JP5802009B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

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Publication number
JP5802009B2
JP5802009B2 JP2010280703A JP2010280703A JP5802009B2 JP 5802009 B2 JP5802009 B2 JP 5802009B2 JP 2010280703 A JP2010280703 A JP 2010280703A JP 2010280703 A JP2010280703 A JP 2010280703A JP 5802009 B2 JP5802009 B2 JP 5802009B2
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Japan
Prior art keywords
oxide semiconductor
semiconductor layer
single crystal
crystal region
component
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Expired - Fee Related
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JP2010280703A
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English (en)
Japanese (ja)
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JP2011146698A (ja
JP2011146698A5 (enExample
Inventor
山崎　舜平
舜平 山崎
拓也 廣橋
拓也 廣橋
高橋　正弘
正弘 高橋
貴志 島津
貴志 島津
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2010280703A priority Critical patent/JP5802009B2/ja
Publication of JP2011146698A publication Critical patent/JP2011146698A/ja
Publication of JP2011146698A5 publication Critical patent/JP2011146698A5/ja
Application granted granted Critical
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/22—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using physical deposition, e.g. vacuum deposition or sputtering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures
    • H10D62/405—Orientations of crystalline planes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3424—Deposited materials, e.g. layers characterised by the chemical composition being Group IIB-VIA materials
    • H10P14/3426—Oxides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3434—Deposited materials, e.g. layers characterised by the chemical composition being oxide semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth

Landscapes

  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Formation Of Insulating Films (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Recrystallisation Techniques (AREA)
JP2010280703A 2009-12-18 2010-12-16 半導体装置の作製方法 Expired - Fee Related JP5802009B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2010280703A JP5802009B2 (ja) 2009-12-18 2010-12-16 半導体装置の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2009288494 2009-12-18
JP2009288494 2009-12-18
JP2010280703A JP5802009B2 (ja) 2009-12-18 2010-12-16 半導体装置の作製方法

Publications (3)

Publication Number Publication Date
JP2011146698A JP2011146698A (ja) 2011-07-28
JP2011146698A5 JP2011146698A5 (enExample) 2014-01-16
JP5802009B2 true JP5802009B2 (ja) 2015-10-28

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010280703A Expired - Fee Related JP5802009B2 (ja) 2009-12-18 2010-12-16 半導体装置の作製方法

Country Status (5)

Country Link
US (1) US9034104B2 (enExample)
JP (1) JP5802009B2 (enExample)
KR (1) KR101830195B1 (enExample)
TW (1) TWI555056B (enExample)
WO (1) WO2011074506A1 (enExample)

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CN102640292B (zh) 2009-11-27 2015-11-25 株式会社半导体能源研究所 半导体装置和及其制造方法
KR20120106873A (ko) 2009-12-28 2012-09-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치의 제작 방법
KR20190093706A (ko) * 2010-01-24 2019-08-09 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치와 이의 제조 방법
CN102334384B (zh) * 2010-02-22 2015-01-28 松下电器产业株式会社 发光装置及其制造方法
KR101932576B1 (ko) 2010-09-13 2018-12-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
TWI562379B (en) 2010-11-30 2016-12-11 Semiconductor Energy Lab Co Ltd Semiconductor device and method for manufacturing semiconductor device
DE112012000601T5 (de) * 2011-01-28 2014-01-30 Semiconductor Energy Laboratory Co., Ltd. Verfahren zum Herstellen einer Halbleitervorrichtung sowie Halbleitervorrichtung
TWI624878B (zh) 2011-03-11 2018-05-21 半導體能源研究所股份有限公司 半導體裝置的製造方法
US8932913B2 (en) 2011-04-22 2015-01-13 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
US8878288B2 (en) 2011-04-22 2014-11-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8809854B2 (en) 2011-04-22 2014-08-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8916868B2 (en) 2011-04-22 2014-12-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
US8847233B2 (en) 2011-05-12 2014-09-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having a trenched insulating layer coated with an oxide semiconductor film
US8716073B2 (en) * 2011-07-22 2014-05-06 Semiconductor Energy Laboratory Co., Ltd. Method for processing oxide semiconductor film and method for manufacturing semiconductor device
US9660092B2 (en) * 2011-08-31 2017-05-23 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor thin film transistor including oxygen release layer
KR102108572B1 (ko) * 2011-09-26 2020-05-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작 방법
KR101976212B1 (ko) 2011-10-24 2019-05-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작 방법
US8796683B2 (en) * 2011-12-23 2014-08-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8860022B2 (en) 2012-04-27 2014-10-14 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor film and semiconductor device
US20130320335A1 (en) * 2012-06-01 2013-12-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US9577446B2 (en) * 2012-12-13 2017-02-21 Semiconductor Energy Laboratory Co., Ltd. Power storage system and power storage device storing data for the identifying power storage device
JP6300589B2 (ja) 2013-04-04 2018-03-28 株式会社半導体エネルギー研究所 半導体装置の作製方法
US20140299873A1 (en) * 2013-04-05 2014-10-09 Semiconductor Energy Laboratory Co., Ltd. Single-crystal oxide semiconductor, thin film, oxide stack, and formation method thereof
US9716003B2 (en) 2013-09-13 2017-07-25 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing semiconductor device
US9805952B2 (en) 2013-09-13 2017-10-31 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US9627413B2 (en) * 2013-12-12 2017-04-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and display device
JP6587497B2 (ja) * 2014-10-31 2019-10-09 株式会社半導体エネルギー研究所 半導体装置
JP6725317B2 (ja) 2016-05-19 2020-07-15 株式会社ジャパンディスプレイ 表示装置
KR102794026B1 (ko) * 2018-03-12 2025-04-09 가부시키가이샤 한도오따이 에네루기 켄큐쇼 금속 산화물 및 금속 산화물을 포함한 트랜지스터
JP2020181985A (ja) * 2020-06-25 2020-11-05 株式会社ジャパンディスプレイ 表示装置

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KR101810699B1 (ko) 2009-06-30 2018-01-25 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 제작 방법

Also Published As

Publication number Publication date
US20110147739A1 (en) 2011-06-23
WO2011074506A1 (en) 2011-06-23
TW201137943A (en) 2011-11-01
TWI555056B (zh) 2016-10-21
JP2011146698A (ja) 2011-07-28
KR20120089776A (ko) 2012-08-13
KR101830195B1 (ko) 2018-02-20
US9034104B2 (en) 2015-05-19

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