KR101840416B1 - 레이저 열전사용 폴리이미드 감광성 조성물 - Google Patents

레이저 열전사용 폴리이미드 감광성 조성물 Download PDF

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Publication number
KR101840416B1
KR101840416B1 KR1020110129548A KR20110129548A KR101840416B1 KR 101840416 B1 KR101840416 B1 KR 101840416B1 KR 1020110129548 A KR1020110129548 A KR 1020110129548A KR 20110129548 A KR20110129548 A KR 20110129548A KR 101840416 B1 KR101840416 B1 KR 101840416B1
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KR
South Korea
Prior art keywords
photosensitive composition
polyimide
bis
weight
glycol alkyl
Prior art date
Application number
KR1020110129548A
Other languages
English (en)
Korean (ko)
Other versions
KR20130063172A (ko
Inventor
김병욱
윤혁민
김동명
김진우
황치용
Original Assignee
주식회사 동진쎄미켐
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 주식회사 동진쎄미켐 filed Critical 주식회사 동진쎄미켐
Priority to KR1020110129548A priority Critical patent/KR101840416B1/ko
Priority to PCT/KR2012/010213 priority patent/WO2013085223A1/ko
Priority to CN201280060276.8A priority patent/CN103975275B/zh
Priority to TW101145661A priority patent/TW201331266A/zh
Publication of KR20130063172A publication Critical patent/KR20130063172A/ko
Application granted granted Critical
Publication of KR101840416B1 publication Critical patent/KR101840416B1/ko

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0005—Production of optical devices or components in so far as characterised by the lithographic processes or materials used therefor
    • G03F7/0007—Filters, e.g. additive colour filters; Components for display devices
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0387—Polyamides or polyimides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2014—Contact or film exposure of light sensitive plates such as lithographic plates or circuit boards, e.g. in a vacuum frame
    • G03F7/2016—Contact mask being integral part of the photosensitive element and subject to destructive removal during post-exposure processing
    • G03F7/202—Masking pattern being obtained by thermal means, e.g. laser ablation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/18—Deposition of organic active material using non-liquid printing techniques, e.g. thermal transfer printing from a donor sheet

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Optics & Photonics (AREA)
  • Materials For Photolithography (AREA)
  • Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)
  • Electroluminescent Light Sources (AREA)
KR1020110129548A 2011-12-06 2011-12-06 레이저 열전사용 폴리이미드 감광성 조성물 KR101840416B1 (ko)

Priority Applications (4)

Application Number Priority Date Filing Date Title
KR1020110129548A KR101840416B1 (ko) 2011-12-06 2011-12-06 레이저 열전사용 폴리이미드 감광성 조성물
PCT/KR2012/010213 WO2013085223A1 (ko) 2011-12-06 2012-11-29 레이저 열전사용 폴리이미드 감광성 조성물
CN201280060276.8A CN103975275B (zh) 2011-12-06 2012-11-29 激光热转印用聚酰亚胺光敏性组合物
TW101145661A TW201331266A (zh) 2011-12-06 2012-12-05 用於雷射引發熱成像之聚醯亞胺光敏性組成物

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020110129548A KR101840416B1 (ko) 2011-12-06 2011-12-06 레이저 열전사용 폴리이미드 감광성 조성물

Publications (2)

Publication Number Publication Date
KR20130063172A KR20130063172A (ko) 2013-06-14
KR101840416B1 true KR101840416B1 (ko) 2018-03-20

Family

ID=48574528

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020110129548A KR101840416B1 (ko) 2011-12-06 2011-12-06 레이저 열전사용 폴리이미드 감광성 조성물

Country Status (4)

Country Link
KR (1) KR101840416B1 (zh)
CN (1) CN103975275B (zh)
TW (1) TW201331266A (zh)
WO (1) WO2013085223A1 (zh)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104710616B (zh) * 2015-04-09 2017-07-04 东莞市三条化成实业有限公司 一种可用于激光直接成型的聚酰亚胺组合物

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007156243A (ja) * 2005-12-07 2007-06-21 Nissan Chem Ind Ltd ポジ型感光性樹脂組成物及びその硬化膜
JP2011023119A (ja) 2009-07-13 2011-02-03 Sony Corp 表示装置の製造方法、有機発光素子の製造方法および転写方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5856065A (en) * 1996-03-27 1999-01-05 Olin Microelectronic Chemicals, Inc. Negative working photoresist composition based on polyimide primers
KR100405301B1 (ko) * 1999-09-10 2003-11-12 주식회사 엘지화학 새로운 폴리이미드 전구체 및 이를 이용한 감광성 수지 조성물
JP2003231752A (ja) * 2002-02-12 2003-08-19 Toyobo Co Ltd 感光性ポリイミド前駆体、感光性樹脂組成物、カラーフィルター、液晶駆動側基板、及び、液晶パネル
EP1909142B1 (en) * 2005-06-30 2015-06-24 Toray Industries, Inc. Photosensitive resin composition and adhesion enhancer
CN101663348B (zh) * 2007-04-25 2012-06-06 日产化学工业株式会社 聚酰亚胺前体和聚酰亚胺以及形成图像的下层膜涂布液
JP2011231199A (ja) * 2010-04-27 2011-11-17 Sanyo Chem Ind Ltd 熱可塑性ウレタン樹脂の製造方法
KR101882217B1 (ko) * 2011-10-18 2018-07-26 주식회사 동진쎄미켐 오엘이디용 폴리이미드 감광성 수지 조성물

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007156243A (ja) * 2005-12-07 2007-06-21 Nissan Chem Ind Ltd ポジ型感光性樹脂組成物及びその硬化膜
JP2011023119A (ja) 2009-07-13 2011-02-03 Sony Corp 表示装置の製造方法、有機発光素子の製造方法および転写方法

Also Published As

Publication number Publication date
CN103975275B (zh) 2018-05-25
KR20130063172A (ko) 2013-06-14
WO2013085223A1 (ko) 2013-06-13
TW201331266A (zh) 2013-08-01
CN103975275A (zh) 2014-08-06

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