JP2011512674A - ミリ秒アニーリング(dsa)の縁部保護 - Google Patents
ミリ秒アニーリング(dsa)の縁部保護 Download PDFInfo
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- JP2011512674A JP2011512674A JP2010546828A JP2010546828A JP2011512674A JP 2011512674 A JP2011512674 A JP 2011512674A JP 2010546828 A JP2010546828 A JP 2010546828A JP 2010546828 A JP2010546828 A JP 2010546828A JP 2011512674 A JP2011512674 A JP 2011512674A
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- 238000000137 annealing Methods 0.000 title description 11
- 239000000758 substrate Substances 0.000 claims abstract description 198
- 238000012545 processing Methods 0.000 claims abstract description 47
- 238000000034 method Methods 0.000 claims abstract description 42
- 230000001939 inductive effect Effects 0.000 claims abstract description 4
- 230000007246 mechanism Effects 0.000 claims description 8
- 230000000903 blocking effect Effects 0.000 claims description 2
- 230000002093 peripheral effect Effects 0.000 claims 1
- 230000008646 thermal stress Effects 0.000 abstract description 7
- 238000013459 approach Methods 0.000 abstract description 2
- 230000008569 process Effects 0.000 description 24
- 238000010438 heat treatment Methods 0.000 description 7
- 239000000463 material Substances 0.000 description 6
- 230000005855 radiation Effects 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000005670 electromagnetic radiation Effects 0.000 description 2
- 238000007373 indentation Methods 0.000 description 2
- 238000003780 insertion Methods 0.000 description 2
- 230000037431 insertion Effects 0.000 description 2
- 238000005224 laser annealing Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000009529 body temperature measurement Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 230000008642 heat stress Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000013011 mating Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000007669 thermal treatment Methods 0.000 description 1
- 238000013519 translation Methods 0.000 description 1
- 230000032258 transport Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68721—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge clamping, e.g. clamping ring
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Recrystallisation Techniques (AREA)
Abstract
Description
Claims (15)
- 処理チャンバ内で基板を処理する装置であって、
処理するために基板を位置決めするように構成された基板支持部と、
前記基板支持部の方へ電磁エネルギーを誘導するように構成されたエネルギー源と、
前記基板の中心部分を前記電磁エネルギーに露出させながら、前記電磁エネルギーの少なくとも一部分が前記基板の周辺部分に到達するのを遮断するように構成された1つまたは複数のエネルギー遮断器とを含む、装置。 - 前記エネルギー遮断器の少なくとも1つがシャドーリングである、請求項1に記載の装置。
- 前記シャドーリングが、持上げ機構に係合する1つまたは複数のタブを含む、請求項2に記載の装置。
- 前記タブの少なくとも1つが、持上げ機構に係合する1つまたは複数の凹部を有する、請求項3に記載の装置。
- 前記シャドーリングが、前記基板支持部上のピンと嵌合する1つまたは複数の凹部を含む、請求項2に記載の装置。
- 前記シャドーリングの一部分が、前記基板支持部より上へ延び、前記基板支持部から隔置される、請求項2に記載の装置。
- 前記シャドーリングが、前記基板支持部上の1つまたは複数の凹部と嵌合する1つまたは複数のピンを含む、請求項2に記載の装置。
- 前記基板支持部が縁部リングである、請求項2に記載の装置。
- 前記持上げ機構が、前記タブと係合するように構成された1つまたは複数のリフトピンを含む、請求項3に記載の装置。
- 前記エネルギー遮断器の少なくとも1つが、前記基板支持部上に位置する、請求項1に記載の装置。
- 処理チャンバ内で基板を処理する方法であって、
基板支持部を使用して前記処理チャンバ内に前記基板を位置決めするステップと、
前記基板の少なくとも一部分の方へ電磁エネルギーを誘導するステップと、
前記基板の中心を前記電磁エネルギーに露出させながら、前記電磁エネルギーの少なくとも一部分が前記基板の縁部に当たるのを遮断するステップとを含む、方法。 - 前記電磁エネルギーの少なくとも一部分を遮断するステップが、1つまたは複数のエネルギー遮断器を前記基板の近傍に位置決めするステップを含む、請求項11に記載の方法。
- 前記処理チャンバ内に前記基板を位置決めするステップが、前記基板支持部と前記1つまたは複数のエネルギー遮断器を係合させるステップを含む、請求項12に記載の方法。
- 前記基板支持部と前記1つまたは複数のエネルギー遮断器を係合させるステップが、前記エネルギー遮断器に接触するように前記基板支持部を上げるステップと、前記エネルギー遮断器を持ち上げるステップとを含む、請求項13に記載の方法。
- 1つまたは複数のエネルギー遮断器を前記基板の近傍に位置決めするステップが、整合点を使用して前記エネルギー遮断器と前記基板支持部を整合させるステップを含む、請求項12に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/032,475 | 2008-02-15 | ||
US12/032,475 US7754518B2 (en) | 2008-02-15 | 2008-02-15 | Millisecond annealing (DSA) edge protection |
PCT/US2009/033102 WO2009102600A1 (en) | 2008-02-15 | 2009-02-04 | Millisecond annealing (dsa) edge protection |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2011512674A true JP2011512674A (ja) | 2011-04-21 |
JP2011512674A5 JP2011512674A5 (ja) | 2012-03-22 |
JP5451643B2 JP5451643B2 (ja) | 2014-03-26 |
Family
ID=40955524
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010546828A Expired - Fee Related JP5451643B2 (ja) | 2008-02-15 | 2009-02-04 | ミリ秒アニーリング(dsa)の縁部保護 |
Country Status (7)
Country | Link |
---|---|
US (2) | US7754518B2 (ja) |
EP (1) | EP2248150A4 (ja) |
JP (1) | JP5451643B2 (ja) |
KR (3) | KR101749041B1 (ja) |
CN (2) | CN101946302B (ja) |
TW (2) | TWI463589B (ja) |
WO (1) | WO2009102600A1 (ja) |
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KR102003334B1 (ko) | 2012-09-04 | 2019-07-24 | 삼성전자주식회사 | 패턴 형성 방법 |
US20140273534A1 (en) | 2013-03-14 | 2014-09-18 | Tokyo Electron Limited | Integration of absorption based heating bake methods into a photolithography track system |
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JP5451643B2 (ja) | 2014-03-26 |
KR101850088B1 (ko) | 2018-04-18 |
WO2009102600A1 (en) | 2009-08-20 |
TWI463589B (zh) | 2014-12-01 |
CN105514001A (zh) | 2016-04-20 |
US7754518B2 (en) | 2010-07-13 |
EP2248150A4 (en) | 2012-03-07 |
KR20160030321A (ko) | 2016-03-16 |
TWI545676B (zh) | 2016-08-11 |
KR20100123724A (ko) | 2010-11-24 |
US20100273334A1 (en) | 2010-10-28 |
TW201507050A (zh) | 2015-02-16 |
US7923280B2 (en) | 2011-04-12 |
EP2248150A1 (en) | 2010-11-10 |
KR101749041B1 (ko) | 2017-06-20 |
KR20170072362A (ko) | 2017-06-26 |
CN105514001B (zh) | 2018-03-09 |
TW201001588A (en) | 2010-01-01 |
CN101946302B (zh) | 2016-02-10 |
KR101608865B1 (ko) | 2016-04-04 |
CN101946302A (zh) | 2011-01-12 |
US20090209112A1 (en) | 2009-08-20 |
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