KR101830195B1 - 반도체 장치와 그것의 제작 방법 - Google Patents

반도체 장치와 그것의 제작 방법 Download PDF

Info

Publication number
KR101830195B1
KR101830195B1 KR1020127018471A KR20127018471A KR101830195B1 KR 101830195 B1 KR101830195 B1 KR 101830195B1 KR 1020127018471 A KR1020127018471 A KR 1020127018471A KR 20127018471 A KR20127018471 A KR 20127018471A KR 101830195 B1 KR101830195 B1 KR 101830195B1
Authority
KR
South Korea
Prior art keywords
oxide semiconductor
semiconductor layer
crystal region
element oxide
atmosphere
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020127018471A
Other languages
English (en)
Korean (ko)
Other versions
KR20120089776A (ko
Inventor
순페이 야마자키
타쿠야 히로하시
마사히로 타카하시
타카시 시마즈
Original Assignee
가부시키가이샤 한도오따이 에네루기 켄큐쇼
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가부시키가이샤 한도오따이 에네루기 켄큐쇼 filed Critical 가부시키가이샤 한도오따이 에네루기 켄큐쇼
Publication of KR20120089776A publication Critical patent/KR20120089776A/ko
Application granted granted Critical
Publication of KR101830195B1 publication Critical patent/KR101830195B1/ko
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/22—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using physical deposition, e.g. vacuum deposition or sputtering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures
    • H10D62/405—Orientations of crystalline planes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3424—Deposited materials, e.g. layers characterised by the chemical composition being Group IIB-VIA materials
    • H10P14/3426—Oxides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3434—Deposited materials, e.g. layers characterised by the chemical composition being oxide semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth

Landscapes

  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Formation Of Insulating Films (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Recrystallisation Techniques (AREA)
KR1020127018471A 2009-12-18 2010-12-06 반도체 장치와 그것의 제작 방법 Expired - Fee Related KR101830195B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPJP-P-2009-288494 2009-12-18
JP2009288494 2009-12-18
PCT/JP2010/072304 WO2011074506A1 (en) 2009-12-18 2010-12-06 Semiconductor device and method for manufacturing the same

Publications (2)

Publication Number Publication Date
KR20120089776A KR20120089776A (ko) 2012-08-13
KR101830195B1 true KR101830195B1 (ko) 2018-02-20

Family

ID=44149803

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020127018471A Expired - Fee Related KR101830195B1 (ko) 2009-12-18 2010-12-06 반도체 장치와 그것의 제작 방법

Country Status (5)

Country Link
US (1) US9034104B2 (enExample)
JP (1) JP5802009B2 (enExample)
KR (1) KR101830195B1 (enExample)
TW (1) TWI555056B (enExample)
WO (1) WO2011074506A1 (enExample)

Families Citing this family (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11101266B2 (en) * 2009-10-12 2021-08-24 Monolithic 3D Inc. 3D device and devices with bonding
EP2494692B1 (en) 2009-10-30 2016-11-23 Semiconductor Energy Laboratory Co. Ltd. Logic circuit and semiconductor device
CN102640292B (zh) 2009-11-27 2015-11-25 株式会社半导体能源研究所 半导体装置和及其制造方法
KR20120106873A (ko) 2009-12-28 2012-09-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치의 제작 방법
KR20190093706A (ko) * 2010-01-24 2019-08-09 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치와 이의 제조 방법
CN102334384B (zh) * 2010-02-22 2015-01-28 松下电器产业株式会社 发光装置及其制造方法
KR101932576B1 (ko) 2010-09-13 2018-12-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
TWI562379B (en) 2010-11-30 2016-12-11 Semiconductor Energy Lab Co Ltd Semiconductor device and method for manufacturing semiconductor device
DE112012000601T5 (de) * 2011-01-28 2014-01-30 Semiconductor Energy Laboratory Co., Ltd. Verfahren zum Herstellen einer Halbleitervorrichtung sowie Halbleitervorrichtung
TWI624878B (zh) 2011-03-11 2018-05-21 半導體能源研究所股份有限公司 半導體裝置的製造方法
US8932913B2 (en) 2011-04-22 2015-01-13 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
US8878288B2 (en) 2011-04-22 2014-11-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8809854B2 (en) 2011-04-22 2014-08-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8916868B2 (en) 2011-04-22 2014-12-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
US8847233B2 (en) 2011-05-12 2014-09-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having a trenched insulating layer coated with an oxide semiconductor film
US8716073B2 (en) * 2011-07-22 2014-05-06 Semiconductor Energy Laboratory Co., Ltd. Method for processing oxide semiconductor film and method for manufacturing semiconductor device
US9660092B2 (en) * 2011-08-31 2017-05-23 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor thin film transistor including oxygen release layer
KR102108572B1 (ko) * 2011-09-26 2020-05-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작 방법
KR101976212B1 (ko) 2011-10-24 2019-05-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작 방법
US8796683B2 (en) * 2011-12-23 2014-08-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8860022B2 (en) 2012-04-27 2014-10-14 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor film and semiconductor device
US20130320335A1 (en) * 2012-06-01 2013-12-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US9577446B2 (en) * 2012-12-13 2017-02-21 Semiconductor Energy Laboratory Co., Ltd. Power storage system and power storage device storing data for the identifying power storage device
JP6300589B2 (ja) 2013-04-04 2018-03-28 株式会社半導体エネルギー研究所 半導体装置の作製方法
US20140299873A1 (en) * 2013-04-05 2014-10-09 Semiconductor Energy Laboratory Co., Ltd. Single-crystal oxide semiconductor, thin film, oxide stack, and formation method thereof
US9716003B2 (en) 2013-09-13 2017-07-25 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing semiconductor device
US9805952B2 (en) 2013-09-13 2017-10-31 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US9627413B2 (en) * 2013-12-12 2017-04-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and display device
JP6587497B2 (ja) * 2014-10-31 2019-10-09 株式会社半導体エネルギー研究所 半導体装置
JP6725317B2 (ja) 2016-05-19 2020-07-15 株式会社ジャパンディスプレイ 表示装置
KR102794026B1 (ko) * 2018-03-12 2025-04-09 가부시키가이샤 한도오따이 에네루기 켄큐쇼 금속 산화물 및 금속 산화물을 포함한 트랜지스터
JP2020181985A (ja) * 2020-06-25 2020-11-05 株式会社ジャパンディスプレイ 表示装置

