CN113495437A - Exposure apparatus, pattern forming apparatus, and exposure method - Google Patents
Exposure apparatus, pattern forming apparatus, and exposure method Download PDFInfo
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- CN113495437A CN113495437A CN202110353498.XA CN202110353498A CN113495437A CN 113495437 A CN113495437 A CN 113495437A CN 202110353498 A CN202110353498 A CN 202110353498A CN 113495437 A CN113495437 A CN 113495437A
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7073—Alignment marks and their environment
- G03F9/708—Mark formation
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7073—Alignment marks and their environment
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
- G03F7/70475—Stitching, i.e. connecting image fields to produce a device field, the field occupied by a device such as a memory chip, processor chip, CCD, flat panel display
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70716—Stages
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70775—Position control, e.g. interferometers or encoders for determining the stage position
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7073—Alignment marks and their environment
- G03F9/7076—Mark details, e.g. phase grating mark, temporary mark
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7073—Alignment marks and their environment
- G03F9/7084—Position of mark on substrate, i.e. position in (x, y, z) of mark, e.g. buried or resist covered mark, mark on rearside, at the substrate edge, in the circuit area, latent image mark, marks in plural levels
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7088—Alignment mark detection, e.g. TTR, TTL, off-axis detection, array detector, video detection
Abstract
The invention relates to an exposure apparatus, a pattern forming apparatus and an exposure method. The degradation of the accuracy of pattern formation in the MMG technique is suppressed. An exposure apparatus for scanning and exposing a 1 st pattern on a substrate includes: a mark forming part for forming a plurality of alignment marks on the substrate; a 1 st measuring section that measures positions of a plurality of alignment marks formed by the mark forming section; and an output section that outputs the positional information of the alignment marks measured by the 1 st measurement section so as to be usable in another exposure apparatus that exposes the 2 nd pattern, the mark forming section forming a 1 st mark group including at least 2 alignment marks at a 1 st substrate position, then forming a 2 nd mark group including at least 2 alignment marks at a 2 nd substrate position after moving the substrate in a direction including a component perpendicular to a straight line connecting the 2 alignment marks of the 1 st mark group, and performing scanning exposure on the 1 st pattern in a direction moving the substrate from the 1 st substrate position to the 2 nd substrate position.
Description
Technical Field
The present invention relates to an exposure apparatus that exposes a pattern on a substrate, a pattern forming apparatus that forms a pattern, and an exposure method.
Background
In recent years, Flat Panel Displays (FPDs) have been increased in size, and there is a need for a substrate that is used as a base of the panel without waste. Therefore, a technique called MMG (Multi Model on Glass) has been proposed in which a plurality of panels having different sizes are formed on 1 substrate (see patent document 1). In such MMG technology, the size and position of the entire plurality of patterns formed by 1 layer of a plurality of devices on a substrate are used as an evaluation index of the accuracy of pattern formation.
Documents of the prior art
Patent document 1: japanese patent laid-open publication No. 2005-092137
Disclosure of Invention
Problems to be solved by the invention
In a plurality of devices used in MMG technology, sometimes individual differences are generated in the formation characteristics of patterns. In this case, the positional relationship of the plurality of patterns formed by the plurality of devices is shifted from the target position, and it is difficult to form the pattern on the substrate with high accuracy.
Accordingly, an object of the present invention is to provide a technique advantageous for suppressing a decrease in the accuracy of pattern formation in the MMG technique.
Means for solving the problems
In order to achieve the above object, an exposure apparatus according to one aspect of the present invention is an exposure apparatus that performs scanning exposure of a 1 st pattern on a substrate and performs scanning exposure of the 1 st pattern before exposure in another exposure apparatus that performs exposure of a 2 nd pattern in a region different from a region where the 1 st pattern is exposed, the exposure apparatus including: a mark forming part for forming a plurality of alignment marks on the substrate; a 1 st measuring section that measures positions of a plurality of alignment marks formed by the mark forming section; and an output unit that outputs the positional information of the alignment marks measured by the 1 st measuring unit so that the positional information of the alignment marks measured by the 1 st measuring unit can be used in another exposure apparatus that exposes the 2 nd pattern, wherein the mark forming unit forms a 1 st mark group including at least 2 alignment marks at a 1 st substrate position, and then forms a 2 nd mark group including at least 2 alignment marks at a 2 nd substrate position after moving the substrate in a direction including a component perpendicular to a straight line connecting the 2 alignment marks of the 1 st mark group, and the exposure apparatus performs scanning exposure on the 1 st pattern in a direction in which the substrate is moved from the 1 st substrate position to the 2 nd substrate position.
Other objects and other aspects of the present invention will become more apparent from the following description of preferred embodiments with reference to the accompanying drawings.
Further features of the invention will become apparent from the following description of exemplary embodiments (with reference to the attached drawings).
ADVANTAGEOUS EFFECTS OF INVENTION
According to the present invention, for example, it is possible to provide a technique advantageous for suppressing a decrease in the accuracy of pattern formation in the MMG technique.
