KR101850088B1 - 밀리 세컨드 어닐링 （ｄｓａ）에지 보호 - Google Patents

밀리 세컨드 어닐링 （ｄｓａ）에지 보호 Download PDF

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KR101850088B1
KR101850088B1 KR1020177016202A KR20177016202A KR101850088B1 KR 101850088 B1 KR101850088 B1 KR 101850088B1 KR 1020177016202 A KR1020177016202 A KR 1020177016202A KR 20177016202 A KR20177016202 A KR 20177016202A KR 101850088 B1 KR101850088 B1 KR 101850088B1
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substrate
energy
energy breaker
breaker
substrate support
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KR20170072362A (ko
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블랙케 코엘멜
로버트 씨. 맥킨토시
데이비드 디. 엘. 라르망낙
알렉산더 엔. 러너
아브힐아시 제이. 마유르
조셉 유도브스키
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어플라이드 머티어리얼스, 인코포레이티드
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68721—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge clamping, e.g. clamping ring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Recrystallisation Techniques (AREA)
KR1020177016202A 2008-02-15 2009-02-04 밀리 세컨드 어닐링 （ｄｓａ）에지 보호 Active KR101850088B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/032,475 2008-02-15
US12/032,475 US7754518B2 (en) 2008-02-15 2008-02-15 Millisecond annealing (DSA) edge protection
PCT/US2009/033102 WO2009102600A1 (en) 2008-02-15 2009-02-04 Millisecond annealing (dsa) edge protection

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
KR1020167005075A Division KR101749041B1 (ko) 2008-02-15 2009-02-04 밀리 세컨드 어닐링 （ｄｓａ）에지 보호

Publications (2)

Publication Number Publication Date
KR20170072362A KR20170072362A (ko) 2017-06-26
KR101850088B1 true KR101850088B1 (ko) 2018-04-18

Family

ID=40955524

Family Applications (3)

Application Number Title Priority Date Filing Date
KR1020177016202A Active KR101850088B1 (ko) 2008-02-15 2009-02-04 밀리 세컨드 어닐링 （ｄｓａ）에지 보호
KR1020167005075A Active KR101749041B1 (ko) 2008-02-15 2009-02-04 밀리 세컨드 어닐링 （ｄｓａ）에지 보호
KR1020107020693A Expired - Fee Related KR101608865B1 (ko) 2008-02-15 2009-02-04 밀리 세컨드 어닐링 （ｄｓａ）에지 보호

Family Applications After (2)

Application Number Title Priority Date Filing Date
KR1020167005075A Active KR101749041B1 (ko) 2008-02-15 2009-02-04 밀리 세컨드 어닐링 （ｄｓａ）에지 보호
KR1020107020693A Expired - Fee Related KR101608865B1 (ko) 2008-02-15 2009-02-04 밀리 세컨드 어닐링 （ｄｓａ）에지 보호

Country Status (7)

Country Link
US (2) US7754518B2 (enExample)
EP (1) EP2248150A4 (enExample)
JP (1) JP5451643B2 (enExample)
KR (3) KR101850088B1 (enExample)
CN (2) CN101946302B (enExample)
TW (2) TWI545676B (enExample)
WO (1) WO2009102600A1 (enExample)

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CN104736011B (zh) * 2013-12-27 2017-05-31 Ykk株式会社 增强膜粘着装置及具有可分离式嵌插件的拉链
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CN108292617B (zh) * 2015-12-30 2022-01-04 玛特森技术公司 用于毫秒退火系统的室壁加热
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JP6618876B2 (ja) * 2016-09-26 2019-12-11 株式会社ニューフレアテクノロジー 基板処理装置、搬送方法およびサセプタ
CN106571321B (zh) * 2016-11-18 2019-12-06 中国电子科技集团公司第四十八研究所 一种用于快速热处理设备的载片台
US10704147B2 (en) * 2016-12-03 2020-07-07 Applied Materials, Inc. Process kit design for in-chamber heater and wafer rotating mechanism
US10535538B2 (en) * 2017-01-26 2020-01-14 Gary Hillman System and method for heat treatment of substrates
KR102401722B1 (ko) 2017-11-21 2022-05-24 램 리써치 코포레이션 하단 링 및 중간 에지 링
CN110376847B (zh) * 2018-04-12 2021-01-01 上海微电子装备（集团）股份有限公司 一种基底边缘保护环单元、光刻设备及保护方法
CN111052344B (zh) 2018-08-13 2024-04-02 朗姆研究公司 边缘环组件
CN119725065A (zh) * 2019-05-14 2025-03-28 玛特森技术公司 末端执行器和用于处理工件的系统
CN112786510A (zh) * 2019-11-04 2021-05-11 北京华卓精科科技股份有限公司 激光退火系统和激光退火方法
US12444579B2 (en) 2020-03-23 2025-10-14 Lam Research Corporation Mid-ring erosion compensation in substrate processing systems
CN111508890B (zh) * 2020-04-28 2023-12-22 北京北方华创微电子装备有限公司 一种晶片装卸机构和半导体工艺设备
CN112670206A (zh) * 2020-12-21 2021-04-16 上海华力集成电路制造有限公司 一种改善晶圆破片的激光退火设备及其使用方法
CN115547876A (zh) * 2021-06-30 2022-12-30 上海微电子装备（集团）股份有限公司 基板边缘保护装置及半导体机台
US12486576B2 (en) * 2021-07-01 2025-12-02 Applied Materials, Inc. Shadow ring lift to improve wafer edge performance
KR20230041917A (ko) * 2021-09-17 2023-03-27 삼성전자주식회사 건식 식각 장치 및 이를 이용한 웨이퍼 식각 시스템
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JP2000183141A (ja) * 1998-11-25 2000-06-30 Applied Materials Inc シャド―リング及びチャンバ―内のシャド―リングを支持するためのガイド
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Also Published As

Publication number Publication date
KR20170072362A (ko) 2017-06-26
KR101608865B1 (ko) 2016-04-04
KR101749041B1 (ko) 2017-06-20
CN105514001B (zh) 2018-03-09
TW201001588A (en) 2010-01-01
US20100273334A1 (en) 2010-10-28
US7754518B2 (en) 2010-07-13
EP2248150A4 (en) 2012-03-07
JP5451643B2 (ja) 2014-03-26
KR20160030321A (ko) 2016-03-16
US7923280B2 (en) 2011-04-12
US20090209112A1 (en) 2009-08-20
TW201507050A (zh) 2015-02-16
CN105514001A (zh) 2016-04-20
EP2248150A1 (en) 2010-11-10
TWI463589B (zh) 2014-12-01
WO2009102600A1 (en) 2009-08-20
CN101946302B (zh) 2016-02-10
KR20100123724A (ko) 2010-11-24
TWI545676B (zh) 2016-08-11
JP2011512674A (ja) 2011-04-21
CN101946302A (zh) 2011-01-12

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