JP5451643B2 - ミリ秒アニーリング（ｄｓａ）の縁部保護 - Google Patents

ミリ秒アニーリング（ｄｓａ）の縁部保護 Download PDF

Info

Publication number
JP5451643B2
JP5451643B2 JP2010546828A JP2010546828A JP5451643B2 JP 5451643 B2 JP5451643 B2 JP 5451643B2 JP 2010546828 A JP2010546828 A JP 2010546828A JP 2010546828 A JP2010546828 A JP 2010546828A JP 5451643 B2 JP5451643 B2 JP 5451643B2
Authority
JP
Japan
Prior art keywords
substrate
energy
breaker
substrate support
support
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2010546828A
Other languages
English (en)
Japanese (ja)
Other versions
JP2011512674A (ja
JP2011512674A5 (enExample
Inventor
ブレーク コールメル，
ロバート シー． マッキントッシュ，
ダーヴィッド デー． エル． ラルマニャク，
アレクサンダー エヌ． ラーナー，
アブヒラッシュ ジェイ． マユール，
ジョゼフ ユドフスキー，
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of JP2011512674A publication Critical patent/JP2011512674A/ja
Publication of JP2011512674A5 publication Critical patent/JP2011512674A5/ja
Application granted granted Critical
Publication of JP5451643B2 publication Critical patent/JP5451643B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68721—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge clamping, e.g. clamping ring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Recrystallisation Techniques (AREA)
JP2010546828A 2008-02-15 2009-02-04 ミリ秒アニーリング（ｄｓａ）の縁部保護 Expired - Fee Related JP5451643B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/032,475 2008-02-15
US12/032,475 US7754518B2 (en) 2008-02-15 2008-02-15 Millisecond annealing (DSA) edge protection
PCT/US2009/033102 WO2009102600A1 (en) 2008-02-15 2009-02-04 Millisecond annealing (dsa) edge protection

Publications (3)

Publication Number Publication Date
JP2011512674A JP2011512674A (ja) 2011-04-21
JP2011512674A5 JP2011512674A5 (enExample) 2012-03-22
JP5451643B2 true JP5451643B2 (ja) 2014-03-26

Family

ID=40955524

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010546828A Expired - Fee Related JP5451643B2 (ja) 2008-02-15 2009-02-04 ミリ秒アニーリング（ｄｓａ）の縁部保護

Country Status (7)

Country Link
US (2) US7754518B2 (enExample)
EP (1) EP2248150A4 (enExample)
JP (1) JP5451643B2 (enExample)
KR (3) KR101608865B1 (enExample)
CN (2) CN105514001B (enExample)
TW (2) TWI545676B (enExample)
WO (1) WO2009102600A1 (enExample)