Drawings
Fig. 1 is a schematic diagram showing the overall structure of the forming system.
Fig. 2 is a diagram showing the structure of the 1 st exposure apparatus.
Fig. 3 is a graph showing an index of pattern formation accuracy.
Fig. 4 is a diagram illustrating pattern formation in the comparative example.
Fig. 5 is a diagram showing an alignment mark forming process in the comparative example.
Fig. 6 is a diagram illustrating pattern formation in 4 alignment marks.
Fig. 7 is a diagram showing positional displacement of the substrate that can be discriminated by 4 alignment marks.
Fig. 8 is a flowchart illustrating the pattern formation process.
Fig. 9 is a diagram showing a substrate on which 6 alignment marks are formed.
(symbol description)
10: the 1 st exposure device; 11: a pattern forming section; 12: a mark forming part; 13: a mark measuring section; 20: the 2 nd exposure device; 21: a pattern forming section; 23: a mark measuring section; 30: a conveying part; 40: a main control unit; 100: a system is formed.
Detailed Description
Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.
< embodiment 1 >
A forming system according to embodiment 1 of the present invention will be described. The forming system of the present embodiment is a system that executes a so-called MMG technique of forming patterns on mutually different regions in 1 layer on a substrate using a plurality of patterning devices, respectively. Examples of the pattern forming apparatus include an exposure apparatus that performs scanning exposure on a substrate to transfer a pattern of a mask onto the substrate, an imprint apparatus that forms a pattern of an imprint material on the substrate using a mold, and a drawing apparatus that forms a pattern on the substrate using a charged particle beam.
The "1 layer on the substrate" to which the MMG technique according to the present invention is applied may be, for example, a 1 st layer initially formed on a bare substrate on which a pattern has not been formed, but is not limited thereto, and may be a 2 nd layer or later. In this embodiment, an example in which a latent image pattern is formed on 1 resist layer on a substrate using a formation system having a plurality of exposure devices will be described. Here, as the substrate, for example, a glass plate, a semiconductor wafer, or the like can be applied, but in this embodiment, an example in which a glass plate is used as the substrate will be described. Hereinafter, the term "1 layer on the substrate" may be simply referred to as "on the substrate".
Fig. 1 is a schematic diagram showing the overall structure of a forming system 100 of the present embodiment. The direction perpendicular to the surface of the substrate W is referred to as the Z direction, and the direction perpendicular to the Z direction is referred to as the X, Y direction. The forming system 100 includes a 1 st exposure apparatus 10, a 2 nd exposure apparatus 20, a conveyance unit 30, and a main control unit 40. The transfer unit 30 transfers the substrate W to the 1 st exposure apparatus 10 and the 2 nd exposure apparatus 20. The main control unit 40 is constituted by a computer having a CPU and a memory, for example, and controls the entire system 100 as a whole. The main control unit 40 controls the transfer of data and information between the 1 st exposure apparatus 10 and the 2 nd exposure apparatus 20.
Fig. 2 is a diagram showing a configuration example of the 1 st exposure apparatus 10. The 1 st exposure apparatus 10 includes a pattern forming section 11, a mark forming section 12, a mark measuring section 13, and a control section 14. The pattern forming unit 11 includes a light source 11a, an illumination optical system 11b, a mask stage 11c, a projection optical system 11d, and a substrate stage 11 e. The mask stage 11c is a stage capable of moving while holding the mask M. The illumination optical system 11b illuminates the mask M with light from the light source 11 a. The substrate mounting table 11e is a movable mounting table that can hold the substrate W. The mask M and the substrate W are disposed at optically conjugate positions with the projection optical system 11d interposed therebetween. The projection optical system 11d projects the pattern of the mask M illuminated by the illumination optical system 11b onto the substrate W, and a latent image pattern is formed on the resist layer on the substrate W.
The mark forming unit 12 forms an alignment mark on the substrate W based on information indicating target position coordinates at which the alignment mark is to be formed. The mark measuring section 13 measures the position of the alignment mark formed by the mark forming section 12. The control unit 14 is constituted by a computer having a CPU, a memory, and the like, for example, and controls the pattern forming unit 11, the mark forming unit 12, and the mark measuring unit 13 in accordance with the apparatus coordinate system (that is, controls each process performed by the 1 st exposure apparatus 10). The control unit 14 functions as an output unit that outputs data and information obtained by the 1 st exposure apparatus 10 so that the data and information obtained by the 1 st exposure apparatus 10 can be used by the 2 nd exposure apparatus 20. In the present embodiment, the control unit 14 is provided independently of the main control unit 40, but may be provided as a component of the main control unit 40.
