JP6185724B2 - Exposure apparatus and article manufacturing method - Google Patents

Description

  The present invention relates to an exposure apparatus and a method for manufacturing an article.

  For manufacturing a flat panel such as a liquid crystal panel or an organic EL panel or a semiconductor device, an exposure apparatus that transfers a pattern of an original plate such as a mask onto a substrate such as a glass plate or wafer coated with a resist is used. In such an exposure apparatus, it is important to accurately align the pattern of the original plate with the shot area on the substrate. On the other hand, the exposure apparatus is also required to improve throughput (productivity).

  As a method for improving the throughput, for example, in alignment between the original plate and the substrate, not all alignment marks on the substrate are measured, but only a part of the alignment marks are measured (the number of alignment marks to be measured is There is a way to reduce. For example, a method has been proposed in which only a part of alignment marks in a shot area is measured and a correction amount of the shot area is predicted based on a shot area of another substrate in which all alignment marks are measured (Patent Document 1). reference).

Japanese Patent No. 5006761

  In the method described in Patent Document 1, when variations occur between substrates, the possibility of an error in the correction amount of the shot area increases by the amount of the reduced number of alignment marks to be measured.

  Accordingly, an object of the present invention is to provide an exposure apparatus that is advantageous in improving the throughput.

In order to achieve the above object, an exposure apparatus according to an aspect of the present invention is an exposure apparatus that transfers a pattern of an original to a shot area of a substrate via a projection optical system, and the shot area on the substrate A first detection unit that detects a first mark of the plurality of marks formed in the vicinity of the first mark through the projection optical system, and the plurality of marks in parallel with the detection of the first mark by the first detection unit. information indicating the distance between the second comprises a detector, a pre-Symbol the second detector and the first detector for detecting a second mark different from the first mark without passing through the projection optical system of the When a detection result of said first detection section, based on the detection result of the second detection unit, and performs alignment between the original and the shot region.

  According to the present invention, for example, an exposure apparatus that is advantageous in improving throughput can be provided.

It is a figure which shows the exposure apparatus of 1st Embodiment. It is a figure which shows the positional relationship of the mark on a shot area | region, an alignment scope, and an off-axis scope. It is a flowchart which shows the method of acquiring the correction value of a baseline. It is a figure which shows the exposure apparatus of 2nd Embodiment. It is a figure which shows the positional relationship of the mark on a board | substrate, an alignment scope, and an off-axis scope. It is a figure which shows the conventional exposure apparatus. It is a figure which shows the positional relationship between the mark on a board | substrate, the mark on an original plate, and an alignment scope.

  DESCRIPTION OF EXEMPLARY EMBODIMENTS Hereinafter, preferred embodiments of the invention will be described with reference to the accompanying drawings. In addition, in each figure, the same reference number is attached | subjected about the same member thru | or element, and the overlapping description is abbreviate | omitted.

<First Embodiment>
The apparatus configuration and alignment method in the exposure apparatus 100 according to the first embodiment of the present invention will be described in comparison with the conventional exposure apparatus 300. The exposure apparatus 100 of the first embodiment and the conventional exposure apparatus 300 are step-and-scan type scanning exposure apparatuses that transfer an original pattern to a plurality of shot areas on a substrate via a projection optical system. . First, an apparatus configuration and an alignment method in the conventional exposure apparatus 300 will be described. FIG. 6 is a view showing a conventional exposure apparatus 300. The conventional exposure apparatus 300 includes an illumination optical system 1, an alignment measurement unit 2 (first detection unit) , a mask stage 3b, a projection optical system 4, a substrate stage 5b, a surface plate 6, and a control unit 8. Can be included.

  Light emitted from a light source (not shown) enters the illumination optical system 1, and forms, for example, a strip-shaped or arc-shaped exposure region long in the X direction on the original 3a (mask). The original plate 3a and the substrate 5a (for example, a glass plate) are respectively held by the original plate stage 3b and the substrate stage 5b, and are optically conjugate positions via the projection optical system 4 (the object plane of the projection optical system 4 and (Image plane). The projection optical system 4 is, for example, a mirror projection type projection optical system constituted by a plurality of mirrors, has a predetermined projection magnification (for example, 1 × or 1/2 ×), and is a pattern formed on the original 3a. Is projected onto the substrate 5a. The original stage 3b and the substrate stage 5b correspond to the projection magnification of the projection optical system 4 while being synchronized with each other in a direction (Y direction in the first embodiment) orthogonal to the optical axis direction (Z direction) of the projection optical system 4. Scan at a different speed ratio. Thereby, the pattern formed on the original 3a can be transferred to the shot area on the substrate. Such scanning exposure is sequentially repeated for each of a plurality of shot areas on the substrate while stepping the substrate stage 5b, whereby the exposure processing on one substrate can be completed.