Families Citing this family (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101840322B1 (ko) * 2009-12-31 2018-03-20 어플라이드 머티어리얼스, 인코포레이티드 웨이퍼 엣지 및 경사면 증착을 수정하기 위한 쉐도우 링
NL2009689A (en) * 2011-12-01 2013-06-05 Asml Netherlands Bv Support, lithographic apparatus and device manufacturing method.
US9005877B2 (en) 2012-05-15 2015-04-14 Tokyo Electron Limited Method of forming patterns using block copolymers and articles thereof
KR102003334B1 (ko) 2012-09-04 2019-07-24 삼성전자주식회사 패턴 형성 방법
US8980538B2 (en) 2013-03-14 2015-03-17 Tokyo Electron Limited Chemi-epitaxy in directed self-assembly applications using photo-decomposable agents
US9147574B2 (en) 2013-03-14 2015-09-29 Tokyo Electron Limited Topography minimization of neutral layer overcoats in directed self-assembly applications
US8975009B2 (en) 2013-03-14 2015-03-10 Tokyo Electron Limited Track processing to remove organic films in directed self-assembly chemo-epitaxy applications
US20140273534A1 (en) 2013-03-14 2014-09-18 Tokyo Electron Limited Integration of absorption based heating bake methods into a photolithography track system
US9136110B2 (en) 2013-03-15 2015-09-15 Tokyo Electron Limited Multi-step bake apparatus and method for directed self-assembly lithography control
KR102394994B1 (ko) 2013-09-04 2022-05-04 도쿄엘렉트론가부시키가이샤 유도 자기 조립용 화학 템플릿을 생성하기 위한 경화 포토레지스트의 자외선을 이용한 박리
US9793137B2 (en) 2013-10-20 2017-10-17 Tokyo Electron Limited Use of grapho-epitaxial directed self-assembly applications to precisely cut logic lines
US9349604B2 (en) 2013-10-20 2016-05-24 Tokyo Electron Limited Use of topography to direct assembly of block copolymers in grapho-epitaxial applications
CN104733344A (zh) * 2013-12-18 2015-06-24 北京北方微电子基地设备工艺研究中心有限责任公司 一种边沿保护装置及等离子体加工设备
CN104736011B (zh) * 2013-12-27 2017-05-31 Ykk株式会社 增强膜粘着装置及具有可分离式嵌插件的拉链
US20150187616A1 (en) * 2013-12-31 2015-07-02 Taiwan Semiconductor Manufacturing Co., Ltd. Mechanisms of adjustable laser beam for laser spike annealing
US9410249B2 (en) * 2014-05-15 2016-08-09 Infineon Technologies Ag Wafer releasing
US10892180B2 (en) * 2014-06-02 2021-01-12 Applied Materials, Inc. Lift pin assembly
US10658222B2 (en) * 2015-01-16 2020-05-19 Lam Research Corporation Moveable edge coupling ring for edge process control during semiconductor wafer processing
CN105988298B (zh) * 2015-02-02 2018-06-01 上海微电子装备（集团）股份有限公司 硅片边缘保护装置及保护方法
US10957563B2 (en) * 2015-12-30 2021-03-23 Mattson Technology, Inc. Chamber wall heating for a millisecond anneal system
US10651015B2 (en) 2016-02-12 2020-05-12 Lam Research Corporation Variable depth edge ring for etch uniformity control
US9947597B2 (en) 2016-03-31 2018-04-17 Tokyo Electron Limited Defectivity metrology during DSA patterning
JP6618876B2 (ja) * 2016-09-26 2019-12-11 株式会社ニューフレアテクノロジー 基板処理装置、搬送方法およびサセプタ
CN106571321B (zh) * 2016-11-18 2019-12-06 中国电子科技集团公司第四十八研究所 一种用于快速热处理设备的载片台
US10704147B2 (en) * 2016-12-03 2020-07-07 Applied Materials, Inc. Process kit design for in-chamber heater and wafer rotating mechanism
US10535538B2 (en) * 2017-01-26 2020-01-14 Gary Hillman System and method for heat treatment of substrates
CN118380375A (zh) 2017-11-21 2024-07-23 朗姆研究公司 底部边缘环和中部边缘环
CN110376847B (zh) * 2018-04-12 2021-01-01 上海微电子装备（集团）股份有限公司 一种基底边缘保护环单元、光刻设备及保护方法
CN114743854B (zh) 2019-05-14 2025-02-25 玛特森技术公司 末端执行器和用于处理工件的系统
CN112786510A (zh) * 2019-11-04 2021-05-11 北京华卓精科科技股份有限公司 激光退火系统和激光退火方法
JP7466686B2 (ja) 2020-03-23 2024-04-12 ラム リサーチ コーポレーション 基板処理システムにおける中間リング腐食補償
CN111508890B (zh) * 2020-04-28 2023-12-22 北京北方华创微电子装备有限公司 一种晶片装卸机构和半导体工艺设备
CN112670206A (zh) * 2020-12-21 2021-04-16 上海华力集成电路制造有限公司 一种改善晶圆破片的激光退火设备及其使用方法
CN115547876A (zh) * 2021-06-30 2022-12-30 上海微电子装备（集团）股份有限公司 基板边缘保护装置及半导体机台
US12486576B2 (en) * 2021-07-01 2025-12-02 Applied Materials, Inc. Shadow ring lift to improve wafer edge performance
KR20230041917A (ko) * 2021-09-17 2023-03-27 삼성전자주식회사 건식 식각 장치 및 이를 이용한 웨이퍼 식각 시스템
US20230124884A1 (en) * 2021-10-15 2023-04-20 Semes Co., Ltd. Apparatus for lifting substrate and apparatus for processing substrate
US20250038040A1 (en) * 2023-07-27 2025-01-30 Applied Materials, Inc. Lift frames for central heating, and related processing chambers and methods

