WO2015152106A1

WO2015152106A1 - Pattern forming method, exposure appratus, and method of manufacturing article

Info

Publication number: WO2015152106A1
Application number: PCT/JP2015/059827
Authority: WO
Inventors: Shinichiro Koga; Noburu Takakura
Original assignee: Canon Kabushiki Kaisha
Priority date: 2014-04-01
Filing date: 2015-03-24
Publication date: 2015-10-08
Also published as: JP2015198173A; JP6356996B2

Abstract

The present invention provides a method of forming a third pattern on a substrate on which a second pattern is overlaid on a first pattern, the method comprising a first step of obtaining a position deviation amount between the first pattern and the second pattern with respect to each of a plurality of sample shot regions on the substrate, a second step of obtaining a position of the second pattern in each sample shot region, and a third step of generating information indicating a position of the first pattern in each sample shot region based on the position deviation amount and the position of the second pattern, and overlaying the third pattern on the second pattern in accordance with alignment information obtained by a global alignment method using the information indicating the position of the first pattern serving as an alignment target.

Description

DESCRIPTION

TITLE OF INVENTION PATTERN FORMING METHOD, EXPOSURE APPRATUS, AND METHOD

OF MANUFACTURING ARTICLE

TECHNICAL FIELD

[0001] The present invention relates to a pattern forming method, an exposure apparatus, and a method of manufacturing an article.

BACKGROUND ART

[0002] An exposure apparatus which transfers a mask pattern onto a substrate is available as one of the apparatuses used for the manufacturing process

(lithography process) of semiconductor devices and the like. Such exposure apparatuses mainly employ a global alignment method as an alignment method between a mask and a substrate (see Japanese Patent No. 3634487).

According to the global alignment method, the positions of marks formed on several representative shot regions

(sample shot regions) on a substrate are measured, and alignment is performed for all shot regions on the substrate by using a common index obtained by

performing statistical processing of the measurement values .

[0003] The manufacture of semiconductor devices and the like requires an overlay process of the patterns of a plurality of layers on one substrate. In recent years, from the viewpoint of the throughput and transfer accuracy, a plurality of lithography

apparatuses are selectively used to form the patterns of the plurality of layers on the substrate. An alignment method different from the global alignment method can be used for forming a predetermined layer pattern. For example, in an imprint apparatus which forms a pattern of an imprint material on a substrate using a mold, a dye-by-dye alignment method is mainly used as the alignment method between the mold and substrate. Unlike in the global alignment method using the common index for all the shot regions on the substrate, alignment is performed for each shot region on the substrate.

[0004] Assume that a pattern layer (third pattern) is formed using the global alignment method on a pattern layer (second pattern) formed by the dye-by-dye alignment method. Assume also that the second pattern is formed on a pattern layer (first pattern) formed using the global alignment method. In order to take over the accuracy of the grid information of the first pattern in forming the third pattern, the third pattern may be formed by performing alignment by the global alignment method for the first pattern instead of the second pattern. However, since the second pattern is overlaid on the first pattern, the first pattern may not be detected in the alignment for forming the third pattern .

SUMMARY OF INVENTION

[0005] The present invention provides a technique advantageous in forming a plurality of layer patterns on a substrate.

[0006] According to one aspect of the present invention, there is provided a method of forming a third pattern on a substrate on which a second pattern is overlaid on a first pattern, the method comprising: a first step of obtaining a position deviation amount between the first pattern and the second pattern with respect to each of a plurality of sample shot regions on the substrate; a second step of obtaining a position of the second pattern in each sample shot region; and a third step of generating information indicating a position of the first pattern in each sample shot region based on the position deviation amount and the position of the second pattern, and overlaying the third pattern on the second pattern in accordance with alignment information obtained by a global alignment method using the information indicating the position of the first pattern serving as an alignment target.

[0007] Further features of the present invention will become apparent from the following description of exemplary embodiments with reference to the attached drawings .