  Thus, when the pattern of the original 3a is transferred to each shot area on the substrate, alignment (positioning) between the shot area and the original 3a is performed. The conventional exposure apparatus 300 includes an alignment measurement unit 2 between the illumination optical system 1 and the original 3a, and the alignment measurement unit 2 includes at least one alignment scope. The alignment measuring unit 2 simultaneously observes each of a plurality of marks (alignment marks) formed on the shot area on the substrate and each of the plurality of marks formed on the original plate via the projection optical system 4. The alignment measurement unit 2 can measure the position of each mark (position on the substrate) formed in the shot area on the substrate. Thus, the alignment measurement part 2 detects the mark formed on the board | substrate. Therefore, when the alignment measuring unit 2 detects the mark, if light having the same wavelength as that of the light used when exposing the substrate 5a is used, the substrate 5a is exposed (on the substrate). Resist is exposed). Therefore, the alignment measurement unit 2 uses light having a wavelength different from the wavelength of light used when exposing the substrate, that is, non-exposure light.

  The control unit 8 acquires shape information of the shot area based on the position of each mark on the shot area measured by the alignment measurement unit 2. Then, the control unit 8 controls the moving speed of the original stage 3b and the substrate stage 5b and the projection magnification of the projection optical system 4 based on the acquired shape information so that the mark on the original and the mark on the shot area overlap. Meanwhile, scanning exposure of the substrate 5a is performed. Here, an alignment method in the conventional exposure apparatus 300 will be described with reference to FIG.

  FIG. 7A shows the position of the mark on the substrate, FIG. 7B shows the position of the mark on the original, and FIG. 7C shows the position of the alignment scope in the alignment measurement unit 2. As shown in FIG. 7A, the substrate 5 a includes a plurality of shot areas 51, and for example, six marks 511 to 516 are formed around each shot area 51. As shown in FIG. 7B, the original 3a includes a region 31 in which a pattern to be transferred to each shot region 51 on the substrate is formed. Then, around the area 31, for example, six marks 311 to 316 are formed so as to correspond to the six marks 511 to 516 formed around each shot area 51. Further, as shown in FIG. 7C, the alignment measurement unit 2 can include, for example, two alignment scopes 2a and 2b.

  First, the control unit 8 moves the substrate stage 5b and the original stage 3b, the mark 511 on the substrate and the mark 311 on the original on the alignment scope 2a, and the mark 514 on the substrate on the original and the alignment scope 2b. The mark 314 is detected. At this time, the alignment measurement unit 2 measures the position of the mark 511 on the substrate and the position of the mark 514 on the substrate. Next, the control unit 8 moves the substrate stage 5b and the original stage 3b, the mark 512 on the substrate and the mark 312 on the original on the alignment scope 2a, and the mark 515 on the substrate and the original on the original on the alignment scope 2b. Mark 315 is detected. At this time, the alignment measurement unit 2 measures the position of the mark 512 on the substrate and the position of the mark 515 on the substrate. Similarly, the control unit 8 moves the substrate stage 5b and the original stage 3b, the mark 513 on the substrate and the mark 313 on the original on the alignment scope 2a, and the mark 516 on the substrate and the original on the original on the alignment scope 2b. Mark 316 is detected. At this time, the alignment measurement unit 2 measures the position of the mark 513 on the substrate and the position of the mark 516 on the substrate. As described above, after the substrate stage 5b and the original stage 3b are moved stepwise to measure the positions of all the marks arranged around the shot area 51 on the substrate, the control unit 8 determines the shape of the shot area 51. Information can be acquired. The control unit 8 controls the moving speed of the original stage 3b and the substrate stage 5b and the projection magnification of the projection optical system 4 based on the acquired shape information so that the mark on the original and the mark on the substrate overlap each other. However, scanning exposure of the shot area 51 is performed. In the conventional exposure apparatus 300, in each of a plurality of shot areas formed on the substrate, the position on the substrate at all marks is measured by the alignment measuring unit 2, and the shape information of each shot area is respectively obtained by the control unit 8. To be acquired. Here, the shape information of the shot area 51 includes, for example, a rotation component, a shift component, a magnification component, an orthogonality component, and the like in the shot area 51. In addition, the shift component, the magnification component, and the orthogonality component can each include an X-direction component and a Y-direction component.

