KR101892796B1 - 기판 액 처리 장치 및 기판 액 처리 방법 - Google Patents

기판 액 처리 장치 및 기판 액 처리 방법 Download PDF

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Publication number
KR101892796B1
KR101892796B1 KR1020157015401A KR20157015401A KR101892796B1 KR 101892796 B1 KR101892796 B1 KR 101892796B1 KR 1020157015401 A KR1020157015401 A KR 1020157015401A KR 20157015401 A KR20157015401 A KR 20157015401A KR 101892796 B1 KR101892796 B1 KR 101892796B1
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South Korea
Prior art keywords
substrate
purge nozzle
wafer
back surface
cleaning liquid
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KR1020157015401A
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Korean (ko)
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KR20150093699A (ko
Inventor
마사히로 후쿠다
아키히로 구보
다로 야마모토
겐지 야다
아츠시 오오코오치
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도쿄엘렉트론가부시키가이샤
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B5/00—Cleaning by methods involving the use of air flow or gas flow
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B5/00—Cleaning by methods involving the use of air flow or gas flow
    • B08B5/02—Cleaning by the force of jets, e.g. blowing-out cavities
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B5/00—Cleaning by methods involving the use of air flow or gas flow
    • B08B5/02—Cleaning by the force of jets, e.g. blowing-out cavities
    • B08B5/023—Cleaning travelling work
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02052—Wet cleaning only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
KR1020157015401A 2012-12-13 2013-12-12 기판 액 처리 장치 및 기판 액 처리 방법 Active KR101892796B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2012271880A JP5973901B2 (ja) 2012-12-13 2012-12-13 基板液処理装置及び基板液処理方法
JPJP-P-2012-271880 2012-12-13
PCT/JP2013/083367 WO2014092160A1 (ja) 2012-12-13 2013-12-12 基板液処理装置及び基板液処理方法

Publications (2)

Publication Number Publication Date
KR20150093699A KR20150093699A (ko) 2015-08-18
KR101892796B1 true KR101892796B1 (ko) 2018-08-28

Family

ID=50934443

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Application Number Title Priority Date Filing Date
KR1020157015401A Active KR101892796B1 (ko) 2012-12-13 2013-12-12 기판 액 처리 장치 및 기판 액 처리 방법

Country Status (6)

Country Link
US (1) US9570327B2 (enExample)
JP (1) JP5973901B2 (enExample)
KR (1) KR101892796B1 (enExample)
CN (1) CN104854681B (enExample)
TW (1) TW201503227A (enExample)
WO (1) WO2014092160A1 (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102000017B1 (ko) * 2017-07-21 2019-07-18 세메스 주식회사 기판 처리 장치 및 기판 처리 방법
KR102162188B1 (ko) * 2018-07-18 2020-10-07 세메스 주식회사 기판 처리 장치 및 방법
JP2020077755A (ja) * 2018-11-07 2020-05-21 株式会社Ｓｃｒｅｅｎホールディングス 処理カップユニットおよび基板処理装置
CN110459493B (zh) * 2019-08-21 2022-03-22 北京北方华创微电子装备有限公司 抽真空腔室及抽真空方法
CN112750719B (zh) * 2019-10-31 2023-12-12 上海微电子装备（集团）股份有限公司 一种硅片表面清洁装置和方法
KR20210101983A (ko) * 2020-02-11 2021-08-19 삼성전자주식회사 웨이퍼 검사 장치 및 이를 이용한 반도체 소자 제조 방법
JP2023102138A (ja) * 2022-01-11 2023-07-24 東京エレクトロン株式会社 塗布膜形成方法、塗布膜形成装置及びプログラム
US12420313B2 (en) * 2022-08-09 2025-09-23 Taiwan Semiconductor Manufacturing Company, Ltd. Onsite cleaning system and method
CN115547812A (zh) * 2022-09-26 2022-12-30 华虹半导体(无锡)有限公司 防止接触孔内粘附层沉积前预清洗时形成水痕的方法
EP4404247A3 (en) * 2022-12-23 2024-08-14 SCREEN Holdings Co., Ltd. Substrate processing device and substrate processing method
CN119334119A (zh) * 2023-07-20 2025-01-21 成都辰显光电有限公司 风干装置

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003007669A (ja) 2001-06-25 2003-01-10 Tokyo Electron Ltd 基板の処理装置
JP2012169572A (ja) 2011-02-17 2012-09-06 Tokyo Electron Ltd 基板洗浄装置

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3171965B2 (ja) * 1992-10-19 2001-06-04 島田理化工業株式会社 スピン洗浄乾燥装置
JPH10172944A (ja) 1996-12-10 1998-06-26 Nittetsu Semiconductor Kk 半導体装置のフォトリソグラフィー工程におけるウエーハ裏面洗浄方法
JP2002359220A (ja) * 2001-05-31 2002-12-13 Tokyo Electron Ltd 基板の処理装置
JP4734063B2 (ja) * 2005-08-30 2011-07-27 東京エレクトロン株式会社 基板洗浄装置及び基板洗浄方法。
JP4607755B2 (ja) * 2005-12-19 2011-01-05 東京エレクトロン株式会社 基板洗浄方法、基板洗浄装置、制御プログラム、およびコンピュータ読取可能な記憶媒体
JP4983565B2 (ja) * 2006-12-20 2012-07-25 東京エレクトロン株式会社 基板洗浄装置、基板洗浄方法及び記憶媒体
JP5016351B2 (ja) * 2007-03-29 2012-09-05 東京エレクトロン株式会社 基板処理システム及び基板洗浄装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003007669A (ja) 2001-06-25 2003-01-10 Tokyo Electron Ltd 基板の処理装置
JP2012169572A (ja) 2011-02-17 2012-09-06 Tokyo Electron Ltd 基板洗浄装置

Also Published As

Publication number Publication date
CN104854681B (zh) 2017-04-19
WO2014092160A1 (ja) 2014-06-19
TW201503227A (zh) 2015-01-16
JP2014120489A (ja) 2014-06-30
TWI560743B (enExample) 2016-12-01
KR20150093699A (ko) 2015-08-18
US9570327B2 (en) 2017-02-14
JP5973901B2 (ja) 2016-08-23
CN104854681A (zh) 2015-08-19
US20150318193A1 (en) 2015-11-05

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