KR101874125B1 - 전극을 인쇄하기 위한 조성물 - Google Patents

전극을 인쇄하기 위한 조성물 Download PDF

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Publication number
KR101874125B1
KR101874125B1 KR1020127008776A KR20127008776A KR101874125B1 KR 101874125 B1 KR101874125 B1 KR 101874125B1 KR 1020127008776 A KR1020127008776 A KR 1020127008776A KR 20127008776 A KR20127008776 A KR 20127008776A KR 101874125 B1 KR101874125 B1 KR 101874125B1
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South Korea
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composition
weight
range
oxide
glass frit
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Expired - Fee Related
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KR1020127008776A
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Korean (ko)
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KR20120045067A (ko
Inventor
외르거 프랑크 클라인
외르겐 카크준
슈테판 헤르메스
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바스프 에스이
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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D5/00—Coating compositions, e.g. paints, varnishes or lacquers, characterised by their physical nature or the effects produced; Filling pastes
    • C09D5/24—Electrically-conducting paints
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/02—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/20—Conductive material dispersed in non-conductive organic material
    • H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/20—Conductive material dispersed in non-conductive organic material
    • H01B1/24—Conductive material dispersed in non-conductive organic material the conductive material comprising carbon-silicon compounds, carbon or silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/09—Use of materials for the conductive, e.g. metallic pattern
    • H05K1/092—Dispersed materials, e.g. conductive pastes or inks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H10F77/306—Coatings for devices having potential barriers
    • H10F77/311—Coatings for devices having potential barriers for photovoltaic cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

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  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Dispersion Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Conductive Materials (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Wood Science & Technology (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Photovoltaic Devices (AREA)
  • Parts Printed On Printed Circuit Boards (AREA)
  • Printing Plates And Materials Therefor (AREA)
  • Printing Methods (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
KR1020127008776A 2009-09-04 2010-09-01 전극을 인쇄하기 위한 조성물 Expired - Fee Related KR101874125B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP09169548.6 2009-09-04
EP09169548 2009-09-04
PCT/EP2010/062775 WO2011026852A1 (de) 2009-09-04 2010-09-01 Zusammensetzung zum drucken von elektroden

Publications (2)

Publication Number Publication Date
KR20120045067A KR20120045067A (ko) 2012-05-08
KR101874125B1 true KR101874125B1 (ko) 2018-07-03

Family

ID=43466380

Family Applications (1)

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KR1020127008776A Expired - Fee Related KR101874125B1 (ko) 2009-09-04 2010-09-01 전극을 인쇄하기 위한 조성물

Country Status (10)

Country Link
US (1) US9396833B2 (enExample)
EP (1) EP2474004B1 (enExample)
JP (1) JP5984671B2 (enExample)
KR (1) KR101874125B1 (enExample)
CN (1) CN102576575B (enExample)
ES (1) ES2536696T3 (enExample)
MY (1) MY158807A (enExample)
SG (1) SG178931A1 (enExample)
TW (1) TWI553663B (enExample)
WO (1) WO2011026852A1 (enExample)