As described above, in the conventional exposure apparatus 300, the position on the substrate is measured by the alignment measurement unit 2 for all the marks in each shot area 51. Therefore, each shot area 51 and the area 31 on the original plate are accurately defined. Alignment can be performed. However, in the conventional exposure apparatus 300, the positions of all marks in each shot area are detected only by the alignment measurement unit 2, so that the throughput may be reduced. As a method for improving throughput while maintaining alignment accuracy, for example, there is a method disclosed in Patent Document 1. Patent Document 1 discloses a method for predicting a correction amount of a shot area obtained by measuring only some alignment marks based on a shot area of another substrate obtained by measuring all alignment marks. However, in recent years, with the space saving of the flat panel, the substrate has been made thinner. When the substrate is thinned, random deformation may occur in the substrate in the flat panel manufacturing process. In this case, variations occur between the substrates, and the method disclosed in Patent Document 1 increases the possibility of an error in the correction amount of the shot region by the amount of the number of alignment marks to be measured. In other words, when there is variation between substrates, it becomes difficult to predict the correction amount of a shot area obtained by measuring only some alignment marks based on the shot area of another substrate, and the alignment accuracy is reduced. It can end up. Therefore, the exposure apparatus 100 of the first embodiment includes off-axis measurement units 91 and 92 (second detection unit) in addition to the alignment measurement unit 2. Thereby, the exposure apparatus 100 of 1st Embodiment can align the shot area | region 51 and the area | region 31 on an original plate with high precision, and can improve a throughput compared with the conventional exposure apparatus 300. FIG. .

The apparatus configuration and alignment method in the exposure apparatus 100 of the first embodiment will be described below with reference to FIG. FIG. 1 is a view showing an exposure apparatus 100 according to the first embodiment. An exposure apparatus 100 according to the first embodiment includes an illumination optical system 1, an alignment measurement unit 2 (first measurement unit) , a mask stage 3b, a projection optical system 4, a substrate stage 5b, a surface plate 6, and a control. Part 8 may be included. Further, the exposure apparatus 100 of the first embodiment includes off-axis measurement units 91 and 92 (second measurement unit) disposed between the projection optical system 4 and the substrate 5a (substrate stage 5b). Here, in the exposure apparatus 100 of the first embodiment, the configuration other than the off-axis measurement units 91 and 92 is the same as that of the conventional exposure apparatus 300 described above, and thus the description thereof is omitted here. Also in the exposure apparatus 100 of the first embodiment, similarly to the conventional exposure apparatus, the alignment measurement unit 2 has light (non-exposure) having a wavelength different from the wavelength of light used when exposing the substrate 5a. Light) is used. Also in the off-axis measuring units 91 and 92 of the first embodiment, light (non-exposure light) having a wavelength different from the wavelength of light used when exposing the substrate 5a is used.

  The off-axis measuring units 91 and 92 are disposed between the projection optical system 4 and the substrate 5a (substrate stage 5b), and each include at least one off-axis scope. The off-axis measuring units 91 and 92 detect each of a plurality of marks (alignment marks) provided in the shot area on the substrate without using the projection optical system 4. The off-axis measuring units 91 and 92 can measure the position of each mark on the substrate using information (baseline) indicating the distance between the alignment measuring unit 2 and the off-axis measuring units 91 and 92. . Based on the position of the mark on the shot area measured by the alignment measurement unit 2 and the position of the mark on the shot area detected by the off-axis measurement units 91 and 92, the control unit 8 determines the shape information of the shot area. To get. Then, the control unit 8 controls the moving speed of the original stage 3a and the substrate stage 5b and the projection magnification of the projection optical system 4 based on the acquired shape information so that the mark on the original and the mark on the shot area overlap. Meanwhile, scanning exposure of the substrate 5a is performed. Here, the off-axis measuring units 91 and 92 detect a mark different from the mark measured by the alignment measuring unit 2 among the plurality of marks provided in the shot area on the substrate. In the first embodiment, of the plurality of marks provided in the shot area, a mark measured by the alignment measuring unit 2 is referred to as a first mark, and a mark observed by the off-axis measuring units 91 and 92 is referred to as a second mark.

  An alignment method in the exposure apparatus 100 of the first embodiment will be described with reference to FIG. 2A shows the position of a mark provided in one shot region 51 on the substrate, and FIG. 2B shows the alignment scope in the alignment measurement unit 2 and the off-axis measurement units 91 and 92. It is a figure which shows the positional relationship with an off-axis scope. For example, six marks 511 to 516 are formed around the shot region 51 as shown in FIG. As shown in FIG. 7B, the original 3a includes a region 31 in which a pattern to be transferred to each shot region 51 on the substrate is formed. Then, around the area 31, for example, six marks 311 to 316 are formed so as to correspond to the six marks 511 to 516 formed around each shot area 51. The off-axis measuring unit 91 may include, for example, two off-axis scopes 91a and 91b, and the off-axis measuring unit 92 may include, for example, two off-axis scopes 92a and 92b. Each alignment scope and each off-axis scope are arranged so as to detect different marks in parallel among a plurality of marks provided in one shot area 51 on the substrate.