BRIEF DESCRIPTION OF DRAWINGS

[0008] Fig. 1 is a schematic view for a pattern forming method according to the first embodiment;

[0009] Fig. 2A is a view showing each pattern formed on a substrate;

[0010] Fig. 2B is a view showing each pattern formed on the substrate;

[0011] Fig. 2C is a view showing each pattern formed on the substrate;

[0012] Fig. 3 is a view for explaining a

semiconductor manufacturing factory;

[0013] Fig. 4 is a flowchart showing a method of obtaining a position deviation amount by an inspection device ;

[0014] Fig. 5 is a view showing an example of position deviation amount information stored in a control apparatus;

[0015] Fig. 6 is a schematic view showing the arrangement of an exposure apparatus 100;

[0016] Fig. 7 is a flowchart showing a method of overlaying a third pattern on a second pattern in the exposure apparatus;

[0017] Fig. 8 is a flowchart showing a method of obtaining an error between a statistic value and a measurement value by the exposure apparatus; and [0018] Fig. 9 is a flowchart showing a method of overlaying a third pattern on a second pattern in the exposure apparatus .

DESCRIPTION OF EMBODIMENTS

[0019] Exemplary embodiments of the present invention will be described below with reference to the accompanying drawings. Note that the same reference numerals denote the same members throughout the

drawings, and a repetitive description thereof will not be given.

[0020]<First Embodiment>

A pattern forming method according to the first embodiment will be described below. In the manufacture of semiconductor devices or the like, the step of forming a pattern on a substrate using a lithography apparatus is repeated to overlay a plurality of layer patterns on one substrate. Each layer pattern can be formed by processing such as etching for the substrate on which a resist pattern is formed by the lithography apparatus. In recent years, when forming a plurality of layer patterns, the respective patterns are formed using different types of alignment methods by using different lithography apparatuses. For example, the global alignment method is mainly used as an alignment method between an original (mask) and the substrate in an exposure apparatus for transferring a mask pattern onto the substrate. On the other hand, in an imprint apparatus for forming a pattern of an imprint material on the substrate using a mold, the dye-by-dye alignment method is mainly used as an alignment method between the original (mold) and the substrate.

[0021] Fig. 1 is a schematic view showing a

pattern forming method according to the first

embodiment. SI is a step of overlaying a first pattern 13a on a pattern (fourth pattern) formed on a substrate 6 using the global alignment method by, for example, an exposure apparatus. This step will be called pattern forming step 1 hereinafter. By performing pattern forming step 1, first patterns 13a can be formed in a plurality of shot regions 6a on the substrate 6, as shown in Fig. 2A. S2 is a step of overlaying second patterns 13b on the first patterns 13a on the substrate 6 using the dye-by-dye alignment method by, for example, an imprint apparatus. This step will be called pattern forming step 2 hereinafter. By performing pattern forming step 2, the second patterns 13b are overlaid respectively on the first patterns 13a of the plurality of shot regions 6a on the substrate 6, as shown in Fig. 2B. S3 is a step of overlaying third patterns 13c on the second patterns 13b on the substrate 6 using the global alignment method by, for example, the exposure apparatus. This step will be called pattern forming step 3 hereinafter. By doing pattern forming step 3, the third patterns 13c can be overlaid on the second patterns 13b of the plurality of shot regions 6a, respectively, on the substrate 6, as shown in Fig. 2C.

[0022] In this dye-by-dye alignment method, unlike the global alignment method for performing alignment using the common index in all the shot regions 6a on the substrate 6, alignment is performed for each shot region 6a on the substrate. For this reason, alignment errors having different tendencies occur between the plurality of shot regions 6a on the substrate 6. As a result, alignment errors having different tendencies occur between the plurality of sample shot regions 6ai to 6a₄. For example, as shown in Fig. 2B, alignment errors of the second patterns 13b with respect to the first patterns 13a come to have different tendencies i between the plurality of sample shot regions 6a_x to 6a₄. In this case, assume that the third patterns 13c are overlaid on the second patterns 13b in accordance with the alignment information obtained by the global

alignment method for the second patterns 13b as the targets. In this case, as shown in Fig. 2C, since the alignment errors between the plurality of sample shot regions 6ai to 6a₄ are different from each other, it is difficult to take over the accuracy of the grid

information of the first patterns 13a in forming the third patterns 13c. In addition, since the second patterns 13b are overlaid on the first patterns 13a, the first patterns cannot be detected in the alignment performed when forming the third patterns 13c.

