CN101946302B - 毫秒退火(dsa)的边缘保护 - Google Patents

毫秒退火(dsa)的边缘保护 Download PDF

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Publication number
CN101946302B
CN101946302B CN200980105096.5A CN200980105096A CN101946302B CN 101946302 B CN101946302 B CN 101946302B CN 200980105096 A CN200980105096 A CN 200980105096A CN 101946302 B CN101946302 B CN 101946302B
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substrate
energy
substrate support
blocker
equipment
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CN101946302A (zh
Inventor
布莱克·凯尔梅尔
罗伯特·C·麦金托什
戴维·D·L·拉马尼亚克
亚历山大·N·勒纳
阿布拉什·J·马约尔
约瑟夫·尤多夫斯凯
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Applied Materials Inc
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Applied Materials Inc
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67098Apparatus for thermal treatment
    • H01L21/67115Apparatus for thermal treatment mainly by radiation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67098Apparatus for thermal treatment
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68721Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge clamping, e.g. clamping ring
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68735Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68742Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26Bombardment with radiation
    • H01L21/263Bombardment with radiation with high-energy radiation
    • H01L21/268Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Recrystallisation Techniques (AREA)
CN200980105096.5A 2008-02-15 2009-02-04 毫秒退火(dsa)的边缘保护 Active CN101946302B (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201610031475.6A CN105514001B (zh) 2008-02-15 2009-02-04 毫秒退火(dsa)的边缘保护

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/032,475 2008-02-15
US12/032,475 US7754518B2 (en) 2008-02-15 2008-02-15 Millisecond annealing (DSA) edge protection
PCT/US2009/033102 WO2009102600A1 (en) 2008-02-15 2009-02-04 Millisecond annealing (dsa) edge protection

Related Child Applications (1)

Application Number Title Priority Date Filing Date
CN201610031475.6A Division CN105514001B (zh) 2008-02-15 2009-02-04 毫秒退火(dsa)的边缘保护

Publications (2)

Publication Number Publication Date
CN101946302A CN101946302A (zh) 2011-01-12
CN101946302B true CN101946302B (zh) 2016-02-10

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Application Number Title Priority Date Filing Date
CN200980105096.5A Active CN101946302B (zh) 2008-02-15 2009-02-04 毫秒退火(dsa)的边缘保护
CN201610031475.6A Active CN105514001B (zh) 2008-02-15 2009-02-04 毫秒退火(dsa)的边缘保护

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Country Status (7)

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US (2) US7754518B2 (enExample)
EP (1) EP2248150A4 (enExample)
JP (1) JP5451643B2 (enExample)
KR (3) KR101850088B1 (enExample)
CN (2) CN101946302B (enExample)
TW (2) TWI545676B (enExample)
WO (1) WO2009102600A1 (enExample)

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US20150187616A1 (en) * 2013-12-31 2015-07-02 Taiwan Semiconductor Manufacturing Co., Ltd. Mechanisms of adjustable laser beam for laser spike annealing
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CN108292617B (zh) * 2015-12-30 2022-01-04 玛特森技术公司 用于毫秒退火系统的室壁加热
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JP6618876B2 (ja) * 2016-09-26 2019-12-11 株式会社ニューフレアテクノロジー 基板処理装置、搬送方法およびサセプタ
CN106571321B (zh) * 2016-11-18 2019-12-06 中国电子科技集团公司第四十八研究所 一种用于快速热处理设备的载片台
US10704147B2 (en) * 2016-12-03 2020-07-07 Applied Materials, Inc. Process kit design for in-chamber heater and wafer rotating mechanism
US10535538B2 (en) * 2017-01-26 2020-01-14 Gary Hillman System and method for heat treatment of substrates
KR102401722B1 (ko) 2017-11-21 2022-05-24 램 리써치 코포레이션 하단 링 및 중간 에지 링
CN110376847B (zh) * 2018-04-12 2021-01-01 上海微电子装备(集团)股份有限公司 一种基底边缘保护环单元、光刻设备及保护方法
CN111052344B (zh) 2018-08-13 2024-04-02 朗姆研究公司 边缘环组件
CN119725065A (zh) * 2019-05-14 2025-03-28 玛特森技术公司 末端执行器和用于处理工件的系统
CN112786510A (zh) * 2019-11-04 2021-05-11 北京华卓精科科技股份有限公司 激光退火系统和激光退火方法
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CN115547876A (zh) * 2021-06-30 2022-12-30 上海微电子装备(集团)股份有限公司 基板边缘保护装置及半导体机台
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Also Published As

Publication number Publication date
KR20170072362A (ko) 2017-06-26
KR101608865B1 (ko) 2016-04-04
KR101749041B1 (ko) 2017-06-20
CN105514001B (zh) 2018-03-09
TW201001588A (en) 2010-01-01
US20100273334A1 (en) 2010-10-28
US7754518B2 (en) 2010-07-13
EP2248150A4 (en) 2012-03-07
JP5451643B2 (ja) 2014-03-26
KR20160030321A (ko) 2016-03-16
US7923280B2 (en) 2011-04-12
US20090209112A1 (en) 2009-08-20
TW201507050A (zh) 2015-02-16
CN105514001A (zh) 2016-04-20
KR101850088B1 (ko) 2018-04-18
EP2248150A1 (en) 2010-11-10
TWI463589B (zh) 2014-12-01
WO2009102600A1 (en) 2009-08-20
KR20100123724A (ko) 2010-11-24
TWI545676B (zh) 2016-08-11
JP2011512674A (ja) 2011-04-21
CN101946302A (zh) 2011-01-12

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