KR101779267B1 - 다결정 실리콘 잉곳, 다결정 실리콘 잉곳을 제조하는 방법, 및 도가니 - Google Patents
다결정 실리콘 잉곳, 다결정 실리콘 잉곳을 제조하는 방법, 및 도가니 Download PDFInfo
- Publication number
- KR101779267B1 KR101779267B1 KR1020157011114A KR20157011114A KR101779267B1 KR 101779267 B1 KR101779267 B1 KR 101779267B1 KR 1020157011114 A KR1020157011114 A KR 1020157011114A KR 20157011114 A KR20157011114 A KR 20157011114A KR 101779267 B1 KR101779267 B1 KR 101779267B1
- Authority
- KR
- South Korea
- Prior art keywords
- silicon
- crucible
- coating
- polycrystalline silicon
- feedstock
- Prior art date
Links
- 229910021420 polycrystalline silicon Inorganic materials 0.000 title claims abstract description 81
- 238000004519 manufacturing process Methods 0.000 title abstract description 14
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 91
- 239000010703 silicon Substances 0.000 claims abstract description 86
- 239000013078 crystal Substances 0.000 claims abstract description 85
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 85
- 238000000576 coating method Methods 0.000 claims abstract description 79
- 239000011248 coating agent Substances 0.000 claims abstract description 75
- 238000000034 method Methods 0.000 claims abstract description 30
- 230000006911 nucleation Effects 0.000 claims abstract description 28
- 238000010899 nucleation Methods 0.000 claims abstract description 28
- 238000009826 distribution Methods 0.000 claims abstract description 17
- 239000013618 particulate matter Substances 0.000 claims abstract description 15
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 61
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 50
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 50
- 235000012239 silicon dioxide Nutrition 0.000 claims description 31
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 28
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 28
- 239000002245 particle Substances 0.000 claims description 27
- 239000000377 silicon dioxide Substances 0.000 claims description 26
- 238000002425 crystallisation Methods 0.000 claims description 6
- 230000008025 crystallization Effects 0.000 claims description 6
- 239000011236 particulate material Substances 0.000 claims description 6
- 239000011863 silicon-based powder Substances 0.000 claims description 5
- 238000005266 casting Methods 0.000 claims description 4
- 230000008018 melting Effects 0.000 claims description 3
- 238000002844 melting Methods 0.000 claims description 3
- 238000006243 chemical reaction Methods 0.000 abstract description 18
- 230000015572 biosynthetic process Effects 0.000 abstract description 9
- 239000010410 layer Substances 0.000 description 15
- 239000007787 solid Substances 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 239000010453 quartz Substances 0.000 description 5
- 239000007788 liquid Substances 0.000 description 4
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 229910002091 carbon monoxide Inorganic materials 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 239000004576 sand Substances 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 238000007711 solidification Methods 0.000 description 2
- 230000008023 solidification Effects 0.000 description 2
- 239000011230 binding agent Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000015271 coagulation Effects 0.000 description 1
- 238000005345 coagulation Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 125000005842 heteroatom Chemical group 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/002—Crucibles or containers for supporting the melt