[0023] In the first embodiment, information indicating the positions of the first patterns 13a in the respective sample shot regions are generated on the basis of the position deviation amounts between the first patterns 13a and the second patterns 13b and the positions of the second patterns 13b. By using this information, the third patterns 13c are overlaid on the second patterns 13b in accordance with the alignment information obtained by the global alignment method for the first patterns 13a. In this manner, by forming the third patterns 13c on the substrate, the accuracy of the grid information in the pattern forming step 1 can be taken over in pattern forming step 3. As a result, for example, so-called offset correction in which the correction values of the alignment errors used in pattern forming step 1 are used in pattern forming step 3 can be performed. In the following description, the pattern forming method in this embodiment will be described in detail below.

[0024] [Calculation of Position Deviation Amounts between First Patterns and Second Patterns]

The calculation of position deviation amounts between the first patterns 13a and the second patterns 13b (to be referred to as position deviation amounts hereinafter) according to the overlay errors in pattern forming step 2 will be described below. That is, the overlay errors between the first patterns 13a and the second patterns 13b are calculated, and the overlay errors are used as the position error amounts in the first embodiment.

[0025] A semiconductor manufacturing factory will be described with reference to Fig. 3. The

semiconductor manufacturing factory includes a

plurality of apparatuses 23 and a control apparatus 22 for controlling these apparatuses. The plurality of apparatuses 23 can include a lithography apparatus such as an exposure apparatus and an imprint apparatus, a developing apparatus for developing a latent pattern formed by the lithography apparatus, and a processing apparatus for performing etching. The plurality of apparatuses 23 are connected to the control apparatus 22 via an internal communication network 21 such as a local area network. The control apparatus 22 controls each apparatus 23 via the internal communication network 21 and controls the manufacture of

semiconductor devices including the management of originals (masks and molds) and the substrates.

[0026] In the semiconductor manufacturing factory, an inspection apparatus for inspecting the overlay errors of the patterns formed by the lithography apparatus is arranged as one of the apparatuses 23. The inspection apparatus and the control apparatus 22 are connected via the internal communication network 21. The inspection apparatus can include, for example, a stage for supporting a substrate, a detection system for detecting a mark formed on the substrate, and a control unit for controlling inspection of the overlay errors. The mark is one of the patterns formed by the lithography apparatus. A plurality of marks are formed on a shot region independently of a circuit pattern.

The marks are formed at the identical positions of the plurality of layer patterns on the substrate. The inspection apparatus causes a detection system to simultaneously detect identical marks in two patterns on the substrate, measures the positions of the two patterns, and obtains an overlay error between the two patterns. In the first embodiment, the inspection apparatus measures the positions of the first patterns 13a formed on the substrate in pattern forming step 1 and the positions of the second patterns 13b formed on the substrate in pattern forming step 2. The

inspection apparatus obtains the overlay errors between the first patterns 13a and the second patterns 13b as the position deviation amounts.

[0027] A method of obtaining the position

deviation amounts using the inspection apparatus after overlaying the second patterns 13b on the first

patterns 13a in pattern forming step 2 will be

described with reference to Fig. 4. Fig. 4 is a flowchart showing the method of obtaining the position deviation amounts by the inspection apparatus. This method can be executed by a control unit in the

inspection apparatus. In the first embodiment, a method of obtaining the position deviation amounts by measuring the positions of the first patterns 13a and the positions of the second patterns 13b after forming the second patterns 13b in pattern forming step 2 will be described below. However, the method is not limited to this. For example, the position deviation amounts may be obtained using the position data of the first patterns 13a measured in forming the second patterns 13b in pattern forming step 2 and the position data of the second patterns 13b measured after forming the second patterns 13b in pattern forming step 2. Note that the position data of ^'the first patterns 13a for the sample shot regions may be obtained from the results obtained by performing statistical processing of the positions of the first patterns 13a for the plurality of shot regions on the substrate when forming the second patterns 13b in pattern forming step 2.

