KR101782447B1 - Ｐｚｔ막을 구비한 센서 소자의 제조 방법 - Google Patents

Ｐｚｔ막을 구비한 센서 소자의 제조 방법 Download PDF

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Publication number
KR101782447B1
KR101782447B1 KR1020127026453A KR20127026453A KR101782447B1 KR 101782447 B1 KR101782447 B1 KR 101782447B1 KR 1020127026453 A KR1020127026453 A KR 1020127026453A KR 20127026453 A KR20127026453 A KR 20127026453A KR 101782447 B1 KR101782447 B1 KR 101782447B1
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KR
South Korea
Prior art keywords
soi substrate
pzt film
upper electrode
lower electrode
electrode
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KR1020127026453A
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English (en)
Korean (ko)
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KR20130028720A (ko
Inventor
테츠지 이마무라
마사히데 타무라
타카유키 나카노
히데카즈 야노
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호쿠리쿠 덴키 고교 가부시키가이샤
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Publication of KR20130028720A publication Critical patent/KR20130028720A/ko
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Publication of KR101782447B1 publication Critical patent/KR101782447B1/ko

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/05—Manufacture of multilayered piezoelectric or electrostrictive devices, or parts thereof, e.g. by stacking piezoelectric bodies and electrodes
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01C—MEASURING DISTANCES, LEVELS OR BEARINGS; SURVEYING; NAVIGATION; GYROSCOPIC INSTRUMENTS; PHOTOGRAMMETRY OR VIDEOGRAMMETRY
    • G01C19/00—Gyroscopes; Turn-sensitive devices using vibrating masses; Turn-sensitive devices without moving masses; Measuring angular rate using gyroscopic effects
    • G01C19/56—Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/06—Forming electrodes or interconnections, e.g. leads or terminals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
    • H10N30/074—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing
    • H10N30/076—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing by vapour phase deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/30—Piezoelectric or electrostrictive devices with mechanical input and electrical output, e.g. functioning as generators or sensors
    • H10N30/302—Sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/85—Piezoelectric or electrostrictive active materials
    • H10N30/853—Ceramic compositions
    • H10N30/8548—Lead-based oxides
    • H10N30/8554—Lead-zirconium titanate [PZT] based

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Remote Sensing (AREA)
  • Gyroscopes (AREA)
KR1020127026453A 2010-03-12 2011-03-09 Ｐｚｔ막을 구비한 센서 소자의 제조 방법 KR101782447B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPJP-P-2010-055926 2010-03-12
JP2010055926 2010-03-12
PCT/JP2011/055470 WO2011111732A1 (ja) 2010-03-12 2011-03-09 Ｐｚｔ膜を備えたセンサ素子の製造方法

Publications (2)

Publication Number Publication Date
KR20130028720A KR20130028720A (ko) 2013-03-19
KR101782447B1 true KR101782447B1 (ko) 2017-09-28

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ID=44563532

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020127026453A KR101782447B1 (ko) 2010-03-12 2011-03-09 Ｐｚｔ막을 구비한 센서 소자의 제조 방법

Country Status (4)

Country Link
JP (1) JP5100915B2 (ja)
KR (1) KR101782447B1 (ja)
CN (2) CN102792477B (ja)
WO (1) WO2011111732A1 (ja)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101452169B1 (ko) * 2013-08-02 2014-10-31 주식회사 피비텍 하드디스크용 박막형 피제티 센서 제조방법
JP6217260B2 (ja) * 2013-09-09 2017-10-25 富士通セミコンダクター株式会社 半導体装置、及び半導体装置の製造方法
GB2568196B (en) * 2016-09-09 2022-04-20 Hokuriku Elect Ind Capacitive gas sensor
CN107425112B (zh) * 2017-06-28 2020-05-15 中国科学院苏州生物医学工程技术研究所 薄膜声波传感器及其制作方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005295250A (ja) 2004-03-31 2005-10-20 Toshiba Corp 薄膜圧電共振器及びその製造方法
JP2009177736A (ja) 2008-01-28 2009-08-06 Murata Mfg Co Ltd 電子部品の製造方法
JP2009252786A (ja) 2008-04-01 2009-10-29 Seiko Epson Corp 酸化物原料溶液、酸化物膜、圧電素子、酸化物膜の形成方法および圧電素子の製造方法
JP2009252790A (ja) 2008-04-01 2009-10-29 Seiko Epson Corp 圧電材料および圧電素子

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005295250A (ja) 2004-03-31 2005-10-20 Toshiba Corp 薄膜圧電共振器及びその製造方法
JP2009177736A (ja) 2008-01-28 2009-08-06 Murata Mfg Co Ltd 電子部品の製造方法
JP2009252786A (ja) 2008-04-01 2009-10-29 Seiko Epson Corp 酸化物原料溶液、酸化物膜、圧電素子、酸化物膜の形成方法および圧電素子の製造方法
JP2009252790A (ja) 2008-04-01 2009-10-29 Seiko Epson Corp 圧電材料および圧電素子

Also Published As

Publication number Publication date
JP5100915B2 (ja) 2012-12-19
JPWO2011111732A1 (ja) 2013-06-27
CN104752602B (zh) 2017-07-28
CN102792477A (zh) 2012-11-21
WO2011111732A1 (ja) 2011-09-15
KR20130028720A (ko) 2013-03-19
CN104752602A (zh) 2015-07-01
CN102792477B (zh) 2015-05-27

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