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004103957A (ja) * 2002-09-11 2004-04-02 Japan Science & Technology Corp ホモロガス薄膜を活性層として用いる透明薄膜電界効果型トランジスタ

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000026119A (ja) 1998-07-09 2000-01-25 Hoya Corp 透明導電性酸化物薄膜を有する物品及びその製造方法
JP2000150861A (ja) 1998-11-16 2000-05-30 Tdk Corp 酸化物薄膜
JP3276930B2 (ja) 1998-11-17 2002-04-22 科学技術振興事業団 トランジスタ及び半導体装置
JP4540201B2 (ja) * 2000-09-13 2010-09-08 独立行政法人産業技術総合研究所 ＺｎＯ系酸化物半導体層を有する半導体装置の製法
US7061014B2 (en) * 2001-11-05 2006-06-13 Japan Science And Technology Agency Natural-superlattice homologous single crystal thin film, method for preparation thereof, and device using said single crystal thin film
JP4298194B2 (ja) 2001-11-05 2009-07-15 独立行政法人科学技術振興機構 自然超格子ホモロガス単結晶薄膜の製造方法。
CN1445821A (zh) 2002-03-15 2003-10-01 三洋电机株式会社 ZnO膜和ZnO半导体层的形成方法、半导体元件及其制造方法
JP2003298062A (ja) * 2002-03-29 2003-10-17 Sharp Corp 薄膜トランジスタ及びその製造方法
JP2004273732A (ja) 2003-03-07 2004-09-30 Sharp Corp アクティブマトリクス基板およびその製造方法
EP2413366B1 (en) 2004-03-12 2017-01-11 Japan Science And Technology Agency A switching element of LCDs or organic EL displays
JP5138163B2 (ja) 2004-11-10 2013-02-06 キヤノン株式会社 電界効果型トランジスタ
AU2005302962B2 (en) 2004-11-10 2009-05-07 Canon Kabushiki Kaisha Amorphous oxide and field effect transistor
JP5116225B2 (ja) * 2005-09-06 2013-01-09 キヤノン株式会社 酸化物半導体デバイスの製造方法
EP3614442A3 (en) * 2005-09-29 2020-03-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having oxide semiconductor layer and manufactoring method thereof
JP5064747B2 (ja) 2005-09-29 2012-10-31 株式会社半導体エネルギー研究所 半導体装置、電気泳動表示装置、表示モジュール、電子機器、及び半導体装置の作製方法
JP5078246B2 (ja) 2005-09-29 2012-11-21 株式会社半導体エネルギー研究所 半導体装置、及び半導体装置の作製方法
JP4977478B2 (ja) 2006-01-21 2012-07-18 三星電子株式会社 ＺｎＯフィルム及びこれを用いたＴＦＴの製造方法
US7977169B2 (en) 2006-02-15 2011-07-12 Kochi Industrial Promotion Center Semiconductor device including active layer made of zinc oxide with controlled orientations and manufacturing method thereof
US20070287221A1 (en) 2006-06-12 2007-12-13 Xerox Corporation Fabrication process for crystalline zinc oxide semiconductor layer
JP4609797B2 (ja) * 2006-08-09 2011-01-12 Ｎｅｃ液晶テクノロジー株式会社 薄膜デバイス及びその製造方法
US8129714B2 (en) * 2007-02-16 2012-03-06 Idemitsu Kosan Co., Ltd. Semiconductor, semiconductor device, complementary transistor circuit device
JPWO2009034953A1 (ja) * 2007-09-10 2010-12-24 出光興産株式会社 薄膜トランジスタ
JP5291928B2 (ja) * 2007-12-26 2013-09-18 株式会社日立製作所 酸化物半導体装置およびその製造方法
KR101496148B1 (ko) 2008-05-15 2015-02-27 삼성전자주식회사 반도체소자 및 그 제조방법
KR101810699B1 (ko) 2009-06-30 2018-01-25 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 제작 방법

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004103957A (ja) * 2002-09-11 2004-04-02 Japan Science & Technology Corp ホモロガス薄膜を活性層として用いる透明薄膜電界効果型トランジスタ

Also Published As

Publication number Publication date
US20110147739A1 (en) 2011-06-23
JP5802009B2 (ja) 2015-10-28
WO2011074506A1 (en) 2011-06-23
TW201137943A (en) 2011-11-01
TWI555056B (zh) 2016-10-21
JP2011146698A (ja) 2011-07-28
KR20120089776A (ko) 2012-08-13
US9034104B2 (en) 2015-05-19

Similar Documents

Publication Publication Date Title
JP7642021B2 (ja) 半導体装置
JP5802009B2 (ja) 半導体装置の作製方法
JP6216420B2 (ja) 半導体装置の作製方法

Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

A201 Request for examination
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U12-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

PC1903 Unpaid annual fee

St.27 status event code: A-4-4-U10-U13-oth-PC1903

Not in force date: 20210213

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

PC1903 Unpaid annual fee

St.27 status event code: N-4-6-H10-H13-oth-PC1903

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20210213

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000