[0028] In step S401, the inspection apparatus obtains information (for example, the number of sample shot regions and their positions) about sample shot regions subjected to alignment by the global alignment method when forming the third patterns 13c on the substrate in pattern forming step 3. For example, the inspection apparatus obtains information about the sample shot regions from the control apparatus. In step S402, the inspection apparatus detects a plurality of marks (first marks) formed in the first pattern 13a in each sample shot region and a plurality of marks (second marks) formed in the second pattern 13b. In step S403, the inspection apparatus measures an overlay error between the first pattern 13a and the second pattern 13b in each sample shot region and determines the overlay error as a position deviation amount. In this case, as an example, the position deviation amount is determined as an X-direction shift si_x, a Y- direction shift Si_y, an X-direction magnification mi_x, a Y-direction magnification mi_y, an X-direction rotation rix, and a Y-direction rotation r_iy of each sample shot. For example, the position deviation amounts as the coefficients of equations (1) and (2) can be obtained by the known least square method using the mark

detection results detected in step S402:

^si* ^{+ rr}h_xx ^{+ r}ixy ... (l)

P_\y(x. y) = S_\, + r_lyx + m_{i y}y ... (2)

[0029] In this case, x and y in equations (1) and

(2) indicate the mark positions in the X-Y coordinate system on the substrate surface using the center of each sample shot region as the origin. In addition, Pix(X_f y) and pi_y(x, y) are position deviation amounts between the first pattern and the second pattern. The position deviation amounts at each sample shot region (i = 1 to I (I regions)) are defined as Si_x[i], Si_y[i], Mix f i ] , M_ly[i], Rix f i ] , and Riy[i].

[0030] In step S404, the inspection apparatus transmits the information of position deviation amounts determined in step S403 to the control apparatus. The control apparatus stores the transmitted information of the position deviation amounts. Fig. 5 shows an example of the information of position deviation amounts stored in the control apparatus. In this example, the pieces of information of the position deviation amounts about the X-direction shift, the Y- direction shift, the X-direction magnification, the Y- direction magnification, the X-direction rotation, and the Y-direction rotation for the respective sample shots 1 to M of the respective substrates 1 to N are stored in the control apparatus. In this case, the position deviation amounts are not limited to the above examples (shift, magnification, and rotation). For example, only some of the values described above can be used. In equations (1) and (2), only the primary components of the shift, magnification, and rotation are exemplified, but multi-order components may be included .

[0031] [Step of Overlaying Third Patterns on Second Patterns ]

In pattern forming step 3, a step of overlaying the third patterns 13c on the second patterns 13b will be described below. The step of forming the third patterns 13c on the substrate can be performed by an exposure apparatus 100 which performs alignment between the mask and the substrate by using, for example, the global alignment method.

[0032] The arrangement of the exposure apparatus

100 will be described with reference to Fig. 6. Fig. 6 is a schematic view showing the arrangement of the exposure apparatus 100. The exposure apparatus 100 can include an illumination optical system 2, a mask stage 4, a projection optical system 5, a substrate stage 7, a position measurement unit 8, an alignment detection unit 9, focus detection units 10, and a control unit 1. The controller 1 includes, for example, a computer 11 such as a CPU or DSP and a storage device 12 such as a memory and controls processing (processing for exposing a substrate 6) for transferring a pattern formed on a mask 3 onto the substrate 6.

