TWI545676B - 毫秒退火(dsa)之邊緣保護 - Google Patents
毫秒退火(dsa)之邊緣保護 Download PDFInfo
- Publication number
- TWI545676B TWI545676B TW103137232A TW103137232A TWI545676B TW I545676 B TWI545676 B TW I545676B TW 103137232 A TW103137232 A TW 103137232A TW 103137232 A TW103137232 A TW 103137232A TW I545676 B TWI545676 B TW I545676B
- Authority
- TW
- Taiwan
- Prior art keywords
- substrate
- substrate support
- energy
- blocker
- energy blocker
- Prior art date
Links
- 238000000137 annealing Methods 0.000 title description 15
- 239000000758 substrate Substances 0.000 claims description 188
- 238000012545 processing Methods 0.000 claims description 57
- 238000010438 heat treatment Methods 0.000 claims description 12
- 230000013011 mating Effects 0.000 claims description 4
- 230000004888 barrier function Effects 0.000 claims description 2
- 238000000034 method Methods 0.000 description 20
- 230000008569 process Effects 0.000 description 9
- 239000000463 material Substances 0.000 description 6
- 230000007246 mechanism Effects 0.000 description 6
- 230000008646 thermal stress Effects 0.000 description 6
- 230000005855 radiation Effects 0.000 description 4
- 238000012546 transfer Methods 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 238000005336 cracking Methods 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 230000005670 electromagnetic radiation Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000005224 laser annealing Methods 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910000420 cerium oxide Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 229920001903 high density polyethylene Polymers 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- ZKEYULQFFYBZBG-UHFFFAOYSA-N lanthanum carbide Chemical compound [La].[C-]#[C] ZKEYULQFFYBZBG-UHFFFAOYSA-N 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000010408 sweeping Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 229910000859 α-Fe Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68721—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge clamping, e.g. clamping ring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Recrystallisation Techniques (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12/032,475 US7754518B2 (en) | 2008-02-15 | 2008-02-15 | Millisecond annealing (DSA) edge protection |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201507050A TW201507050A (zh) | 2015-02-16 |
| TWI545676B true TWI545676B (zh) | 2016-08-11 |
Family
ID=40955524
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW103137232A TWI545676B (zh) | 2008-02-15 | 2009-02-13 | 毫秒退火(dsa)之邊緣保護 |
| TW098104686A TWI463589B (zh) | 2008-02-15 | 2009-02-13 | 毫秒退火(dsa)之邊緣保護 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW098104686A TWI463589B (zh) | 2008-02-15 | 2009-02-13 | 毫秒退火(dsa)之邊緣保護 |
Country Status (7)
| Country | Link |
|---|---|
| US (2) | US7754518B2 (enExample) |
| EP (1) | EP2248150A4 (enExample) |
| JP (1) | JP5451643B2 (enExample) |
| KR (3) | KR101608865B1 (enExample) |
| CN (2) | CN105514001B (enExample) |
| TW (2) | TWI545676B (enExample) |
| WO (1) | WO2009102600A1 (enExample) |
Families Citing this family (38)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101840322B1 (ko) * | 2009-12-31 | 2018-03-20 | 어플라이드 머티어리얼스, 인코포레이티드 | 웨이퍼 엣지 및 경사면 증착을 수정하기 위한 쉐도우 링 |
| NL2009689A (en) * | 2011-12-01 | 2013-06-05 | Asml Netherlands Bv | Support, lithographic apparatus and device manufacturing method. |
| US9005877B2 (en) | 2012-05-15 | 2015-04-14 | Tokyo Electron Limited | Method of forming patterns using block copolymers and articles thereof |
| KR102003334B1 (ko) | 2012-09-04 | 2019-07-24 | 삼성전자주식회사 | 패턴 형성 방법 |
| US8980538B2 (en) | 2013-03-14 | 2015-03-17 | Tokyo Electron Limited | Chemi-epitaxy in directed self-assembly applications using photo-decomposable agents |
| US9147574B2 (en) | 2013-03-14 | 2015-09-29 | Tokyo Electron Limited | Topography minimization of neutral layer overcoats in directed self-assembly applications |