The 2 nd exposure apparatus 20 includes a pattern forming section 21, a mark measuring section 23, and a control section 24. The 2 nd exposure apparatus 20 of the present embodiment is different from the 1 st exposure apparatus 10 in that a mark forming portion is not provided, but the other configurations are the same. That is, the pattern forming section 21 and the mark measuring section 23 of the 2 nd exposure apparatus 20 are configured in the same manner as the pattern forming section 11 and the mark measuring section 13 of the 1 st exposure apparatus 10, respectively. In addition, the 2 nd exposure apparatus 20 may be provided with a mark forming portion. The pattern forming section 21 forms a latent image pattern in, for example, an exposure region different from an exposure region of a pattern formed on the substrate W by the 1 st exposure device 10. The mark measuring section 23 measures the position of the alignment mark formed by the mark forming section 12 of the 1 st exposure apparatus 10. The control unit 24 is constituted by a computer having a CPU, a memory, and the like, for example, and controls the pattern forming unit 21 and the mark measuring unit 23 in accordance with the apparatus coordinate system (that is, controls each process performed by the 2 nd exposure apparatus 20). In the present embodiment, the control unit 24 is provided separately from the main control unit 40, but may be provided as a component of the main control unit 40.
[ accuracy of pattern formation ]
Next, the accuracy of forming a pattern required for the forming system 100 will be described using fig. 3. The 1 st pattern P1 is formed by the pattern forming part 11 of the 1 st exposure device 10. The 2 nd pattern P2 is formed in an exposure region different from the exposure region where the 1 st pattern P1 is formed by the pattern forming section 21 of the 2 nd exposure apparatus 20. In the example shown in fig. 3, 1 of the 1 st pattern P1 and the 2 nd pattern P2 is formed on a rectangular substrate W in the same size, but the size and number of the patterns may be different from each other.
The accuracy of forming the pattern required for the forming system 100 can be evaluated from the size and position of the entire pattern formed on the substrate. The size of the entire pattern formed on the substrate can be defined by, for example, the 1 st index TP (Total Pitch) indicating the length of the diagonal line of the entire pattern formed on the substrate. In the present embodiment, the length of a straight line connecting the lower right end point EP1 of the 1 st pattern P1 formed on the substrate by the 1 st exposure apparatus 10 and the upper left end point EP2 of the 2 nd pattern P2 formed on the substrate by the 2 nd exposure apparatus 20 can be determined as the 1 st index TP. On the other hand, the position of the entire pattern formed on the substrate can be specified by, for example, the 2 nd index CS (Center Shift) indicating the position of the Center point of the entire pattern formed on the substrate. In the present embodiment, the center point of the straight line connecting the end point EP1 and the end point EP2 can be determined as the 2 nd index CS.
[ comparative example ]
As a comparative example of the present embodiment, a case where 3 alignment marks are formed on the substrate W in the pattern forming section 11 of the 1 st exposure apparatus 10 is exemplified. In the example shown in fig. 4, 3 marks AM1 to AM3 are formed near the four corners of the rectangular substrate W so as not to be arranged on the same straight line. When 3 marks AM1 to AM3 are formed on substrate W in this manner, the X-direction displacement, the Y-direction displacement, the rotation about the Z-axis, the X-direction magnification, and the Y-direction magnification of substrate W can be determined from the measurement results of the positions of 3 marks AM1 to AM 3.
In the forming system 100, it is necessary to form a pattern on the substrate W so that the 1 st index TP and the 2 nd index CS fall within the allowable ranges. When there are 2 mark forming portions 12, first, as shown in fig. 5(a), mark AM1 and mark AM2 are formed simultaneously. Next, as shown in fig. 5(b), a process of forming the mark AM3 by moving the substrate mounting table 11e holding the substrate W in the Y direction is considered.
However, in the 1 st exposure apparatus 10, as shown in fig. 5(c), an error may occur due to movement of the substrate mounting table 11e in a direction shifted from the Y direction, that is, an error due to drift of the substrate mounting table 11 e. Hereinafter, this error is referred to as a drift of the substrate mounting table 11 e. When there is a drift of the substrate mounting table 11e, the position where the mark AM3 is formed at a position shifted from the position where it should be formed.
From the measurement results of the positions of the marks AM1 to AM3 thus formed, the drift of the substrate mounting table 11e cannot be accurately obtained. Therefore, it may be difficult to form a pattern on the substrate W so that the 1 st index TP and the 2 nd index CS fall within the allowable range. As a specific example, the control unit 24 may erroneously determine the drift of the substrate mounting table 11e and the deviation in the rotation direction about the Z axis when the substrate W is mounted on the substrate mounting table 11e, which may reduce the pattern forming accuracy. Further, in the case where the substrate mounting table drifts in the 2 nd exposure apparatus 20 or in both the 1 st exposure apparatus 10 and the 2 nd exposure apparatus 20, the pattern forming accuracy may be lowered.