[0033] The illumination optical system 2 uniformly illuminates the mask 3 held on the mask stage 4 using light emitted from a light source (not shown) . The projection optical system 5 has a predetermined

magnification (for example xl) and projects the pattern formed on the mask 3 onto the substrate 6. The

substrate state 7 is configured to hold the substrate 6 and to be movable in a direction (X-Y direction) perpendicular to the optical axis of the projection optical system 5. The position measurement unit 8 includes, for example, a laser interferometer and measures the position of the substrate stage 7. The laser interferometer irradiates a reflection plate (not shown) of the substrate stage 7 with a laser beam and detects the displacement from the reference position of the substrate stage 7. The position measurement unit 8 obtains the current position of the substrate stage 7 based on the displacement detected by the laser

interferometer. The alignment detection unit 9 detects the mark formed on the substrate when aligning the substrate 6 and the mask 3 in pattern forming step 3. The control unit 1 controls the projection

magnification of the projection optical system 5 and the movement of the substrate stage 7 based on the positions of the plurality of marks detected by the alignment detection unit 9 and controls the alignment between the mask 3 and the substrate 6. The focus detection units 10 detect the height (that is, the position in the Z direction) of the substrate 6.

[0034] A method of overlaying the third patterns

13c on the second patterns 13b in the exposure

apparatus 100 will be described with reference to Fig. 7. Fig. 7 is a flowchart showing the method of

overlaying the third patterns 13c on the second

patterns 13b in the exposure apparatus 100. Although a method of exposing one substrate will be described, the flowchart in Fig. 7 is repeated when exposing a plurality of substrates. The flowchart shown in Fig. 7 is executed by the control unit 1 of the exposure apparatus 100.

[0035] In step S701, the control unit 1 obtains position deviation amount information between the first pattern 13a and the second pattern 13b of each sample shot region. The control unit 1, for example, obtains the position deviation amount information represented in the form shown in Fig. 5 from the inspection

apparatus. The control unit 1 can obtain the position deviation amounts for each substrate or lot. In step

5702, the control unit 1 transports the substrate onto the substrate stage 7 by a substrate transport

mechanism (not shown) , and the substrate stage 7 holds the substrate 6. In step S703, the control unit 1 causes the alignment detection unit 9 to detect the marks formed in the second pattern 13b of each sample shot region and obtains the position of the second pattern 13b in each sample region.

[0036] In step S704, the control unit generates information representing the position of the first pattern 13a in each sample shot region based on the position deviation amount obtained in step S701 and the position of the second pattern 13b obtained in step

5703. For example, the position (p3x, P3_y) of the first pattern 13a in each sample shot region is expressed by equations (3) and (4) :

Pjx (x, y) = Pi_x( . y) - (s_lxW+ M_ix[φ+ R_lx [i]y) ... ( 3 )

. .. ( 4 )

In this case, (p_∑x _/ P2y) is the position of the second pattern 13b in each sample shot region. In equations (3) and (4), Si_x[i], S_ly[i], _lx[i], M_ly[i], Ri_x[i], and Ri_y[i] are position deviation amounts (X- and Y- direction shifts, X- and Y-direction magnifications, and X- and Y-direction rotations) in each sample shot region ( i = 1 to I ) .

[0037] In step S705, the control unit 1 obtains alignment information of the substrate 6 according to the global alignment method using information

indicating the position of the first pattern 13a generated in step S704. In step S706, the control unit 1 performs alignment between the mask 3 and the

substrate 6 in accordance with the alignment

information obtained in step S705, exposes the

substrate 6, and overlays the third patterns 13c on the second patterns 13b. In step S707, the control unit 1 unloads the substrate 6 onto the substrate transport mechanism (not shown) .

[0038] As described above, the exposure apparatus

100 according to the first embodiment overlays the third patterns 13c on the second patterns 13b in accordance with the alignment information obtained using the information indicating the positions of the first patterns 13a. When forming the third patterns 13c on the substrate, the first patterns 13a as the alignment targets can be aligned using the global alignment method. That is, the accuracy of the grid information in pattern forming step 1 can be taken over in pattern forming step 3. The correction value of alignment error used in pattern forming step 1 can be used in pattern forming step 3.