  For example, the alignment scope 2a detects the mark 312 on the original plate and the mark 512 on the substrate through the projection optical system 4, and the alignment scope 2b projects the mark 315 on the original plate and the mark 515 on the substrate. Detection is via system 4. The alignment measurement unit 2 measures the position of the mark 312 on the substrate and the position of the mark 315 on the substrate. Here, the marks (512 and 515) on the substrate detected by the alignment scopes 2a and 2b are referred to as the first marks as described above.

  On the other hand, each off-axis scope (91a, 91b, 92a and 92b) detects the mark on the substrate without passing through the mark on the original plate and the projection optical system 4. For example, the off-axis scope 91a has a mark 513 on the board, the off-axis scope 91b has a mark 516 on the board, the off-axis scope 92a has a mark 511 on the board, and the off-axis scope 92b has a mark 514 on the board. Observe. Then, the off-axis measuring units 91 and 92 detect the positions on the substrate at the marks (511, 513, 514, and 516) on the substrate observed by the respective off-axis scopes using the baseline. Here, the marks (511, 513, 514, and 516) on the substrate observed by each off-axis scope are referred to as second marks as described above.

  The control unit 8 adjusts the position of the first mark (position on the substrate) measured by the alignment measurement unit 2 and the position of the second mark (position on the substrate) detected by the off-axis measurement units 91 and 92. Based on this, shape information of the shot area 51 is acquired. Then, the control unit 8 controls the moving speed of the original stage 3b and the substrate stage 5b and the projection magnification of the projection optical system 4 based on the acquired shape information so that the mark on the original and the mark on the shot area overlap each other. Meanwhile, scanning exposure of the shot area 51 is performed. Here, as described above, the shape information of the shot area 51 includes, for example, a rotation component, a shift component, a magnification component, an orthogonality component, and the like in the shot area 51. In addition, the shift component, the magnification component, and the orthogonality component can each include an X-direction component and a Y-direction component.

  As described above, the exposure apparatus 100 according to the first embodiment includes the alignment measurement unit 2 and the off-axis measurement units 91 and 92. The first mark is detected by the alignment measurement unit 2, and the off-axis measurement unit 91 and The detection of the second mark by 92 is performed in parallel. As a result, the exposure apparatus 100 of the first embodiment has the number of movement steps of the substrate stage 5b and the original stage stage 3b as compared to the conventional exposure apparatus 300 that detects all the marks on the substrate only by the alignment measurement unit 2. Can be reduced. Therefore, the exposure apparatus 100 of the first embodiment can align the shot area 51 and the area 31 on the original plate with high accuracy and can improve the throughput as compared with the conventional exposure apparatus 300.

  Here, in the exposure apparatus 100 of the first embodiment, the baseline used when detecting the position of the second mark may vary over time due to the influence of heat or the like. If such a baseline variation occurs, an error is included in the position of the second mark detected by the off-axis measuring units 91 and 92, and the alignment accuracy (alignment accuracy) may be reduced. . Therefore, the exposure apparatus 100 of the first embodiment can reduce the error at the position of the second mark by setting a correction value for correcting the baseline periodically and correcting the baseline with the correction value. it can. Hereinafter, a method for acquiring the correction value of the baseline will be described with reference to FIG. FIG. 3 is a flowchart illustrating a method for acquiring a baseline correction value.

In S11, the control unit 8 moves the substrate stage 5b and the original stage 3b so that the alignment measurement unit 2 can detect the first mark and the off-axis measurement units 91 and 92 can detect the second mark. In S12, the control unit 8 causes the alignment measurement unit 2 and the off-axis measurement units 91 and 92 to detect the first mark and the second mark, respectively, and the position of the first mark (position on the substrate) and the second mark The position (position on the substrate) is measured. S11 and S12 are the same as those described above. For example, in FIG. 2, the control unit 8 uses the alignment scope 2a to mark the original 312 and the first mark 512, and the alignment scope 2b to the original 315. And the first mark 515 are detected. Then, the alignment measuring unit 2 measures the position of the first mark 512 and the position of the first mark 515, respectively. Here, the relative positions of the first marks 512 and 515 in the X direction are P _as 2x and P _as 5x, respectively, and the relative positions in the Y direction are P _as 2y and P _as 5y, respectively.