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CN102770971B (zh) 2010-02-17 2016-03-30 巴斯夫欧洲公司 在太阳能电池之间形成导电粘接的方法
KR101428131B1 (ko) * 2010-10-28 2014-08-07 엘지이노텍 주식회사 전도성 페이스트 조성물
US9466738B2 (en) * 2010-10-28 2016-10-11 Heracus Precious Metals North America Conshohocken LLC Solar cell metallizations containing metal additive
US8512463B2 (en) 2011-04-05 2013-08-20 E I Du Pont De Nemours And Company Thick film paste containing bismuth-tellurium-oxide and its use in the manufacture of semiconductor devices
EP2607327A1 (en) * 2011-12-23 2013-06-26 Heraeus Precious Metals GmbH & Co. KG Thick-film composition containing antimony oxides and their use in the manufacture of semi-conductor devices
KR20140114881A (ko) * 2012-01-18 2014-09-29 헤레우스 프레셔스 메탈즈 노스 아메리카 콘쇼호켄 엘엘씨 유기 아연 화합물을 포함하는 태양 전지 금속화
WO2013136511A1 (ja) * 2012-03-16 2013-09-19 三洋電機株式会社 太陽電池モジュール
US8845932B2 (en) 2012-04-26 2014-09-30 E I Du Pont De Nemours And Company Thick film paste containing bismuth-tellurium-oxide and its use in the manufacture of semiconductor devices
CN105008034B (zh) * 2012-12-27 2018-10-19 应用空化有限公司 空化装置及其使用方法
KR101587683B1 (ko) * 2013-02-15 2016-01-21 제일모직주식회사 태양전지 전극 형성용 조성물 및 이로부터 제조된 전극
JP6077892B2 (ja) * 2013-03-08 2017-02-08 兵庫県 導体形成用ペースト
KR101596548B1 (ko) * 2013-03-27 2016-02-22 제일모직주식회사 태양전지 전극 형성용 조성물 및 이로부터 제조된 전극
KR101590227B1 (ko) * 2013-06-05 2016-01-29 제일모직주식회사 태양전지 전극　형성용 조성물 및 이로부터 제조된 전극
DE102013107693B4 (de) * 2013-07-18 2021-05-06 Pictiva Displays International Limited Verfahren zum Ausbilden einer Leiterbahnstruktur auf einer Elektrodenfläche eines elektronischen Bauelementes
CN103745763B (zh) * 2014-01-21 2016-04-27 江苏欧耐尔新型材料有限公司 太阳能电池背面电极浆料及其制备方法
CN106537516A (zh) * 2014-07-21 2017-03-22 太阳化学公司 含有有机铋化合物的银糊料和其在太阳能电池中的应用
TWI521548B (zh) * 2014-12-08 2016-02-11 碩禾電子材料股份有限公司 一種含無鉛玻璃熔塊之導電漿（四）
TWI563517B (en) * 2015-05-22 2016-12-21 Chuan Hsi Res Co Ltd Conductive paste composition, conductive structure and method of producing the same
CN104979035B (zh) * 2015-06-26 2017-05-03 武汉优乐光电科技有限公司 一种无铅复合玻璃粘结剂太阳能电池正银浆料
CN106531818B (zh) * 2015-09-15 2017-12-01 比亚迪股份有限公司 太阳能电池正极栅线和太阳能电池及其制作方法
EP3419028B1 (en) * 2016-02-17 2021-01-06 Namics Corporation Conductive paste
CN106057277A (zh) * 2016-06-03 2016-10-26 常州聚和新材料股份有限公司 一种用于形成背钝化太阳电池背面银电极的银浆
CN106653148A (zh) * 2016-12-16 2017-05-10 杭州杭硕新材料科技有限公司 一种晶硅太阳能电池背面电极银浆及其制备方法
CN107634012B (zh) * 2017-09-13 2021-05-07 京东方科技集团股份有限公司 一种封装基板及其制备方法、显示面板、显示装置
US10851257B2 (en) * 2017-11-08 2020-12-01 Eastman Kodak Company Silver and copper nanoparticle composites
DE102018111132A1 (de) 2018-05-09 2019-11-14 Lpkf Laser & Electronics Aktiengesellschaft Verwendung einer Komponente in einer Zusammensetzung, Zusammensetzung für den Lasertransferdruck sowie Lasertransferdruckverfahren
CN109493993B (zh) * 2018-12-07 2020-11-27 浙江中希电子科技有限公司 一种用于晶硅太阳能电池正面电极的银浆料及其制备方法
JP7263771B2 (ja) * 2018-12-28 2023-04-25 凸版印刷株式会社 塗布剤、吐出物及び塗布装置
FR3104600B1 (fr) * 2019-12-11 2022-04-22 Genesink Sa Encre à base de nanoparticules d’argent
KR102889392B1 (ko) * 2019-12-12 2025-11-21 버트 씬 필름스, 엘엘씨 태양광 셀을 위한 페이스트, 태양광 셀, 및 이를 제조하는 방법
IL297544A (en) 2021-10-22 2023-05-01 Wuhan Dr Laser Tech Corp Ltd Sheets and methods for transferring a pattern with a release layer and/or paste mixtures
US20240218194A1 (en) * 2022-12-22 2024-07-04 Trustees Of Boston University 3d printing materials
KR102823138B1 (ko) * 2023-11-24 2025-06-23 (주)창성 니켈 페이스트 조성물, 이를 제조하는 방법 및 이를 포함하는 전극

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JP2008135416A (ja) * 2005-11-11 2008-06-12 Mitsubishi Materials Corp 太陽電池の電極形成用組成物及び該電極の形成方法並びに該形成方法により得られた電極を用いた太陽電池
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Also Published As

Publication number Publication date
MY158807A (en) 2016-11-15
CN102576575A (zh) 2012-07-11
SG178931A1 (en) 2012-04-27
CN102576575B (zh) 2015-11-25
TWI553663B (zh) 2016-10-11
EP2474004B1 (de) 2015-02-25
TW201120913A (en) 2011-06-16
WO2011026852A1 (de) 2011-03-10
ES2536696T3 (es) 2015-05-27
JP5984671B2 (ja) 2016-09-06
US20120161081A1 (en) 2012-06-28
JP2013504152A (ja) 2013-02-04
EP2474004A1 (de) 2012-07-11
US9396833B2 (en) 2016-07-19
KR20120045067A (ko) 2012-05-08

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