[0039] In the first embodiment, the dye-by-dye alignment method is used as the alignment method in pattern forming step 2. However, the present invention is not limited to this, and the global alignment method may be used. In this manner, in a case where the global alignment method is used as the alignment method in pattern forming step 2, the present invention can particularly be applied when the alignment accuracy in pattern forming step 2 is lower than that in pattern forming step 3. An example of the alignment accuracy in pattern forming step 2 lower than that in pattern forming step 3 is a case in which pattern forming step 2 is a step not requiring formation of a fine pattern compared with other steps (this step will be referred to as a rough step hereinafter) . In general, in the rough step, a low-cost exposure apparatus having a limited exposure performance and stage driving

performance can be used. For this reason, even if alignment using the global alignment method is

performed in pattern forming step 2, various alignment errors may occur between the plurality of shot regions.

[0040] <Second Embodiment>

A pattern forming method according to the second embodiment will be described below. In the pattern forming method according to the second embodiment, an error between the statistic value and a measurement value of the position of a second pattern 13b (lower pattern) in each sample shot region is obtained. The position of the second pattern 13b in each sample shot region is calibrated using the error. Using the calibrated position of the second pattern 13b,

alignment information for the second patterns 13b is obtained by the global alignment method for the second patterns 13b as the alignment targets. Third patterns 13c (upper patterns) are overlaid on the second

patterns 13b in accordance with the obtained alignment information. In this case, the statistic value of the position of the second pattern 13b in each sample shot region is the position of the second pattern 13b in each sample shot region statically obtained from the positions of the second patterns 13b in the plurality of shot regions. In addition, the measurement value of the position of the second pattern 13b in each sample shot region is the position of the second pattern 13b measured by, for example, the inspection apparatus. [0041] [Calculation of Error between Statistic Value and Measurement Value of Position of Second Pattern]

The error between the statistic value and the measurement value of the position of the second pattern 13b will be described with reference to Fig. 8. The error between the statistic value and the measurement value can be obtained using, for example, an alignment detection unit 9 of the exposure apparatus 100. Fig. 8 is a flowchart showing a method of obtaining the error between the statistic value and the measurement value using the exposure apparatus 100. This method can be executed by the control unit 1 in the exposure

apparatus 100. The error between the statistic value and the measurement value is obtained using the initial substrate (second substrate) in each lot and can be applied to a substrate subjected to the exposure process after the second substrate.

[0042] In step S801, the control unit 1 obtains information (for example, the number and positions of regions) about the sample shot regions subjected to alignment by the global alignment method when forming the third patterns 13c on the substrate in pattern forming step 3. In step S802, the control unit 1 causes the alignment detection unit 9 to detect a plurality of marks formed in the second pattern 13b in each of the plurality of shot regions on the substrate and obtains the position of the second pattern 13b in each of the plurality of shot regions. In step S803, the control unit 1 performs the statistical processing of the position of the second pattern 13b in each sample shot region, thereby obtaining the statistic value of the position of the second pattern 13b in each of the plurality of sample shot regions. The control unit 1 obtains the error between the statistic value and the measurement value of the position of the second pattern 13b in each sample shot region. In step S804, the control unit 1 stores the error information

obtained in step S803. As the error between the statistic value and the measurement value of the position of the second pattern 13b, an X-direction shift S2x, a Y-direction shift s_2y, an X-direction magnification m_2x, a Y-direction magnification m_2y, an X-direction rotation r_2x, and a Y-direction rotation r_2y are determined. The error between the statistic value and the measurement value as the coefficients of equations (5) and (6) can be obtained by the known least square method using the mark detection results detected in step S802:

P4A^X> y) ^{= S}2x ^{+ m}2x^{X + r}2xy -..(5)

P4y{x>y) = s_2y + r_2yx + m_2yy ... ( 6 )

[0043] In this case, x and y in equations (5) and

(6) represent the X-Y coordinate position of the mark on the substrate surface using the center of each sample shot region as the origin. p_4x(x, y) and p_4y(x, y) represent the error between the statistic value and the measurement value of the position of the second pattern 13b in each sample shot region. The error in each sample shot region (i = 1 to I) is given by S_2x[i], S_2y[i], M_2x[i], M_2y[i], R₂x[i], and R_2y[i].