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5079112A (en) * 1989-08-07 1992-01-07 At&T Bell Laboratories Device manufacture involving lithographic processing
US5146092A (en) * 1990-05-23 1992-09-08 Ntc Technology, Inc. Gas analysis transducers with electromagnetic energy detector units
US5304248A (en) * 1990-12-05 1994-04-19 Applied Materials, Inc. Passive shield for CVD wafer processing which provides frontside edge exclusion and prevents backside depositions
JP2601179Y2 (ja) 1993-11-29 1999-11-08 日新電機株式会社 基板保持装置
JP3251875B2 (ja) * 1996-05-10 2002-01-28 株式会社東芝 荷電粒子ビーム露光装置
US6168668B1 (en) * 1998-11-25 2001-01-02 Applied Materials, Inc. Shadow ring and guide for supporting the shadow ring in a chamber
US6589352B1 (en) * 1999-12-10 2003-07-08 Applied Materials, Inc. Self aligning non contact shadow ring process kit
US6627846B1 (en) 1999-12-16 2003-09-30 Oramir Semiconductor Equipment Ltd. Laser-driven cleaning using reactive gases
DE10226603A1 (de) 2002-06-14 2004-01-08 Infineon Technologies Ag Verfahren zum Strukturieren einer Siliziumschicht sowie dessen Verwendung zur Herstellung einer integrierten Halbleiterschaltung
US7166200B2 (en) * 2002-09-30 2007-01-23 Tokyo Electron Limited Method and apparatus for an improved upper electrode plate in a plasma processing system
US6835914B2 (en) 2002-11-05 2004-12-28 Mattson Technology, Inc. Apparatus and method for reducing stray light in substrate processing chambers
CN1322563C (zh) * 2004-01-18 2007-06-20 统宝光电股份有限公司 制备多晶硅膜层的激光退火装置及形成多晶硅膜层的方法
JP3910603B2 (ja) * 2004-06-07 2007-04-25 株式会社東芝 熱処理装置、熱処理方法及び半導体装置の製造方法
US20060286807A1 (en) 2005-06-16 2006-12-21 Jack Hwang Use of active temperature control to provide emmisivity independent wafer temperature
US7368303B2 (en) 2004-10-20 2008-05-06 Taiwan Semiconductor Manufacturing Company, Ltd. Method for temperature control in a rapid thermal processing system
US7277213B2 (en) * 2004-12-03 2007-10-02 Microvision, Inc. Aperture plate and related system and method
US20070012557A1 (en) * 2005-07-13 2007-01-18 Applied Materials, Inc Low voltage sputtering for large area substrates
US20070221640A1 (en) 2006-03-08 2007-09-27 Dean Jennings Apparatus for thermal processing structures formed on a substrate

Also Published As

Publication number Publication date
KR101749041B1 (ko) 2017-06-20
US20090209112A1 (en) 2009-08-20
KR20170072362A (ko) 2017-06-26
EP2248150A4 (en) 2012-03-07
US7923280B2 (en) 2011-04-12
US20100273334A1 (en) 2010-10-28
TWI463589B (zh) 2014-12-01
KR101608865B1 (ko) 2016-04-04
TW201507050A (zh) 2015-02-16
EP2248150A1 (en) 2010-11-10
CN101946302B (zh) 2016-02-10
TWI545676B (zh) 2016-08-11
KR101850088B1 (ko) 2018-04-18
KR20160030321A (ko) 2016-03-16
WO2009102600A1 (en) 2009-08-20
CN105514001B (zh) 2018-03-09
CN105514001A (zh) 2016-04-20
CN101946302A (zh) 2011-01-12
US7754518B2 (en) 2010-07-13
TW201001588A (en) 2010-01-01
JP2011512674A (ja) 2011-04-21
KR20100123724A (ko) 2010-11-24

Similar Documents

Publication Publication Date Title
JP5451643B2 (ja) ミリ秒アニーリング（ｄｓａ）の縁部保護
US8434937B2 (en) Method and apparatus for detecting the substrate temperature in a laser anneal system
KR102186337B1 (ko) 기판 처리 장치
CN107924825B (zh) 半导体器件的制造方法、衬底处理装置及记录介质
CN107924826A (zh) 半导体装置的制造方法、基板处理装置以及程序
JP5008562B2 (ja) 基板処理方法および基板処理装置
KR102535623B1 (ko) 고온계 배경 제거
KR20140116797A (ko) 마이크로파 가열 처리 방법
CN102097314A (zh) 一种对冷却过程进行精确控制的激光热处理装置和方法
CN116013771A (zh) 改善晶圆表面平整度的推阱方法
US20160126119A1 (en) Laser annealing apparatus
JP4466942B2 (ja) 熱処理装置
CN108598015B (zh) 热处理设备及其热处理方法
JP2002252180A (ja) 基板の熱処理装置
KR102837635B1 (ko) 마이크로파 열처리 장치에서의 열처리 온도 제어 방법
KR200158368Y1 (ko) 등방성 건식식각장치
KR102883117B1 (ko) 웨이퍼 디본딩 방법
JP2002025990A (ja) 半導体デバイスの製造装置および半導体デバイスの製造方法
JP2522544B2 (ja) 縦型熱処理炉
CN102157347A (zh) 一种高产率的激光热处理装置和方法
JP2008294397A (ja) 半導体装置の製造方法
KR20060082486A (ko) 기판 냉각 장치
KR20040107933A (ko) 웨이퍼 이송로봇용 블레이드

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20120202

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20120202

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20130807

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20130813

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20131108

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20131203

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20131226

R150 Certificate of patent or registration of utility model

Ref document number: 5451643

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees