JP5973901B2 - 基板液処理装置及び基板液処理方法 - Google Patents

基板液処理装置及び基板液処理方法 Download PDF

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Publication number
JP5973901B2
JP5973901B2 JP2012271880A JP2012271880A JP5973901B2 JP 5973901 B2 JP5973901 B2 JP 5973901B2 JP 2012271880 A JP2012271880 A JP 2012271880A JP 2012271880 A JP2012271880 A JP 2012271880A JP 5973901 B2 JP5973901 B2 JP 5973901B2
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Japan
Prior art keywords
substrate
back surface
gas
purge nozzle
liquid processing
Prior art date
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Active
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JP2012271880A
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English (en)
Japanese (ja)
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JP2014120489A5 (enExample
JP2014120489A (ja
Inventor
福田　昌弘
昌弘 福田
明広 久保
明広 久保
山本　太郎
太郎 山本
健二 矢田
健二 矢田
厚 大河内
厚 大河内
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
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Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to JP2012271880A priority Critical patent/JP5973901B2/ja
Priority to TW102144808A priority patent/TW201503227A/zh
Priority to US14/651,816 priority patent/US9570327B2/en
Priority to KR1020157015401A priority patent/KR101892796B1/ko
Priority to PCT/JP2013/083367 priority patent/WO2014092160A1/ja
Priority to CN201380065321.3A priority patent/CN104854681B/zh
Publication of JP2014120489A publication Critical patent/JP2014120489A/ja
Publication of JP2014120489A5 publication Critical patent/JP2014120489A5/ja
Application granted granted Critical
Publication of JP5973901B2 publication Critical patent/JP5973901B2/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B5/00—Cleaning by methods involving the use of air flow or gas flow
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B5/00—Cleaning by methods involving the use of air flow or gas flow
    • B08B5/02—Cleaning by the force of jets, e.g. blowing-out cavities
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B5/00—Cleaning by methods involving the use of air flow or gas flow
    • B08B5/02—Cleaning by the force of jets, e.g. blowing-out cavities
    • B08B5/023—Cleaning travelling work
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2012271880A 2012-12-13 2012-12-13 基板液処理装置及び基板液処理方法 Active JP5973901B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2012271880A JP5973901B2 (ja) 2012-12-13 2012-12-13 基板液処理装置及び基板液処理方法
TW102144808A TW201503227A (zh) 2012-12-13 2013-12-06 基板液體處理裝置及基板液體處理方法
KR1020157015401A KR101892796B1 (ko) 2012-12-13 2013-12-12 기판 액 처리 장치 및 기판 액 처리 방법
PCT/JP2013/083367 WO2014092160A1 (ja) 2012-12-13 2013-12-12 基板液処理装置及び基板液処理方法
US14/651,816 US9570327B2 (en) 2012-12-13 2013-12-12 Substrate liquid treatment apparatus and substrate liquid treatment method
CN201380065321.3A CN104854681B (zh) 2012-12-13 2013-12-12 基板液体处理装置和基板液体处理方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012271880A JP5973901B2 (ja) 2012-12-13 2012-12-13 基板液処理装置及び基板液処理方法

Publications (3)

Publication Number Publication Date
JP2014120489A JP2014120489A (ja) 2014-06-30
JP2014120489A5 JP2014120489A5 (enExample) 2015-02-12
JP5973901B2 true JP5973901B2 (ja) 2016-08-23

Family

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Application Number Title Priority Date Filing Date
JP2012271880A Active JP5973901B2 (ja) 2012-12-13 2012-12-13 基板液処理装置及び基板液処理方法

Country Status (6)

Country Link
US (1) US9570327B2 (enExample)
JP (1) JP5973901B2 (enExample)
KR (1) KR101892796B1 (enExample)
CN (1) CN104854681B (enExample)
TW (1) TW201503227A (enExample)
WO (1) WO2014092160A1 (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102000017B1 (ko) * 2017-07-21 2019-07-18 세메스 주식회사 기판 처리 장치 및 기판 처리 방법
KR102162188B1 (ko) * 2018-07-18 2020-10-07 세메스 주식회사 기판 처리 장치 및 방법
JP2020077755A (ja) * 2018-11-07 2020-05-21 株式会社Ｓｃｒｅｅｎホールディングス 処理カップユニットおよび基板処理装置
CN110459493B (zh) * 2019-08-21 2022-03-22 北京北方华创微电子装备有限公司 抽真空腔室及抽真空方法
CN112750719B (zh) * 2019-10-31 2023-12-12 上海微电子装备（集团）股份有限公司 一种硅片表面清洁装置和方法
KR20210101983A (ko) * 2020-02-11 2021-08-19 삼성전자주식회사 웨이퍼 검사 장치 및 이를 이용한 반도체 소자 제조 방법
JP2023102138A (ja) * 2022-01-11 2023-07-24 東京エレクトロン株式会社 塗布膜形成方法、塗布膜形成装置及びプログラム
US12420313B2 (en) * 2022-08-09 2025-09-23 Taiwan Semiconductor Manufacturing Company, Ltd. Onsite cleaning system and method
CN115547812A (zh) * 2022-09-26 2022-12-30 华虹半导体(无锡)有限公司 防止接触孔内粘附层沉积前预清洗时形成水痕的方法
EP4404247A3 (en) * 2022-12-23 2024-08-14 SCREEN Holdings Co., Ltd. Substrate processing device and substrate processing method
CN119334119A (zh) * 2023-07-20 2025-01-21 成都辰显光电有限公司 风干装置

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3171965B2 (ja) * 1992-10-19 2001-06-04 島田理化工業株式会社 スピン洗浄乾燥装置
JPH10172944A (ja) 1996-12-10 1998-06-26 Nittetsu Semiconductor Kk 半導体装置のフォトリソグラフィー工程におけるウエーハ裏面洗浄方法
JP2002359220A (ja) * 2001-05-31 2002-12-13 Tokyo Electron Ltd 基板の処理装置
JP4040270B2 (ja) * 2001-06-25 2008-01-30 東京エレクトロン株式会社 基板の処理装置
JP4734063B2 (ja) * 2005-08-30 2011-07-27 東京エレクトロン株式会社 基板洗浄装置及び基板洗浄方法。
JP4607755B2 (ja) * 2005-12-19 2011-01-05 東京エレクトロン株式会社 基板洗浄方法、基板洗浄装置、制御プログラム、およびコンピュータ読取可能な記憶媒体
JP4983565B2 (ja) * 2006-12-20 2012-07-25 東京エレクトロン株式会社 基板洗浄装置、基板洗浄方法及び記憶媒体
JP5016351B2 (ja) * 2007-03-29 2012-09-05 東京エレクトロン株式会社 基板処理システム及び基板洗浄装置
JP5467583B2 (ja) * 2011-02-17 2014-04-09 東京エレクトロン株式会社 基板洗浄装置

Also Published As

Publication number Publication date
CN104854681B (zh) 2017-04-19
KR101892796B1 (ko) 2018-08-28
WO2014092160A1 (ja) 2014-06-19
TW201503227A (zh) 2015-01-16
JP2014120489A (ja) 2014-06-30
TWI560743B (enExample) 2016-12-01
KR20150093699A (ko) 2015-08-18
US9570327B2 (en) 2017-02-14
CN104854681A (zh) 2015-08-19
US20150318193A1 (en) 2015-11-05

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