KR101884021B1 - 광전 변환 소자, 고체 촬상 소자, 촬상 장치, 및 광전 변환 소자의 제조 방법 - Google Patents

광전 변환 소자, 고체 촬상 소자, 촬상 장치, 및 광전 변환 소자의 제조 방법 Download PDF

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KR101884021B1
KR101884021B1 KR1020110097645A KR20110097645A KR101884021B1 KR 101884021 B1 KR101884021 B1 KR 101884021B1 KR 1020110097645 A KR1020110097645 A KR 1020110097645A KR 20110097645 A KR20110097645 A KR 20110097645A KR 101884021 B1 KR101884021 B1 KR 101884021B1
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electrode
light
receiving layer
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KR20120031922A (ko
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데츠로 미츠이
유키 구라모토
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후지필름 가부시키가이샤
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3434—Deposited materials, e.g. layers characterised by the chemical composition being oxide semiconductor materials
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0676—Oxynitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/308—Oxynitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80—Constructional details
    • H10K30/81—Electrodes
    • H10K30/82—Transparent electrodes, e.g. indium tin oxide [ITO] electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K39/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
    • H10K39/10—Organic photovoltaic [PV] modules; Arrays of single organic PV cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K39/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
    • H10K39/30—Devices controlled by radiation
    • H10K39/32—Organic image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/10—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
    • H10K30/15—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2
    • H10K30/151—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2 the wide bandgap semiconductor comprising titanium oxide, e.g. TiO2
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)
  • Electroluminescent Light Sources (AREA)
KR1020110097645A 2010-09-27 2011-09-27 광전 변환 소자, 고체 촬상 소자, 촬상 장치, 및 광전 변환 소자의 제조 방법 Active KR101884021B1 (ko)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP2010216102 2010-09-27
JPJP-P-2010-216102 2010-09-27
JPJP-P-2011-169650 2011-08-02
JP2011169650 2011-08-02
JP2011209209A JP5677921B2 (ja) 2010-09-27 2011-09-26 光電変換素子の製造方法
JPJP-P-2011-209209 2011-09-26

Publications (2)

Publication Number Publication Date
KR20120031922A KR20120031922A (ko) 2012-04-04
KR101884021B1 true KR101884021B1 (ko) 2018-07-31

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Country Link
US (1) US8994132B2 (https=)
EP (1) EP2434557B1 (https=)
JP (1) JP5677921B2 (https=)
KR (1) KR101884021B1 (https=)
CN (1) CN102420236B (https=)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102491494B1 (ko) 2015-09-25 2023-01-20 삼성전자주식회사 유기 광전 소자용 화합물 및 이를 포함하는 유기 광전 소자 및 이미지 센서
KR102529631B1 (ko) 2015-11-30 2023-05-04 삼성전자주식회사 유기 광전 소자 및 이미지 센서
JP6576235B2 (ja) 2015-12-21 2019-09-18 東京エレクトロン株式会社 Ｄｒａｍキャパシタの下部電極およびその製造方法
JP2017168806A (ja) * 2015-12-21 2017-09-21 ソニー株式会社 撮像素子、固体撮像装置及び電子デバイス
KR102557864B1 (ko) 2016-04-06 2023-07-19 삼성전자주식회사 화합물, 및 이를 포함하는 유기 광전 소자, 이미지 센서 및 전자 장치
US10236461B2 (en) 2016-05-20 2019-03-19 Samsung Electronics Co., Ltd. Organic photoelectronic device and image sensor
KR102605375B1 (ko) 2016-06-29 2023-11-22 삼성전자주식회사 유기 광전 소자 및 이미지 센서
US10522467B2 (en) * 2016-07-06 2019-12-31 Tokyo Electron Limited Ruthenium wiring and manufacturing method thereof
JP6785130B2 (ja) * 2016-07-06 2020-11-18 東京エレクトロン株式会社 ルテニウム配線およびその製造方法
KR102589215B1 (ko) 2016-08-29 2023-10-12 삼성전자주식회사 유기 광전 소자, 이미지 센서 및 전자 장치
KR102764011B1 (ko) * 2016-12-23 2025-02-05 삼성전자주식회사 전자 소자 및 그 제조 방법
US11145822B2 (en) 2017-10-20 2021-10-12 Samsung Electronics Co., Ltd. Compound and photoelectric device, image sensor, and electronic device including the same
JP7312115B2 (ja) 2017-12-28 2023-07-20 ソニーセミコンダクタソリューションズ株式会社 受光素子および電子機器
WO2019176754A1 (ja) * 2018-03-12 2019-09-19 富士フイルム株式会社 光電変換素子、撮像素子、光センサ、化合物