[0044] [Step of Overlaying Third Patterns on Second

Patterns ]

A step of overlaying the third patterns 13c on the second patterns 13b in pattern forming step 3 will be described below. Fig. 9 is a flowchart showing a method of overlaying the third patterns 13c on the second patterns 13b in the exposure apparatus 100. The flowchart shown in Fig. 9 can be executed by the

control unit 1.

[0045] In step S901, the control unit 1 obtains information of an error between a statistic value and a measurement value of the position of the second pattern 13b (lower pattern) in each sample shot region. As described above, the error can be obtained using a substrate (second substrate) on which the third

patterns 13c (upper patterns) are formed before a substrate 6 serving as the exposure process target. In step S902, the control unit 1 transports the substrate 6 on the substrate transport mechanism (not shown) onto the substrate stage 7. The substrate 6 is held on the substrate stage 7. In step S903, the control unit 1 causes the alignment detection unit 9 to detect marks formed on the second pattern 13b of each sample shot region and obtains the position of the second pattern 13b in each sample shot region.

[0046] In step S904, using the error obtained in step S901, the control unit 1 calibrates the position of the second pattern 13b obtained in step S903. For example, a calibrated position (p_6x, P6y) of the second pattern is expressed by equations (7) and (8):

p_6y{x~ y) = Psy{x. y) - (s_2yM+R_2y[Ψ+M_2y [i]y) ... (S) where (ps_x, Ps_y) represents the position of the second pattern 13b in each sample shot region. S_2x[i], S_2y[i], M_2x[i], _2y[i], R_2x[i], and R_2y[i] are position deviation amounts (X- and Y-direction shifts, X- and Y-direction magnifications, and X- and Y-direction rotations) in each sample shot region (i = 1 to I) .

[0047] In step S905, the control unit 1 obtains alignment information of the substrate 6 by the global alignment method using the calibrated position of the second pattern 13b. In step S906, the control unit 1 aligns the mask 3 and the substrate in accordance with the alignment information obtained in step S905, exposes the substrate 6, and overlays the third

patterns 13c on the second patterns 13b. In step S907, the control unit 1 transports the substrate 6 onto the substrate transport mechanism (not shown) .

[0048] As described above, according to the second embodiment, the exposure apparatus 100 overlays the third patterns 13c on the second patterns 13b in

accordance with the alignment information obtained using the error between the statistic value and the measurement value of the position of the second pattern 13b in each sample region. Therefore, the correction value of the alignment error obtained in a

predetermined substrate can be commonly used between a plurality of substrate in each lot.

[0049] <Embodiment of Method of Manufacturing Article>

A method of manufacturing an article according to an embodiment of the present invention is suitable for manufacturing an electronic device such as a

semiconductor device, and an article such as an element having a microstructure . The method of manufacturing an article according to the embodiment includes a step of forming a latent image pattern on a photosensitive agent applied to a substrate by using the

aforementioned pattern forming method (step of exposing a substrate) , and a step of developing the substrate on which the latent image pattern is formed in the

preceding step. Further, the manufacturing method can include other well-known steps (for example,

oxidization, deposition, vapor deposition, doping, planarization, etching, resist removal, dicing, bonding, and packaging) . The method of manufacturing an article according to the embodiment is superior to a conventional method in at least one of the performance, quality, productivity, and production cost of an article .

[0050] While the present invention has been described with reference to exemplary embodiments, it is to be understood that the invention is not limited to the disclosed exemplary embodiments. The scope of the following claims is to be accorded the broadest interpretation so as to encompass all such

modifications and equivalent structures and functions.