The off-axis scope 91a detects the second mark 513, the off-axis scope 91b detects the second mark 516, the off-axis scope 92a detects the second mark 511, and the off-axis scope 92b detects the second mark 514. Then, the off-axis measuring units 91 and 92 detect the positions (positions on the substrate) of the second marks (511, 513, 514, and 516) using the baseline. Here, the relative positions in the X direction of the second marks 513 and 516 detected by the off-axis measuring unit 91 are P _oas 3x and P _oas 6x, respectively, and the relative positions in the Y direction are P _oas 3y and P _oas 6y, respectively. To do. Similarly, the positions in the X direction of the second marks 511 and 514 detected by the off-axis measuring unit 92 are P _oas 1x and P _oas 4x, respectively, and the relative positions in the Y direction are P _oas 1y and P _oas 4y, respectively. .

In S13, the control unit 8 moves the substrate stage 5b and the original stage 3b so that the alignment measurement unit 2 can detect the second mark. In S14, the control unit 8 causes the alignment measurement unit 2 to observe the second mark and detect the position of the second mark. For example, in FIG. 2, the control unit 8 moves the substrate stage 5b and the original stage 3b, the mark 313 and the second mark 513 on the original are moved by the alignment scope 2a, and the mark 316 on the original is moved by the alignment scope 2b. And the second mark 516 are detected. Then, the alignment measurement unit 2 measures the position of the second mark 513 and the position of the second mark 516, respectively. Here, the positions in the X direction of the second marks 513 and 516 are P _as 3x and P _as 6x, respectively, and the relative positions in the Y direction are P _as 3y and P _as 6y, respectively.

In S15, the control unit 8 calculates the difference between the position of the second mark measured by the off-axis measurement unit and the position of the second mark measured by the alignment measurement unit 2, and corrects the difference to the baseline. Set the correction value to be used. For example, the baseline correction values in the off-axis scopes 91a and 91b of the off-axis measuring unit 91 can be obtained by Expression (1) and Expression (2), respectively. Here, the correction value in the X direction of the base line in the off-axis scope 91a and _P bl 1ax, a correction value in the Y-direction and _P bl 1ay. In addition, the correction value in the X direction of the baseline in the off-axis scope 91b is P _bl 1bx, and the correction value in the Y direction is P _bl 1by.

In S16, the control unit 8 determines whether or not a baseline correction value has been set in all off-axis measurement units. If the baseline correction value is set in all off-axis measurement units, the process proceeds to S17. On the other hand, when the baseline correction value is not set in all the off-axis measurement units, the process returns to S13. In the example described above (see FIG. 2), the baseline correction value in the off-axis measuring unit 92 is not set. Therefore, it returns to S13 and repeats S13-S15. The control unit 8 moves the substrate stage 5b and the original stage 3b, the mark 311 and the second mark 511 on the original are moved by the alignment scope 2a, and the mark 314 and the second mark 514 on the original are moved by the alignment scope 2b. Is detected. The alignment measuring unit 2 measures the position of the second mark 511 (position on the substrate) and the position of the second mark 514 (position on the substrate). Here, the positions in the X direction of the second marks 511 and 514 measured by the alignment measuring unit 2 are P _as 1x and P _as 4x, respectively, and the positions in the Y direction are P _as 1y and P _as 4y, respectively. Then, the baseline correction values in the off-axis scopes 92a and 92b of the off-axis measuring unit 92 can be obtained by Expression (3) and Expression (4), respectively. Here, the correction value in the X direction of the baseline in the off-axis scope 92a is P _bl 2ax, and the correction value in the Y direction is P _bl 2ay. In addition, the correction value in the X direction of the baseline in the off-axis scope 92b is P _bl 2bx, and the correction value in the Y direction is P _bl 2by. In S17, the control unit 8 corrects the baseline using the correction value obtained in S15. Thereby, an error in the position of the second mark can be reduced. Here, in the above description, the alignment measurement unit 2 and the off-axis measurement units 91 and 92 measure the same second mark, but the measurement is not limited to the second mark, and the same first mark is measured. The same mark on the substrate may be measured.

  As described above, the exposure apparatus 100 according to the first embodiment includes the alignment measurement unit 2 and the off-axis measurement units 91 and 92. The alignment measurement unit 2 detects the first mark and the off-axis measurement unit 91. And the detection of the second mark by 92 are performed in parallel. Thereby, the exposure apparatus 100 of 1st Embodiment can align the shot area | region 51 and the area | region 31 on an original plate with high precision, and can improve a throughput compared with the conventional exposure apparatus 300. FIG. . Further, the exposure apparatus 100 according to the first embodiment causes the alignment measurement unit 2 and the off-axis measurement units 91 and 92 to detect the same mark formed on the substrate when determining the baseline correction value. The exposure apparatus 100 sets the difference between the measurement results of the alignment measurement unit 2 and the off-axis measurement units 91 and 92 as the baseline correction value. As a result, even if the baseline fluctuates due to the influence of heat or the like, it is possible to reduce the error in the position of the second mark.

