JP5900773B2 - マスクブランク、転写用マスク、転写用マスクの製造方法、及び半導体デバイスの製造方法 - Google Patents

マスクブランク、転写用マスク、転写用マスクの製造方法、及び半導体デバイスの製造方法 Download PDF

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Publication number
JP5900773B2
JP5900773B2 JP2011241317A JP2011241317A JP5900773B2 JP 5900773 B2 JP5900773 B2 JP 5900773B2 JP 2011241317 A JP2011241317 A JP 2011241317A JP 2011241317 A JP2011241317 A JP 2011241317A JP 5900773 B2 JP5900773 B2 JP 5900773B2
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Japan
Prior art keywords
mask
transition metal
content
film
shielding film
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JP2011241317A
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Japanese (ja)
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JP2012113297A5 (https=
JP2012113297A (ja
Inventor
淳志 小湊
淳志 小湊
野澤　順
順 野澤
浩之 岩下
浩之 岩下
雅広 橋本
雅広 橋本
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Hoya Corp
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Hoya Corp
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Priority to JP2011241317A priority Critical patent/JP5900773B2/ja
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Publication of JP2012113297A5 publication Critical patent/JP2012113297A5/ja
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G03F1/58—Absorbers, e.g. of opaque materials having two or more different absorber layers, e.g. stacked multilayer absorbers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H10P76/408—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes
    • H10P76/4085—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes characterised by the processes involved to create the masks

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
JP2011241317A 2010-11-05 2011-11-02 マスクブランク、転写用マスク、転写用マスクの製造方法、及び半導体デバイスの製造方法 Active JP5900773B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2011241317A JP5900773B2 (ja) 2010-11-05 2011-11-02 マスクブランク、転写用マスク、転写用マスクの製造方法、及び半導体デバイスの製造方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2010247986 2010-11-05
JP2010247986 2010-11-05
JP2011241317A JP5900773B2 (ja) 2010-11-05 2011-11-02 マスクブランク、転写用マスク、転写用マスクの製造方法、及び半導体デバイスの製造方法

Publications (3)

Publication Number Publication Date
JP2012113297A JP2012113297A (ja) 2012-06-14
JP2012113297A5 JP2012113297A5 (https=) 2014-10-09
JP5900773B2 true JP5900773B2 (ja) 2016-04-06

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JP2011241317A Active JP5900773B2 (ja) 2010-11-05 2011-11-02 マスクブランク、転写用マスク、転写用マスクの製造方法、及び半導体デバイスの製造方法

Country Status (4)

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US (2) US8822103B2 (https=)
JP (1) JP5900773B2 (https=)
KR (1) KR101880304B1 (https=)
TW (1) TWI545393B (https=)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6389375B2 (ja) * 2013-05-23 2018-09-12 Hoya株式会社 マスクブランクおよび転写用マスク並びにそれらの製造方法
TW201537281A (zh) * 2014-03-18 2015-10-01 Hoya Corp 光罩基底、相偏移光罩及半導體裝置之製造方法
JP6298354B2 (ja) * 2014-05-14 2018-03-20 Hoya株式会社 フォトマスクの製造方法及びフォトマスク基板
JP6394496B2 (ja) * 2014-07-15 2018-09-26 信越化学工業株式会社 バイナリフォトマスクブランク、その製造方法、及びバイナリフォトマスクの製造方法
JP6621626B2 (ja) * 2015-09-18 2019-12-18 Hoya株式会社 マスクブランク、位相シフトマスクおよび半導体デバイスの製造方法
JP6743679B2 (ja) * 2016-03-02 2020-08-19 信越化学工業株式会社 フォトマスクブランク、及びフォトマスクの製造方法
KR102374204B1 (ko) 2016-03-25 2022-03-14 삼성전자주식회사 반도체 장치 제조 방법
JP7062381B2 (ja) * 2017-06-23 2022-05-16 アルバック成膜株式会社 マスクブランクスおよびその製造方法、バイナリマスク
JP7437959B2 (ja) * 2019-03-07 2024-02-26 Hoya株式会社 修正フォトマスク、及び表示装置の製造方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000010260A (ja) 1998-06-19 2000-01-14 Seiko Instruments Inc マスク修正装置の黒欠陥修正方法
US6753538B2 (en) 2001-07-27 2004-06-22 Fei Company Electron beam processing
TWI329779B (en) 2003-07-25 2010-09-01 Shinetsu Chemical Co Photomask blank substrate, photomask blank and photomask
KR100692872B1 (ko) 2004-02-04 2007-03-12 엘지전자 주식회사 마스크 및 그 제조방법과 그를 이용한 유기 전계 발광소자의 제조방법
US8048589B2 (en) 2005-07-30 2011-11-01 Taiwan Semiconductor Manufacturing Co., Ltd. Phase shift photomask performance assurance method
JP4509050B2 (ja) 2006-03-10 2010-07-21 信越化学工業株式会社 フォトマスクブランク及びフォトマスク
JP4883278B2 (ja) * 2006-03-10 2012-02-22 信越化学工業株式会社 フォトマスクブランク及びフォトマスクの製造方法
JP4737426B2 (ja) * 2006-04-21 2011-08-03 信越化学工業株式会社 フォトマスクブランク
JP5535932B2 (ja) * 2008-10-29 2014-07-02 Ｈｏｙａ株式会社 フォトマスクブランク、フォトマスク及びその製造方法
EP2209048B1 (en) * 2009-01-15 2013-09-04 Shin-Etsu Chemical Co., Ltd. Method for manufacturing a photomask, and dry etching method
KR101793285B1 (ko) * 2009-03-31 2017-11-02 호야 가부시키가이샤 마스크 블랭크 및 전사용 마스크

Also Published As

Publication number Publication date
US8822103B2 (en) 2014-09-02
KR20120069547A (ko) 2012-06-28
TWI545393B (zh) 2016-08-11
KR101880304B1 (ko) 2018-07-19
US20140322634A1 (en) 2014-10-30
US20120115075A1 (en) 2012-05-10
JP2012113297A (ja) 2012-06-14
US9372393B2 (en) 2016-06-21
TW201237547A (en) 2012-09-16

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