KR101837226B1 - 기판으로부터 질화물을 선택적으로 제거하는 방법 - Google Patents

기판으로부터 질화물을 선택적으로 제거하는 방법 Download PDF

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Publication number
KR101837226B1
KR101837226B1 KR1020137015044A KR20137015044A KR101837226B1 KR 101837226 B1 KR101837226 B1 KR 101837226B1 KR 1020137015044 A KR1020137015044 A KR 1020137015044A KR 20137015044 A KR20137015044 A KR 20137015044A KR 101837226 B1 KR101837226 B1 KR 101837226B1
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South Korea
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acid
mixed
sulfuric acid
liquid stream
substrate
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Korean (ko)
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KR20140063498A (ko
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안토니 에스 랏코비히
제프리 더블류 버터보프
데이빗 에스 베커
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티이엘 에프에스아이, 인코포레이티드
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H10P72/0411—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H10P72/0414—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0422—Apparatus for fluid treatment for etching for wet etching
    • H10P72/0424—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles

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  • Weting (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
KR1020137015044A 2010-12-10 2011-12-06 기판으로부터 질화물을 선택적으로 제거하는 방법 Expired - Fee Related KR101837226B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US42180810P 2010-12-10 2010-12-10
US61/421,808 2010-12-10
PCT/US2011/063441 WO2012078580A1 (en) 2010-12-10 2011-12-06 Process for selectively removing nitride from substrates

Publications (2)

Publication Number Publication Date
KR20140063498A KR20140063498A (ko) 2014-05-27
KR101837226B1 true KR101837226B1 (ko) 2018-03-09

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KR1020137015044A Expired - Fee Related KR101837226B1 (ko) 2010-12-10 2011-12-06 기판으로부터 질화물을 선택적으로 제거하는 방법

Country Status (6)

Country Link
US (1) US9059104B2 (https=)
JP (1) JP6236320B2 (https=)
KR (1) KR101837226B1 (https=)
CN (2) CN110189995A (https=)
TW (1) TWI528432B (https=)
WO (1) WO2012078580A1 (https=)

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JP2012074601A (ja) * 2010-09-29 2012-04-12 Dainippon Screen Mfg Co Ltd 基板処理装置および基板処理方法
US9257292B2 (en) 2011-03-30 2016-02-09 Tokyo Electron Limited Etch system and method for single substrate processing
US20120248061A1 (en) * 2011-03-30 2012-10-04 Tokyo Electron Limited Increasing masking layer etch rate and selectivity
US9355874B2 (en) * 2011-09-24 2016-05-31 Taiwan Semiconductor Manufacturing Company, Ltd. Silicon nitride etching in a single wafer apparatus
JP5854230B2 (ja) * 2012-12-13 2016-02-09 栗田工業株式会社 基板洗浄液および基板洗浄方法
US8871108B2 (en) * 2013-01-22 2014-10-28 Tel Fsi, Inc. Process for removing carbon material from substrates
US9017568B2 (en) 2013-01-22 2015-04-28 Tel Fsi, Inc. Process for increasing the hydrophilicity of silicon surfaces following HF treatment
CN105121376B (zh) * 2013-03-15 2018-02-27 东京毅力科创Fsi公司 用于提供加热的蚀刻溶液的处理系统和方法
JP2016519441A (ja) * 2013-05-08 2016-06-30 ティーイーエル エフエスアイ，インコーポレイティド ヘイズ除去および残渣除去用の水蒸気を含むプロセス
JP6225067B2 (ja) * 2013-06-21 2017-11-01 東京エレクトロン株式会社 基板液処理装置及び基板液処理方法
US10269591B2 (en) * 2013-10-23 2019-04-23 Taiwan Semiconductor Manufacturing Co., Ltd. Method of selectively removing silicon nitride and single wafer etching apparatus thereof
TWI578396B (zh) * 2013-12-11 2017-04-11 斯克林集團公司 基板處理方法及基板處理裝置
JP6434367B2 (ja) * 2015-05-14 2018-12-05 東京エレクトロン株式会社 基板液処理装置及び基板液処理方法並びに基板液処理プログラムを記憶したコンピュータ読み取り可能な記憶媒体
TWI629720B (zh) * 2015-09-30 2018-07-11 Tokyo Electron Limited 用於濕蝕刻製程之溫度的動態控制之方法及設備
GB201815163D0 (en) * 2018-09-18 2018-10-31 Lam Res Ag Wafer washing method and apparatus
JP7209556B2 (ja) 2019-02-05 2023-01-20 東京エレクトロン株式会社 基板処理方法および基板処理装置
CN111829941A (zh) * 2020-05-27 2020-10-27 盐城工学院 一种用于检测氧化镓单晶加工表面损伤层的腐蚀液及检测方法
JP7779723B2 (ja) * 2021-12-17 2025-12-03 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法
JP2025515839A (ja) 2022-05-13 2025-05-20 インテグリス・インコーポレーテッド 窒化ケイ素エッチング組成物および方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6087273A (en) 1997-01-22 2000-07-11 Micron Technology, Inc. Process for selectively etching silicon nitride in the presence of silicon oxide
JP2006278954A (ja) 2005-03-30 2006-10-12 Dainippon Screen Mfg Co Ltd 基板処理方法および基板処理装置
JP2008028365A (ja) 2006-06-22 2008-02-07 Riverbell Kk 処理装置及び処理方法
US20080283090A1 (en) * 2007-05-18 2008-11-20 Dekraker David Process for treatment of substrates with water vapor or steam

