TWI545393B - 光罩基底、轉印用光罩、轉印用光罩之製造方法、及半導體裝置之製造方法 - Google Patents

光罩基底、轉印用光罩、轉印用光罩之製造方法、及半導體裝置之製造方法 Download PDF

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Publication number
TWI545393B
TWI545393B TW100140188A TW100140188A TWI545393B TW I545393 B TWI545393 B TW I545393B TW 100140188 A TW100140188 A TW 100140188A TW 100140188 A TW100140188 A TW 100140188A TW I545393 B TWI545393 B TW I545393B
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TW
Taiwan
Prior art keywords
transition metal
content
light
lower layer
transfer
Prior art date
Application number
TW100140188A
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English (en)
Chinese (zh)
Other versions
TW201237547A (en
Inventor
小湊淳志
野澤順
岩下浩之
橋本雅廣
Original Assignee
Ｈｏｙａ股份有限公司
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Filing date
Publication date
Application filed by Ｈｏｙａ股份有限公司 filed Critical Ｈｏｙａ股份有限公司
Publication of TW201237547A publication Critical patent/TW201237547A/zh
Application granted granted Critical
Publication of TWI545393B publication Critical patent/TWI545393B/zh

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G03F1/58—Absorbers, e.g. of opaque materials having two or more different absorber layers, e.g. stacked multilayer absorbers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H10P76/408—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes
    • H10P76/4085—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes characterised by the processes involved to create the masks

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
TW100140188A 2010-11-05 2011-11-03 光罩基底、轉印用光罩、轉印用光罩之製造方法、及半導體裝置之製造方法 TWI545393B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010247986 2010-11-05

Publications (2)

Publication Number Publication Date
TW201237547A TW201237547A (en) 2012-09-16
TWI545393B true TWI545393B (zh) 2016-08-11

Family

ID=46019948

Family Applications (1)

Application Number Title Priority Date Filing Date
TW100140188A TWI545393B (zh) 2010-11-05 2011-11-03 光罩基底、轉印用光罩、轉印用光罩之製造方法、及半導體裝置之製造方法

Country Status (4)

Country Link
US (2) US8822103B2 (https=)
JP (1) JP5900773B2 (https=)
KR (1) KR101880304B1 (https=)
TW (1) TWI545393B (https=)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6389375B2 (ja) * 2013-05-23 2018-09-12 Hoya株式会社 マスクブランクおよび転写用マスク並びにそれらの製造方法
TW201537281A (zh) * 2014-03-18 2015-10-01 Hoya Corp 光罩基底、相偏移光罩及半導體裝置之製造方法
JP6298354B2 (ja) * 2014-05-14 2018-03-20 Hoya株式会社 フォトマスクの製造方法及びフォトマスク基板
JP6394496B2 (ja) * 2014-07-15 2018-09-26 信越化学工業株式会社 バイナリフォトマスクブランク、その製造方法、及びバイナリフォトマスクの製造方法
JP6621626B2 (ja) * 2015-09-18 2019-12-18 Hoya株式会社 マスクブランク、位相シフトマスクおよび半導体デバイスの製造方法
JP6743679B2 (ja) * 2016-03-02 2020-08-19 信越化学工業株式会社 フォトマスクブランク、及びフォトマスクの製造方法
KR102374204B1 (ko) 2016-03-25 2022-03-14 삼성전자주식회사 반도체 장치 제조 방법
JP7062381B2 (ja) * 2017-06-23 2022-05-16 アルバック成膜株式会社 マスクブランクスおよびその製造方法、バイナリマスク
JP7437959B2 (ja) * 2019-03-07 2024-02-26 Hoya株式会社 修正フォトマスク、及び表示装置の製造方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000010260A (ja) 1998-06-19 2000-01-14 Seiko Instruments Inc マスク修正装置の黒欠陥修正方法
US6753538B2 (en) 2001-07-27 2004-06-22 Fei Company Electron beam processing
TWI329779B (en) 2003-07-25 2010-09-01 Shinetsu Chemical Co Photomask blank substrate, photomask blank and photomask
KR100692872B1 (ko) 2004-02-04 2007-03-12 엘지전자 주식회사 마스크 및 그 제조방법과 그를 이용한 유기 전계 발광소자의 제조방법
US8048589B2 (en) 2005-07-30 2011-11-01 Taiwan Semiconductor Manufacturing Co., Ltd. Phase shift photomask performance assurance method
JP4509050B2 (ja) 2006-03-10 2010-07-21 信越化学工業株式会社 フォトマスクブランク及びフォトマスク
JP4883278B2 (ja) * 2006-03-10 2012-02-22 信越化学工業株式会社 フォトマスクブランク及びフォトマスクの製造方法
JP4737426B2 (ja) * 2006-04-21 2011-08-03 信越化学工業株式会社 フォトマスクブランク
JP5535932B2 (ja) * 2008-10-29 2014-07-02 Ｈｏｙａ株式会社 フォトマスクブランク、フォトマスク及びその製造方法
EP2209048B1 (en) * 2009-01-15 2013-09-04 Shin-Etsu Chemical Co., Ltd. Method for manufacturing a photomask, and dry etching method
KR101793285B1 (ko) * 2009-03-31 2017-11-02 호야 가부시키가이샤 마스크 블랭크 및 전사용 마스크

Also Published As

Publication number Publication date
JP5900773B2 (ja) 2016-04-06
US8822103B2 (en) 2014-09-02
KR20120069547A (ko) 2012-06-28
KR101880304B1 (ko) 2018-07-19
US20140322634A1 (en) 2014-10-30
US20120115075A1 (en) 2012-05-10
JP2012113297A (ja) 2012-06-14
US9372393B2 (en) 2016-06-21
TW201237547A (en) 2012-09-16

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