| US8975009B2 (en) | 2013-03-14 | 2015-03-10 | Tokyo Electron Limited | Track processing to remove organic films in directed self-assembly chemo-epitaxy applications |
| US20140273534A1 (en) | 2013-03-14 | 2014-09-18 | Tokyo Electron Limited | Integration of absorption based heating bake methods into a photolithography track system |
| US9136110B2 (en) | 2013-03-15 | 2015-09-15 | Tokyo Electron Limited | Multi-step bake apparatus and method for directed self-assembly lithography control |
| KR102394994B1 (ko) | 2013-09-04 | 2022-05-04 | 도쿄엘렉트론가부시키가이샤 | 유도 자기 조립용 화학 템플릿을 생성하기 위한 경화 포토레지스트의 자외선을 이용한 박리 |
| US9793137B2 (en) | 2013-10-20 | 2017-10-17 | Tokyo Electron Limited | Use of grapho-epitaxial directed self-assembly applications to precisely cut logic lines |
| US9349604B2 (en) | 2013-10-20 | 2016-05-24 | Tokyo Electron Limited | Use of topography to direct assembly of block copolymers in grapho-epitaxial applications |
| CN104733344A (zh) * | 2013-12-18 | 2015-06-24 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 一种边沿保护装置及等离子体加工设备 |
| CN104736011B (zh) * | 2013-12-27 | 2017-05-31 | Ykk株式会社 | 增强膜粘着装置及具有可分离式嵌插件的拉链 |
| US20150187616A1 (en) * | 2013-12-31 | 2015-07-02 | Taiwan Semiconductor Manufacturing Co., Ltd. | Mechanisms of adjustable laser beam for laser spike annealing |
| US9410249B2 (en) * | 2014-05-15 | 2016-08-09 | Infineon Technologies Ag | Wafer releasing |
| US10892180B2 (en) * | 2014-06-02 | 2021-01-12 | Applied Materials, Inc. | Lift pin assembly |
| US10658222B2 (en) * | 2015-01-16 | 2020-05-19 | Lam Research Corporation | Moveable edge coupling ring for edge process control during semiconductor wafer processing |
| CN105988298B (zh) * | 2015-02-02 | 2018-06-01 | 上海微电子装备(集团)股份有限公司 | 硅片边缘保护装置及保护方法 |
| US10957563B2 (en) * | 2015-12-30 | 2021-03-23 | Mattson Technology, Inc. | Chamber wall heating for a millisecond anneal system |
| US10651015B2 (en) | 2016-02-12 | 2020-05-12 | Lam Research Corporation | Variable depth edge ring for etch uniformity control |
| US9947597B2 (en) | 2016-03-31 | 2018-04-17 | Tokyo Electron Limited | Defectivity metrology during DSA patterning |
| JP6618876B2 (ja) * | 2016-09-26 | 2019-12-11 | 株式会社ニューフレアテクノロジー | 基板処理装置、搬送方法およびサセプタ |
| CN106571321B (zh) * | 2016-11-18 | 2019-12-06 | 中国电子科技集团公司第四十八研究所 | 一种用于快速热处理设备的载片台 |
| US10704147B2 (en) * | 2016-12-03 | 2020-07-07 | Applied Materials, Inc. | Process kit design for in-chamber heater and wafer rotating mechanism |
| US10535538B2 (en) * | 2017-01-26 | 2020-01-14 | Gary Hillman | System and method for heat treatment of substrates |
| CN118380375A (zh) | 2017-11-21 | 2024-07-23 | 朗姆研究公司 | 底部边缘环和中部边缘环 |
| CN110376847B (zh) * | 2018-04-12 | 2021-01-01 | 上海微电子装备(集团)股份有限公司 | 一种基底边缘保护环单元、光刻设备及保护方法 |
| CN114743854B (zh) | 2019-05-14 | 2025-02-25 | 玛特森技术公司 | 末端执行器和用于处理工件的系统 |
| CN112786510A (zh) * | 2019-11-04 | 2021-05-11 | 北京华卓精科科技股份有限公司 | 激光退火系统和激光退火方法 |
| JP7466686B2 (ja) | 2020-03-23 | 2024-04-12 | ラム リサーチ コーポレーション | 基板処理システムにおける中間リング腐食補償 |
| CN111508890B (zh) * | 2020-04-28 | 2023-12-22 | 北京北方华创微电子装备有限公司 | 一种晶片装卸机构和半导体工艺设备 |
| CN112670206A (zh) * | 2020-12-21 | 2021-04-16 | 上海华力集成电路制造有限公司 | 一种改善晶圆破片的激光退火设备及其使用方法 |
| CN115547876A (zh) * | 2021-06-30 | 2022-12-30 | 上海微电子装备(集团)股份有限公司 | 基板边缘保护装置及半导体机台 |
| US12486576B2 (en) * | 2021-07-01 | 2025-12-02 | Applied Materials, Inc. | Shadow ring lift to improve wafer edge performance |
| KR20230041917A (ko) * | 2021-09-17 | 2023-03-27 | 삼성전자주식회사 | 건식 식각 장치 및 이를 이용한 웨이퍼 식각 시스템 |
| US20230124884A1 (en) * | 2021-10-15 | 2023-04-20 | Semes Co., Ltd. | Apparatus for lifting substrate and apparatus for processing substrate |
| US20250038040A1 (en) * | 2023-07-27 | 2025-01-30 | Applied Materials, Inc. | Lift frames for central heating, and related processing chambers and methods |
Family Cites Families (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5079112A (en) * | 1989-08-07 | 1992-01-07 | At&T Bell Laboratories | Device manufacture involving lithographic processing |
| US5146092A (en) * | 1990-05-23 | 1992-09-08 | Ntc Technology, Inc. | Gas analysis transducers with electromagnetic energy detector units |