[ Pattern Forming treatment in the present embodiment ]
In the present embodiment, in order to determine the drift of the substrate mounting table 11e, the formation of 4 marks AM1 to AM4 as shown in fig. 6 is performed instead of the formation of 3 alignment marks as shown in fig. 4. In order to improve the correction accuracy of the pattern formation, it is preferable to form 4 marks AM1 to AM4 near the four corners of the substrate W, and to form a region connecting the 4 marks AM1 to AM4 so as to include exposure regions exposed by the 1 st exposure apparatus 10 and the 2 nd exposure apparatus 20. By measuring the 4 alignment marks, the drift of the substrate mounting table 11e can be obtained with high accuracy. Specifically, the control unit 24 can determine that there is a drift of the substrate mounting table 11e as shown in fig. 7(a) and a deviation in the rotation direction around the Z axis when the substrate W is mounted on the substrate mounting table 11e as shown in fig. 7 (b). Thus, even when the substrate mounting table 11e drifts, the pattern formation accuracy can be suppressed from being lowered by performing the correction corresponding to the drift of the substrate mounting table 11e by the 2 nd exposure device 20 controlled by the control unit 24 at the time of pattern formation.
As an example of a method of correcting the position of pattern formation, the control section 24 controls driving and rotation of an optical element (for example, 2 parallel plates) which is one of the constituent elements of the projection optical system of the 2 nd exposure apparatus 20. By driving and rotating the optical element, the exposure position on the substrate W can be corrected (for example, correction of the magnification in the Y direction which is the direction of scanning exposure and the X direction which is the direction perpendicular to the direction of scanning exposure).
In the 1 st exposure apparatus 10 and the 2 nd exposure apparatus 20 used in the formation system 100, there may be individual differences in the shift of the exposure center unique to the apparatuses. The characteristic is, for example, an error in the apparatus coordinate system or an error generated when the substrate W is placed. In this way, when the 1 st exposure apparatus 10 and the 2 nd exposure apparatus 20 generate individual differences in characteristics, the positional relationship of the 1 st pattern P1 formed by the 1 st exposure apparatus 10 and the 2 nd pattern P2 formed by the 2 nd exposure apparatus 20 deviates from the target positional relationship. As a result, the allowable range of the 1 st index TP, which is the size of the entire pattern, and the 2 nd index CS, which is the position of the entire pattern, may not be included. For example, even if the accuracy required for the 1 st index TP is within 10 μm, the allowable range is not included.
Therefore, in the forming system 100 of the present embodiment, the difference between the position of the alignment mark measured by the mark measuring unit 13 of the 1 st exposure apparatus 10 and the position of the alignment mark measured by the mark measuring unit 23 of the 2 nd exposure apparatus 20 is obtained. Based on the difference, the exposure area of the 2 nd pattern P2 formed on the substrate W is corrected in the coordinate system of the 2 nd exposure apparatus 20. Specifically, the exposure region of the 2 nd pattern P2 formed on the substrate W is determined so that the deviation of the positional relationship of the 1 st pattern P1 and the 2 nd pattern P2 due to the individual difference in the pattern forming characteristics in the 1 st exposure apparatus 10 and the 2 nd exposure apparatus 20 is corrected.
Further, although the exposure region of the 2 nd pattern P2 is corrected by differentiating in the present embodiment, for example, a method of determining the exposure regions of the 1 st pattern P1 and the 2 nd pattern P2 in each of the 1 st exposure apparatus 10 and the 2 nd exposure apparatus 20 is also possible.
Next, a pattern forming process on the substrate W in the forming system 100 according to the present embodiment will be described with reference to fig. 8. Fig. 8 is a flowchart illustrating a pattern forming process on the substrate W according to the present embodiment. The respective steps of the flowchart shown in fig. 8 can be executed under the control of the main control section 40. In fig. 8, the case where 2 mark forming portions 12 are assumed, but the number of mark forming portions 12 may be 1 or 3 or more. In fig. 8, a case where 2 mark measuring units 13 and 23 are assumed, but the number of mark measuring units 13 may be 1 or 3 or more.
In step S11, the substrate W is conveyed to the 1 st exposure apparatus 10 by the conveying unit 30. In step S12, based on the information indicating the target position coordinates to be formed, mark AM1 and mark AM2 (mark group 1) are simultaneously formed on substrate W by mark forming unit 12 of exposure apparatus 1, in the coordinate system of exposure apparatus 1, 10. That is, at the target position coordinates in the coordinate system of the 1 st exposure apparatus 10, the marker AM1 and the marker AM2 (1 st marker group) are formed.
In step S13, the positions of the mark AM1 and the mark AM2 (1 st mark group) formed on the substrate W in the step S12 are measured by the mark measuring unit 13 of the 1 st exposure apparatus 10 in the coordinate system of the 1 st exposure apparatus 10.
In step S14, the substrate mounting table 11e holding the substrate W is moved to move the substrate W to the substrate position for forming the mark AM3 and the mark AM4 (the 2 nd mark group).
In step S15, based on the information indicating the target position coordinates to be formed, mark AM3 and mark AM4 (group 2 mark) are simultaneously formed on substrate W by mark forming unit 12 of 1 st exposure apparatus 10 in the coordinate system of 1 st exposure apparatus 10. That is, at the target position coordinates in the coordinate system of the 1 st exposure apparatus 10, the marker AM3 and the marker AM4 (2 nd marker group) are formed. At this time, when there is a drift of the substrate mounting table 11e, as shown in fig. 7(a), the marks AM3 and AM4 (2 nd mark group) are formed at positions shifted from the positions to be formed originally.