  In the first embodiment, as described above, the alignment measurement unit 2 and the off-axis measurement units 91 and 92 detect the same mark, and the difference between the measurement results is set as the baseline correction value. It is not limited. For example, the amount of movement of the substrate stage 5b when the same mark is detected by the alignment measurement unit 2 and the off-axis measurement units 91 and 92 may be set as a baseline. Then, by setting the baseline periodically using this method, it is possible to reduce the occurrence of an error in the position of the second mark, as in the method for setting the correction value of the baseline.

  In general, a shot area formed on a substrate (for example, a glass plate) is optimized to the size of a flat panel to be produced in order to improve production efficiency. Therefore, the off-axis measuring units 91 and 92 are configured to be movable in a direction (XY direction) parallel to the exposed surface of the substrate in order to match the shot area. Similarly, the alignment measurement unit may also be configured to be movable in a direction (XY direction) parallel to the exposed surface of the substrate.

Second Embodiment
The apparatus configuration and alignment method in the exposure apparatus 200 according to the second embodiment of the present invention will be described with reference to FIG. FIG. 4 is a view showing an exposure apparatus 200 according to the second embodiment. Similar to the exposure apparatus 100 of the first embodiment, the exposure apparatus 200 of the second embodiment includes an illumination optical system 1, an alignment measurement unit 2, a mask stage 3b, a projection optical system 4, a substrate stage 5b, A surface plate 6 and a control unit 8 can be included. In addition, the exposure apparatus 200 of the second embodiment has a different configuration of the off-axis measuring unit compared to the exposure apparatus 100 of the first embodiment, and the off-axis measuring unit 10 of the exposure apparatus 200 includes a plurality of off-axis measuring units. Scopes 10a to 10f are included. Here, in the exposure apparatus 200 of the second embodiment, the configuration other than the off-axis measurement unit 10 is the same as that of the exposure apparatus 100 of the first embodiment and the conventional exposure apparatus 300, and thus description thereof is omitted here. Also in the exposure apparatus 200 of the second embodiment, as in the exposure apparatus 100 of the first embodiment and the conventional exposure apparatus 300, the alignment measurement unit 2 uses the wavelength of light used when exposing the substrate 5a. Light having a wavelength different from that (non-exposure light) is used. Also in the off-axis measuring unit 10 of the second embodiment, light (non-exposure light) having a wavelength different from the wavelength of light used when exposing the substrate 5a is used.

  The off-axis measuring unit 10 includes a plurality (six in the second embodiment) of off-axis scopes 10a to 10f, and each of the plurality of marks provided in the shot area on the substrate is not passed through the projection optical system 4. To detect. Then, the off-axis measuring unit 10 can measure the position of each mark (position on the substrate) using information (baseline) indicating the distance between the alignment measuring unit 2 and the off-axis measuring unit 10. Here, an alignment method in the exposure apparatus 200 of the second embodiment will be described with reference to FIG. FIG. 5A shows the positions of the off-axis scopes 10a to 10f in the off-axis measuring unit 10, and FIG. 5B shows the positions of the alignment scopes 2a and 2b in the alignment measuring unit 2. FIG. ) Indicates the position of the mark on the substrate. The off-axis measuring unit 10 may include, for example, six off-axis scopes 10a to 10f arranged along a direction (X direction) orthogonal to the scanning direction (Y direction). The alignment scopes (2a and 2b) and the off-axis scopes (10a, 10b, 10e, and 10f) are arranged so as to detect different marks from each other in parallel among the plurality of marks on the substrate. Yes.

For example, alignment scope 2a is a mark of columns _{L 3} arranged on the -X direction side of the shot regions 55 and 58, alignment scope 2b is shot regions 55 and 58 columns _{L 4} arranged in the X direction side of the Each mark is detected. Then, alignment measurement unit 2, the mark column L ₃ (e.g., mark 551) and located on the substrate, the mark column L ₄ (e.g., mark 554) for measuring respectively the position on the substrate. Here, the mark on the substrate is detected by the alignment scope 2a and 2b (mark column L ₃ and column L ₄₎ is referred to as the first mark.

