KR101802019B1 - 계측 장치, 계측 방법, 리소그래피 장치, 및 물품 제조 방법 - Google Patents

계측 장치, 계측 방법, 리소그래피 장치, 및 물품 제조 방법 Download PDF

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KR101802019B1
KR101802019B1 KR1020140149016A KR20140149016A KR101802019B1 KR 101802019 B1 KR101802019 B1 KR 101802019B1 KR 1020140149016 A KR1020140149016 A KR 1020140149016A KR 20140149016 A KR20140149016 A KR 20140149016A KR 101802019 B1 KR101802019 B1 KR 101802019B1
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South Korea
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shot
substrate
coefficient
shot area
shot areas
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KR20150050473A (ko
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마사토시 엔도
다카노리 모로오카
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캐논 가부시끼가이샤
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
    • G03F9/7046—Strategy, e.g. mark, sensor or wavelength selection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Length Measuring Devices By Optical Means (AREA)
KR1020140149016A 2013-10-31 2014-10-30 계측 장치, 계측 방법, 리소그래피 장치, 및 물품 제조 방법 Active KR101802019B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2013-227241 2013-10-31
JP2013227241A JP6381197B2 (ja) 2013-10-31 2013-10-31 計測装置、計測方法、リソグラフィ装置、及び物品製造方法

Publications (2)

Publication Number Publication Date
KR20150050473A KR20150050473A (ko) 2015-05-08
KR101802019B1 true KR101802019B1 (ko) 2017-11-27

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Country Link
US (1) US9665018B2 (https=)
JP (1) JP6381197B2 (https=)
KR (1) KR101802019B1 (https=)
TW (1) TWI569107B (https=)

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* Cited by examiner, † Cited by third party
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JP6271922B2 (ja) * 2013-09-10 2018-01-31 キヤノン株式会社 位置を求める方法、露光方法、露光装置、および物品の製造方法
TWI560747B (en) * 2014-04-02 2016-12-01 Macromix Internat Co Ltd Method of manufacturing semiconductor and exposure system
JP6207671B1 (ja) * 2016-06-01 2017-10-04 キヤノン株式会社 パターン形成装置、基板配置方法及び物品の製造方法
JP6688273B2 (ja) * 2017-11-13 2020-04-28 キヤノン株式会社 リソグラフィ装置、リソグラフィ方法、決定方法及び物品の製造方法
JP7745407B2 (ja) * 2021-10-01 2025-09-29 キヤノン株式会社 基板上の複数のショット領域の配列を求める方法、露光方法、露光装置、物品の製造方法、プログラム及び情報処理装置
JP2024121638A (ja) * 2023-02-27 2024-09-06 キヤノン株式会社 基板上の複数の領域の配列を求める方法、露光方法、露光装置、物品の製造方法、プログラム及び情報処理装置
CN116379927B (zh) * 2023-05-31 2023-08-29 湖南隆深氢能科技有限公司 应用于贴合生产线的精准检测方法、系统以及存储介质

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US4780617A (en) * 1984-08-09 1988-10-25 Nippon Kogaku K.K. Method for successive alignment of chip patterns on a substrate
US4881100A (en) * 1985-12-10 1989-11-14 Canon Kabushiki Kaisha Alignment method
JP3513892B2 (ja) * 1992-12-25 2004-03-31 株式会社ニコン 位置合わせ方法及び装置、それらを用いた露光方法及び装置
KR100377887B1 (ko) * 1994-02-10 2003-06-18 가부시키가이샤 니콘 정렬방법
JP3590873B2 (ja) * 1995-06-12 2004-11-17 株式会社ニコン 基板の位置合わせ方法及びそれを用いた露光方法、基板の位置合わせ装置及びそれを有する露光装置
TW556296B (en) * 2000-12-27 2003-10-01 Koninkl Philips Electronics Nv Method of measuring alignment of a substrate with respect to a reference alignment mark
DE60108082T2 (de) * 2001-05-14 2005-10-13 Infineon Technologies Ag Verfahren zu Durchführung einer Ausrichtungsmessung von zwei Mustern in unterschiedlichen Schichten eines Halbleiterwafers
JP4955874B2 (ja) 2001-09-07 2012-06-20 キヤノン株式会社 位置合わせ装置、露光装置、およびデバイス製造方法
JPWO2004075268A1 (ja) * 2003-02-19 2006-06-01 株式会社ニコン 移動方法、露光方法及び露光装置、並びにデバイス製造方法
JP4072465B2 (ja) * 2003-06-19 2008-04-09 キヤノン株式会社 位置検出方法
US7817242B2 (en) 2003-11-28 2010-10-19 Nikon Corporation Exposure method and device manufacturing method, exposure apparatus, and program
JP4678372B2 (ja) * 2004-06-29 2011-04-27 株式会社ニコン 管理方法及び管理システム、並びにプログラム
JP2006236192A (ja) * 2005-02-28 2006-09-07 Toppan Printing Co Ltd 品質管理システム
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JP5056063B2 (ja) * 2007-02-22 2012-10-24 富士ゼロックス株式会社 画像処理装置及び画像処理プログラム
JP2007306024A (ja) * 2007-07-17 2007-11-22 Canon Inc 位置決め方法
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KR102070086B1 (ko) * 2013-02-13 2020-01-29 삼성전자주식회사 타겟 값을 보정하여 공정을 수행하는 방법 및 공정 시스템

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Publication number Publication date
JP6381197B2 (ja) 2018-08-29
JP2015087314A (ja) 2015-05-07
KR20150050473A (ko) 2015-05-08
US20150116688A1 (en) 2015-04-30
TWI569107B (zh) 2017-02-01
TW201518876A (zh) 2015-05-16
US9665018B2 (en) 2017-05-30

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