In step S16, the positions of the mark AM3 and the mark AM4 (2 nd mark group) formed on the substrate W in the step S15 are measured by the mark measuring unit 13 of the 1 st exposure apparatus 10 in the coordinate system of the 1 st exposure apparatus 10. By the process at S13 and the process at S16, marker coordinate information C1 indicating the position coordinates of the markers AM1 to AM4 in the coordinate system of the 1 st exposure apparatus 10 can be obtained. The mark coordinate information C1 includes an error component CM1 that is inherently generated in the 1 st exposure apparatus 10 and an alignment mark forming error component CMX caused by the mark forming unit 12.
In step S17, the 1 st pattern P1 is formed on the substrate W by the pattern forming unit 11 of the 1 st exposure apparatus 10 in the coordinate system of the 1 st exposure apparatus 10 based on the position information indicating the target position coordinates at which the 1 st pattern P1 is to be formed.
In step S21, the transfer unit 30 transfers the substrate W from the 1 st exposure apparatus 10 to the 2 nd exposure apparatus 20. In step S22, the positions of the marks AM1 to AM4 (the 1 st mark group and the 2 nd mark group) formed on the substrate W in the step S12 and the step S15 are measured by the mark measuring unit 23 of the 2 nd exposure apparatus 20 in the coordinate system of the 2 nd exposure apparatus 20. Thus, marker coordinate information C2 indicating the position coordinates of markers AM1 to AM4 (the 1 st marker group and the 2 nd marker group) in the coordinate system of the 2 nd exposure apparatus 20 can be obtained. The mark coordinate information C2 includes an error component CM2 inherently generated in the 2 nd exposure apparatus 20 and an alignment mark forming error component CMX caused by the mark forming unit 12.
In step S23, a correction value CV used when forming the 2 nd pattern P2 on the substrate W is obtained in the coordinate system of the 2 nd exposure apparatus 20. The correction value CV is used to correct individual differences in the characteristics of the 1 st exposure apparatus 10 and the 2 nd exposure apparatus 20, that is, the difference between the error inherently generated in the 1 st exposure apparatus 10 and the error inherently generated in the 2 nd exposure apparatus 20, and is obtained by the following equation (1).
CV＝C2-C1
＝(CM2+CMX)-(CM1+CMX)
＝CM2-CM1…(1)
In the equation (1), the difference between the marker coordinate information C1 obtained by the 1 st exposure apparatus 10 in the step S16 and the marker coordinate information C2 obtained by the 2 nd exposure apparatus 20 in the step S22 is obtained as the correction value CV. The mark coordinate information C1 and the mark coordinate information C2 collectively include a forming error component CMX of the alignment mark. Therefore, the correction value CV is a difference between the error component CM1 inherently generated in the 1 st exposure apparatus 10 and the error component CM2 inherently generated in the 2 nd exposure apparatus 20 after the formation error component CMX of the alignment mark is removed. Therefore, when the formation error component CMX of the alignment mark by the mark forming portion 12 is generated, the correction based on the difference in the present embodiment is preferable.
In step S24, the 2 nd pattern P2 is formed on the substrate W by the pattern forming section 21 of the 2 nd exposure apparatus 20 in the coordinate system of the 2 nd exposure apparatus 20 based on the position information indicating the target position coordinates at which the 2 nd pattern P2 is to be formed. At this time, the position of the 2 nd pattern P2 formed on the substrate W is determined in the coordinate system of the 2 nd exposure apparatus 20 based on the correction value CV obtained in the step of S23. As a result, the 1 st index TP, which is the size of the entire pattern, and the 2 nd index CS, which is the position of the entire pattern, can be brought into the allowable ranges. In step S25, the substrate W is carried out from the 2 nd exposure apparatus 20 by the carrying unit 30.
As described above, the forming system 100 of the present embodiment determines the position of the 2 nd pattern P2 formed on the substrate W by the 2 nd exposure apparatus 20 based on the difference between the marker coordinate information C1 obtained by the 1 st exposure apparatus 10 and the marker coordinate information C2 obtained by the 2 nd exposure apparatus 20. Further, since the drift of the substrate mounting table 11e can be obtained by forming 4 alignment marks as shown in fig. 6, it is possible to prevent the accuracy of pattern formation by the MMG technique from being lowered.
As another effect of the present embodiment, compared to the case where the number of alignment marks is 3, the correction accuracy of each correction component (in particular, the magnification of the substrate W in the X direction and the magnification of the substrate W in the Y direction) can be improved, and an effect of improving the pattern formation accuracy by the MMG technique can also be expected.