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/14—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method characterised by the seed, e.g. its crystallographic orientation
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B28/00—Production of homogeneous polycrystalline material with defined structure
- C30B28/04—Production of homogeneous polycrystalline material with defined structure from liquids
- C30B28/06—Production of homogeneous polycrystalline material with defined structure from liquids by normal freezing or freezing under temperature gradient
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
- H01L31/182—Special manufacturing methods for polycrystalline Si, e.g. Si ribbon, poly Si ingots, thin films of polycrystalline Si
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Silicon Compounds (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/CN2012/082709 WO2014056157A1 (zh) | 2012-10-10 | 2012-10-10 | 多晶硅锭及其制造方法、坩埚 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20150060962A KR20150060962A (ko) | 2015-06-03 |
| KR101779267B1 true KR101779267B1 (ko) | 2017-09-18 |
Family
ID=50476869
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020157011114A KR101779267B1 (ko) | 2012-10-10 | 2012-10-10 | 다결정 실리콘 잉곳, 다결정 실리콘 잉곳을 제조하는 방법, 및 도가니 |
Country Status (3)
| Country | Link |
|---|---|
| KR (1) | KR101779267B1 (zh) |
| CN (1) | CN104703914B (zh) |
| WO (1) | WO2014056157A1 (zh) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104562192B (zh) * | 2015-01-30 | 2017-05-03 | 扬州荣德新能源科技有限公司 | 一种多晶硅锭的铸造方法 |
| DE102015216734A1 (de) * | 2015-09-02 | 2017-03-02 | Alzchem Ag | Tiegel zur Herstellung von Silicium-Ingots, Verfahren zu dessen Herstellung sowie Silicium-Ingot |
| JP6586388B2 (ja) * | 2016-04-08 | 2019-10-02 | クアーズテック株式会社 | 石英ガラスルツボ及びその製造方法 |
| CN108342774B (zh) * | 2018-01-17 | 2020-07-24 | 晶科能源有限公司 | 多晶硅引晶涂层的制备方法及铸锭坩埚 |
| CN108179466A (zh) * | 2018-02-24 | 2018-06-19 | 常熟华融太阳能新型材料有限公司 | 一种多晶铸锭用坩埚及装置 |
| CN108560048B (zh) * | 2018-06-12 | 2020-10-27 | 山东大海新能源发展有限公司 | 多晶硅全熔铸锭用坩埚及其制备方法和应用 |
| CN109913929B (zh) * | 2019-04-29 | 2021-03-23 | 常州大学 | 一种铸锭坩埚贴膜及其制备方法 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011201737A (ja) | 2010-03-26 | 2011-10-13 | Mitsubishi Materials Corp | 多結晶シリコンインゴットの製造方法及び多結晶シリコンインゴット |
| WO2012102343A1 (ja) * | 2011-01-26 | 2012-08-02 | 国立大学法人山口大学 | シリコン融液接触部材、その製法、および結晶シリコンの製造方法 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2505695A3 (en) * | 2007-07-20 | 2013-01-09 | AMG Idealcast Solar Corporation | Methods for manufacturing cast silicon from seed crystals |
| CN201372205Y (zh) * | 2008-12-11 | 2009-12-30 | 浙江昱辉阳光能源有限公司 | 一种多晶硅料提纯设备 |
| CN101508590B (zh) * | 2009-03-20 | 2012-07-04 | 江西赛维Ldk太阳能高科技有限公司 | 一种多晶硅铸锭用坩埚涂层以及制备方法 |
| WO2011120598A1 (en) * | 2010-03-30 | 2011-10-06 | Rec Wafer Norway As | Method for production of semiconductor grade silicon ingots, reusable crucibles and method for manufacturing them |
-
2012
- 2012-10-10 WO PCT/CN2012/082709 patent/WO2014056157A1/zh active Application Filing
- 2012-10-10 CN CN201280076314.9A patent/CN104703914B/zh not_active Expired - Fee Related
- 2012-10-10 KR KR1020157011114A patent/KR101779267B1/ko active IP Right Grant
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011201737A (ja) | 2010-03-26 | 2011-10-13 | Mitsubishi Materials Corp | 多結晶シリコンインゴットの製造方法及び多結晶シリコンインゴット |
| WO2012102343A1 (ja) * | 2011-01-26 | 2012-08-02 | 国立大学法人山口大学 | シリコン融液接触部材、その製法、および結晶シリコンの製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| CN104703914A (zh) | 2015-06-10 |
| WO2014056157A1 (zh) | 2014-04-17 |
| KR20150060962A (ko) | 2015-06-03 |
| CN104703914B (zh) | 2017-09-08 |
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| GRNT | Written decision to grant |