KR101913457B1 - 선형 FinFET 구조들을 갖는 회로들 - Google Patents
선형 FinFET 구조들을 갖는 회로들 Download PDFInfo
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- KR101913457B1 KR101913457B1 KR1020147022592A KR20147022592A KR101913457B1 KR 101913457 B1 KR101913457 B1 KR 101913457B1 KR 1020147022592 A KR1020147022592 A KR 1020147022592A KR 20147022592 A KR20147022592 A KR 20147022592A KR 101913457 B1 KR101913457 B1 KR 101913457B1
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- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- General Engineering & Computer Science (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
- Thin Film Transistor (AREA)
- Semiconductor Integrated Circuits (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
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US201261586387P | 2012-01-13 | 2012-01-13 | |
US61/586,387 | 2012-01-13 | ||
US201261589224P | 2012-01-20 | 2012-01-20 | |
US61/589,224 | 2012-01-20 | ||
PCT/US2013/021345 WO2013106799A1 (en) | 2012-01-13 | 2013-01-13 | Circuits with linear finfet structures |
Publications (2)
Publication Number | Publication Date |
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KR20140114424A KR20140114424A (ko) | 2014-09-26 |
KR101913457B1 true KR101913457B1 (ko) | 2018-10-30 |
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Application Number | Title | Priority Date | Filing Date |
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KR1020147022592A KR101913457B1 (ko) | 2012-01-13 | 2013-01-13 | 선형 FinFET 구조들을 갖는 회로들 |
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Country | Link |
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EP (1) | EP2803077A4 (zh) |
JP (3) | JP2015506589A (zh) |
KR (1) | KR101913457B1 (zh) |
CN (2) | CN104303263B (zh) |
AU (4) | AU2013207719B2 (zh) |
SG (2) | SG11201404024YA (zh) |
TW (4) | TWI552307B (zh) |
WO (1) | WO2013106799A1 (zh) |
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CN108630607B (zh) | 2013-08-23 | 2022-04-26 | 株式会社索思未来 | 半导体集成电路装置 |
JP6281572B2 (ja) * | 2013-09-04 | 2018-02-21 | 株式会社ソシオネクスト | 半導体装置 |
JP6449082B2 (ja) | 2014-08-18 | 2019-01-09 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
JP6640965B2 (ja) * | 2014-08-18 | 2020-02-05 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
US9478541B2 (en) * | 2014-09-08 | 2016-10-25 | Qualcomm Incorporated | Half node scaling for vertical structures |
US9607988B2 (en) | 2015-01-30 | 2017-03-28 | Qualcomm Incorporated | Off-center gate cut |
US9640480B2 (en) * | 2015-05-27 | 2017-05-02 | Qualcomm Incorporated | Cross-couple in multi-height sequential cells for uni-directional M1 |
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US10262981B2 (en) * | 2016-04-29 | 2019-04-16 | Taiwan Semiconductor Manufacturing Company, Ltd. | Integrated circuit, system for and method of forming an integrated circuit |
US10366196B2 (en) * | 2016-06-22 | 2019-07-30 | Qualcomm Incorporated | Standard cell architecture for diffusion based on fin count |
US9972571B1 (en) * | 2016-12-15 | 2018-05-15 | Taiwan Semiconductor Manufacturing Co., Ltd. | Logic cell structure and method |
US10186510B2 (en) * | 2017-05-01 | 2019-01-22 | Advanced Micro Devices, Inc. | Vertical gate all around library architecture |
KR102336784B1 (ko) | 2017-06-09 | 2021-12-07 | 삼성전자주식회사 | 반도체 장치 |
WO2019003840A1 (ja) * | 2017-06-27 | 2019-01-03 | 株式会社ソシオネクスト | 半導体集積回路装置 |
US10503863B2 (en) | 2017-08-30 | 2019-12-10 | Taiwan Semiconductor Manufacturing Company, Ltd. | Integrated circuit and method of manufacturing same |
US11271010B2 (en) * | 2017-09-20 | 2022-03-08 | Intel Corporation | Multi version library cell handling and integrated circuit structures fabricated therefrom |
US10468428B1 (en) * | 2018-04-19 | 2019-11-05 | Silicon Storage Technology, Inc. | Split gate non-volatile memory cells and logic devices with FinFET structure, and method of making same |
US10818762B2 (en) * | 2018-05-25 | 2020-10-27 | Advanced Micro Devices, Inc. | Gate contact over active region in cell |
US11017146B2 (en) * | 2018-07-16 | 2021-05-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | Integrated circuit and method of forming the same |
US10878165B2 (en) * | 2018-07-16 | 2020-12-29 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method for generating layout diagram including protruding pin cell regions and semiconductor device based on same |
US11030372B2 (en) | 2018-10-31 | 2021-06-08 | Taiwan Semiconductor Manufacturing Company Ltd. | Method for generating layout diagram including cell having pin patterns and semiconductor device based on same |
US10796061B1 (en) * | 2019-08-29 | 2020-10-06 | Advanced Micro Devices, Inc. | Standard cell and power grid architectures with EUV lithography |
US11862620B2 (en) * | 2020-09-15 | 2024-01-02 | Taiwan Semiconductor Manufacturing Company, Ltd. | Power gating cell structure |
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JP2720783B2 (ja) * | 1993-12-29 | 1998-03-04 | 日本電気株式会社 | 半導体集積回路 |
JP4437565B2 (ja) * | 1998-11-26 | 2010-03-24 | 富士通マイクロエレクトロニクス株式会社 | 半導体集積回路装置、半導体集積回路装置の設計方法、及び、記録媒体 |
JP2001306641A (ja) * | 2000-04-27 | 2001-11-02 | Victor Co Of Japan Ltd | 半導体集積回路の自動配置配線方法 |
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CN107424999A (zh) | 2017-12-01 |
KR20140114424A (ko) | 2014-09-26 |
CN104303263A (zh) | 2015-01-21 |
JP6467476B2 (ja) | 2019-02-13 |
JP2019054297A (ja) | 2019-04-04 |
TW201717355A (zh) | 2017-05-16 |
TWI608593B (zh) | 2017-12-11 |
WO2013106799A1 (en) | 2013-07-18 |
EP2803077A4 (en) | 2015-11-04 |
AU2018200549B2 (en) | 2019-12-05 |
AU2013207719A1 (en) | 2014-07-31 |
TW201803084A (zh) | 2018-01-16 |
JP2017224858A (ja) | 2017-12-21 |
AU2016202229A1 (en) | 2016-05-05 |
AU2020201521A1 (en) | 2020-03-19 |
AU2013207719B2 (en) | 2016-02-25 |
SG11201404024YA (en) | 2014-08-28 |
TWI552307B (zh) | 2016-10-01 |
TW201349451A (zh) | 2013-12-01 |
AU2018200549A1 (en) | 2018-02-15 |
JP2015506589A (ja) | 2015-03-02 |
EP2803077A1 (en) | 2014-11-19 |
AU2016202229B2 (en) | 2018-02-15 |
TWI581403B (zh) | 2017-05-01 |
CN104303263B (zh) | 2016-12-14 |
TW201642440A (zh) | 2016-12-01 |
SG10201605564WA (en) | 2016-09-29 |
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