In addition, the number of alignment marks formed in this embodiment may be 5 or more. For example, as shown in fig. 9, when there are 6 alignment marks, the marks AM5 and AM6 exist between the marks AM1 to AM4, and therefore, the correction component can be increased. Specifically, the nonlinear components of the magnification of the substrate W in the X direction and the magnification in the Y direction can be corrected. In this way, by increasing the number of alignment marks, an effect of improving the accuracy of pattern formation by the MMG technique can also be expected.
< embodiment 2 >
In embodiment 1, a case where marks AM1 to AM4 are formed on substrate W by mark forming unit 12 of exposure apparatus 1 will be described. In contrast, in the present embodiment, a case where marks AM1 to AM4 are formed on substrate W by a device different from exposure device 1 and exposure device 10 will be described. That is, in a state where marks AM1 to AM4 are formed on substrate W, substrate W is conveyed to exposure apparatus 1 by conveyance unit 30. In this case, the mark forming section 12 of the 1 st exposure apparatus 10 shown in fig. 2 may not be provided. As the reason for providing the mark forming section 12, for example, when pattern forming accuracy becomes insufficient in an alignment mark formed by a device different from the 1 st exposure device 10, the mark forming section 12 may be provided to form the alignment mark on the substrate W again.
The patterning process on the substrate W in the forming system 100 of the present embodiment is the same except for the alignment mark forming step. Except for the step S12 and the step S15 in the flowchart of embodiment 1 shown in fig. 8, the same applies.
As described above, in the present embodiment, the alignment mark is formed in the external apparatus, and the exposure area of the 2 nd pattern P2 is determined based on the difference between the mark coordinate information C1 in the 1 st exposure apparatus 10 and the mark coordinate information C2 in the 2 nd exposure apparatus 20. Further, since the drift of the substrate mounting table 11e can be obtained by forming 4 alignment marks, the accuracy of pattern formation by the MMG technique can be prevented from being lowered.
As another effect of the present embodiment, compared to the case where the number of alignment marks is 3, the correction accuracy of each correction component (in particular, the magnification of the substrate W in the X direction and the magnification of the substrate W in the Y direction) can be improved, and an effect of improving the pattern formation accuracy by the MMG technique can also be expected.
In addition, the number of alignment marks formed in this embodiment may be 5 or more. For example, as shown in fig. 9, when there are 6 alignment marks, the marks AM5 and AM6 exist between the marks AM1 to AM4, and therefore, the correction component can be increased. Specifically, the nonlinear components of the magnification of the substrate W in the X direction and the magnification in the Y direction can be corrected. In this way, by increasing the number of alignment marks, an effect of improving the accuracy of pattern formation by the MMG technique can also be expected.
< embodiment of Process for producing article >
The method for manufacturing an article according to an embodiment of the present invention is suitable for manufacturing a Flat Panel Display (FPD), for example. The method of manufacturing an article according to the present embodiment includes a step of forming a latent image pattern in a photosensitive agent applied to a substrate (a step of exposing the substrate) using the exposure apparatus, and a step of developing the substrate on which the latent image pattern has been formed in the step. The above-described manufacturing method includes other known steps (oxidation, film formation, vapor deposition, doping, planarization, etching, resist stripping, dicing, bonding, packaging, and the like). The method for manufacturing an article according to the present embodiment is advantageous in at least 1 of the performance, quality, productivity, and production cost of the article, as compared with the conventional method.
< other examples >
The present invention can also be realized by a process of supplying a program that realizes 1 or more functions of the above-described embodiments to a system or an apparatus via a network or a storage medium, reading the program by 1 or more processors in a computer of the system or the apparatus, and executing the program. Alternatively, the function may be realized by a circuit (e.g., ASIC) that realizes 1 or more functions.
While the preferred embodiments of the present invention have been described above, it is a matter of course that the present invention is not limited to these embodiments, and various modifications and changes can be made within the scope of the gist thereof.
Claims (17)
1. An exposure apparatus that performs scanning exposure of a 1 st pattern on a substrate and performs scanning exposure of the 1 st pattern before exposure in another exposure apparatus that performs exposure of a 2 nd pattern in a region different from a region where the 1 st pattern is exposed, the exposure apparatus comprising:
a mark forming part for forming an alignment mark on a substrate;
a measuring section that measures a position of the alignment mark formed by the mark forming section; and
an output section that outputs the positional information of the alignment mark measured by the measuring section so that the positional information of the alignment mark measured by the measuring section can be utilized in another exposure apparatus that exposes the 2 nd pattern,
the mark forming section forms a 1 st mark group including at least 2 alignment marks at a 1 st substrate position, then forms a 2 nd mark group including at least 2 alignment marks at a 2 nd substrate position after moving the substrate in a direction including a component perpendicular to a straight line connecting the 2 alignment marks of the 1 st mark group,
the exposure device performs scanning exposure on the 1 st pattern in a direction in which the substrate is moved from the 1 st substrate position to the 2 nd substrate position.