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TW380284B (en) * 1998-09-09 2000-01-21 Promos Technologies Inc Method for improving etching uniformity during a wet etching process
US6406551B1 (en) 1999-05-14 2002-06-18 Fsi International, Inc. Method for treating a substrate with heat sensitive agents
US6488272B1 (en) 2000-06-07 2002-12-03 Simplus Systems Corporation Liquid delivery system emulsifier
US6835667B2 (en) 2002-06-14 2004-12-28 Fsi International, Inc. Method for etching high-k films in solutions comprising dilute fluoride species
JP4494840B2 (ja) * 2003-06-27 2010-06-30 大日本スクリーン製造株式会社 異物除去装置、基板処理装置および基板処理方法
WO2005067019A1 (en) * 2003-12-30 2005-07-21 Akrion, Llc System and method for selective etching of silicon nitride during substrate processing
JP4439956B2 (ja) 2004-03-16 2010-03-24 ソニー株式会社 レジスト剥離方法およびレジスト剥離装置
JP4692785B2 (ja) 2005-04-01 2011-06-01 エフエスアイ インターナショナル インコーポレイテッド 一つ又はそれ以上の処理流体を用いた、半導体ウエハー又は他のマイクロエレクトロニクス用の基板に使用されるツール用の移動かつ入れ子化できる、コンパクトなダクトシステム
JP4986566B2 (ja) * 2005-10-14 2012-07-25 大日本スクリーン製造株式会社 基板処理方法および基板処理装置
CN101900956A (zh) 2005-11-23 2010-12-01 Fsi国际公司 从基材上除去材料的方法
KR101191337B1 (ko) 2006-07-07 2012-10-16 에프에스아이 인터내쇼날 인크. 하나 이상의 처리 유체로 마이크로일렉트로닉 워크피스를 처리하는데 사용되는 장치용 배리어 구조물 및 노즐장치
JP4799332B2 (ja) * 2006-09-12 2011-10-26 株式会社東芝 エッチング液、エッチング方法および電子部品の製造方法
KR20130083940A (ko) 2008-05-09 2013-07-23 티이엘 에프에스아이, 인코포레이티드 개방 동작 모드와 폐쇄 동작 모드사이를 용이하게 변경하는 처리실 설계를 이용하여 마이크로일렉트로닉 워크피이스를 처리하는 공구 및 방법
US9355874B2 (en) 2011-09-24 2016-05-31 Taiwan Semiconductor Manufacturing Company, Ltd. Silicon nitride etching in a single wafer apparatus

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6087273A (en) 1997-01-22 2000-07-11 Micron Technology, Inc. Process for selectively etching silicon nitride in the presence of silicon oxide
JP2006278954A (ja) 2005-03-30 2006-10-12 Dainippon Screen Mfg Co Ltd 基板処理方法および基板処理装置
JP2008028365A (ja) 2006-06-22 2008-02-07 Riverbell Kk 処理装置及び処理方法
US20080283090A1 (en) * 2007-05-18 2008-11-20 Dekraker David Process for treatment of substrates with water vapor or steam

Also Published As

Publication number Publication date
WO2012078580A1 (en) 2012-06-14
US9059104B2 (en) 2015-06-16
US20120145672A1 (en) 2012-06-14
JP2013545319A (ja) 2013-12-19
TWI528432B (zh) 2016-04-01
TW201246334A (en) 2012-11-16
CN110189995A (zh) 2019-08-30
KR20140063498A (ko) 2014-05-27
CN103348452A (zh) 2013-10-09
JP6236320B2 (ja) 2017-11-22

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