KR101880304B1 - 마스크 블랭크, 전사용 마스크, 전사용 마스크의 제조 방법 및 반도체 디바이스의 제조 방법 - Google Patents

마스크 블랭크, 전사용 마스크, 전사용 마스크의 제조 방법 및 반도체 디바이스의 제조 방법 Download PDF

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KR101880304B1
KR101880304B1 KR1020110114698A KR20110114698A KR101880304B1 KR 101880304 B1 KR101880304 B1 KR 101880304B1 KR 1020110114698 A KR1020110114698 A KR 1020110114698A KR 20110114698 A KR20110114698 A KR 20110114698A KR 101880304 B1 KR101880304 B1 KR 101880304B1
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South Korea
Prior art keywords
light
content
transition metal
atomic
mask
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Korean (ko)
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KR20120069547A (ko
Inventor
아쯔시 고미나또
오사무 노자와
히로유끼 이와시따
마사히로 하시모또
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호야 가부시키가이샤
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G03F1/58—Absorbers, e.g. of opaque materials having two or more different absorber layers, e.g. stacked multilayer absorbers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H10P76/408—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes
    • H10P76/4085—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes characterised by the processes involved to create the masks

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
KR1020110114698A 2010-11-05 2011-11-04 마스크 블랭크, 전사용 마스크, 전사용 마스크의 제조 방법 및 반도체 디바이스의 제조 방법 Active KR101880304B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2010247986 2010-11-05
JPJP-P-2010-247986 2010-11-05

Publications (2)

Publication Number Publication Date
KR20120069547A KR20120069547A (ko) 2012-06-28
KR101880304B1 true KR101880304B1 (ko) 2018-07-19

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KR1020110114698A Active KR101880304B1 (ko) 2010-11-05 2011-11-04 마스크 블랭크, 전사용 마스크, 전사용 마스크의 제조 방법 및 반도체 디바이스의 제조 방법

Country Status (4)

Country Link
US (2) US8822103B2 (https=)
JP (1) JP5900773B2 (https=)
KR (1) KR101880304B1 (https=)
TW (1) TWI545393B (https=)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6389375B2 (ja) * 2013-05-23 2018-09-12 Hoya株式会社 マスクブランクおよび転写用マスク並びにそれらの製造方法
TW201537281A (zh) * 2014-03-18 2015-10-01 Hoya Corp 光罩基底、相偏移光罩及半導體裝置之製造方法
JP6298354B2 (ja) * 2014-05-14 2018-03-20 Hoya株式会社 フォトマスクの製造方法及びフォトマスク基板
JP6394496B2 (ja) * 2014-07-15 2018-09-26 信越化学工業株式会社 バイナリフォトマスクブランク、その製造方法、及びバイナリフォトマスクの製造方法
JP6621626B2 (ja) * 2015-09-18 2019-12-18 Hoya株式会社 マスクブランク、位相シフトマスクおよび半導体デバイスの製造方法
JP6743679B2 (ja) * 2016-03-02 2020-08-19 信越化学工業株式会社 フォトマスクブランク、及びフォトマスクの製造方法
KR102374204B1 (ko) 2016-03-25 2022-03-14 삼성전자주식회사 반도체 장치 제조 방법
JP7062381B2 (ja) * 2017-06-23 2022-05-16 アルバック成膜株式会社 マスクブランクスおよびその製造方法、バイナリマスク
JP7437959B2 (ja) * 2019-03-07 2024-02-26 Hoya株式会社 修正フォトマスク、及び表示装置の製造方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004537758A (ja) * 2001-07-27 2004-12-16 エフ・イ−・アイ・カンパニー 電子ビーム処理
KR20070092683A (ko) * 2006-03-10 2007-09-13 신에쓰 가가꾸 고교 가부시끼가이샤 포토마스크 블랭크 및 포토마스크
JP2007292824A (ja) * 2006-04-21 2007-11-08 Shin Etsu Chem Co Ltd フォトマスクブランク
WO2010113475A1 (ja) * 2009-03-31 2010-10-07 Hoya株式会社 マスクブランクおよび転写用マスク

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000010260A (ja) 1998-06-19 2000-01-14 Seiko Instruments Inc マスク修正装置の黒欠陥修正方法
TWI329779B (en) 2003-07-25 2010-09-01 Shinetsu Chemical Co Photomask blank substrate, photomask blank and photomask
KR100692872B1 (ko) 2004-02-04 2007-03-12 엘지전자 주식회사 마스크 및 그 제조방법과 그를 이용한 유기 전계 발광소자의 제조방법
US8048589B2 (en) 2005-07-30 2011-11-01 Taiwan Semiconductor Manufacturing Co., Ltd. Phase shift photomask performance assurance method
JP4883278B2 (ja) * 2006-03-10 2012-02-22 信越化学工業株式会社 フォトマスクブランク及びフォトマスクの製造方法
JP5535932B2 (ja) * 2008-10-29 2014-07-02 Ｈｏｙａ株式会社 フォトマスクブランク、フォトマスク及びその製造方法
EP2209048B1 (en) * 2009-01-15 2013-09-04 Shin-Etsu Chemical Co., Ltd. Method for manufacturing a photomask, and dry etching method

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004537758A (ja) * 2001-07-27 2004-12-16 エフ・イ−・アイ・カンパニー 電子ビーム処理
KR20070092683A (ko) * 2006-03-10 2007-09-13 신에쓰 가가꾸 고교 가부시끼가이샤 포토마스크 블랭크 및 포토마스크
JP2007292824A (ja) * 2006-04-21 2007-11-08 Shin Etsu Chem Co Ltd フォトマスクブランク
WO2010113475A1 (ja) * 2009-03-31 2010-10-07 Hoya株式会社 マスクブランクおよび転写用マスク

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
일본 공표특허공보 특표2004-537758호(2004.12.16.) 1부. *

Also Published As

Publication number Publication date
JP5900773B2 (ja) 2016-04-06
US8822103B2 (en) 2014-09-02
KR20120069547A (ko) 2012-06-28
TWI545393B (zh) 2016-08-11
US20140322634A1 (en) 2014-10-30
US20120115075A1 (en) 2012-05-10
JP2012113297A (ja) 2012-06-14
US9372393B2 (en) 2016-06-21
TW201237547A (en) 2012-09-16

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