2. The exposure apparatus according to claim 1, further comprising a plurality of mark forming portions that form alignment marks on the substrate,
at least 2 alignment marks of the 1 st mark group are simultaneously formed by the plurality of mark forming parts, and at least 2 alignment marks of the 2 nd mark group are simultaneously formed by the plurality of mark forming parts.
3. The exposure apparatus according to claim 1, wherein the 1 st pattern is exposed without using position information of an alignment mark measured by the measurement section.
4. The exposure apparatus according to claim 1, wherein a region of the alignment mark connecting the 1 st mark group and the 2 nd mark group includes a region of the substrate where the 1 st pattern and the 2 nd pattern are exposed.
5. The exposure apparatus according to claim 1, wherein the exposure of the 1 st pattern and the 2 nd pattern is exposure of a latent image pattern on the substrate.
6. An exposure apparatus, characterized in that after exposure in another exposure apparatus which exposes a 1 st pattern on a substrate, a 2 nd pattern is scan-exposed in a region different from a region where the 1 st pattern is exposed,
the exposure apparatus has a measurement section that measures positions of a 1 st mark group including at least 2 alignment marks formed on a substrate and positions of a 2 nd mark group including at least 2 alignment marks formed in a state where the substrate is moved in a direction including a component perpendicular to a straight line connecting the 2 alignment marks of the 1 st mark group,
the exposure device performs scanning exposure on the 2 nd pattern based on the position information of the 1 st mark group and the 2 nd mark group measured by the other exposure device and the position information of the 1 st mark group and the 2 nd mark group measured by the measurement unit.
7. The exposure apparatus according to claim 6, wherein the 2 nd pattern is subjected to scanning exposure in a direction moving from a substrate position at the time of measuring the 1 st mark group by the measurement section to a substrate position at the time of measuring the 2 nd mark group.
8. The exposure apparatus according to claim 6, further comprising a substrate stage that holds the substrate,
the exposure device corrects a displacement of the substrate from a target position caused by the movement of the substrate mounting table, and performs scanning exposure of the 2 nd pattern on the substrate.
9. The exposure apparatus according to claim 6, wherein the 2 nd pattern is scan-exposed on the substrate based on a result of determining whether the substrate is displaced from a target position in a rotation direction when the substrate is mounted on the substrate mounting stage or displaced from the target position by movement of the substrate mounting stage.
10. The exposure apparatus according to claim 6, wherein the 2 nd pattern is scan-exposed on the substrate based on a difference between the positions of the 1 st mark group and the 2 nd mark group measured by the other exposure apparatus and the positions of the 1 st mark group and the 2 nd mark group measured by the measurement unit.
11. The exposure apparatus according to claim 6, wherein a region of the alignment mark connecting the 1 st mark group and the 2 nd mark group includes a region of the substrate where the 1 st pattern and the 2 nd pattern are exposed.
12. The exposure apparatus according to claim 6, wherein the exposure of the 1 st pattern and the 2 nd pattern is exposure of a latent image pattern on the substrate.
13. A pattern forming apparatus characterized in that a 1 st pattern is formed on a substrate, and the 1 st pattern is formed before pattern formation in another pattern forming apparatus that forms a 2 nd pattern in a region different from a region where the 1 st pattern is formed, the pattern forming apparatus having:
a mark forming part for forming an alignment mark on a substrate;
a measuring section that measures a position of the alignment mark formed by the mark forming section; and
an output section that outputs the positional information of the alignment mark measured by the measuring section so that the positional information of the alignment mark measured by the measuring section can be utilized in another pattern forming apparatus that forms the 2 nd pattern,
the mark forming section forms a 1 st mark group including at least 2 alignment marks at a 1 st substrate position, and then forms a 2 nd mark group including at least 2 alignment marks at a 2 nd substrate position after moving the substrate in a direction including a component perpendicular to a straight line connecting the 2 alignment marks of the 1 st mark group.
14. A pattern forming apparatus, characterized in that after pattern formation in another pattern forming apparatus that forms a 1 st pattern on a substrate, a 2 nd pattern is formed in a region different from a region where the 1 st pattern is formed,
the pattern forming apparatus has a measuring section that measures positions of a 1 st mark group including at least 2 alignment marks formed on a substrate and positions of a 2 nd mark group including at least 2 alignment marks formed in a state where the substrate is moved in a direction including a component perpendicular to a straight line connecting the 2 alignment marks of the 1 st mark group,
the pattern forming apparatus forms the 2 nd pattern based on the position information of the 1 st mark group and the 2 nd mark group measured by the other pattern forming apparatus and the position information of the 1 st mark group and the 2 nd mark group measured by the measuring unit.
