KR101782447B1 - Ｐｚｔ막을 구비한 센서 소자의 제조 방법 - Google Patents

Ｐｚｔ막을 구비한 센서 소자의 제조 방법 Download PDF

Info

Publication number
KR101782447B1
KR101782447B1 KR1020127026453A KR20127026453A KR101782447B1 KR 101782447 B1 KR101782447 B1 KR 101782447B1 KR 1020127026453 A KR1020127026453 A KR 1020127026453A KR 20127026453 A KR20127026453 A KR 20127026453A KR 101782447 B1 KR101782447 B1 KR 101782447B1
Authority
KR
South Korea
Prior art keywords
soi substrate
pzt film
upper electrode
lower electrode
electrode
Prior art date
Application number
KR1020127026453A
Other languages
English (en)
Korean (ko)
Other versions
KR20130028720A (ko
Inventor
테츠지 이마무라
마사히데 타무라
타카유키 나카노
히데카즈 야노
Original Assignee
호쿠리쿠 덴키 고교 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 호쿠리쿠 덴키 고교 가부시키가이샤 filed Critical 호쿠리쿠 덴키 고교 가부시키가이샤
Publication of KR20130028720A publication Critical patent/KR20130028720A/ko
Application granted granted Critical
Publication of KR101782447B1 publication Critical patent/KR101782447B1/ko

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/05—Manufacture of multilayered piezoelectric or electrostrictive devices, or parts thereof, e.g. by stacking piezoelectric bodies and electrodes
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01C—MEASURING DISTANCES, LEVELS OR BEARINGS; SURVEYING; NAVIGATION; GYROSCOPIC INSTRUMENTS; PHOTOGRAMMETRY OR VIDEOGRAMMETRY
    • G01C19/00—Gyroscopes; Turn-sensitive devices using vibrating masses; Turn-sensitive devices without moving masses; Measuring angular rate using gyroscopic effects
    • G01C19/56—Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/06—Forming electrodes or interconnections, e.g. leads or terminals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
    • H10N30/074—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing
    • H10N30/076—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing by vapour phase deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/30—Piezoelectric or electrostrictive devices with mechanical input and electrical output, e.g. functioning as generators or sensors
    • H10N30/302—Sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/85—Piezoelectric or electrostrictive active materials
    • H10N30/853—Ceramic compositions
    • H10N30/8548—Lead-based oxides
    • H10N30/8554—Lead-zirconium titanate [PZT] based

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Remote Sensing (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Gyroscopes (AREA)
KR1020127026453A 2010-03-12 2011-03-09 Ｐｚｔ막을 구비한 센서 소자의 제조 방법 KR101782447B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPJP-P-2010-055926 2010-03-12
JP2010055926 2010-03-12
PCT/JP2011/055470 WO2011111732A1 (ja) 2010-03-12 2011-03-09 Ｐｚｔ膜を備えたセンサ素子の製造方法

Publications (2)

Publication Number Publication Date
KR20130028720A KR20130028720A (ko) 2013-03-19
KR101782447B1 true KR101782447B1 (ko) 2017-09-28

Family

ID=44563532

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020127026453A KR101782447B1 (ko) 2010-03-12 2011-03-09 Ｐｚｔ막을 구비한 센서 소자의 제조 방법

Country Status (4)

Country Link
JP (1) JP5100915B2 (ja)
KR (1) KR101782447B1 (ja)
CN (2) CN102792477B (ja)
WO (1) WO2011111732A1 (ja)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101452169B1 (ko) * 2013-08-02 2014-10-31 주식회사 피비텍 하드디스크용 박막형 피제티 센서 제조방법
JP6217260B2 (ja) * 2013-09-09 2017-10-25 富士通セミコンダクター株式会社 半導体装置、及び半導体装置の製造方法
GB2568196B (en) * 2016-09-09 2022-04-20 Hokuriku Elect Ind Capacitive gas sensor
CN107425112B (zh) * 2017-06-28 2020-05-15 中国科学院苏州生物医学工程技术研究所 薄膜声波传感器及其制作方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005295250A (ja) 2004-03-31 2005-10-20 Toshiba Corp 薄膜圧電共振器及びその製造方法
JP2009177736A (ja) 2008-01-28 2009-08-06 Murata Mfg Co Ltd 電子部品の製造方法
JP2009252790A (ja) 2008-04-01 2009-10-29 Seiko Epson Corp 圧電材料および圧電素子
JP2009252786A (ja) 2008-04-01 2009-10-29 Seiko Epson Corp 酸化物原料溶液、酸化物膜、圧電素子、酸化物膜の形成方法および圧電素子の製造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005295250A (ja) 2004-03-31 2005-10-20 Toshiba Corp 薄膜圧電共振器及びその製造方法
JP2009177736A (ja) 2008-01-28 2009-08-06 Murata Mfg Co Ltd 電子部品の製造方法
JP2009252790A (ja) 2008-04-01 2009-10-29 Seiko Epson Corp 圧電材料および圧電素子
JP2009252786A (ja) 2008-04-01 2009-10-29 Seiko Epson Corp 酸化物原料溶液、酸化物膜、圧電素子、酸化物膜の形成方法および圧電素子の製造方法

Also Published As

Publication number Publication date
JP5100915B2 (ja) 2012-12-19
WO2011111732A1 (ja) 2011-09-15
KR20130028720A (ko) 2013-03-19
CN102792477A (zh) 2012-11-21
CN104752602B (zh) 2017-07-28
CN102792477B (zh) 2015-05-27
JPWO2011111732A1 (ja) 2013-06-27
CN104752602A (zh) 2015-07-01

Similar Documents

Publication Publication Date Title
EP2952853B1 (en) Angular velocity sensor and manufacturing method therefor
WO2011132636A1 (ja) 強誘電体デバイス
KR101782447B1 (ko) Ｐｚｔ막을 구비한 센서 소자의 제조 방법
KR20060096373A (ko) 압전 소자 및 그 제조 방법
US11631800B2 (en) Piezoelectric MEMS devices and methods of forming thereof
JP2008205888A (ja) 圧電振動片の製造方法及び圧電振動素子
JP5277696B2 (ja) 圧電デバイスの製造方法
JP2008227211A (ja) 圧電装置の製造方法及び圧電装置
JP2010247295A (ja) 圧電ｍｅｍｓ素子及びその製造方法
US10707405B2 (en) Electromechanical actuator
JP5453791B2 (ja) 圧電体素子及びその製造方法、並びに該圧電体素子を用いた角速度センサ
JP5903667B2 (ja) 慣性力センサ
JP2003166998A (ja) 半導体加速度センサ
Salowitz Integration and deployment of thick film piezoelectric actuators/sensors on organic stretchable substrates
US9231182B2 (en) Angular velocity sensor
US20190064509A1 (en) Variable focus mirror and optical scanning device
WO2015111416A1 (ja) 加速度センサ
JPH11132873A (ja) 圧電検出器及びその製造方法
US9404938B2 (en) Acceleration sensor
WO2012063818A1 (ja) センサ素子及びセンサ素子の製造方法
WO2015198536A1 (ja) 角速度センサ
JPH09264902A (ja) 加速度センサ及びその製造方法
WO2015072083A1 (ja) センサ素子とその製造方法
JP2009264899A (ja) Ｍｅｍｓ製造方法およびｍｅｍｓ
CN111033200A (zh) 扭矩检测器及扭矩检测器的制造方法

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
E701 Decision to grant or registration of patent right
GRNT Written decision to grant