TWI528432B - 自基板選擇性移除氮化物之方法 - Google Patents

自基板選擇性移除氮化物之方法 Download PDF

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Publication number
TWI528432B
TWI528432B TW100145642A TW100145642A TWI528432B TW I528432 B TWI528432 B TW I528432B TW 100145642 A TW100145642 A TW 100145642A TW 100145642 A TW100145642 A TW 100145642A TW I528432 B TWI528432 B TW I528432B
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TW
Taiwan
Prior art keywords
substrate
acid
stream
mixed
sulfuric acid
Prior art date
Application number
TW100145642A
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English (en)
Chinese (zh)
Other versions
TW201246334A (en
Inventor
安東尼Ｓ 雷克維奇
傑佛瑞Ｗ 巴特包
大衛Ｓ 貝克
Original Assignee
東京電子Ｆｓｉ股份有限公司
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Publication date
Application filed by 東京電子Ｆｓｉ股份有限公司 filed Critical 東京電子Ｆｓｉ股份有限公司
Publication of TW201246334A publication Critical patent/TW201246334A/zh
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Publication of TWI528432B publication Critical patent/TWI528432B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H10P72/0411—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H10P72/0414—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0422—Apparatus for fluid treatment for etching for wet etching
    • H10P72/0424—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles

Landscapes

  • Weting (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
TW100145642A 2010-12-10 2011-12-09 自基板選擇性移除氮化物之方法 TWI528432B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US42180810P 2010-12-10 2010-12-10

Publications (2)

Publication Number Publication Date
TW201246334A TW201246334A (en) 2012-11-16
TWI528432B true TWI528432B (zh) 2016-04-01

Family

ID=46198261

Family Applications (1)

Application Number Title Priority Date Filing Date
TW100145642A TWI528432B (zh) 2010-12-10 2011-12-09 自基板選擇性移除氮化物之方法

Country Status (6)

Country Link
US (1) US9059104B2 (https=)
JP (1) JP6236320B2 (https=)
KR (1) KR101837226B1 (https=)
CN (2) CN110189995A (https=)
TW (1) TWI528432B (https=)
WO (1) WO2012078580A1 (https=)

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JP2012074601A (ja) * 2010-09-29 2012-04-12 Dainippon Screen Mfg Co Ltd 基板処理装置および基板処理方法
US9257292B2 (en) 2011-03-30 2016-02-09 Tokyo Electron Limited Etch system and method for single substrate processing
US20120248061A1 (en) * 2011-03-30 2012-10-04 Tokyo Electron Limited Increasing masking layer etch rate and selectivity
US9355874B2 (en) * 2011-09-24 2016-05-31 Taiwan Semiconductor Manufacturing Company, Ltd. Silicon nitride etching in a single wafer apparatus
JP5854230B2 (ja) * 2012-12-13 2016-02-09 栗田工業株式会社 基板洗浄液および基板洗浄方法
US8871108B2 (en) * 2013-01-22 2014-10-28 Tel Fsi, Inc. Process for removing carbon material from substrates
US9017568B2 (en) 2013-01-22 2015-04-28 Tel Fsi, Inc. Process for increasing the hydrophilicity of silicon surfaces following HF treatment
CN105121376B (zh) * 2013-03-15 2018-02-27 东京毅力科创Fsi公司 用于提供加热的蚀刻溶液的处理系统和方法
JP2016519441A (ja) * 2013-05-08 2016-06-30 ティーイーエル エフエスアイ，インコーポレイティド ヘイズ除去および残渣除去用の水蒸気を含むプロセス
JP6225067B2 (ja) * 2013-06-21 2017-11-01 東京エレクトロン株式会社 基板液処理装置及び基板液処理方法
US10269591B2 (en) * 2013-10-23 2019-04-23 Taiwan Semiconductor Manufacturing Co., Ltd. Method of selectively removing silicon nitride and single wafer etching apparatus thereof
TWI578396B (zh) * 2013-12-11 2017-04-11 斯克林集團公司 基板處理方法及基板處理裝置
JP6434367B2 (ja) * 2015-05-14 2018-12-05 東京エレクトロン株式会社 基板液処理装置及び基板液処理方法並びに基板液処理プログラムを記憶したコンピュータ読み取り可能な記憶媒体
TWI629720B (zh) * 2015-09-30 2018-07-11 Tokyo Electron Limited 用於濕蝕刻製程之溫度的動態控制之方法及設備
GB201815163D0 (en) * 2018-09-18 2018-10-31 Lam Res Ag Wafer washing method and apparatus
JP7209556B2 (ja) 2019-02-05 2023-01-20 東京エレクトロン株式会社 基板処理方法および基板処理装置
CN111829941A (zh) * 2020-05-27 2020-10-27 盐城工学院 一种用于检测氧化镓单晶加工表面损伤层的腐蚀液及检测方法
JP7779723B2 (ja) * 2021-12-17 2025-12-03 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法
JP2025515839A (ja) 2022-05-13 2025-05-20 インテグリス・インコーポレーテッド 窒化ケイ素エッチング組成物および方法