15. An exposure method is characterized in that a pattern is exposed on a substrate by a 1 st step of exposing a 1 st pattern on the substrate by a 1 st exposure device and a 2 nd step of exposing a 2 nd pattern in a region on the substrate different from a region where the 1 st pattern is exposed by a 2 nd exposure device,
the step 1 includes:
a 1 st mark forming step of forming at least 2 alignment marks on a 1 st substrate at a 1 st substrate position;
a 1 st measurement step of measuring positions of at least 2 alignment marks formed in the 1 st mark forming step;
a moving step of moving the substrate in a direction including a component perpendicular to a straight line connecting the 2 alignment marks formed in the 1 st mark forming step;
a 2 nd mark forming step of forming at least 2 alignment marks on the substrate at the substrate position moved in the moving step;
a 2 nd measurement step of measuring positions of at least 2 alignment marks formed in the 2 nd mark formation step; and
a 1 st exposure step of exposing the 1 st pattern on the substrate while scanning the substrate in a direction in which the substrate is moved in the moving step,
the 2 nd step includes:
a 3 rd measuring step of measuring the positions of the alignment marks measured in the 1 st and 2 nd measuring steps; and
and a 2 nd exposure step of performing scanning exposure of the 2 nd pattern on the substrate based on the measurement results of the alignment marks in the 1 st measurement step, the 2 nd measurement step, and the 3 rd measurement step.
16. A method of manufacturing an article, comprising:
exposing a pattern on a substrate by using the exposure method according to claim 15; and
a step of processing the substrate after the pattern exposure in the step,
the manufacturing method manufactures an article from the substrate subjected to the treatment.
17. A storage medium storing a program for executing a 1 st process of exposing a 1 st pattern on a substrate by a 1 st exposure device and a 2 nd process of exposing a 2 nd pattern in a region on the substrate different from a region where the 1 st pattern is exposed by a 2 nd exposure device,
the step 1 includes:
a 1 st mark forming step of forming at least 2 alignment marks on a 1 st substrate at a 1 st substrate position;
a 1 st measurement step of measuring positions of at least 2 alignment marks formed in the 1 st mark forming step;
a moving step of moving the substrate in a direction including a component perpendicular to a straight line connecting the 2 alignment marks formed in the 1 st mark forming step;
a 2 nd mark forming step of forming at least 2 alignment marks on the substrate at the substrate position moved in the moving step;
a 2 nd measurement step of measuring positions of at least 2 alignment marks formed in the 2 nd mark formation step; and
a 1 st exposure step of exposing the 1 st pattern on the substrate while scanning the substrate in a direction in which the substrate is moved in the moving step,
the 2 nd step includes:
a 3 rd measuring step of measuring the positions of the alignment marks measured in the 1 st and 2 nd measuring steps; and
and a 2 nd exposure step of performing scanning exposure of the 2 nd pattern on the substrate based on the measurement results of the alignment marks in the 1 st measurement step, the 2 nd measurement step, and the 3 rd measurement step.
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| JP2020-069429 | 2020-04-07 | ||
| JP2020069429A JP6977098B2 (en) | 2020-04-07 | 2020-04-07 | Exposure device, pattern forming device and exposure method |
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|---|---|---|---|---|
| JP2005092137A (en) * | 2003-09-19 | 2005-04-07 | Nikon Corp | Aligner and exposure method |
| CN102834780A (en) * | 2010-04-08 | 2012-12-19 | 株式会社V技术 | Exposure method and exposure apparatus |
| JP2013130642A (en) * | 2011-12-20 | 2013-07-04 | Nikon Corp | Exposure method, device manufacturing method, and exposure device |
| CN105143985A (en) * | 2013-03-29 | 2015-12-09 | 株式会社阿迪泰克工程 | Lithographic device, lithographic exposure device, recording medium having program recorded thereon, and lithographic process |
| CN110320742A (en) * | 2018-03-30 | 2019-10-11 | 佳能株式会社 | The manufacturing method of lithographic equipment, pattern forming method and article |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH1050601A (en) * | 1996-05-31 | 1998-02-20 | Nikon Corp | Alignment method |
| KR20080087787A (en) * | 2005-12-28 | 2008-10-01 | 가부시키가이샤 니콘 | Exposure system, device manufacturing system, exposure method and device manufacturing method |
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Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005092137A (en) * | 2003-09-19 | 2005-04-07 | Nikon Corp | Aligner and exposure method |
| CN102834780A (en) * | 2010-04-08 | 2012-12-19 | 株式会社V技术 | Exposure method and exposure apparatus |
| JP2013130642A (en) * | 2011-12-20 | 2013-07-04 | Nikon Corp | Exposure method, device manufacturing method, and exposure device |
| CN105143985A (en) * | 2013-03-29 | 2015-12-09 | 株式会社阿迪泰克工程 | Lithographic device, lithographic exposure device, recording medium having program recorded thereon, and lithographic process |
| CN110320742A (en) * | 2018-03-30 | 2019-10-11 | 佳能株式会社 | The manufacturing method of lithographic equipment, pattern forming method and article |
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| JP2021165803A (en) | 2021-10-14 |
| KR20210124907A (en) | 2021-10-15 |
| TWI813941B (en) | 2023-09-01 |
| TW202138931A (en) | 2021-10-16 |
| JP6977098B2 (en) | 2021-12-08 |
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