Furthermore, off-axis scope 10a is a mark of columns _{L 1} arranged on the -X direction side of the shot regions 56 and 59, off-axis scope 10b, the columns are arranged in the X direction of the shot regions 56 and 59 L ₂ marks are detected. Similarly, off-axis scope 10e is a mark of columns L ₅ arranged on the -X direction side of the shot regions 54 and 57, off-axis scope 10f, the columns arranged in the X direction of the shot regions 54 and 57 to detect the mark of L _6. The off-axis measuring unit 10, the mark column _{L 1} (e.g., mark 563) and located on the substrate, the mark column _{L 2} (for example, mark 566) for measuring respectively the position on the substrate. Similarly, off-axis measuring unit 10, the mark column L ₅ (e.g., mark 543) and located on the substrate, the mark column L ₆ (e.g., mark 546) for measuring respectively the position on the substrate. Here, the marks (columns L ₁ , L ₂ , L ₅ and L ₆ ) on the substrate detected by the off-axis scopes (10a, 10b, 10e and 10f) are referred to as second marks. Is done. In the second embodiment, the off-axis scopes 10c and 10d are not used when measuring the position of the mark on the substrate. This is because the marks in the rows L ₃ and L ₄ are measured by the alignment measuring unit 2. The off-axis scopes 10c and 10d are used when determining a baseline correction value to be described later.

  The control unit 8 is based on the position of the first mark (position on the substrate) measured by the alignment measurement unit 2 and the position of the second mark (position on the substrate) detected by the off-axis measurement unit 10. The shape information of the shot areas 54 to 59 is acquired. Based on the acquired shape information, the moving speed of the original stage 3b and the substrate stage 5b and the projection magnification of the projection optical system 4 are controlled by the control unit 8 so that the mark on the original and the mark on each shot area overlap each other. Scanning exposure of each shot area is performed while controlling. Here, as described in the first embodiment, the shape information of the shot region includes, for example, a rotation component, a shift component, a magnification component, an orthogonality component, and the like in the shot region. In addition, the shift component, the magnification component, and the orthogonality component can each include an X-direction component and a Y-direction component.

  As described above, the exposure apparatus 200 according to the second embodiment includes the alignment measurement unit 2 and the off-axis measurement unit 10, and detects the first mark by the alignment measurement unit 2 and the second by the off-axis measurement unit 10. Mark detection is performed in parallel. In the off-axis measuring unit 10, a plurality of off-axis scopes are arranged along a direction (X direction) orthogonal to the scanning direction. Thereby, the exposure apparatus 200 of 2nd Embodiment can improve a throughput more than the exposure apparatus 100 of 1st Embodiment according to arrangement | positioning of the several shot area | region on a board | substrate.

  Here, a method for acquiring the correction value of the baseline in the exposure apparatus 200 of the second embodiment will be described. First, the control unit 8 moves the substrate stage 5b and the original stage 3b, and causes the alignment scope 2a of the alignment measurement unit 2 to detect the first mark 553 and the alignment scope 2b to detect the first mark 556, respectively. Then, the control unit 8 causes the alignment measurement unit 2 to measure the positions of the first marks 553 and 556 on the substrate. Next, the control unit 8 moves the substrate stage 5b to cause the off-axis scope 10c of the off-axis measuring unit 10 to detect the first mark 553 and the off-axis scope 10d to detect the first mark 556, respectively. Then, the control unit 8 causes the off-axis measurement unit 10 to measure the positions of the first marks 553 and 556 on the substrate. Thereby, the control part 8 can calculate the difference between the position on the board | substrate of the 1st mark measured by the alignment measurement part, and the position on the board | substrate of the 1st mark measured by the off-axis measurement part. . The calculated difference is set as a correction value for correcting the baseline, and the control unit 8 can correct the baseline using the correction value. As a result, errors in the positions of the second marks (563, 566, 543, and 546) detected by the off-axis scope (10a, 10b, 10e, and 10f) and measured by the off-axis measuring unit 10 can be reduced. .

  In the second embodiment, when setting the baseline correction value, only the off-axis scopes 10c and 10d of the off-axis measuring unit 10 are used. However, the present invention is not limited to this. For example, the second mark 563 is detected by the alignment scope 2a and the off-axis scope 10a, and the second mark 566 is detected by the alignment scope 2b and the off-axis scope 10b. Then, the position difference measured by each of the alignment measurement unit 2 and the off-axis measurement unit 10 may be set as a baseline correction value. Similarly, the second mark 543 is detected by the alignment scope 2a and the off-axis scope 10e, and the second mark 546 is detected by the alignment scope 2b and the off-axis scope 10f. Then, the position difference measured by each of the alignment measurement unit 2 and the off-axis measurement unit 10 may be set as a baseline correction value.

