren zu seiner Herstellung
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WO2015097586A1 (en) * 2013-12-25 2015-07-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR102159684B1 (ko) 2014-02-17 2020-09-25 삼성디스플레이 주식회사 박막 트랜지스터
US9887291B2 (en) 2014-03-19 2018-02-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, display device including the semiconductor device, display module including the display device, and electronic device including the semiconductor device, the display device, or the display module
CN109192663B (zh) * 2018-09-12 2021-07-16 长江存储科技有限责任公司 制作高压器件与半导体器件的方法
GB201819570D0 (en) * 2018-11-30 2019-01-16 Univ Surrey Multiple-gate transistor
US11133464B2 (en) * 2019-08-20 2021-09-28 4DS Memory, Limited Conductive amorphous oxide contact layers

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