KR101917347B1 - 반도체 에피택셜 웨이퍼 및 그 제조 방법 및 고체 촬상 소자의 제조 방법 - Google Patents

반도체 에피택셜 웨이퍼 및 그 제조 방법 및 고체 촬상 소자의 제조 방법 Download PDF

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KR101917347B1
KR101917347B1 KR1020170026807A KR20170026807A KR101917347B1 KR 101917347 B1 KR101917347 B1 KR 101917347B1 KR 1020170026807 A KR1020170026807 A KR 1020170026807A KR 20170026807 A KR20170026807 A KR 20170026807A KR 101917347 B1 KR101917347 B1 KR 101917347B1
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epitaxial
layer
wafer
carbon
oxygen
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KR1020170026807A
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KR20170101833A (ko
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리오 히로세
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가부시키가이샤 사무코
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26566—Bombardment with radiation with high-energy radiation producing ion implantation of a cluster, e.g. using a gas cluster ion beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
    • H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Electromagnetism (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Recrystallisation Techniques (AREA)
  • Solid State Image Pick-Up Elements (AREA)
KR1020170026807A 2016-02-29 2017-02-28 반도체 에피택셜 웨이퍼 및 그 제조 방법 및 고체 촬상 소자의 제조 방법 KR101917347B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2016037338A JP6504082B2 (ja) 2016-02-29 2016-02-29 半導体エピタキシャルウェーハおよびその製造方法ならびに固体撮像素子の製造方法
JPJP-P-2016-037338 2016-02-29

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KR20170101833A KR20170101833A (ko) 2017-09-06
KR101917347B1 true KR101917347B1 (ko) 2018-11-09

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KR1020170026807A KR101917347B1 (ko) 2016-02-29 2017-02-28 반도체 에피택셜 웨이퍼 및 그 제조 방법 및 고체 촬상 소자의 제조 방법

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JP (1) JP6504082B2 (ja)
KR (1) KR101917347B1 (ja)
CN (1) CN107134404B (ja)
TW (1) TWI652737B (ja)

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JP6327393B1 (ja) * 2017-02-28 2018-05-23 株式会社Sumco エピタキシャルシリコンウェーハの不純物ゲッタリング能力の評価方法及びエピタキシャルシリコンウェーハ
JP6812962B2 (ja) * 2017-12-26 2021-01-13 株式会社Sumco エピタキシャルシリコンウェーハの製造方法
JP6801682B2 (ja) * 2018-02-27 2020-12-16 株式会社Sumco 半導体エピタキシャルウェーハの製造方法及び半導体デバイスの製造方法
JP6874718B2 (ja) 2018-03-01 2021-05-19 株式会社Sumco 半導体エピタキシャルウェーハの製造方法
JP6930459B2 (ja) * 2018-03-01 2021-09-01 株式会社Sumco 半導体エピタキシャルウェーハの製造方法
WO2019167901A1 (ja) * 2018-03-01 2019-09-06 株式会社Sumco エピタキシャルシリコンウェーハの製造方法およびエピタキシャルシリコンウェーハ
JP7067465B2 (ja) * 2018-12-27 2022-05-16 株式会社Sumco 半導体ウェーハの評価方法及び半導体ウェーハの製造方法
JP6988843B2 (ja) 2019-02-22 2022-01-05 株式会社Sumco 半導体エピタキシャルウェーハ及びその製造方法

Citations (1)

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WO2014076933A1 (ja) 2012-11-13 2014-05-22 株式会社Sumco 半導体エピタキシャルウェーハの製造方法、半導体エピタキシャルウェーハ、および固体撮像素子の製造方法

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JP2008103664A (ja) * 2006-09-20 2008-05-01 Fujifilm Corp 裏面照射型撮像素子の製造方法および裏面照射型撮像素子、並びにこれを備えた撮像装置
US7749849B2 (en) * 2007-12-18 2010-07-06 Micron Technology, Inc. Methods of selectively oxidizing semiconductor structures, and structures resulting therefrom
JP2010114409A (ja) * 2008-10-10 2010-05-20 Sony Corp Ｓｏｉ基板とその製造方法、固体撮像装置とその製造方法、および撮像装置
US20100200774A1 (en) * 2009-02-09 2010-08-12 Tel Epion Inc. Multi-sequence film deposition and growth using gas cluster ion beam processing
KR20140009565A (ko) * 2011-05-13 2014-01-22 가부시키가이샤 사무코 반도체 에피택셜 웨이퍼의 제조 방법, 반도체 에피택셜 웨이퍼, 및 고체 촬상 소자의 제조 방법
JP5799935B2 (ja) * 2012-11-13 2015-10-28 株式会社Sumco 半導体エピタキシャルウェーハの製造方法、半導体エピタキシャルウェーハ、および固体撮像素子の製造方法
JP6516957B2 (ja) * 2013-09-04 2019-05-22 株式会社Sumco エピタキシャルウェーハの製造方法及び貼り合わせウェーハの製造方法
JP6056772B2 (ja) * 2014-01-07 2017-01-11 株式会社Sumco エピタキシャルウェーハの製造方法およびエピタキシャルウェーハ

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014076933A1 (ja) 2012-11-13 2014-05-22 株式会社Sumco 半導体エピタキシャルウェーハの製造方法、半導体エピタキシャルウェーハ、および固体撮像素子の製造方法

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JP6504082B2 (ja) 2019-04-24
KR20170101833A (ko) 2017-09-06
TWI652737B (zh) 2019-03-01
CN107134404A (zh) 2017-09-05
TW201742155A (zh) 2017-12-01
CN107134404B (zh) 2020-05-26
JP2017157613A (ja) 2017-09-07

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