In the second embodiment, the off-axis scopes 10c and 10d are not used when measuring the position of the mark on the substrate, but are not limited thereto. For example, the off-axis measuring unit 10 may measure the position of the mark on the substrate using all the off-axis scopes 10a to 10f. When the mark positions are measured using all the off-axis scopes 10a to 10f as described above, the baseline can be corrected and the mark positions on the substrate can be measured in parallel. For example, when detecting the position of the mark by using all of the off-axis scope 10a through 10f, and in parallel, in the alignment measurement unit 2, the alignment scope 2a and 2b mark columns L ₃ and column L ₄ Let each be detected. Then, alignment measurement unit 2 (alignment scope 2a and 2b) off the difference in the measured positions of the marks in column L ₃ and column L ₄ in each of the axis measuring unit 10 (off-axis scope 10c and 10d) the control unit 8 is calculated. The calculated difference is set as a correction value for correcting the baseline, and the control unit 8 can correct the baseline using the correction value. Thereby, it is possible to perform the correction of the baseline and the measurement of the position of the mark on the substrate by the off-axis measuring unit 10 in parallel.

  Furthermore, in the second embodiment, the alignment measurement unit 2 and the off-axis measurement unit 10 detect the same mark, and the difference between the two measurement results is set as the baseline correction value. However, the present invention is not limited to this. . For example, the amount of movement of the substrate stage 5b when the alignment measurement unit 2 and the off-axis measurement unit 10 detect the same mark may be set as the baseline.

<Embodiment of Method for Manufacturing Article>
The method for manufacturing an article according to an embodiment of the present invention is suitable for manufacturing an article such as a microdevice such as a semiconductor device or an element having a fine structure. In the method for manufacturing an article according to the present embodiment, a latent image pattern is formed on the photosensitive agent applied to the substrate using the above-described scanning exposure apparatus (a step of exposing the substrate), and the latent image pattern is formed in this step. Developing the processed substrate. Further, the manufacturing method includes other well-known steps (oxidation, film formation, vapor deposition, doping, planarization, etching, resist stripping, dicing, bonding, packaging, and the like). The method for manufacturing an article according to the present embodiment is advantageous in at least one of the performance, quality, productivity, and production cost of the article as compared with the conventional method.

  As mentioned above, although preferred embodiment of this invention was described, it cannot be overemphasized that this invention is not limited to these embodiment, A various deformation | transformation and change are possible within the range of the summary.

Claims (9)

An exposure apparatus for transferring an original pattern to a shot area of a substrate via a projection optical system,
A first detection unit that detects a first mark among the plurality of marks formed around the shot region on the substrate via the projection optical system;
A second detector for detecting a second mark different from the first mark of detecting the plurality of marks in parallel of the first mark by the first detector without passing through the projection optical system,
Including
And information indicating a distance between the front Symbol the second detector and the first detector, and the detection result of the first detection unit, based on the detection result of the second detection unit, and the master and the shot area An exposure apparatus characterized in that the alignment is performed . Based on the shape information of the shot area obtained from the information indicating the distance, the detection result of the first detection unit, and the detection result of the second detection unit, the pattern of the original plate overlaps the shot area. The exposure apparatus according to claim 1, wherein the alignment is performed. The first detector and the second detector detects respectively in parallel with the second mark and the first mark in one of the shot regions, according to claim 1 or 2, characterized in that Exposure device. The second detection unit, an exposure apparatus according to any one of claims 1 to 3 wherein the detecting the second marks in between the projection optical system and said substrate, characterized in that. Was detected at different timings the same mark among the plurality of marks before and Symbol first detection unit and the second detecting unit, on the basis of the first detector and the second detector, respectively the detection result, the distance obtaining a correction value for correcting the information indicating the exposure apparatus according to any one of claims 1 to 4, characterized in that. Before SL is moved in order to detect the same mark among the plurality of marks and the second detecting unit and the first detecting portion, the amount of movement of the substrate stage which holds the substrate, as information indicating the distance the exposure apparatus according to any one of claims 1 to 4 to set, characterized in that. The second detection unit, an exposure apparatus according to any one of claims 1 to 6 wherein the movable in the exposure surface in a direction parallel to the substrate, it is characterized. The said 1st detection part detects the said 1st mark using the light which has a wavelength different from the wavelength of the light used in order to transfer the pattern of the said original plate to the said board | substrate. 8. The exposure apparatus according to any one of items 7 to 7 . An exposure step of exposing the substrate using the exposure apparatus according to any one of claims 1 to 8 ,
A development step of developing the substrate exposed in the exposure step ,
A method for producing an article, comprising producing an article from the substrate developed in the developing step .

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