KR101783076B1 - 노광 방법, 노광 장치 및 물품의 제조 방법 - Google Patents

노광 방법, 노광 장치 및 물품의 제조 방법 Download PDF

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Publication number
KR101783076B1
KR101783076B1 KR1020130142629A KR20130142629A KR101783076B1 KR 101783076 B1 KR101783076 B1 KR 101783076B1 KR 1020130142629 A KR1020130142629 A KR 1020130142629A KR 20130142629 A KR20130142629 A KR 20130142629A KR 101783076 B1 KR101783076 B1 KR 101783076B1
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KR
South Korea
Prior art keywords
substrate
exposure
distribution
scanning
exposure amount
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KR1020130142629A
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English (en)
Korean (ko)
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KR20140071902A (ko
Inventor
히로아키 이타바시
Original Assignee
캐논 가부시끼가이샤
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Publication of KR20140071902A publication Critical patent/KR20140071902A/ko
Application granted granted Critical
Publication of KR101783076B1 publication Critical patent/KR101783076B1/ko

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70358—Scanning exposure, i.e. relative movement of patterned beam and workpiece during imaging
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956—Inspecting patterns on the surface of objects
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70558—Dose control, i.e. achievement of a desired dose
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70625—Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
KR1020130142629A 2012-12-04 2013-11-22 노광 방법, 노광 장치 및 물품의 제조 방법 KR101783076B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2012-265667 2012-12-04
JP2012265667A JP6139870B2 (ja) 2012-12-04 2012-12-04 露光方法、露光装置および物品の製造方法

Publications (2)

Publication Number Publication Date
KR20140071902A KR20140071902A (ko) 2014-06-12
KR101783076B1 true KR101783076B1 (ko) 2017-09-28

Family

ID=51030852

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020130142629A KR101783076B1 (ko) 2012-12-04 2013-11-22 노광 방법, 노광 장치 및 물품의 제조 방법

Country Status (2)

Country Link
JP (1) JP6139870B2 (ja)
KR (1) KR101783076B1 (ja)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102348108B1 (ko) 2015-10-05 2022-01-10 주식회사 미코세라믹스 온도 편차 특성이 개선된 기판 가열 장치
JP7260959B2 (ja) * 2018-03-16 2023-04-19 キヤノン株式会社 リソグラフィ装置、照明装置及び物品の製造方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005116574A (ja) * 2003-10-02 2005-04-28 Advanced Lcd Technologies Development Center Co Ltd 露光方法および装置
JP2006049730A (ja) * 2004-08-06 2006-02-16 Sharp Corp 露光装置、露光量制御方法、露光量制御プログラムとその記録媒体

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3309927B2 (ja) * 1993-03-03 2002-07-29 株式会社ニコン 露光方法、走査型露光装置、及びデバイス製造方法
JP3521543B2 (ja) * 1994-05-18 2004-04-19 株式会社ニコン 走査露光方法及び装置
JPH08313842A (ja) * 1995-05-15 1996-11-29 Nikon Corp 照明光学系および該光学系を備えた露光装置
JPH1012533A (ja) * 1996-06-27 1998-01-16 Nikon Corp 露光方法及び露光装置
JP2000082655A (ja) * 1998-09-04 2000-03-21 Canon Inc スリット機構、露光装置およびデバイス製造方法
JP2000232049A (ja) * 1999-02-09 2000-08-22 Canon Inc 露光装置およびデバイス製造方法
EP2031640A4 (en) * 2006-06-16 2009-06-10 Nikon Corp DEVICE WITH A VARIABLE SLOT, LIGHTING DEVICE, EXPOSURE DEVICE, EXPOSURE METHOD AND METHOD FOR PRODUCING THE DEVICE
US9372413B2 (en) * 2011-04-15 2016-06-21 Asml Netherlands B.V. Optical apparatus for conditioning a radiation beam for use by an object, lithography apparatus and method of manufacturing devices

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005116574A (ja) * 2003-10-02 2005-04-28 Advanced Lcd Technologies Development Center Co Ltd 露光方法および装置
JP2006049730A (ja) * 2004-08-06 2006-02-16 Sharp Corp 露光装置、露光量制御方法、露光量制御プログラムとその記録媒体

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Publication number Publication date
JP2014110408A (ja) 2014-06-12
JP6139870B2 (ja) 2017-05-31
KR20140071902A (ko) 2014-06-12

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