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007273555A (ja) 2006-03-30 2007-10-18 Fujifilm Corp 光電変換素子及び固体撮像素子
JP2008072090A (ja) 2006-08-14 2008-03-27 Fujifilm Corp 光電変換素子及び固体撮像素子
WO2008131313A2 (en) 2007-04-18 2008-10-30 Invisage Technologies, Inc. Materials systems and methods for optoelectronic devices

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4968886A (en) * 1989-08-30 1990-11-06 Texas Instruments Incorporated Infrared detector and method
JPH04213832A (ja) 1990-12-11 1992-08-04 Oki Electric Ind Co Ltd 半田バンプ電極を有する半導体素子
JPH11326038A (ja) 1998-05-20 1999-11-26 Dainippon Printing Co Ltd 光センサーおよびその製造方法
JP4213832B2 (ja) 1999-02-08 2009-01-21 富士フイルム株式会社 有機発光素子材料、それを使用した有機発光素子およびスチリルアミン化合物
WO2000069625A1 (en) * 1999-05-13 2000-11-23 The University Of Southern California Titanium nitride anode for use in organic light emitting devices
JP4126810B2 (ja) 1999-06-25 2008-07-30 富士電機ホールディングス株式会社 薄膜太陽電池の製造装置
JP2005085933A (ja) 2003-09-08 2005-03-31 Matsushita Electric Ind Co Ltd 光センサ及びそれを用いた光論理素子並びに電子デバイス
JP2008072589A (ja) 2006-09-15 2008-03-27 Matsushita Electric Ind Co Ltd カラーイメージセンサ
JP2008072435A (ja) 2006-09-14 2008-03-27 Matsushita Electric Ind Co Ltd イメージセンサ
US20080230123A1 (en) * 2007-03-12 2008-09-25 Fujifilm Corporation Photoelectric conversion element and solid-state imaging device
JP4637196B2 (ja) 2007-03-16 2011-02-23 富士フイルム株式会社 固体撮像素子
JP5087304B2 (ja) * 2007-03-30 2012-12-05 富士フイルム株式会社 固体撮像素子の製造方法
JP5171178B2 (ja) 2007-09-13 2013-03-27 富士フイルム株式会社 イメージセンサ及びその製造方法
JP2009105336A (ja) * 2007-10-25 2009-05-14 Mitsubishi Chemicals Corp 膜の製造方法、有機電子素子の製造方法及びナフタロシアニン膜
JP2009182095A (ja) 2008-01-30 2009-08-13 Fujifilm Corp 光電変換素子及び固体撮像素子
TWI536596B (zh) * 2008-07-21 2016-06-01 量宏科技股份有限公司 用於安定、敏感性光檢測器的材料、製造設備與方法及由其等製成之影像感應器
JP5453758B2 (ja) 2008-10-09 2014-03-26 コニカミノルタ株式会社 有機光電変換素子、太陽電池及び光センサアレイ
KR101064679B1 (ko) * 2009-03-09 2011-09-15 울산대학교 산학협력단 투명전극
JP4802286B2 (ja) * 2009-08-28 2011-10-26 富士フイルム株式会社 光電変換素子及び撮像素子
JP2011071482A (ja) * 2009-08-28 2011-04-07 Fujifilm Corp 固体撮像装置，固体撮像装置の製造方法，デジタルスチルカメラ，デジタルビデオカメラ，携帯電話，内視鏡
WO2012043070A1 (ja) * 2010-09-27 2012-04-05 富士フイルム株式会社 光電変換素子の製造方法、固体撮像素子、撮像装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007273555A (ja) 2006-03-30 2007-10-18 Fujifilm Corp 光電変換素子及び固体撮像素子
JP2008072090A (ja) 2006-08-14 2008-03-27 Fujifilm Corp 光電変換素子及び固体撮像素子
WO2008131313A2 (en) 2007-04-18 2008-10-30 Invisage Technologies, Inc. Materials systems and methods for optoelectronic devices

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Publication number Publication date
KR20120031922A (ko) 2012-04-04
JP2013051383A (ja) 2013-03-14
EP2434557A2 (en) 2012-03-28
US20120074513A1 (en) 2012-03-29
CN102420236B (zh) 2015-11-18
CN102420236A (zh) 2012-04-18
EP2434557B1 (en) 2025-07-02
JP5677921B2 (ja) 2015-02-25
EP2434557A3 (en) 2018-02-21
US8994132B2 (en) 2015-03-31

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