| US5304248A (en) * | 1990-12-05 | 1994-04-19 | Applied Materials, Inc. | Passive shield for CVD wafer processing which provides frontside edge exclusion and prevents backside depositions |
| JP2601179Y2 (ja) | 1993-11-29 | 1999-11-08 | 日新電機株式会社 | 基板保持装置 |
| JP3251875B2 (ja) * | 1996-05-10 | 2002-01-28 | 株式会社東芝 | 荷電粒子ビーム露光装置 |
| US6168668B1 (en) * | 1998-11-25 | 2001-01-02 | Applied Materials, Inc. | Shadow ring and guide for supporting the shadow ring in a chamber |
| US6589352B1 (en) * | 1999-12-10 | 2003-07-08 | Applied Materials, Inc. | Self aligning non contact shadow ring process kit |
| US6627846B1 (en) | 1999-12-16 | 2003-09-30 | Oramir Semiconductor Equipment Ltd. | Laser-driven cleaning using reactive gases |
| DE10226603A1 (de) | 2002-06-14 | 2004-01-08 | Infineon Technologies Ag | Verfahren zum Strukturieren einer Siliziumschicht sowie dessen Verwendung zur Herstellung einer integrierten Halbleiterschaltung |
| US7166200B2 (en) * | 2002-09-30 | 2007-01-23 | Tokyo Electron Limited | Method and apparatus for an improved upper electrode plate in a plasma processing system |
| US6835914B2 (en) | 2002-11-05 | 2004-12-28 | Mattson Technology, Inc. | Apparatus and method for reducing stray light in substrate processing chambers |
| CN1322563C (zh) * | 2004-01-18 | 2007-06-20 | 统宝光电股份有限公司 | 制备多晶硅膜层的激光退火装置及形成多晶硅膜层的方法 |
| JP3910603B2 (ja) * | 2004-06-07 | 2007-04-25 | 株式会社東芝 | 熱処理装置、熱処理方法及び半導体装置の製造方法 |
| US20060286807A1 (en) | 2005-06-16 | 2006-12-21 | Jack Hwang | Use of active temperature control to provide emmisivity independent wafer temperature |
| US7368303B2 (en) | 2004-10-20 | 2008-05-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method for temperature control in a rapid thermal processing system |
| US7277213B2 (en) * | 2004-12-03 | 2007-10-02 | Microvision, Inc. | Aperture plate and related system and method |
| US20070012557A1 (en) * | 2005-07-13 | 2007-01-18 | Applied Materials, Inc | Low voltage sputtering for large area substrates |
| US20070221640A1 (en) | 2006-03-08 | 2007-09-27 | Dean Jennings | Apparatus for thermal processing structures formed on a substrate |
-
2008
- 2008-02-15 US US12/032,475 patent/US7754518B2/en active Active
-
2009
- 2009-02-04 CN CN201610031475.6A patent/CN105514001B/zh active Active
- 2009-02-04 KR KR1020107020693A patent/KR101608865B1/ko not_active Expired - Fee Related
- 2009-02-04 WO PCT/US2009/033102 patent/WO2009102600A1/en not_active Ceased
- 2009-02-04 CN CN200980105096.5A patent/CN101946302B/zh active Active
- 2009-02-04 KR KR1020167005075A patent/KR101749041B1/ko active Active
- 2009-02-04 EP EP09710273A patent/EP2248150A4/en not_active Withdrawn
- 2009-02-04 JP JP2010546828A patent/JP5451643B2/ja not_active Expired - Fee Related
- 2009-02-04 KR KR1020177016202A patent/KR101850088B1/ko active Active
- 2009-02-13 TW TW103137232A patent/TWI545676B/zh active
- 2009-02-13 TW TW098104686A patent/TWI463589B/zh not_active IP Right Cessation
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2010
- 2010-07-12 US US12/834,620 patent/US7923280B2/en active Active
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|---|---|
| KR101749041B1 (ko) | 2017-06-20 |
| US20090209112A1 (en) | 2009-08-20 |
| KR20170072362A (ko) | 2017-06-26 |
| EP2248150A4 (en) | 2012-03-07 |
| US7923280B2 (en) | 2011-04-12 |
| US20100273334A1 (en) | 2010-10-28 |
| TWI463589B (zh) | 2014-12-01 |
| KR101608865B1 (ko) | 2016-04-04 |
| TW201507050A (zh) | 2015-02-16 |
| EP2248150A1 (en) | 2010-11-10 |
| CN101946302B (zh) | 2016-02-10 |
| KR101850088B1 (ko) | 2018-04-18 |
| KR20160030321A (ko) | 2016-03-16 |
| WO2009102600A1 (en) | 2009-08-20 |
| CN105514001B (zh) | 2018-03-09 |
| CN105514001A (zh) | 2016-04-20 |
| CN101946302A (zh) | 2011-01-12 |
| US7754518B2 (en) | 2010-07-13 |
| JP5451643B2 (ja) | 2014-03-26 |
| TW201001588A (en) | 2010-01-01 |
| JP2011512674A (ja) | 2011-04-21 |
| KR20100123724A (ko) | 2010-11-24 |
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