Family Cites Families (18)

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US5885903A (en) 1997-01-22 1999-03-23 Micron Technology, Inc. Process for selectively etching silicon nitride in the presence of silicon oxide
TW380284B (en) * 1998-09-09 2000-01-21 Promos Technologies Inc Method for improving etching uniformity during a wet etching process
US6406551B1 (en) 1999-05-14 2002-06-18 Fsi International, Inc. Method for treating a substrate with heat sensitive agents
US6488272B1 (en) 2000-06-07 2002-12-03 Simplus Systems Corporation Liquid delivery system emulsifier
US6835667B2 (en) 2002-06-14 2004-12-28 Fsi International, Inc. Method for etching high-k films in solutions comprising dilute fluoride species
JP4494840B2 (ja) * 2003-06-27 2010-06-30 大日本スクリーン製造株式会社 異物除去装置、基板処理装置および基板処理方法
WO2005067019A1 (en) * 2003-12-30 2005-07-21 Akrion, Llc System and method for selective etching of silicon nitride during substrate processing
JP4439956B2 (ja) 2004-03-16 2010-03-24 ソニー株式会社 レジスト剥離方法およびレジスト剥離装置
JP4495022B2 (ja) 2005-03-30 2010-06-30 大日本スクリーン製造株式会社 基板処理方法および基板処理装置
JP4692785B2 (ja) 2005-04-01 2011-06-01 エフエスアイ インターナショナル インコーポレイテッド 一つ又はそれ以上の処理流体を用いた、半導体ウエハー又は他のマイクロエレクトロニクス用の基板に使用されるツール用の移動かつ入れ子化できる、コンパクトなダクトシステム
JP4986566B2 (ja) * 2005-10-14 2012-07-25 大日本スクリーン製造株式会社 基板処理方法および基板処理装置
CN101900956A (zh) 2005-11-23 2010-12-01 Fsi国际公司 从基材上除去材料的方法
JP5181085B2 (ja) 2006-06-22 2013-04-10 リバーベル株式会社 処理装置及び処理方法
KR101191337B1 (ko) 2006-07-07 2012-10-16 에프에스아이 인터내쇼날 인크. 하나 이상의 처리 유체로 마이크로일렉트로닉 워크피스를 처리하는데 사용되는 장치용 배리어 구조물 및 노즐장치
JP4799332B2 (ja) * 2006-09-12 2011-10-26 株式会社東芝 エッチング液、エッチング方法および電子部品の製造方法
US7819984B2 (en) * 2007-05-18 2010-10-26 Fsi International, Inc. Process for treatment of substrates with water vapor or steam
KR20130083940A (ko) 2008-05-09 2013-07-23 티이엘 에프에스아이, 인코포레이티드 개방 동작 모드와 폐쇄 동작 모드사이를 용이하게 변경하는 처리실 설계를 이용하여 마이크로일렉트로닉 워크피이스를 처리하는 공구 및 방법
US9355874B2 (en) 2011-09-24 2016-05-31 Taiwan Semiconductor Manufacturing Company, Ltd. Silicon nitride etching in a single wafer apparatus

Also Published As

Publication number Publication date
WO2012078580A1 (en) 2012-06-14
US9059104B2 (en) 2015-06-16
US20120145672A1 (en) 2012-06-14
JP2013545319A (ja) 2013-12-19
TW201246334A (en) 2012-11-16
CN110189995A (zh) 2019-08-30
KR20140063498A (ko) 2014-05-27
CN103348452A (zh) 2013-10-09
JP6236320B2 (ja) 2017-11-22
KR101837226B1 (ko) 2018-03-09

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