CN104703914A - 多晶硅锭及其制造方法、坩埚 - Google Patents

多晶硅锭及其制造方法、坩埚 Download PDF

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Publication number
CN104703914A
CN104703914A CN201280076314.9A CN201280076314A CN104703914A CN 104703914 A CN104703914 A CN 104703914A CN 201280076314 A CN201280076314 A CN 201280076314A CN 104703914 A CN104703914 A CN 104703914A
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China
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crucible
silicon
coating
silicon nitride
crystal
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CN201280076314.9A
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CN104703914B (zh
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郑志东
王朋
翟蕊
李娟�
范立伟
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Zhejiang Yuhui Solar Energy Source Co ltd
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Zhejiang Yuhui Solar Energy Source Co ltd
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/002—Crucibles or containers for supporting the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/14—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method characterised by the seed, e.g. its crystallographic orientation
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B28/00—Production of homogeneous polycrystalline material with defined structure
    • C30B28/04—Production of homogeneous polycrystalline material with defined structure from liquids
    • C30B28/06—Production of homogeneous polycrystalline material with defined structure from liquids by normal freezing or freezing under temperature gradient

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Silicon Compounds (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)

Abstract

本发明公开了一种多晶硅锭及其制造方法、坩埚，其中该坩埚底面粗糙，且具有空间分布的多个三维几何形状；该坩埚内表面涂覆有至少一层涂层，所述坩埚底面涂层中具有作为硅的异质形核点的颗粒状物质。本发明实施例的坩埚底面涂覆至少一层涂层，涂层中的颗粒状物质可以在后续长晶过程中作为硅的形核点，抑制其它区域晶核的形成，使晶粒的分布更均匀，并且，首先形核的晶粒在坩埚底面的凹坑处即开始进行竞争，一定晶向的晶粒在竞争过程中占有优势，并最终被保留，从而使晶核的取向趋于一致，即采用该方法生长的多晶硅锭中的晶粒大小均匀，晶粒取向较为一致，并降低了晶体内部的位错密度，提高了少子寿命，从而提高了多晶硅太阳能电池的转换效率。

Description

PCT国内申请，说明书已公开。

Claims (1)

  1. PCT国内申请，权利要求书已公开。
CN201280076314.9A 2012-10-10 2012-10-10 多晶硅锭及其制造方法、坩埚 Expired - Fee Related CN104703914B (zh)

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PCT/CN2012/082709 WO2014056157A1 (zh) 2012-10-10 2012-10-10 多晶硅锭及其制造方法、坩埚

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KR (1) KR101779267B1 (zh)
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108560048A (zh) * 2018-06-12 2018-09-21 山东大海新能源发展有限公司 多晶硅全熔铸锭用坩埚及其制备方法和应用

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104562192B (zh) * 2015-01-30 2017-05-03 扬州荣德新能源科技有限公司 一种多晶硅锭的铸造方法
DE102015216734A1 (de) * 2015-09-02 2017-03-02 Alzchem Ag Tiegel zur Herstellung von Silicium-Ingots, Verfahren zu dessen Herstellung sowie Silicium-Ingot
JP6586388B2 (ja) * 2016-04-08 2019-10-02 クアーズテック株式会社 石英ガラスルツボ及びその製造方法
CN108342774B (zh) * 2018-01-17 2020-07-24 晶科能源有限公司 多晶硅引晶涂层的制备方法及铸锭坩埚
CN108179466A (zh) * 2018-02-24 2018-06-19 常熟华融太阳能新型材料有限公司 一种多晶铸锭用坩埚及装置
CN109913929B (zh) * 2019-04-29 2021-03-23 常州大学 一种铸锭坩埚贴膜及其制备方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101508590A (zh) * 2009-03-20 2009-08-19 江西赛维Ldk太阳能高科技有限公司 一种多晶硅铸锭用坩埚涂层以及制备方法
CN201372205Y (zh) * 2008-12-11 2009-12-30 浙江昱辉阳光能源有限公司 一种多晶硅料提纯设备
CN101796226A (zh) * 2007-07-20 2010-08-04 Bp北美公司 由籽晶制造铸造硅的方法
WO2011120598A1 (en) * 2010-03-30 2011-10-06 Rec Wafer Norway As Method for production of semiconductor grade silicon ingots, reusable crucibles and method for manufacturing them
WO2012102343A1 (ja) * 2011-01-26 2012-08-02 国立大学法人山口大学 シリコン融液接触部材、その製法、および結晶シリコンの製造方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5676900B2 (ja) 2010-03-26 2015-02-25 三菱マテリアル株式会社 多結晶シリコンインゴットの製造方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101796226A (zh) * 2007-07-20 2010-08-04 Bp北美公司 由籽晶制造铸造硅的方法
CN201372205Y (zh) * 2008-12-11 2009-12-30 浙江昱辉阳光能源有限公司 一种多晶硅料提纯设备
CN101508590A (zh) * 2009-03-20 2009-08-19 江西赛维Ldk太阳能高科技有限公司 一种多晶硅铸锭用坩埚涂层以及制备方法
WO2011120598A1 (en) * 2010-03-30 2011-10-06 Rec Wafer Norway As Method for production of semiconductor grade silicon ingots, reusable crucibles and method for manufacturing them
WO2012102343A1 (ja) * 2011-01-26 2012-08-02 国立大学法人山口大学 シリコン融液接触部材、その製法、および結晶シリコンの製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108560048A (zh) * 2018-06-12 2018-09-21 山东大海新能源发展有限公司 多晶硅全熔铸锭用坩埚及其制备方法和应用

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KR20150060962A (ko) 2015-06-03
KR101779267B1 (ko) 2017-09-18
WO2014056157A1 (zh) 2014-04-17
CN104703914B (zh) 2017-09-08

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