[0051] This application claims the benefit of

Japanese Patent Application No. 2014-075722 filed April 1, 2014, which is hereby incorporated by reference herein in its entirety.

Claims

1. A method of forming a third pattern on a

substrate on which a second pattern is overlaid on a first pattern, the method comprising:

a first step of obtaining a position deviation amount between the first pattern and the second pattern with respect to each of a plurality of sample shot regions on the substrate;

a second step of obtaining a position of the second pattern in each sample shot region; and

a third step of generating information indicating a position of the first pattern in each sample shot region based on the position deviation amount and the position of the second pattern, and overlaying the third pattern on the second pattern in accordance with alignment information obtained by a global alignment method using the information indicating the position of the first pattern serving as an alignment target.

2. The method according to claim 1, wherein in the first step, the position deviation amount is obtained by measuring the position of the first pattern and the position of the second pattern for each sample shot region .

3. The method according to claim 1, wherein in the first step, the position deviation amount is obtained by detecting a mark formed on the first pattern and a mark formed on the second pattern.

4. The method according to claim 1, wherein in the first step, the position deviation amount is determined using position data of the first pattern measured when forming the second pattern and position data of the second pattern measured after forming the second pattern .

5. The method according to claim 1, wherein in the first step, the position deviation amount is determined using position data of the first pattern for each sample shot, which is obtained from a result of performing statistical processing of the positions of the first patterns for a plurality of shot regions on the substrate when forming the second pattern, and position data of the second pattern measured after forming the second pattern.

6. The method according to claim 1, wherein the second pattern is overlaid on the first pattern in accordance with alignment information obtained by a dye-by-dye alignment method using the position of the first pattern as an alignment target.

7. The method according to claim 6, wherein the second pattern is formed using an imprint apparatus configured to form a pattern of an imprint material on the substrate using a mold.

8. The method according to claim 1, wherein

the second pattern is overlaid on the first pattern in accordance with alignment information obtained by a global alignment method using the

position of the first pattern as an alignment target, and

alignment of overlaying the second pattern on the first pattern has a lower accuracy than alignment when overlaying the third pattern on the second pattern.

9. The method according to claim 1, wherein the first pattern is overlaid on a fourth pattern formed on the substrate in accordance with alignment information obtained by the global alignment method using a

position of the fourth pattern as an alignment target.

10. A pattern forming method of forming an upper pattern on a substrate on which a lower pattern is formed in each of a plurality of shot regions, the method comprising:

a first step of obtaining, using a second

substrate performed forming of the upper pattern before the substrate, an error between a position of the lower pattern in a sample shot region statistically obtained from a position of the lower pattern in each of the plurality of shot regions and a position of the lower pattern in the sample shot region obtained by

measurement ;

a second step of obtaining the position of the lower pattern in a sample shot region of the substrate; and

a third step of calibrating, using the error, the position of the lower pattern obtained in the second step and overlaying the upper pattern on the lower pattern in accordance with alignment information obtained by a global alignment method for the lower pattern as an alignment target using the calibrated position of the lower pattern.

11. An exposure apparatus for exposing a substrate by overlaying a second pattern on a first pattern and forming a third pattern on the substrate, comprising a control unit configured to control formation of the third pattern,

wherein the control unit

obtains, as a correction value, a position deviation amount between the first pattern and the second pattern for each of a plurality of sample shot regions on the substrate,

obtains a position of the second pattern in each sample shot region, and

generates information indicating a position of the first pattern in each sample shot region based on the position deviation amount and the position of the second pattern and overlays the third pattern on the second pattern in accordance with alignment information obtained by a global alignment method using the

information indicating the position of the first pattern as an alignment target.

12. A method of manufacturing an article, the method comprising :

forming a pattern on a substrate using a pattern forming method; and

processing the substrate, on which the pattern has been formed, to manufacture the article,

wherein a pattern forming method of forming a third pattern on a substrate on which a second pattern is overlaid on a first pattern includes: